A multi-layer phosphor package of white-light-emitting diodes with high efficiency

A new structure of multi-layer phosphor package of white-light-emitting diodes has been proposed. The thickness of phosphor layer plays an important role in improving the efficiency of LED and the calculation has showed that the efficiency of double-layer and triple-layer phosphor package improves a lot and the multi-layer phosphor package also has higher efficiency.     

荧光粉比例对白光LED特性的影响

用黄色和橙色硅酸盐荧光粉制备了白光LED,调整黄粉和橙粉的比例得到不同的色温.对样品进行光学测试,发现黄粉与橙粉的比例小于7时,黄光部分的峰值约590 nm,比例大于7时,黄光部分的峰值约570 nm;显色指数和流明效率都是随色温的增大先上升后下降,5521 K时达到最优值,这是由于低色温时,荧光粉的浓度大导致不能有效...     

荧光粉对大功率LED热特性的影响

为了研究荧光粉发热对大功率LED器件热特性的影响,设计了五种不同荧光粉涂敷方式的大功率LED器件,利用ANSYS软件建立热力学模型进行仿真。将模拟与实测结果进行比较,结果表明,铝基板底部的实测温度、透镜顶部的实测温度、芯片的计算结温与加荧光粉热载荷的模拟温度更相近,不加荧光粉热载荷条件下的模拟温度要低于加荧光粉热载荷的模拟温度和实测温度,并且荧光粉涂敷的量以及涂敷的方式对芯片结温、铝基板底部温度、透镜顶部温度都有影响。     

白光LED远程荧光粉技术研究进展与展望

远程荧光粉技术通过将荧光粉与芯片分离,降低了荧光粉的工作环境温度,提升了荧光粉的稳定性,改善了白光LED的照明品质和光效,同时有望降低LED眩晕度,提供大面积平板光源,在未来照明与显示应用中具有重要意义。远程荧光粉技术的白光LED将向多功能化、高性能化和智能化方向发展。本文将综述白光LED远程荧光粉技术的研究进展,主要介绍其封装工艺的优化、评价参数的构建和分析,以及相关荧光材料的发展现状。     

大功率LED筒灯散热封装设计与分析

设计了一种大功率白光LED照明灯具的封装结构,通过有限元计算,分析其稳态工作下的温度场分布,并通过温度测试实验表明,器件上测试点温度76.0℃,散热器外壳温度71.0℃,误差分别为2.6%和2.3%,理论计算与实验结果基本吻合。在此基础上,结合灯具各构件的温度场分布与传热学原理,提出了一种新的散热封装结构,为大功率LED的散热优化方案提供了有效依据。     

A new self-activated yellow-emitting phosphor Zn2V2O7 for white LED

A new self-activated yellow-emitting Zn₂V₂O₇ phosphor was synthesized by high temperature solid-state reaction. X-ray powder diffraction (XRD) analysis confirmed the sample with monoclinic formation of Zn₂V₂O₇. The excitation and emission spectra indicated the phosphor can be efficiently excited by near ultraviolet (NUV) light in 220–400 nm range and exhibit a bright broad yellow emission with the highest emission intensity at 531 nm. The broad emission band from 400 to 650 nm can be attributed to the charge transfer transition in the VO₄ tetrahedra, which suggests that the phosphor is a promising yellow phosphor applied for white light-emitting diodes (WLED).     

一种高效率和高功率的双同轴虚阴极振荡器

 提出了一种双同轴虚阴极振荡器，并对其进行了理论分析和数值模拟。这种振荡器采用了一种新的能量提取结构，将波束相互作用和能量提取分开进行。提取区内轴的左端面可以反射微波，为波束相互作用提供反馈机制；同时还可以吸收在下游漂移的电子，这有利于输出功率和效率的提高。在器件的入口处注入峰值电压为500kV的梯形脉冲时，模拟得到了瞬时峰值功率大于2.5GW，周期平均的峰值功率约1.2GW的微波输出，频率为2.175GHz，能量提取效率达到11％。输出的微波保持了传统同轴虚阴极振荡器的优点，模式纯度高、谱宽非常窄。     

白光LED用LiBaBO3:Eu2+材料发光特性研究

采用高温固相法制备了LiBaBO3:Eu2+绿色发光材料.测量了Eu2+浓度为1 mol%时样品的激发与发射光谱,其发射光谱为双峰宽谱,主峰分别为482和507 nm,与理论计算值符合很好;监测482 nm发射峰时,对应激发光谱的峰值为287和365 nm,监测507 nm发射峰时,对应的激发峰为365和405 nm.研究了Eu2+浓度对材料发射光谱的影响,结果显示,随Eu2+浓度的增大,蓝、绿发射峰均发生了红移,当Eu2+浓度大于3 mol%时,蓝色发射峰消失,只有绿色发射峰存在.测量了LiBaBO3:Eu2+材料发光强度随Eu2+浓度的变化情况,结果显示随Eu2+浓度的增大发光强度呈现先增大后减小的趋势,在Eu2+浓度为3 mol%时到达峰值,根据Dexter理论,其浓度猝灭机理为电偶极-偶极相互作用.     

