High slope efficiency and low threshold in a laser-diode-pumped passively Q-switched ion-implanted Nd:YVO<Subscript>4</Subscript> planar waveguide laser with GaAs saturable absorber

A passively Q-switched waveguide laser, to our knowledge, has been firstly demonstrated in Nd: YVO₄ crystal formed by 3 MeV Si⁺ ion implantation at a dose of 1 × 10¹⁵ ions/cm² at room temperature, in which GaAs was used as saturable absorber. The dependences of the average output power, pulse width, pulse repetition rate on absorbed pump power have been measured at different output plane mirror transmissions. At an absorbed pump power of 78.8 mW and output transmission of 20%, the shortest pulse width of 3.88 ns was obtained, corresponding to the peak power and single pulse energy of 212 W and 0.82 μJ, respectively. The threshold pump power was as low as 40 mW, and the slope efficiency was about 64.5% when the absorbed pump power was lower than 70 mW.     

Room temperature operation of 2-μm microchip Tm,Ho:Lu2SiO5 laser

Room temperature operation of a c-cut microchip Tm,Ho:Lu₂SiO₅ laser end-pumping by a fibercoupled laser-diode is reported. A 4.03 W incident pump power is used to generate a maximum laser output of 98 mW, representing 2.43% optical-to-optical conversion efficiency and a 4.38% slope efficiency corresponding to incident power. In the experiment, the oscillating wavelengths shifting from 2.084 to 2.089 μm has been observed and approximately 10 mW single 2.087 μm wavelength oscillation has been obtained by changing the pump power to 1.43 W and the position of the pump focus.     

Efficient intracavity second-harmonic generation at 930 nm in a BiB<Subscript>3</Subscript>O<Subscript>6</Subscript> crystal

It is reported that efficient continuous-wave (CW) blue laser generation at 465 nm in a BiB₃O₆ (BiBO) crystal at type-I phase matching direction performed with a diode-pumped Nd³⁺:YAlO₃ (Nd:YAP) laser. With incident pump power of 18.4 W, output power of 823 mW at 465 nm has been obtained using a 10 mm-long BiBO crystal. At the output power level of 823 mW, the output stability is better than 2.3%.     

High efficiency 1341 nm Nd:GdVO<Subscript>4</Subscript> laser in-band pumped at 912 nm

A high-efficiency 1341 nm Nd:GdVO₄ laser in-band pumped at 912 nm is demonstrated for the first time. Using an all-solid-state Nd:GdVO₄ laser operating at 912 nm as pump source, 542 mW output was obtained with 1.14 W absorbed pump power. The slope efficiency with respect to the absorbed pump power was 56.6%, and the fluctuation of the output power was better than 2.6% in the given 30 min. The beam quality factor M ₂ is 1.15.     

Diode-pumped continuous-wave Nd<Superscript>3+</Superscript>:YAlO<Subscript>3</Subscript> intracavity-doubled red laser

It is reported that efficient continuous-wave (CW) red laser generation at 670 nm in a LBO crystal at type-I phase matching direction performed with a diode-pumped Nd³⁺:YAlO₃ (Nd:YAP) laser. With incident pump power of 15.6 W, output power of 273 mW at 670 nm has been obtained using a 10 mm-long LBO crystal. At the output power level of 273 mW, the output stability is better than 3.7%.     

Diode-pumped passively Q-switched Nd:YVO<Subscript>4</Subscript> laser with a carbon nanotube saturable absorber

A diode end-pumped passively Q-switched Nd:YVO₄ laser with a transmission-type single-walled carbon nanotube saturable absorber is first demonstrated in this paper. The maximum continuous wave (CW) output power of 477 mW is obtained at the incident pump power of 1490 mW with the output transmission T = 10%, resulting in slope efficiency of 41.3%. For Q-switching operation, the measured pulse duration of 332 ns, the pulse energy of 326 nJ and the peak power of 982 mW are respectively obtained.     

Diode-pumped Nd:YVO<Subscript>4</Subscript> intracavity-doubled red laser at 693 nm

It is reported that efficient continuous-wave (CW) red laser generation at 693 nm in a LBO crystal at type-I phase matching direction performed with a diode-pumped Nd:YVO₄ laser. With incident pump power of 18.2 W, output power of 278 mW at 693 nm has been obtained using a 10 mm-long LBO crystal. At the output power level of 278 mW, the output stability is better than 2.9%.     

Diode-pumped Yb:Y<Subscript>2</Subscript>SiO<Subscript>5</Subscript>-LiB<Subscript>3</Subscript>O<Subscript>5</Subscript> cyan laser at 501.7 nm

We describe the output performances of the 928 nm ⁴ F _3/2 → ⁴ I _9/2 transition in Nd:CLNGG under diode-laser pumping. An end-pumped Nd:CLNGG crystal yielded 1.3 W of continuous-wave output power for 17.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 11.2%. Furthermore, with 17.8 W of diode pump power and the frequency-doubling crystal LiB₃O₅ (LBO), a maximum output power of 260 mW in the blue spectral range at 464 nm has been achieved. The blue output power stability over 4 h is better than 3.2%.     

