Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology

Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabrication processes of such 3D devices are complex,especially in the interconnection of electrodes.In this paper,we present a novel method which combines suspended electrodes and focused ion beam(FIB)technology to greatly simplify the electrodes interconnection in 3D devices.Based on this method,we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al₂O₃ gate-oxide both grown by atomic layer deposition.Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires,which avoid cumbersome steps in the traditional 3D structure fabrication technology.Both single pillar and arrays devices show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 106 and a low threshold voltage around 0 V.The ON-current of the 2×2 pillars vertical channel transistor was 1.2μA at the gate voltage of 3 V and drain voltage of 2 V,which can be also improved by increasing the number of pillars.Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption.     

Self-assembled film thickness determination by focused ion beam

The thickness evolution of multilayer film is investigated by focused ion beam (FIB) in the domain of polymer multilayers. This method, currently used in the modification and the characterization of integrated circuits, proves it is possible to determine the polymer film thickness. Sample cutting and its observation of the cross-section are performed in the FIB without leaving the vacuum chamber. Two main conclusions can be drawn: (1) the roughness of the film increases with the number of layer deposit, (2) the film growth changes from nonlinear (called exponential) to linear beyond 300 nm (70 layers).     

Investigation of physical properties of quartz after focused ion beam bombardment

Optical properties (transmission and refractive index) and phase change (from amorphous to crystal) of a commonly used glass, quartz, were investigated before and after focused ion beam (FIB) bombardment with ion energy from 30 to 50 keV. We found different influences of FIB bombardment on the optical properties and chemical structure of the quartz in the wavelength region of visible and near infrared, respectively. The quartz still can be used in the infrared wavelength for conventional optical applications. As an application example, an array of diffractive optical elements (DOEs) was directly fabricated on the quartz by the FIB milling. The measured diffraction efficiency of the DOEs is 83.5%, which is acceptable for practical use.This revised version was published online in March 2005. In the previous version, the published online date was missing     

Potential for size reduction of AlGaAs optical channel waveguide structures fabricated by focused ion beam implantation and oxidation

Optical channel waveguides formed by focused ion beam (FIB) implantation-induced mixing of AlGaAs multiple quantum well structures and subsequent oxidation of the mixed regions have the potential of significantly reducing the size of integrated photonic waveguide structures. Since FIB implantation is a direct write process characterized by nanoscale precision, we suggest its use for forming channel waveguides having nanoscale (submicrometer) widths. Calculations presented for such channel waveguides show reductions in size by at least an order of magnitude are possible for directional couplers and other structures involving curved channel waveguide sections. Such size reductions would allow the realization of significantly higher levels of device integration than are now currently possible.     

Depth control of a silicon structure fabricated by 100q keV Ar ion beam lithography

Ion beam lithography of a silicon surface using an Ar ion beam with an ion energy in the order of hundreds of keV is demonstrated in this study. A specially designed ion irradiation facility was employed that enabled generation and irradiation with a highly accelerated and highly charged Ar ion beam. An ion-beam-induced amorphous layer on a silicon substrate can be selectively etched in hydrofluoric acid, whereas, a non-irradiated area is scarcely etched and, consequently, a concave structure can be fabricated on the irradiated area. To control the depth of the structure, parameters for dependence of the depth on ion irradiation were investigated. As a result, the depth of irradiated area can be controlled by the ion energy that is adjusted by the acceleration voltage and the ion charge. In addition, the etch resistance of the irradiated area increases with an increase in ion energy due to the crystalline layer formed on the surface. Simulation results reveal that the depth is strongly related to the defect distribution induced by ion irradiation. These results indicate the potential use of this method for novel three-dimensional lithography.     