Photoluminescence properties of a new Eu2+-activated CaLaGa3S7 yellowish-green phosphor for white LED applications

A thiogallate chalcogenide phosphor CaLaGa₃S₇:Eu²⁺ was synthesized by a solid-state reaction at 950 °C in a H₂S atmosphere. The photoluminescence excitation,emission spectra, concentration quenching, fluorescence lifetime, and thermal quenching process of the phosphor were investigated in detail. It was found that the synthesized phosphor emitted intense and broadband yellowish-green light with a peak at 554 nm. Thus, the proposed phosphor is suitable for the development of blue or near UV LED. The critical dopant concentration of Eu²⁺ (R_c=15 Å) per unit formula was found to be 0.15 mol. At room temperature, the fluorescence lifetime of Eu²⁺ in CaLaGa₃S₇ was found to be 0.216 μs. The activation energy for thermal quenching was 0.29 eV. The chromaticity coordinates of our phosphor is very close in color to Y₃Al₅O₁₂:Ce³⁺. Therefore, CaLaGa₃S₇:Eu²⁺ can be a good alternative as a yellowish-green phosphor and can be used for white light generation in phosphor-converted LEDs.     

Characteristic enhancement of white LED lamp using low temperature co-fired ceramic-chip on board package

In this paper, we propose low temperature co-fired ceramic-chip on board (LTCC-COB) package with improved thermal characteristics; no insulation layer exists between the LED chip and metal base. In actual measurement as well as in thermal simulation, the proposed LED lamp structure showed excellent thermal properties, compared with surface mound device-printed circuit board (SMD-PCB) package LED lamp. The optical output power, thermal distribution, current-voltage (I-V) and electroluminescence (EL) were measured and compared to analyze the characteristics of LTCC-COB package LED lamp with SMD-PCB package LED lamp. EL peak intensity of LTCC-COB package LED lamp is 1.75 times better than that of SDM-PCB package LED lamp. The thermal resistance between packing area and air was found to be 7.3 K/W and 7.9 K/W for LTCC-COB package and SMD-PCB package respectively. The proposed LTCC-COB packaged LED lamp is not only suitable for high power LED package due to its low thermal resistance but also a promising solution for illumination modules.     

基于不同衬底材料高出光效率LED芯片研究进展

提高LED芯片的出光效率是解决LED光源大功率化和可靠性的根本。根据LED芯片所用衬底材料的不同,总结了近年来提高GaN基LED出光效率的研究进展,介绍了新的设计思路、工艺结构与制备方法。并从材料结构和衬底选取方面,对LED芯片未来的发展趋势进行了展望。     

新型折反式LED高效聚光器件

本文介绍一种折反式ＬＥＤ聚光器件。这种器件可将ＬＥＤ发光管芯向侧面发射的光全反射聚光。同时将向正面发射的光折射聚光,聚光效率较一般的折射聚光ＬＥＤ高２倍以上     

Surface spherical crown arrays structure increases GaN-based LED efficiency

To increase the light extraction efficiency of GaN-based light-emitting diode (LED) with nano-spherical hexagonal arrays, the finite-difference time-domain method was used to optimize the structure parameters such as radius and height of GaN, $\text{ SiO}_{2}$ and ZnO spherical crown. The light extraction efficiency (LEE) of the GaN spherical crown hexagonal arrays with a radius of 473 nm and a height of 250 nm over the LED surface exhibited 5.7 times the enhancement compared with that of the planar LED, and better than the LEE of the same type of structures with other parameters.     

A novel yellow phosphor for white light emitting diodes

This paper reports that a novel yellow phosphor, LiSrBO₃:Eusup>2+, was synthesized by the solid-state reaction. The excitation and emission spectra indicate that this phosphor can be effectively excited by ultraviolet (360 and 400~nm) and blue (425 and 460~nm) light, and exhibits a satisfactory yellow performance (565~nm). The role of concentration of Eusup>2+ on the emission intensity in LiSrBO₃ is studied, and it is found that the critical concentration is 3 mol\%, and the concentration self-quenching mechanism is the dipole--dipole interaction according to the Dexter theory. White light emitting diodes were generated by using an InGaN chip (460~nm or 400~nm) with LiSrBO₃:Eusup>2+ phosphor, the CIE chromaticity is (x=0.341, y=0.321) and (x=0.324, y=0.318), respectively. Therefore, LiSrBO₃:Eusup>2+ is a promising yellow phosphor for white light emitting diodes.     

