Development of gel polymer electrolytes for application in quantum dot-sensitized solar cells

A methylcellulose–polysulfide gel polymer electrolyte has been prepared for application in quantum dot-sensitized solar cells (QDSSCs) having the configuration FTO/TiO₂/CdS/ZnS/SiO₂/electrolyte/Pt(cathode). The electrolyte with the composition of 30.66 wt.% methylcellulose, 67.44 wt.% Na₂S, and 1.90 wt.% sulfur exhibits the highest conductivity of 0.183 S cm^?1 with the lowest activation energy of 6.14 kJ mol^?1. CdS quantum dot sensitizers have been deposited on TiO₂ film via the successive ionic layer absorption and reaction (SILAR) method. The QDSSC fabricated using the highest conducting electrolyte and CdS QD prepared with five SILAR cycles exhibits a power conversion efficiency (PCE) of 0.78%. After deposition of zinc sulfide (ZnS) and silicon dioxide SiO₂ passivation layers, the PCE of the QDSSC with photoanode arrangement of TiO₂/CdS(5)/ZnS(2)/SiO₂ increased to 1.42%, an improvement in performance by 82%.     

Ab Initio Simulation of Charge Transfer at the Semiconductor Quantum Dot/TiO2 Interface in Quantum Dot‐Sensitized Solar Cells

Quantum dot‐sensitized solar cells (QDSSCs) have emerged as a promising solar architecture for next‐generation solar cells. The QDSSCs exhibit a remarkably fast electron transfer from the quantum dot (QD) donor to the TiO₂ acceptor with size quantization properties of QDs that allows for the modulation of band energies to control photoresponse and photoconversion efficiency of solar cells. To understand the mechanisms that underpin this rapid charge transfer, the electronic properties of CdSe and PbSe QDs with different sizes on the TiO₂ substrate are simulated using a rigorous ab initio density functional method. This method capitalizes on localized orbital basis set, which is computationally less intensive. Quite intriguingly, a remarkable set of electron bridging states between QDs and TiO₂ occurring via the strong bonding between the conduction bands of QDs and TiO₂ is revealed. Such bridging states account for the fast adiabatic charge transfer from the QD donor to the TiO₂ acceptor, and may be a general feature for strongly coupled donor/acceptor systems. All the QDs/TiO₂ systems exhibit type II band alignments, with conduction band offsets that increase with the decrease in QD size. This facilitates the charge transfer from QDs donors to TiO₂ acceptors and explains the dependence of the increased charge transfer rate with the decreased QD size.     

Amplification of Solar Energy Conversion in Quantum‐Confined CdSe‐Sensitized TiO2 Photonic Crystals by Trapping Light

Photonic effects amplifying solar energy conversion are reported in titania inverse opals sensitized with quantum‐confined CdSe films. TiO₂ inverse opals (i‐TiO₂‐o) and unstructured nanocrystalline TiO₂ (nc‐TiO₂) films are sensitized with CdSe deposited via successive ionic layer adsorption and reaction (SILAR) by generating Se^2? in situ under inert atmosphere, and the film absorbance is tuned by the number of SILAR cycles. Photonic effects are investigated while varying the i‐TiO₂‐o stop band position relative to CdSe films’ absorbance. i‐TiO₂‐o films with stop band at 700 and 560 nm are sensitized with CdSe having absorption edges at 600 and 650 nm thus tuning absorbance to the red and the blue of the stop band. Significant amplification in photon‐to‐current conversion efficiency is measured when CdSe films prepared via two cycles are adsorbed on i‐TiO₂‐o with a stop band at 700 nm, with a maximum average enhancement factor equal to 6.7 ± 1.6 at 640 nm, 60 nm to the blue of the stop band center, relative to nc‐TiO₂ sensitized with comparable CdSe amounts. The gain is observed over a wide frequency range to the blue of the stop band and is greatest when film absorbance was low. The photocurrent gain is not a result of differences in the rates of charge separation or charge transport, and occurs in the same frequency range where absorbance amplification is measured to the blue of the 700‐i‐TiO₂‐o stop band, and is thus attributed to slow light effects enhancing absorbance in the photonic crystal environment.     

