Non-volatile memory characteristics of polyimide layers embedded with ZnO nanowires

We fabricated 8 × 8 cross-bar array-type organic non-volatile memory devices of polyimide (PI) layers embedded with ZnO nanowires. The ZnO nanowires were synthesized by chemical vapor deposition and deposited into the PI layers by a solution coating process. The devices of PI layer without ZnO nanowires showed an insulating characteristic without exhibiting any memory behavior. The ZnO nanowires acted as carrier trapping sites in the insulating PI layers for our memory devices. The organic memory devices exhibited write-once-read-many-times-type non-volatile memory characteristics with an excellent ON/OFF switching ratio over 10⁶, good uniformity in cumulative probability, and stability without serious degradation over 10⁴ s.     

Space-time modulation characteristics of optical transducers

A theoretical treatment using linear system's analysis is given for space-time light modulators. The linear approach is based on the assumption that the dynamic image can be adequately represented by the superposition of a number of running waves in time. This theory is used to describe dynamic selection of images on the PRIZ optical transducer.     

Effects of crystallographic orientation on electrooptic spatial light modulator amplitude and phase responses

The effects of crystallographic orientation on output amplitude and signal-dependent phase distortions in electrooptic spatial light modulators such as the PROM and PRIZ are described.     

Write-beam induced crystal damage in the conducting PRIZ

Surface and sub-surface crystal damage of the conducting PRIZ spatial light modulator is reported. The damage, induced by 442 nm write-beam power densities as small as 100 μW/cm², is limited to the surface and the near surface region on the negative electrode side of the device. Surface layer disorder resulting from mechanical surface preparation plays a key role in the damage process. As the surface layer perfection is improved, the density of the induced damage decreases and the threshold increases. The damage threshold level is strongly coupled to the non-uniform electric field in the near surface region of the crystal.     

Comparative effects of polymide and PECVD silicon nitride as passivating layers on GaAs power MESFET characteristics

Two different dielectric materials (polymide and PECVD silicon nitride) have been used in this work as passivation coatings for GaAs power MESFETs. We submitted the devices to accelerated life tests with the purpose of characterizing the behaviour of the insulating layers during the periods of storage. This characterization has been made by measuring the most important electrical (DC and RF) parameters of the devices and controlling their time evolution. The most significant result of the experiments is that the Si₃N₄ passivated devices show a greater stability of their parameters at the end of the two following tests: a storage without bias (HTS) and in operating conditions (HTOT). The third test, performed under reverse gate bias at high temperature (HTRB), did not reveal any noticeable difference between the devices with both types of coatings.     

Optical data storage in LC cells

Liquid crystal devices as a medium for holograms storage have been investigated. Long term memory effects in LC cells have been observed. Experiments proved that certain combination of insulating alignment layers has a major influence on the long term memory effect. Optimal liquid crystal cell construction allows us to achieve sufficient diffraction efficiency to record holographic patterns and to develop a re-writable holographic medium. The configuration of PVK and polyimide layers in LC cell construction with specific LC mixture was tested. The method of permanent and re-writable recording of optical data (holographic pattern) onto LC cells was achieved. However, the method of erasing recorded data was realized but mechanisms of this phenomenon are not clearly understood yet.     

Nanoscale multiphase separation at La(2/3)Ca(1/3)MnO3/SrTiO3 interfaces

55Mn nuclear magnetic resonance experiments are reported on a series of fully strained epitaxial La(2/3)Ca(1/3)MnO3 thin films on SrTiO3. We have found evidence of multiple phase segregation into ferromagnetic metallic and nonmetallic regions as well as regions that are nonferromagnetic and insulating. These insulating regions are mainly located close to interfaces and may have a significant impact on the performance of spin-tunnel devices. As a result of phase segregation, the ferromagnetic coupling within the metallic regions is depressed. This accounts for the reduction of the Curie temperature and conductivity in nanometric thin films.     

Development of an optimised, standard-compliant procedure to calculate sound transmission loss: numerical measurements

Availability of low-frequency characteristics of sound insulating elements is required in order to achieve efficient control of noise sources and reduced level of annoyance in the low-frequency range. Previous work by the author has addressed the problem of designing an enhanced calculation environment for the estimation of sound Transmission Loss (TL). In this work, numerical prediction of TL of sound insulating structures is performed using a procedure, which is in compliance with the ISO recommendations for acoustic measurements. The room-structure-room finite element representation, employed to solve sound propagation and sound-structure interaction problems, as well as the dynamic coupling of and the sound energy propagation through successive air-structure layers are investigated. Several cases of single-layered plain structures of common sound insulating materials such as steel, glass and aluminium with various thickness values are modelled and the calculated TL is compared with published experimental results. It is shown that although the detailed dynamic response of the structures is not accurately predicted due to uncertain parameters, such as the test-specimens dimension and vaguely known boundary conditions, the octave band averaged TL is sufficiently predicted for the majority of the tested materials. Extension of the method to multi-layered structures is attempted and discrepancies at low frequencies are depicted. Finally, the effect of poor mode distribution of the measurement rooms upon the estimated TL is examined in focus. Comparison is performed between TL values calculated with typical and intensely modified transmission rooms. The low-frequency improvement on measurements, when the second ones are used, is demonstrated.     