准晶结构的激光全息人工制作

报道了用激光全息刻写技术结合感光聚合材料体系制作介观尺度二维准周期结构(准晶). 并在前期工作的基础上，研究了不同曝光量对二维空气柱孔径的影响，不同偏振对准晶结构花样的影响. 实验结果显示，可以制作的二维准晶的空气柱孔径可达100nm，而且结构均匀，无缺陷面积大. 用此实验系统可以制作多种花样二维甚至是三维准晶结构. 目前，除激光全息刻写技术外，用其他传统精密机械加工技术来人工制作介观准晶体尚存在很大挑战性. 关键词： 准晶结构 光子晶体 激光全息技术     

Nanoscale effects in focused ion beam processing

Focused ion beams with diameters of 8 to 50 nm are used for material processing in the nanoscale regime. In this paper, effects of the ion beam–solid interaction determining the formation of small structures by ion-beam sputtering and chemically assisted material deposition and etching are investigated. In the case of decreasing feature size, angle-dependent sputtering, a non-constant sputter rate, and scattered ions play an important role. The impact on side-wall angle, aspect ratio, and shape of the bottom of the etched structures is discussed. In beam tail regions, these effects will be especially pronounced, leading to material swelling instead of material removal. Ion beam assisted etching and deposition will face additional effects. For small structures, gas depletion becomes a significant drawback. The impact on gas depletion and the competition with sputtering are discussed. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-9131/761360, E-mail: frey@iis-b.fhg.de     

Structure and magnetic properties of Co nanoclusters fabricated by ion beam synthesis in SiO2 films

Co nanoparticles fabricated by ion beam synthesis in SiO₂ films were investigated with transmission electron microscopy and superconducting quantum interference device technique. Variation of the thermal treatment enables the formation of Co nanoclusters of different sizes ranging from 2 to 40 nm. Small nanoclusters of about 2–3 nm are amorphous, whereas clusters above 7 nm show the configuration of cubic Co nanocrystals. Measurements of magnetisation at temperatures between 2 K and 360 K reveal superparamagnetic behaviour for the small nanoclusters up to 3 nm and ferromagnetism for clusters above 7 nm. Received: 12 February 2001 / Accepted: 3 May 2001 / Published online: 27 June 2001     

Josephson junction fabrication by means of ion implantation and electron beam lithography

Josephson junction fabrication techniques by means of ion implantation, electron beam lithography and dry etching process are discussed. Current voltage characteristics, temperature and an applied magnetic field dependence of a maximum zero-voltage current have been measured. Dose dependence of major junction parameters has also been investigated.     

Plasmonic color pixels fabricated by nanoimprint process

Optical Review - Plasmonic nanostructures or metasurfaces have recently been actively researched for structural color generation. Controlling the plasmonic resonant wavelengths of surface plasmon...     

Self-assembly of well-ordered and highly uniform nanoripples induced by focused ion beam

Well-ordered and highly uniform nanoripple structures on the surface of single crystal LaAlO₃ (1 0 0), SrTiO₃ (1 0 0) and Al₂O₃ (0 0 0 1) were formed via self-assembly (not by beam writing) by focused ion-beam bombardment. The morphology and topography of nanoripple structures were characterized using in-situ focused ion-beam/scanning electron microscope, as well as ex-situ atomic force microscopy. Under off-normal bombardment without sample rotation, the characteristic wavelength of nanoripples varying from 248 to 395 nm on the LaAlO₃ (1 0 0) surface can be obtained by changing ion fluence and incident angle. When all sputtering parameters except the ion fluence are constant, the wavelength of nanoripples is increased with the enhanced ion fluence. These results demonstrate the potential application of using ion sputtering method for fabricating the well-ordered and highly uniform nanoripples which can be used in nanodevices.     

Self-assembly of well-ordered and highly uniform nanoripples induced by focused ion beam

Well-ordered and highly uniform nanoripple structures on the surface of single crystal LaAlO₃ (1 0 0), SrTiO₃ (1 0 0) and Al₂O₃ (0 0 0 1) were formed via self-assembly (not by beam writing) by focused ion-beam bombardment. The morphology and topography of nanoripple structures were characterized using in-situ focused ion-beam/scanning electron microscope, as well as ex-situ atomic force microscopy. Under off-normal bombardment without sample rotation, the characteristic wavelength of nanoripples varying from 248 to 395 nm on the LaAlO₃ (1 0 0) surface can be obtained by changing ion fluence and incident angle. When all sputtering parameters except the ion fluence are constant, the wavelength of nanoripples is increased with the enhanced ion fluence. These results demonstrate the potential application of using ion sputtering method for fabricating the well-ordered and highly uniform nanoripples which can be used in nanodevices.     