CdSe/CdS/ZnS 量子点体系中的超快载流子动力学

利用飞秒泵浦探测技术对CdSe/CdS/ZnS量子点体系中的超快载流子动力学过程进行了研究. 通过选择不同波长的泵浦光分别激发样品壳层和核层,研究了载流子在壳层和核层中的超快动力学过程. 实验结果表明,载流子在CdS壳层导带中弛豫过程非常迅速(约130 fs),时间明显短于载流子在CdSe核层导带中的弛豫时间(约400 fs). 实验中也发现在CdS壳层和CdSe核层的分界面存在一定量的缺陷态.     

Two-step annealed CdS/CdSe co-sensitizers for quantum dot-sensitized solar cells

CdS/CdSe co-sensitizers on TiO₂ films were annealed using a two-step procedure; high temperature (300 °C) annealing of TiO₂/CdS quantum dots (QDs), followed by low temperature (150 °C) annealing after the deposition of CdSe QDs on the TiO₂/CdS. For comparison, two types of films were prepared; CdS/CdSe-assembled TiO₂ films conventionally annealed at a single temperature (150 or 300 °C) and non-annealed films. The 300 °C-annealed TiO₂/CdS/CdSe showed severe coalescence of CdSe QDs, leading to the blocked pores and hindered ion transport. The QD-sensitized solar cell (QD-SSC) with the 150 °C-annealed TiO₂/CdS/CdSe exhibited better overall energy conversion efficiency than that with the non-annealed TiO₂/CdS/CdSe because the CdSe QDs annealed at a suitable temperature (150 °C) provided better light absorption over long wavelengths without the hindered ion transport. The QD-SSC using the two-step annealed TiO₂/CdS/CdSe increased the cell efficiency further, compared to the QD-SSC with the 150 °C-annealed TiO₂/CdS/CdSe. This is because the 300 °C-annealed, highly crystalline CdS in the two-step annealed TiO₂/CdS/CdSe improved electron transport through CdS, leading to a significantly hindered recombination rate.     

Specific features of luminescence quenching in a nematic liquid crystal doped with nanoparticles

The change in the intensity of the photoluminescence (PL) spectra of nematic liquid crystal (NLC) composites as a function of the concentration of CdSe/ZnS semiconductor quantum dots (QDs) and TiO₂ and ZrO₂ nanoparticles ~5 nm in diameter has been investigated. It is shown that the PL-quenching intensity in composites with CdSe/ZnS QDs exceeds that in composites with TiO₂ and ZrO₂ nanoparticles. The lowfrequency spectra of these composites with a concentration of 0.1 wt %, recorded in the range of 10²–10³ Hz, and the content of mobile ions in them have been investigated. It is found that the dielectric loss in the composite with CdSe/ZnS QDs is much higher and the content of mobile ions is larger by a factor of 3 than in the composites with TiO₂ and ZrO₂ nanoparticles. It is shown that an increase in the CdSe/ZnS QD concentration in NLC composites leads to an increase in the dielectric loss and a decrease in the PL intensity. Possible mechanisms of the interaction between NLC molecules and CdSe/ZnS QDs are discussed.     

ZnS overlayer on in situ chemical bath deposited CdS quantum dot-assembled TiO2 films for quantum dot-sensitized solar cells

ZnS overlayers were deposited on the CdS quantum dot (QD)-assembled TiO₂ films, where the CdS QDs were grown on the TiO₂ by repeated cycles of the in situ chemical bath deposition (CBD). With increasing the CdS CBD cycles, the CdS QD-assembled TiO₂ films were transformed from the TiO₂ film partially covered by small CdS QDs (Type I) to that fully covered by large CdS QDs (Type II). The ZnS overlayers significantly improved the overall energy conversion efficiency of both Types I and II. The ZnS overlayers can act as the intermediate layer and energy barrier at the interfaces. However, the dominant effects of the ZnS overlayers were different for the Types I and II. For Type I, ZnS overlayer dominantly acted as the intermediate layer between the exposed TiO₂ surface and the electrolyte, leading to the suppressed recombination rate for the TiO₂/electrolyte and the significantly enhanced charge-collection efficiency. On the contrary, for Type II, it dominantly acted as the efficient energy barrier at the interface between the CdS QDs and the electrolyte, leading to the hindered recombination rate from the large CdS QDs to the electrolyte and thus enhanced electron injection efficiency.     

