剪切应变量对Al-3%Mg多晶材料性能的影响

本文采用内角为105°、外角为45°的模具对多晶Al-3;Mg材料进行了等径角挤压实验,研究了等径角挤压的剪切应变量对其力学性能的影响.结果表明:等径角挤压可以显著改善多晶Al-3;Mg材料的力学性能,而且剪切应变量的大小与材料的力学性能密切相关.经过等径角挤压,Al-3;Mg合金的抗拉强度和硬度得到显著提高,其中抗拉强度提高146.8;,硬度提高104.7;,而等径角挤压一次后,Al-3;Mg合金延伸率由5.85;下降至4.59;,此后材料的延伸率得到改善.     

2A12铝块体超细晶材料的ECAP制备

本文采用自行制造的内角为90°、外角为30°模具对工业用2A12铝合金材料进行了ECAP实验,并采用HitachiS-800透射电镜(TEM)观察和分析了挤压前后材料的微观结构.结果表明:在室温下采用90°模具、加工路径Bc,以5mm/s速度,挤压八次后,成功制备了晶粒尺寸约为200nm、具有大角度晶界的2A12铝块体超细晶材料.     

An interesting inclusion phenomenon with (S)-1-(hydroxydiphenylmethyl)-5-azoniaspiro[4.4]nonane bromide and (S)-1-(hydroxydiphenylmethyl)-5-azoniaspiro[4.5]decane bromide and optical resolution of binaphthyl and biphenanthyl diols by inclusion crystallization with these optically active ammonium salts

Recrystallization of the spiro-pyrrolidinium salts (S)-1-(hydroxydiphenyl methyl)-5-azoniaspiro[4.4]nonane bromide or (S)-1-(hydroxydiphenylmethyl)-5-azoniaspiro[4.5] decane bromide from chloroform afforded a crystalline spiro-pyrrolidinium salt including two molecules of chloroform which was determined by 'H nmr elemental analysis, and X-ray analysis. Racemic 2.2-dihydroxy-1, 1-binaphthyl and 10, 10-dihydroxy-9,9-biphenanthryl have been resolved effectively by inclusion crystallization using these chiral ammonium salts.     

Molecular structure and 1H, 13C NMR assignments of 1,3,5-tris(imidazol-1-ylmethyl)-2,4,6-trimethylbenzene

The molecule 1,3,5-tris(imidazol-1-ylmethyl)-2,4,6-trimethylbenzene (titmb) crystallizes as a monohydrate in the monoclinic space group C2/c with a = 20.888(4), b = 13.220(2), c = 14.385(2) Å, = 90.36(1)°. Two of three imidazole groups are on one side of the central benzene ring, and the other one is on the opposite side. The crystal packing of titmb is stabilized by O-H--N hydrogen bonding between the water molecule and nitrogen atoms of the imidazole group. The complete ¹H and ¹³C NMR assignments for titmb were carried out by 2D NMR spectral measurements.     

Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy

The low solubility of Er in GaAs results in the formation of ErAs nanostructures when GaAs is grown with 5–6 at% Er/Ga ratio by molecular beam epitaxy on GaAs surfaces. For growth on the (4 1 1)A GaAs surface, cross-sectional scanning transmission electron microscopy images show the presence of ErAs nanorods embedded in a GaAs matrix extending along the [2 1 1] direction with a spacing of roughly 7 nm and a diameter of roughly 2 nm. Growth on the GaAs (4 1 1)B surface resulted in only nanoparticle formation. Variation of the polarized optical absorption with in-plane polarization angle is consistent with coupling to surface plasmon resonances of the semimetallic nanostructures.