High efficiency small molecule white organic light-emitting devices with a multilayer structure

In this paper, a new white organic light-emitting device (WOLED) with multilayer structure has been fabricated. The structure of devices is ITO/N, N-bis-(1-naphthyl)-N, N^′-diphenyl-1, 1′-biphenyl-4, 4′-diamine (NPB) (40 nm)/NPB: QAD (1%): DCJTB (1%) (10 nm) /DPVBi (10 nm) /2, 9-dimethyl, 4, 7-diphenyl, 1, 10-phenanthroline (BCP) (d nm)/tris-(8-hydroxyquinoline) aluminium (Alq₃)(50-d nm)/LiF (1 nm)/Al (200 nm). In our devices, a red dye 4-(dicyanomethylene)-2-t-butyl-6 (1, 1, 7, 7-tetramethyl julolidyl-9-enyl)-4H-pyran (DCJTB) and a green dye quinacridone (QAD) were co-doped into NPB. The device with 8 nm BCP shows maximum luminance of 12 852 cd/m² at 20 V. The current efficiency and power efficiency reach 9.37 cd/A at 9 V and 3.60 lm/W at 8 V, respectively. The thickness of the blocking layer permit the tuning of the device spectrum to achieve a balanced white emission with Commission International de’Eclairage (CIE) chromaticity coordinates of (0.33,0.33). The CIE coordinates of device change from (0.3278, 0.3043) at 5 V to (0.3251, 0.2967) at 20 V that are well in the white region, which is largely insensitive to the applied bias.     

A high capacity image steganography using multi-layer embedding

Until today, high-capacity is still one of important research parts in information hiding. After the secret information embedded is extracted, the demand for the image reversibility for the total recovery of the original object without any distortion goes high. This paper proposes a high capacity steganography using multilayer embedding (CRS), which can enhance the performance of information hiding system. The experimental results show the proposed CRS scheme has better performance than others. Moreover, the proposed CRS method can display the advantages of good quality image and low complexity of computation.     

白光LED用Ca7（SiO4）2Cl6∶Eu2+荧光粉的光谱性能研究

通过高温固相法制备了用于紫外激发白光LED的蓝绿色Ca7(SiO4)2Cl6∶Eu2+荧光粉,并对样品进行了XRD分析和发光性能测试。结果表明,合成的样品为单相Ca7(SiO4)2Cl6;在紫外光激发下,样品的发射谱包括418和502nm两个发射峰。分别监测这两个发射峰,得到了峰值位于290和360nm处的两个宽带激发谱,说明Eu2+离子在基质晶格中可能占有两个不同的格位。研究了Eu2+离子浓度对发光强度的影响,最佳掺杂浓度为0.75mol%。结果表明该荧光粉是一种较好的蓝绿色发光材料。     

白光LED用LiBaBO3:Eu2+材料发光特性研究

采用高温固相法制备了LiBaBO₃:Eu²⁺绿色发光材料.测量了Eu²⁺浓度为1mol%时样品的激发与发射光谱,其发射光谱为双峰宽谱,主峰分别为482和507nm,与理论计算值符合很好;监测482nm发射峰时,对应激发光谱的峰值为287和365nm,监测507nm发射峰时,对应的激发峰为365和405nm.研究了Eu²⁺浓度对材料发射光谱的影响,结果显示,随Eu²⁺浓度的增大,蓝、绿发射峰均发生了     

Evaluation of new large area PMT with high quantum efficiency

The neutrino detector of the Jiangmen Underground Neutrino Observatory(JUNO) is designed to use20 kilotons of liquid scintillator and approximately 16000 20 inch photomultipliers(PMTs).One of the options is to use the 20 inch R12860 PMT with high quantum efficiency which has recently been developed by Hamamatsu Photonics.The performance of the newly developed PMT preproduction samples is evaluated.The results show that its quantum efficiency is 30%at 400 nm.Its Peak/Valley(P/V) ratio for the single photoelectron is 4.75 and the dark count rate is 27 kHz at the threshold of 3 mV while the gain is at 1 × 10~7.The transit time spread of a single photoelectron is 2.86 ns.Generally the performances of this new 20 inch PMT are improved over the old one of R3600.