Magnetoelastic interactions in multilayer microwires

Amorphous magnetic microwires exhibit outstanding magnetic characteristics as giant Barkhausen jump or nearly non-hysteretic behaviour that make them very suitable as sensing elements in various devices. In this article, we overview the different families of microwires and summarise most relevant results in connection with the magnetoelastic interlayer interactions in multilayer microwires. Improved magnetic behaviour can be observed in bi-layer microwires consisting of a magnetic nucleus coated by insulating cover. By employing combined sputtering and electroplating techniques, a novel series of multilayered magnetic microwires have been recently introduced. They consist typically of a magnetic nucleus and several shells having insulating and/or metallic nature, the latter magnetic or not. The magnetic character of the multilayer microwire will then depend on the magnetoelastic coupling between layers. External layers induce compressive stresses on the soft amorphous nucleus resulting in induced axial or circular anisotropies depending on magnetostriction sign. In a similar way, reduction of measuring temperature results in tensile stress as a consequence of different thermal expansion coefficients of various layers.     

Point-contact diodes

Point-contact diodes based either on the mechanism of electronic tunnelling through an insulating barrier or on the thermoelectric effect of hot carriers in heavily doped semiconductors are described. The requirements necessary for these devices to be used as harmonic generators and mixers in the 2–200 THz region are emphasized, and some new developments are reported. Outstanding characteristics of the devices which use either the semimetal antimony or the semiconductors SnTe or Bi₂Te₃ as a diode base are high detection sensitivity and high mechanical stability over long periods of use either as harmonic generators or as mixers.     

双功能电极改善有机发光器件效率滚降的研究

针对磷光器件存在严重的效率滚降,进而制约有机电致发光器件的实用化进程的问题,提出采用超声喷涂Poly(3,4-ethylenedioxythiophene)Polystyrene Sulfonate(PEDOT:PSS)作为透明电极,制备了红、绿、蓝三色有机电致发光器件.利用超声喷涂工艺材料利用率高的特点,起绝缘作用的水溶性PSS分子链在PEDOT:PSS透明电极中得到保留,使该透明电极具有空穴缓冲作用.这种双功能性,提高了器件在高电流密度下的载流子平衡性,降低了红、绿、蓝三色发光层中的极化子浓度,改善了红、绿、蓝三色器件的效率滚降问题,从最高外量子效率所在亮度到10000cd/m^2的电流效率滚降分别仅为14.9%、12.4%和16.0%.该结果表明,双功能性电极的引入显著改善了有机电致发光器件中载流子平衡性,具有降低三基色器件效率滚降的普适性,对实现高亮度、高效率发光器件具有重要意义.     

Centimeter- and millimeter-wavelength matched loads based on microwave photonic crystals

Novel, small-sized broadband matched loads in the form of disordered photonic crystals containing nanometer metallic and insulating layers have been developed. It has been proposed to form insulating layers with different permittivities and low dissipation factors in both centimeter and millimeter wavelength ranges from the composites that consist of insulating matrices filled with air inclusions.     

Effect of RF power on the optical and morphological properties of RF plasma polymerised linalyl acetate thin films

Thin films derived from linalyl acetate were fabricated using the Radio Frequency (RF) plasma polymerisation technique between RF power levels of 10 and 75 W. The optical properties of the films were investigated using spectroscopic ellipsometry and UV-vis spectroscopy between 200 and 1000 nm. An optical band gap of approximately 3 eV for all power levels was determined from Tauc plots. The surface morphology and hardness of the material were studied using AFM and nano-indentation respectively to determine the effect of RF power on the thin film properties. Smooth surfaces with an average roughness of approximately 0.2 nm with consistent morphology were obtained across all power levels, while hardness demonstrated a linearly increasing dependence on RF deposition power, with values ranging between 0.29 and 0.44 GPa. These studies indicate the ability to tailor film characteristics by varying the RF deposition power, and the potential for the films to be used within electronic devices as encapsulation layers, insulating layers, or as semiconducting layers with the introduction of charge carriers to the chemical structure of the material.     

The effect of metallic screens on the spectrum of exchange dipole hybrid electromagnetic-spin waves

A theory of exchange dipole hybrid electromagnetic-spin waves is elaborated. The waves propagate in arbitrary magnetized five-layer screened structures where a ferromagnetic layer is separated from the metallic screens by two insulating layers on both sides, the layers having different permittivities. Within this theory, the effect of the screens on the hybrid surface wave spectrum in layered structures is analyzed. The structures consist of a ferromagnetic film that is applied on an insulating substrate and is in contact with a ferroelectric plate.     