Investigation of polymer/inorganic hybrid photovoltaic device using quantum dots as the interface modifier

CdS quantum dots (QDs) were introduced as an interface modifier in the poly(3-hexylthiophene) (P3HT)/TiO₂ nanorod arrays hybrid photovoltaic device. The presence of CdS QDs interlayer was found to provide enhanced light absorption, increased interfacial recombination resistance at the P3HT/TiO₂ interfaces, thus leading to a lower recombination rate of the electrons due to the stepwise structure of band edge in P3HT/CdS/TiO₂, which accounts for the observed enhanced photocurrent and photovoltage of the hybrid solar cells. The optimized performance was achieved in P3HT/CdS/TiO₂ hybrid solar cells after deposition of CdS QDs for 10 cycles, with a power conversion efficiency of 0.57 %, which is nearly ten times higher than that of P3HT/TiO₂. The findings indicate that inorganic semiconductor quantum dots provide effective means to improve the performance of polymer/TiO₂ hybrid solar cells.     

N掺杂锐钛矿TiO2电子结构的第一性原理研究

为了研究N掺杂对锐钛矿型TiO₂电子结构的影响，进而揭示N掺杂导致锐钛矿型TiO₂的禁带宽度变小的机理，对N掺杂TiO₂进行了基于密度泛函理论的第一性原理研究. 通过对能带、态密度及电子分布密度图的分析，发现在N掺杂后，N原子与Ti原子在导带区，发生了强烈的相互关联作用，致使Ti原子3d轨道上的电子向N原子2p轨道发生移动，使得导带降低了，从而使得TiO₂导带的禁带宽度变小.理论预测可以发生红移现象，与实验结果对比分析，理论与实验基本相符. 关键词： N掺杂 2')" href="#">锐钛矿型TiO₂ 电子结构     

单核/双壳结构CdSe/CdS/ZnS纳米晶的合成与发光性质

以巯基乙酸为稳定剂,在水溶液中合成了单核/双壳结构的CdSe/CdS/ZnS纳米晶。在内核CdSe和外壳ZnS之间的内壳CdS作为晶格匹配调节层,能够很好的改善核/壳界面处的性能,而且,最外层ZnS能够最大程度地使激子受限。用TEM和XPS对纳米晶进行了表征,并且用光致发光光谱和吸收光谱对不同核壳结构的纳米晶的发光性能进行了比较,结果表明单核/双壳结构的纳米晶具有更加优异的发光特性。     

Effect of ZnS layers on optical properties of prepared CdS/TiO<Subscript>2</Subscript> nanotube arrays for photocatalyst

The TiO₂ nanotube arrays (TiO₂ NTAs) prepared by re-oxidation were chosen as basement. The NTAs prepared through re-oxidation show smoother surface and more uniform tube mouth on large scale compared with the first as-grown one. We use successive ionic layer adsorption and reaction method to deposit quantum dots (ZnS and CdS) onto the sample successively. The findings reveal that two kinds of quantum dots (～10 nm) distribute regularly and the nanotube mouth is open. From the UV–Vis absorption spectrum of samples, the red shift occurs after the sedimentation of the two quantum dots, which proves that the double modification can expand the absorption to 650 nm. Among all specimens, the sample produced by co-deposition has the highest speed of catalytic efficiency of 90.7% compared with bare TiO₂ NTAs (52.9%) and just CdS QDs sensitized sample (65.8%). In the test of photocatalysis durability, the decay percentages of CdS/TiO₂ NTAs and ZnS/CdS/TiO₂ NTAs were 35.8 and 48.4%, respectively, which means that the ZnS passivation layer plays a crucial role in enhancing photocatalytic activities.     

TiO2/CdSe多层膜结构的制备及光电化学性能研究

采用电化学方法在导电的ITO/TiO₂ 薄膜上沉积了棕红色CdSe薄膜, 并制得TiO₂/CdSe多层膜体系,研究了多层膜的微结构和光电化学性能. 实验表明, CdSe薄膜沿着(111)方向择优生长, 多层膜结构的厚度和紫外-可见光吸收强度随着沉积层数的增加而增加. 通过测定多层膜电极的光电化学性能表明, 二层膜体系的开路电压和短路电流密度最大,光电化学性能最好.     