CW and passive Q-switching of 1331-nm Nd:GGG laser with Co<Superscript>2+</Superscript>:LMA saturable absorber

In this paper, the output performances at 1331 nm in continuous-wave (CW) operation and the passive Q-switching regime of a Nd:Gd₃Ga₅O₁₂(Nd:GGG) laser crystal have been investigated under pumping with diode lasers. A maximum CW output power of 1.5 W was reached at an incident pump power of 7.5 W; the overall optical-to-optical efficiency and the slope efficiency with respect to the pump power were 21.5% and 19.4%, respectively. The passive Q-switching regime was achieved with Co²⁺:LaMgAl₁₁O₁₉ (Co²⁺:LMA) saturable absorber (SA) crystals. A maximum average output power of 183 mW was recorded with a Co²⁺:LMA SA with initial transmission T _i of 90%. The pulse energy was 18.7 μJ and the pulse duration was 26.1 ns, which correspond to a pulse peak power of 0.7 kW. With a Co²⁺:LMA SA with T _i=81%, the average power decreased to 131 mW. However, the pulse energy increased to 21.4 μJ, the pulse duration was 16.4 ns and the pulse peak power increased to 1.3 kW.     

Continuous wave laser operation of Yb<Superscript>3+</Superscript>:YVO<Subscript>4</Subscript>

We have demonstrated the continuous wave laser operation of Yb³⁺:YVO₄. For Ti:Al₂O₃ laser pumping at 985 nm, a maximum slope efficiency of 41.1% and a threshold pump power of 76 mW were obtained. The maximum output power was 433 mW at a laser wavelength of 1037 nm.Using a cw diode laser around 974 nm as a pump source, a slope efficiency of 10.9% and a maximum output power of 152 mW were achieved at a laser wavelength of 1039 nm. The laser threshold pump power was 608 mW with respect to the absorbed pump power. The effective emission cross-sections for the ²F_5/2²F_7/2 transition were determined using the Füchtbauer–Ladenburg equation. The maxima of the effective absorption and emission cross-sections were found at 984.5 nm (6.74×10^-20 cm²) in -po larization and 985.5 nm (4.28×10^-20 cm²) also in -p olarization. The upper laser level lifetime was measured with suppression of radiation trapping and is around 318 s. PACS 42.55.Rz; 42.55.Xi; 42.70.Hj     

LD抽运Nd:LuVO4微片激光器性能研究

报道了一类新型的LD端面抽运Nd：LuVO₄微片激光器，讨论了在不同掺杂浓度，不同厚度和不同透过率下的激光性质，测定了在不同抽运功率下，微片最佳激光输出功率与LD抽运温度的关系.在2W抽运功率下获得923mW的1064nm激光输出，阈值为48mW，斜效率为52%.对微片制冷后斜效率提高到59%. 关键词： LD抽运 微片激光器 4')" href="#">Nd：LuVO₄     

Quasi-cw laser action in K5Nd(MoO4)4

We report on room temperature quasi-cw laser action in K₅Nd(MoO₄)₄ at a wavelength of 1.067 μm. The crystal was pumped with the 5140 Å line of an argon ion laser. Due to thermal effects actual cw lasing was not possible. Chopping the pump light with a low duty cycle of 1∶1000 leads to quasi-cw laser action and stable output power. We have determined the fundamental laser parameters: threshold pump powerA _T=15 mW, slope efficiency η=22%, and internal lossesL=2.5%. In order to explain the measured relaxation oscillations, diffusion of the excited 4f-excitons is considered. According to a recently developed theory, a diffusion constant ofD=2×10^?6cm²/s explains the observed results.     

Diode-pumped quasi-three-level Nd:CLNGG laser at 928 nm

We describe the output performances of the 928 nm ⁴ F _3/2 → ⁴ I _9/2 transition in Nd:CLNGG under diode-laser pumping. An end-pumped Nd:CLNGG crystal yielded 1.3 W of continuous-wave output power for 17.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 11.2%. Furthermore, with 17.8 W of diode pump power and the frequency-doubling crystal LiB₃O₅ (LBO), a maximum output power of 260 mW in the blue spectral range at 464 nm has been achieved. The blue output power stability over 4 h is better than 3.2%.     

Lasing of diode-pumped c-cut Tm, Ho:YAlO3

We report on a diode-pumped Tm, Ho:YAlO₃ (c-cut) laser operating at 274 K. The maximum output power reaches 163 mW at an absorbed pump power of 2.3 W. A conversion efficiency from the absorbed pump power to laser output of 7.1% is demonstrated in Tm, Ho:YAlO₃, corresponding to a slope efficiency of 11.1%. The output center wavelength of Tm, Ho:YAlO₃ is 2102 nm with about a 2-nm FWHM. As far as we know, our work represents the first investigation of the laser performance of c-cut Tm, Ho:YAlO₃ at 274 K.     