Rapid-scan Fourier transform spectroscopy of 2-D space charge layers in semiconductors

Rapid-scan FTS has been used to study the dynamic properties of 2-D space charge layers in metal-oxide-semiconductor devices. We report on special experimental techniques, which are made possible by rapid-scan FTS and the ability to vary the transmission of these devices with a voltage. We discuss Drude absorption and excitation of 2-D plasmon, intersubband and cyclotron resonances as possible applications.     

金刚石薄膜电致发光研究

报道了金刚石薄膜电致发光现象.为进一步提高金刚石薄膜蓝区电致发光强度,分别采用了硼氮双掺杂法和稀土掺杂法制备出了金刚石薄膜电致发光器件,并采用低电容率的本征金刚石薄膜和氧化硅薄膜为绝缘层的夹层式器件结构.研究结果显示:采用稀土铈掺杂可以有效地提高金刚石薄膜蓝区电致发光强度,其蓝区最大电致发光强度可达3.5 cd/m2;采用低电容率绝缘膜的夹层式结构,能有效地提高电子进入发光层时的能量,并有助于提高器件发光的稳定性和发光寿命.     

Infrared absorption and Raman scattering on coupled plasmon-phonon modes in superlattices

We theoretically consider a superlattice formed by thin conducting layers spatially separated between insulating layers. The dispersion of two coupled phonon-plasmon modes of the system is analyzed by using the Maxwell equations, with the retardation effect included. Both transmission for the finite plate and the absorption for the semi-infinite superlattice in the infrared are calculated. Reflectance minima are determined by the longitudinal and transverse phonon frequencies in the insulating layers and by the density-state singularities of the coupled modes. We also evaluate the Raman cross section from the semi-infinite superlattice. The text was submitted by the authors in English.     

热退火对ZnS:ErF3薄膜交流电致发光(ACEL)特性的影响

本文研究了退火温度以及退火时间的改变对ZnS:ErF3薄膜ACEL特性的影响。从ACEL光谱上可以看到,随退火温度增加或退火时间的积累,对应于4F9/2→4I15/2跃迁的谱线强度都有明显的增强。通过对EL衰减等实验结果进行分析,我们认为在不同的温度下退火将会产生不同的影响,当退火温度低于300℃时,退火将使ZnS的结晶性能得到改善,并使有效的发光中心数目增加,当退火温度高于300℃时,将产生一些新的缺陷。它们都导致了Er3+离子间交叉弛豫过程的加剧,使4F9/2能级的辐射得到加强。     

High-dose carbon implantations into silicon: fundamental studies for new technological tricks

Depending on the implantation temperature, the implantation of carbon ions into silicon at high doses results in the formation of either amorphous SiC_x or crystalline 3C-SiC precipitates. Various aspects of the precipitation behaviour observed, such as the impeded nucleation, the limited growth and the resulting sensitivity to ballistic destruction are attributed to the large interfacial energy between crystalline silicon and 3C-SiC. Periodically arranged amorphous SiC_x nanoclusters, which are formed at lower temperatures, are shown to promote amorphisation by their surrounding stress field and to represent sinks for silicon self-interstitials, which can be activated by annealing at 900 °C. By control of the depth distribution of equally sized, oriented 3C-SiC precipitates formed at higher implantation temperatures, it is possible to establish suitable starting conditions for the formation of buried homogeneous, single-crystalline 3C-SiC layers during a post-implantation anneal. The properties of these ion-beam-synthesised SiC layers are described and attempts to combine them with insulating and metallic layers are reviewed. A survey is given of the emerging applications of ion-beam-synthesised buried SiC layers and microstructures in electronic, optical and micromechanical devices and as large-area SiC pseudosubstrates. Received: 11 November 2002 / Accepted: 12 November 2002 / Published online: 4 April 2003 RID="*" ID="*"Corresponding author. Fax: +49-821/598-3425, E-mail: lindner@physik.uni-augsburg.de     

基于液体的电控光学成像系统

提出一种基于液体的电控光学成像器件,其结构是一个容纳有三层液体的圆柱容器,上下两层是导电液体,中间一层是油性液体.圆柱容器的内壁依次涂覆了透明导电层和绝缘介质层.在透明导电层与上下导电液体间施加两个不同的外部电压,分别用来控制容器中两个液体界面的形状.两个外加电压的适当匹配使该光学成像器件在焦距变化的同时保证像面位置不动.文章以器件对无穷远处成像为例,基于高斯光学理论对器件做了详细的计算,给出了两个外加电压的匹配关系以及系统的焦距表达式,并对系统做了相关的模拟分析,分析的结果表明本文所设计的光学成像器件的变倍比可达1:1.5,体现该器件是一种可靠的变焦光学成像器件.