Catalytic properties of aluminum/nickel-, copper-containing oxide film compositions

The possibility of the single-step formation of nickel- and copper-containing thin-film oxide systems on aluminum by plasma electrolytic oxidation was demonstrated. The resulting structures were found to be active in the reaction of CO oxidation to CO₂ in the temperature region 300–500°C. However, the resulting structures exhibited stable catalytic activity only in the simultaneous presence of nickel and copper compounds. The films were studied using X-ray diffraction, X-ray spectroscopic analysis, X-ray photoelectron spectroscopy, and electron microscopy. The resulting films exhibited an essentially inhomogeneous composition through the thickness. Electrolyte elements such as nickel, copper, sodium, and phosphorus were concentrated at the surface. Nickel occurred as Ni²⁺, and copper occurred as Cu⁺ and Cu²⁺. The surface contained carbon in detectable amounts.     

Study on the Superhydrophilicity of the SiO2-TiO2 Thin Films Prepared by Sol-Gel Method at Room Temperature

Nanoscale SiO₂-TiO₂ composite thin films with the thickness of about 100 nm were prepared by sol-gel method at room temperature in air. The chemical states of the elements on the surface and near the surface were measured by XPS. The results showed that the Ti on/near the surface of the thin films existed not only as TiO₂ but also as Ti₂O₃. Part of the TiO₂ was changed to Ti₂O₃ after UV irradiation. The crystalline structure of the TiO₂ in the SiO₂-TiO₂ thin films was anatase with the crystallite size of 14–20 nm. It was found that the thin film prepared at room temperature in air has good superhydrophilic property and has strong adherence to the substrate.     

Preparation and properties of SiO2-TiO2 thin films from silicic acid and titanium tetrachloride

The preparation of SiO₂-TiO₂ thin films by the sol-gel method using silicic acid and titanium tetrachloride as starting materials was studied. The homogeneous sols were obtained by the condensation reaction of silicic acid with titanium tetrachloride in methanol-tetrahydrofuran. The dipcoating of slide glasses and silicon wafers followed by heat treatment gave oxide thin films of 88–93% transmittance, 3000–4500 Å thickness, and 1.45–1.80 refractive index, depending on heat-treatment temperature and TiO₂ content. FT-IR measurement showed that the Si-O-Ti bond is formed even in the sol and films. The variations of film thickness and refractive index on transformation from the gels into the oxides were found to be quite low.     

Mesoporous and nanocrystalline sol–gel derived NiTiO3 at the low temperature: Controlling the structure,size and surface area by Ni:Ti molar ratio

Nanocrystalline nickel titanate (NiTiO₃) thin films and powders with mesoporous structure were produced at the low temperature of 500 °C by a straightforward particulate sol–gel route. The sols were prepared in various Ni:Ti molar ratios. X-ray diffraction and Fourier transform infrared spectroscopy revealed that the powders contained mixtures of the NiTiO₃ and NiO phases, as well as the anatase-TiO₂ and the rutile-TiO₂ depending on the annealing temperature and Ni:Ti molar ratio. Moreover, it was found that Ni:Ti molar ratio influences the preferable orientation growth of the nickel titanate, being on (202) planes for the nickel dominant powders (Ni:Ti ≥ 75:25) and on (104) planes for the rest of the powders (Ni:Ti: ≤ 50:50). The average crystallite size of the powders annealed at 500 °C was in the range 1.5–2.4 nm and a gradual increase occurred up to 8 nm by heat treatment at 800 °C. The activation energy of crystal growth decreased with an increase of Ni:Ti molar ratio, calculated in the range 24.93–37.17 kJ/mol. Field emission scanning electron microscope analysis revealed that the deposited thin films had mesoporous and nanocrystalline structure with the average grain size of 20–35 nm. Moreover, atomic force microscope images presented that the thin films had a hill-valley like morphology with roughness mean square in the range 41–57 nm. Based on Brunauer–Emmett–Taylor analysis, the synthesized powders showed mesoporous structure containing pores with needle and plate like shapes. The mesoporous structure of the powders was stable at high annealing temperatures and one of the highest surface areas (i.e., 156 m²/g) reported in the literature was obtained for the powder containing Ni:Ti = 50:50 at 500 °C.     