镱钠共掺氟化钙锁模激光器产生190 fs光脉冲

在半导体激光器高功率抽运的镱、钠共掺氟化钙(Yb, Na:CaF₂)激光器中, 通过对晶体的负热透镜效应的数值模拟,进行激光器腔型的调节和优化,使得该激光器在采用2%的耦合输出镜和吸收抽运功率为7.8 W的条件下,获得了脉冲宽度为190 fs、平均输出功率为503 mW、中心波长为1034 nm、重复频率为82.4 MHz的连续锁模脉冲序列. 如果计算晶体表面反射等其他形式的泄漏输出,激光器的总平均输出功率为905 mW. 关键词： Yb 2晶体')" href="#">Na:CaF₂晶体 激光二极管抽运 飞秒激光     

Diode-pumped Nd<Superscript>3+</Superscript>:YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> laser at 1338 nm

A high-power diode -pumped Nd³⁺:YAl₃(BO₃)₄ (Nd:YAB) laser emitting at 1338 nm is described. At the incident pump power of 9.8 W, as high as 734 mW of continuous-wave (CW) output power at 1338 nm is achieved. The slope efficiency with respect to the incident pump power was 9.0%. To the best of our knowledge, this is the first demonstration of such a laser system. The output power stability over 60 min is better than 2.6%. The laser beam quality M ² factor is 1.21.     

The characteristics of diode-pumped acousto-optic Yb:Y2Ca3B4O12 laser for Q-switching and Q-switched mode-locking

Q-switching and Q-switched mode-locked Yb:Y₂Ca₃B₄O₁₂ lasers with an acousto-optic switch are demonstrated. In the Q-switching case, an average output power of 530 mW is obtained at the pulse repetition rate of 10.0 kHz under an absorbed pump power of 6.1 W. The minimum pulse width is 79 ns at the repetition rate of 1.7 kHz. The pulse energy and peak energy are calculated to be 231 μJ and 2.03 kW, respectively. In the Q-switched mode-locking case, the average output power of 64 mW with a mode-locked pulse repetition rate of 118 MHz and Q-switched pulse energy of 48 μJ is generated under the absorbed pump power of 6.1 W.     

Continuous wave and tunable laser operation of Yb3+ in disordered NaLa(MoO4)2

Continuous-wave Yb³⁺ laser operation is studied in single crystals of disordered NaLa(MoO₄)₂ at room temperature. The sample used was grown by the Czochralski technique and incorporates an Yb ion density of 3.1×10²⁰ cm^-3. The effect of the Yb concentration on some of the crystal properties is described as well as the spectroscopic Yb³⁺ properties at 5 K. Maximum slope efficiencies of about 40% for π and 38% for σ polarization were obtained under Ti:sapphire laser pumping near 976 nm, respectively. The maximum output power for the π polarization was 400 mW at 1039.5 nm, the threshold in this case amounted to 240 mW (absorbed pump power). The laser emission was tunable between 1016 and 1064 nm with a Lyot filter. Lasing was also realized by pumping with a fiber-coupled diode laser module. Maximum output power of 900 mW at 1035 nm was achieved in this case for the π polarization and the threshold was 280 mW. The results, in terms of output power and tunability, are superior in comparison to all previous reports on Yb-doped disordered double tungstate or molybdate crystals and represent a significant improvement in comparison to earlier experiments with low-doped Yb:NaLa(MoO₄)₂.PACS 42.55.Rz; 42.55.Xi; 42.70.Hj     

Diode-pumped Nd:CaYAlO<Subscript>4</Subscript>-KTP intracavity-doubled green laser at 540 nm

It is reported that efficient continuous-wave (CW) green laser generation at 540 nm in a KTP crystal at type-II phase matching direction performed with a diode-pumped Nd:CaYAlO₄ laser. With incident pump power of 18.2 W, output power of 324 mW at 540 nm has been obtained using a 5 mm-long KTP crystal. At the output power level of 324 mW, the output stability is better than 2.8%. The beam quality M ² values were equal to 1.34 and 1.22 in X and Y directions, respectively.     

Single-frequency Ti:Er:LiNbO3 distributed Bragg reflector waveguide laser with thermally fixed photorefractive cavity

The first single-frequency Ti:Er:LiNbO₃ distributed Bragg reflector waveguide laser with two thermally fixed photorefractive gratings as resonator mirrors is reported. The optically pumped (λ_p=1480 nm,120-mW incident power) laser emits up to 1.1 mW at λ_s=1561.1 nm. The threshold pump power is 70 mW. Received: 7 June 2001 / Published online: 30 October 2001