Cocktail effect of Fe2O3 and TiO2 semiconductors for a high performance dye-sensitized solar cell

The bi-semiconductors of TiO₂ and Fe₂O₃ were used as a photoelectrode material in a high performance dye-sensitized solar cell due to cocktail effects from the two conduction bands. The size of the semiconductors was reduced by using a paint shaker to enlarge the contact area of the semiconductor with the dye or electrolyte. The fill factor and the efficiency of the prepared dye-sensitized solar cell were improved by over 16% and 300%, respectively; these parameters were measured from a current-voltage curve that was based on the effects of the Fe₂O₃ co-semiconductor and the size reduction. A mechanism is suggested wherein the conduction band of Fe₂O₃ works to prohibit the trapping effects of electrons in the conduction band of TiO₂. This result is attributed to the prevention of electron recombination between electrons in the TiO₂ conduction band with dye or electrolytes. The mechanism is suggested based on impedance results, which indicate improved electron transport at the interface of the TiO₂/dye/electrolyte.     

Molecular layering of 2D films and superlattices based on II–VI compounds

The method of molecular layering is used to prepare CdS thin films and CdS/ZnS and CdS/CdSe superlattices. The dependence of the exciton photoluminescence on film thickness is studied, and the role of internal strains is examined. The effect of the excitation intensity on the superlattice photoluminescence spectra is examined, manifested in a shift of the emission maximum toward shorter wavelengths when this intensity is increased. Fiz. Tverd. Tela (St. Petersburg) 40, 820–821 (May 1998)     

Application of TiO2 nano-particles on the electrode of dye-sensitized solar cells

In this study, nano-TiO₂ thin film electrode and solar cell have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible absorption spectra, contact angle, X-ray photoelectron spectroscopy (XPS), and current-voltage characteristics analyses. X-ray diffraction patterns show that the best sintering temperature of a nano-TiO₂ film is 600 °C, at which TiO₂ anatase phase forms best and the particle size of 8-10 nm can be obtained. The SEM images of a nano-TiO₂ thin film show that the surface of the film is smooth and porous, and the thickness of the nano-TiO₂ film is 4 μm. The measurements of contact angle between nano-TiO₂ film and deionized water (DI water) reveal that the nano-TiO₂ film is super-hydrophilic when solarized under ultraviolet. The electrode of dye-sensitized solar cell is used as a free-base porphyrin with carboxyl group, 5,10,15,20-tetrakis (4-carboxyphenyl) porphyrin (TCPP) as the sensitizer to adsorb onto the TiO₂ thin film. From the results of ultraviolet-visible absorption spectra and XPS analyses of the electrode, the effects of nano-TiO₂ particles’ addition to the electrode of dye-sensitized solar cell can improve the absorption of visible light (400-700 nm) and increase electrons transferred from TCPP to the conduction band of TiO₂, resulting in the enhancement of efficiency for dye-sensitized solar cells.     

Enhanced cyclability of CdS/TiO2 photocatalyst by stable interface structure

CdS nanoparticles were in situ deposited on TiO₂ nanosheets and nanorods under hydrothermal conditions, respectively. The effect of CdS–TiO₂ interface structure on hydrogen production activity was mainly investigated under visible light irradiation. The results showed that the TiO₂ nanosheet-based CdS/TiO₂ showed a higher activity and a higher cyclability than the nanorod-based sample due to the stronger interaction of CdS with the (0 0 1) facets of TiO₂ than with the (1 0 1) facets. It was proposed that the strong interaction between CdS nanoparticles and TiO₂ nanosheets effectively refrains the recombination of electrons and holes.     

连续离子层吸附反应沉积后硫化法制备柔性铜锌锡硫薄膜太阳电池

在柔性钼箔衬底上采用连续离子层吸附反应法(successive ionic layer absorption and reaction)制备ZnS/Cu2SnSx叠层结构的预制层薄膜,预制层薄膜在蒸发硫气氛、550 C温度条件下进行退火得到Cu2ZnSnS4吸收层.分别采用EDS,XRD,Raman,SEM表征吸收层薄膜的成分、物相和表面形貌.结果表明,退火后薄膜结晶质量良好,表面形貌致密.用在普通钠钙玻璃上采用相同工艺制备的CZTS薄膜表征薄膜的光学和电学性能,表明退火后薄膜带隙宽度为1.49 eV,在可见光区光吸收系数大于104cm 1,载流子浓度与电阻率均满足薄膜太阳电池器件对吸收层的要求.用上述柔性衬底上的吸收层制备Mo foil/CZTS/CdS/i-ZnO/ZnO:Al/Ag结构的薄膜太阳电池得到2.42%的效率,是目前报道柔性CZTS太阳电池最高效率.     