纳米铜薄膜氧化反应动力学规律研究

研究了140 ℃下纳米尺度Cu薄膜的氧化行为. 采用真空蒸发法以不同沉积速率制备一系列Cu薄膜, 利用原子力显微镜(AFM)观察其微观形貌, 选取形貌良好的Cu薄膜样品. 采用方块电阻和透射光谱两种方法为表征手段, 测量16～22 nm范围内不同厚度Cu薄膜在140 ℃下完全氧化所需要的时间, 得到了Cu薄膜氧化反应的动力学曲线, 并利用X射线衍射(XRD)分析了氧化产物的晶相结构和成分. 结果表明, 纳米尺度下Cu薄膜在140 ℃下氧化反应的动力学表征结果满足特殊的反对数生长规律, 反应产物为Cu₂O.     

Electrochemical and surface analytical study of the formation of oxide films on monel-400 and copper in alkaline media

The nature of the oxide films formed on monel-400 and copper in presence of NaOH and N-methylpyrrolidine (a volatile amine) at pH 9.5 and in 0.1 M KNO₃ medium were investigated. The oxide films were grown by applying an anodic potential of +0.4 V (vs saturated calomel electrode) for 30 min. The compositions of the surface oxide films were analysed by X-ray photoelectron spectroscopy. In the case of copper in NaOH medium, Cu(0) and a very small amount of copper hydroxide were observed. However, in amine medium, Cu(0) and Cu-amine complex were found. For monel in NaOH, the anodic film was found to contain hydroxides of both copper and nickel. After sputtering, this film showed a small amount of metal oxide below the hydroxide layer as confirmed by the oxygen peak. In amine medium the anodic film was found to contain only nickel hydroxide and metallic copper. The depth profile analysis of films showed that the film developed was very thin and the nickel hydroxide was sputtered very easily from the film. Received: 27 May 1997 / Accepted: 8 September 1997     

Atomic Layer Deposited Ti2O3 Thin Films

Ti₂O₃ thin films have been prepared through atomic layer deposition and subjected to electrical resistivity measurements as a function of temperature. The as-prepared films were stable for up to three weeks. In Ti₂O₃ thin films, the insulator-metal transition is observed at ∼80 K, with nearly 3–4 orders of magnitude change in resistivity. The anomalous increase in electrical resistivity in the films is in accordance with the two-band model. However, the energy interval between the bands depending on the crystallographic c/a ratio leads to a change in electrical resistivity as a function of temperature.     

Kinetic laws of thermal transformations in nickel nanofilms

Transformations in nickel nanofilms as a function of thickness (d = 3–60 nm) and temperature of heat treatment (T = 373–873 K) are studied via optical spectroscopy, microscopy, and gravimetry. It is found that, depending on the thickness of nickel films and temperature of heat treatment, the kinetic curves of the degree of transformation are satisfactorily described in terms of the linear, inverse logarithmic, cubic, and logarithmic laws. The contact potential difference for Ni and NiO films and the photovoltage for Ni-NiO systems are measured. An energy band diagram for Ni-NiO systems is constructed. A model of the thermal transformation of Ni films, including the stages of oxygen adsorption, charge carrier redistribution in a Ni-NiO contact field, and the formation of nickel(II) oxide, is proposed.     