Polymer photonic band-gaps fabricated by nanoimprint lithography

We report on the fabrication and characterization of photonic band-gaps structures by nanoimprint lithography in a dye-doped polymer. Photonic band calculations show that photonic crystal slabs composed of a triangular array of polymer pillars could exhibit photonic band-gaps for the magnetic-like modes. The resulting structures show that the nanoimprint lithography process is well-suited to fabricate in a single-step process, these challenging photonic structures opening perspectives to realize integrated photonic band-gap circuits.     

Grain size of nanocrystalline YSZ buffer layers fabricated by ion beam deposition

Amorphous or nanocrystalline thin films are capable to be efficient diffusion barrier layers for YBCO coated conductors of ion beam assisted deposition route. Nanocrystalline Yttria-Stabilized Zirconia (YSZ) buffer layers were fabricated by the ion beam deposition. Kr and Ar gases were utilized for the dual Kaufman type sputtering ion sources sequently. Both of the ion beams were fixed at 200 mA, while the ion energy was in the range of 450–2000 eV. The thickness of the YSZ buffer layers was several hundreds of nanometers. The grain size of YSZ thin films, which varied from 2 to 20 nm, was calculated by Scherrer Formulation based on the X-ray diffraction measurement results. The grain size always decreased at first and then increased when the ion energy was increased. In the cases Kr gas was utilized and Ar gas was utilized, the grain size reached its minimum value at the ion energy of about 1800 eV and 1000 eV, respectively. Such phenomenon was discussed using the thermodynamic theory of thin film nucleation. Deposition rate and substrate temperature were the two chief variables of the critical nuclei concentration and grain size.     

Analysis of polished polycrystalline diamond using dual beam focused ion beam microscopy

This paper presents a study on polycrystalline diamond (PCD) polished by dynamic friction polishing (DFP) with the aid of advanced dual beam FIB (focused ion beam) microscopy. After disclosing a variety of wear tracks by DFP using electron imaging in combination with the ion channelling effect, a dual beam FIB was successfully employed at wear track sites to specifically create both the large cross-sectional specimen for microanalysis and thin foil for nanoanalysis. The study concluded that the polished PCD subsurface was free from microscale cracking. However, the attached debris layer on the top surface contained metal oxides and non-diamond carbon phase with inhomogeneous distributions of C, Fe, Cr, Ni, Si and O across the layer. An attached layer directly above a diamond grain was composed of essentially amorphous carbon, suggesting that a direct phase transformation from diamond crystalline to amorphous occurred during DFP.     

光刻及离子束蚀刻技术制作DNA芯片模版

 采用光刻及离子束蚀刻技术制作面阵石英DNA芯片模版，利用扫描电子显微镜（SEM）和表面轮廓仪测试了所制石英DNA芯片模版的表面微结构形貌特征，分析了所制石英DNA芯片模版出现图形畸变的原因。所用工艺为在其它衬底材料表面制作更大规模及具有复杂结构的大面阵DNA芯片模版奠定了基础。     

光刻及离子束蚀刻技术制作DNA芯片模版

采用光刻及离子束蚀刻技术制作面阵石英DNA芯片模版,利用扫描电子显微镜（SEM）和表面轮廓仪测试了所制石英DNA芯片模版的表面微结构形貌特征,分析了所制石英DNA芯片模版出现图形畸变的原因。所用工艺为在其它衬底材料表面制作更大规模及具有复杂结构的大面阵DNA芯片模版奠定了基础。     

Light propagation in two-dimensional photonic crystals illuminated by a tightly focused laser beam

By using a tightly focused laser beam, we have studied light propagation in two-dimensional photonic crystals consisting of closed-packed hexagonal arrays of polystyrene particles with diameter of 1∼5 μm. The light propagation is found to depend strongly on the focal point positioning, the incident beam polarization and the interaction between particles and glass substrates.