Preparation and characterization of ZnS/CdS bi-layer for CdTe solar cell application

In this work, bilayer ZnS/CdS film was prepared as an improved window layer of CdTe solar cell. TEM was used to observe the cross section of the bilayer structure. The total thickness of ZnS/CdS film was about 60 nm, which could allow more photons to pass through it and contribute to the photocurrent. Optical properties of the bilayers were investigated using UV–vis spectroscopy. Compared with poor transmission of standard CdS film in the short wavelength range of 350–550 nm, the transmission of ZnS/CdS was improved and reached above 50%. The ZnS/CdS was annealed with CdCl₂. X-ray photoelectron spectroscopy (XPS) was used to investigate its chemical properties. A possible diffusion between CdS and ZnS was observed after annealing. The efficiency of standard CdS/CdTe solar cell was 9.53%. The device based on ZnS/CdS window layer had a poor 6% efficiency. With annealing treatment on ZnS/CdS layer, the performance was improved and reached 10.3%. In addition, the homogeneity of solar cell performance was improved using ZnS/CdS window layer. A thin ZnS layer was quite effective to reduce the possible shunt paths and short parts of window layer and consequently contributed to fabrication of a homogeneous CdTe solar cell.     

ZnO/TiO2 core–shell heterojunction for CdS and PbS quantum dot-cosensitized solar cells

ZnO nanorods (NRs) with regular morphology were prepared through hydrothermal method, and the TiO₂ shell was assembled onto the surface of ZnO NRs by spin coating to the ZnO/TiO₂ core–shell heterojunction. CdS and PbS quantum dots (QDs) were used to cosensitize the ZnO/TiO₂ nanostructure by direct adsorption (DA) and successive ionic layer adsorption and reaction, respectively. SEM, TEM, and HRTEM images show that the samples possessed a rough surface and four lattice fringes indicating the successful synthesis of the ZnO/TiO₂/CdS/PbS composite structure. The ZnO/TiO₂(10T)/CdS/PbS sample showed a high absorption intensity at a broad range of wavelength to visible light region. The ZnO/TiO₂(10T)/CdS/PbS photoelectrode with QDSSCs showed the highest IPCE of 36.04% and photoelectric efficiency (η) of 1.59%; these values increased by approximately 550% and 150% compared with those of unsensitized ZnO (0.29%) and ZnO/TiO₂(10T) (1.04%) and about 146% and 120% compared with those of ZnO/TiO₂(10T)/CdS and ZnO/TiO₂(10T)/PbS, respectively. The fill factor was 0.36, and the photocurrent density (J_sc) and open circuit voltage (V_oc) reached the maximum values of 9.73 mA cm⁻² and 0.46 V, respectively.     

Atomistic tight-binding computations of the structural and optical properties of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals

A study of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals is carried out using atomistic tight-binding theory and the configuration interaction method to provide information for applications in bioimaging, biolabeling, display devices and near-infrared electronic instruments. The calculations yield the dependences of the internal and external passivated shells on the natural behaviours of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals. The reduction of the optical band gaps is observed with increasing numbers of monolayers in the external ZnS shell due to quantum confinement. Interestingly, the optical band gaps of CdTe/CdS/ZnS core/shell/shell nanocrystals are greater than those of CdTe/CdSe/ZnS core/shell/shell nanocrystals. In the presence of an external ZnS-coated shell, electron–hole wave function overlaps, oscillation strengths, ground-state exchange energies and Stokes shift are improved, whereas ground-state coulomb energies and fine-structure splitting are reduced. The oscillation strengths, Stokes shift and fine-structure splitting are reduced with the increase in external ZnS shell thickness. The oscillation strengths, Stokes shift and fine-structure splitting of CdTe/CdS/ZnS core/shell/shell nanocrystals are larger than those of CdTe/CdSe/ZnS core/shell/shell nanocrystals. Reduction of the atomistic electron–hole interactions is observed with increasing external ZnS shell size. The strong electron–hole interactions are more probed in CdTe/CdS/ZnS core/shell/shell nanocrystals than in CdTe/CdSe/ZnS core/shell/shell nanocrystals.