Influence of bath temperatures on the wettability of copper films surface prepared by electroless plating method on beech wood

Copper films were coated on beech wood substrates by electroless plating method. The influence of bath temperature on the copper films properties was studied by varying the bath temperatures 25, 35, 45 and 55 °C. Scanning electron microscopy (SEM) equipped with energy dispersive spectroscopy (EDS), X‐ray diffraction (XRD) pattern, X‐ray photoelectron spectroscopy (XPS), micro Raman spectroscopy and contact angle measurements were used to both characterize the physical and chemical copper films properties and understand the influence of bath temperature on the wettability of copper surface. In our studies, we have found that the gained copper mass significantly increased at 55 °C. The crystalline nature of the coated copper was confirmed by XRD. The presence of Cu₂O and CuO was observed by XPS and micro Raman techniques, which confirms the oxidization of the coated copper surface. Also these characterization techniques have shown the big influence of bath temperature on the morphology, grain size, chemical composition and the film thickness of the coated copper. The wettability was highly influenced by increasing CuO on the coated copper, which is increased by the bath temperature. The contact angle measurements have demonstrated the influence of C―O, O―C?O and CuO components of the surface on the wettability of the samples. Copyright © 2016 John Wiley & Sons, Ltd.     

Synthesis, morphology and specific magnetization of the electrodeposited Zn-Ni-P thin films on copper substrate from non-cyanide electrolyte

Thin films of Zn-Ni-P on a copper substrate were synthesized by electrodeposition from chloride baths. It was found that the diffraction reflections of the crystal structure of Zn-Ni-P thin layers occur at thicknesses d ≥ 5 µm. The X-ray diffraction studies results confirm the formation in the Zn-Ni-P films of ZnNi₁₀P₃ compound. The morphology of the obtained films was analyzed by Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS). The films are continuous and have a typical topography with many homogeneous globular features. EDS confirmed the formation of Zn-Ni-P coating only in 2 samples with Zn:Ni:P atomic ratios of 1:8:4 and 4:8:3, respectively. X-ray Photoelectron Spectroscopy (XPS) revealed the chemistry and the thickness of the studied thin films. At room temperature and thickness d ≥ 5 µm the investigated thin layers exhibit high values of the specific magnetizations in the range (25–37) A m² kg^?1, leading to the potential use in devices, appliances and electronics. The Curie temperature values of the synthesized Zn-Ni-P films were determined. It was found that by heating Zn-Ni-P thin layers of thicknesses d ≥ 5 µm up to a temperature T=900 K an interaction was detected with the copper substrate leading to a lower specific magnetization.      

Deposition of copper‐doped iron sulfide (CuxFe1−xS) thin films using aerosol‐assisted chemical vapor deposition technique

Copper‐doped iron sulfide (Cu_xFe_1?xS, x = 0.010–0.180) thin films were deposited using a single‐source precursor, Cu(LH)₂Cl₂ (LH = monoacetylferrocene thiosemicarbazone), by aerosol‐assisted chemical vapor deposition technique. The Cu‐doped FeS thin films were deposited at different substrate temperatures, i.e. 250, 300, 350, 400 and 450 °C. The deposited thin films were characterized by X‐ray diffraction (XRD) patterns, Raman spectra, scanning electron microscopy, energy dispersive X‐ray analysis (EDX) and atomic force microscopy. XRD studies of Cu‐doped FeS thin films at all the temperatures revealed formation of single‐phase FeS structure. With increasing substrate temperature from 250 to 450 °C, there was change in morphology from wafer‐like to cylindrical plate‐like. EDX analysis showed that the doping percentage of copper increased as the substrate temperature increased from 250 to 450 °C. Raman data supports the doping of copper in FeS films. Copyright © 2010 John Wiley & Sons, Ltd.     

Correlation between structural and optical properties of TiO<Subscript>2</Subscript>:ZnO thin films prepared by sol–gel method

We have studied structural and optical properties of thin films of TiO₂, doped with 5% ZnO and deposited on glass substrate (by the sol–gel method). Dip-coated thin films have been examined at different annealing temperatures (350–450 °C) and for various layer thicknesses (89–289 nm). Refractive index, porosity and energy band gap were calculated from the measured transmittance spectrum. The values of the index of refraction are in the range of 1.97–2.44, the porosity is in the range of 0.07–0.46 and the energy band gap is in the range of 3.32–3.43. The coefficient of transmission varies from 50 to 90%. In the case of the powder of TiO₂, doped with 5% ZnO, and aged for 3 months in ambient temperature, we have noticed the formation of the anatase phase (tetragonal structure with 20.23 nm grains). However, the undoped TiO₂ exhibits an amorphous phase. After heat treatments of thin films, titanium oxide starts to crystallize at the annealing temperature 350 °C. The obtained structures are anatase and brookite. The calculated grain size, depending on the annealing temperature and the layer thickness, is in the range of 8.61–29.48 nm.     

Structure and dielectric properties of HfO<Subscript>2</Subscript> films prepared by a sol–gel route

Mono- and multilayer HfO₂ sol–gel thin films have been deposited on silicon wafers by dip-coating technique using a solution based on hafnium ethoxide as precursor. The densification/crystallization process was achieved by classical annealing between 400 and 600 °C for 0.5 h (after drying at 100 °C). Systematic TEM studies were performed to observe the evolution of the thin film structure depending on the annealing temperature. The overall density of the films was determined from RBS spectrometry correlated with cross section (XTEM) thickness measurements. After annealing at 450 °C the films are amorphous with a nanoporous structure showing also some incipient crystallization. After annealing at 550 °C the films are totally crystallized. The HfO₂ grains grow in colonies having the same crystalline orientation with respect to the film plane, including faceted nanopores. During annealing a nanometric SiO₂ layer is formed at the interface with the silicon substrate; the thickness of this layer increases with the annealing temperature. Capacitive measurements allowed determining the value of the dielectric constant as 25 for four layer films, i.e. very close to the value for the bulk material.     

CuInS2：两步电沉积制备及性能

采用恒电位沉积法制备铜铟合金预制膜,并存管式炉中通过固态源蒸发硫化预制膜得到CuInS:薄膜.通过扫描电镜(SEM)、能量色散谱仪(EDS)和X射线衍射仪(XRD)对CuInS2薄膜的表而形貌、截面厚度、成分组成和薄膜的组织结构进行了研究,并利用紫外可见光吸收谱仪(UV-Vis)研究了不同硫化温度对CuInS:薄膜的形貌及其光学吸收性质的影响.结果表明:不同的退火温度能够影响CuInS:薄膜的表面形貌以及带隙的大小,从而影响其光学吸收特性.     

Effect of swift heavy ion irradiation on the physical properties of CuIn(S0.4Se0.6)2 alloy thin films prepared by solution growth technique

Alloy thin films of CuIn(S_0.4Se_0.6)₂ material were deposited using the solution growth technique. The various deposition parameters such as pH of solution, time, concentration of ions and temperature have been optimized for the device grade thin films. The as-deposited films were annealed in a rapid thermal annealing (RTA) system at 450 °C in air for 5 min and subjected to high-energy Ag ion irradiations. Ag ion irradiation has been performed with an energy of 100 MeV at a fluency of 5×10¹² ions/cm² on the thin film. The changes in optical and electrical properties that occurred before and after post-deposition treatments in CuIn(S_0.4Se_0.6)₂ thin films were studied using X-ray diffraction (XRD) and AFM; increase in crystallinity was observed after annealing and irradiation. In addition, structural damages were observed in irradiated thin films. After annealing and irradiation, the surface roughness was seen to be increased. Decrease in resistivity was observed, which is consistent with the optical energy band gap. The results are explained by considering the high energy deposited due to the electronic energy loss upon irradiation, which modified the properties of the material.     

Bioactivity and mechanical properties of nickel‐incorporated hydrogenated carbon nanocomposite thin films

In this paper, the influence of nickel incorporation on the mechanical properties and the in vitro bioactivity of hydrogenated carbon thin films were investigated in detail. Amorphous hydrogenated carbon (a‐C:H) and nickel‐incorporated hydrogenated carbon (Ni/a‐C:H) thin films were deposited onto the Si substrates by using reactive biased target ion beam deposition technique. The films' chemical composition, surface roughness, microstructure and mechanical properties were investigated by using XPS, AFM, TEM, nanoindentation and nanoscratch test, respectively. XPS results have shown that the film surface is mainly composed of nickel, nickel oxide and nickel hydroxide, whereas at the core is nickel carbide (Ni₃C) only. The presence of Ni₃C has increased the sp² carbon content and as a result, the mechanical hardness of the film was decreased. However, Ni/a‐C:H films shows very low friction coefficient with higher scratch‐resistance behavior than that of pure a‐C:H film. In addition, in vitro bioactivity study has confirmed that it is possible to grow dense bone‐like apatite layer on Ni/a‐C:H films. Thus, the results have indicated the suitability of the films for bone‐related implant coating applications. Copyright © 2011 John Wiley & Sons, Ltd.     

Microstructure and electrical properties of BaTiO<Subscript>3</Subscript> and (Ba,Sr)TiO<Subscript>3</Subscript> ferroelectric thin films on nickel electrodes

Nickel thin films have been sputtered on standard Si/SiO₂ substrates with TiO₂ as an adhesive layer. The thermal stability of these substrates was analyzed. SEM images show an increase in grain size with annealing temperature. They were found to be stable till 800°C, beyond which the nickel layer disintegrated. These substrates were used for deposition of BaTiO₃ and (Ba,Sr)TiO₃ dielectric thin films under a reducing atmosphere. The dielectric thin films were processed with various pyrolysis and annealing temperatures in order to optimize the dielectric properties. Increased pyrolysis temperatures showed an increase in the grain size. Results on these nickelised substrates were finally compared with dielectric films deposited on platinized silicon substrates under identical conditions but crystallized in an oxygen atmosphere.     

Effects of deposition temperature and annealing temperature on the morphology and electrochemical capacitance of Ni(OH)2 thin films

In this paper, we report 3D nickel (II) hydroxide thin films with porous nanostructures prepared on Ni foam by direct current electrodeposition from aqueous solution of Ni(NO₃)₂ through basic chemicals. The effect of deposition temperature on Ni(OH)₂ thin film morphology is examined by field emission scanning electron microscopy, which is found to have significant influence on capacitance performance of Ni(OH)₂ thin films. Moreover, the effect of annealing temperature on electrochemical capacitance and long-time stability of Ni(OH)₂ thin films is investigated. An optimum-specific capacitance value of 2,447?farads?g^?1 is obtained for Ni(OH)₂ thin film deposited at 20?°C and annealed at 100?°C.     

The passivity of nickel in phosphate solutions: Part I. Effect of temperature

The effect of temperature on the passivity of nickel in 0.1 M Na₂HPO₄ solution was studied by combined electrochemical-ellipsometric techniques. The optical constants for the passive films were found to be slightly dependent on temperature over the range 25–90°C. At all temperatures, the passive film forms instantaneously and does not grow during the 1 h experimental period. However, the thickness of the film is potential and temperature-dependent. The principal effect of temperature is to modify the thickness of the passive film formed on nickel in phosphate solution.     

Study of the properties of in situ Pt-doped SnO2 thin films prepared by metal-organic chemical vapour deposition

Pt-SnO₂ thin films were directly deposited by MOCVD in the temperature range 320–440°C using the reactive gas mixture SnEt4/O₂/Pt(hfa)₂ (hfa being bis(1,1,1,5,5,5-hexafluoroacetylacetonato). The Pt content of the films increases by increasing either the Pt(hfa)₂ mole fraction or the growth temperature. Platinum is uniformly incorporated through the thickness of the films although a small excess was found on the surface. In as-deposited films, Pt is in the metallic form on the surface whereas it is mainly in the form of PtO in the bulk of the layers. Pt doping decreases the resistivity by more than an order of magnitude and improves the thermal stability of the films. The detection sensitivity to ethanol in dry air of in situ Pt-doped SnO₂ is significantly enhanced compared to undoped layers. Another beneficial effect of Pt doping is the lowering of the optimum detection temperature of ethanol.