基于STM32的飞机电气负载管理中心设计

传统飞机远程配电系统使用采样电阻对模拟电参数进行采集,硬件电路繁琐,实时性、可靠性和采样效率在实用中很难满足系统要求;针对这种情况,设计一种基于STM32的飞机电气负载管理中心方案,采用RN8209计量芯片替代传统的采样电阻,设计模拟量采集模块电路,通过MODBUS协议与控制内核通信,完成汇流条以及负载电压、电流的采集;以μC/OS-II实时嵌入式操作系统为软件平台,给出了电气负载管理中心的整体框图,硬件接口电路和系统程序设计;实验结果表明,电气负载管理中心实时性得到有效提高,采样精度得以保留;该方案有效地简化了硬件电路,获得满意的采样效率,同时系统的可靠性增强。     

数字化电能表检测及与“溯源”系统闭环解决方案系统研究溯源分析

为解决新型数字化电能表计量检测与“溯源”问题,通过引入“模拟式计量合并单元”、“计算型模拟标准表”、“数字合成模拟功率源”概念及设备,给出了数字化电能表“标准源比较法”、“标准表比较法”、“综合比较法”三种检测方案及其完整的标准传递/“溯源”系统,合理地把数字式电能表检测与“溯源”纳入到传统电能表标准传递/溯源系统中,使数字化电能计量完全沿用模拟计量系统,简单、科学、经济地解决了数字化电能表检测与“溯源”等技术问题。数字量与模拟量电能计量体系的统一,承继了电能计量标准传递/溯源系统不间断链接性、稳定性、严肃性并具备一定的逻辑性、合理性、严谨性,降低了数字化计量系统风险性。在数字化电能计量过程中去“数字化”是对电能计量技术的一种创新与发展。     

网络阻值计算的一个递推关系

电阻计算是电路分析的一项基本任务。本文基于二端口网络的传递关系,导出了一个容易记忆的电阻递推式,该式给出了网络电阻与网中某一电阻被短路和断路后的电阻间关系。每使用一次递推式,待处理的网络中电阻个数就减少一个。利用该递推公式反复递推,就可把复杂网络分析任务变成能用串并联分析的简单任务。本文以电桥、门型网络和田字网络三个电路为例,演示了运用新递推式分析的过程。     

微弱信号检测技术在超导电阻测量方面的应用

随着近年来超导技术应用范围的不断扩大,超导技术的影响已经波及到了各个学科领域.本文通过对超导电阻特性的分析研究,提出了一种基于微弱信号检测的超导体电阻测量的新方案.利用高性能DSP芯片,软件实现了超导体电阻的测量;利用单片机配合双积分A/D转换器测量超导体的环境温度.实验表明,本测量系统可有效地检测微弱的超导电阻信号,本系统充分显示出了自身在超导体电阻测量等微弱信号检测方面的优越性.     

n阶网络任意2节点间的等效电阻公式

研究了一类n阶电阻网络任意2节点间的等效电阻问题,解决了一个之前一直没有解决的电阻网络难题.首先给出了一个任意2节点间等效电阻的普适公式,然后采用网络分析方法构建了差分方程模型以及边界条件约束方程模型,由此证明了所给出的等效电阻公式.最后给出了无穷网络的等效电阻公式,并且将特殊情形下的结论与其他结论进行了对比与讨论,验证了本文所得结论的正确性.     

3×n阶蛛网等效电阻猜想的证明

本文应用基尔霍夫节点电流定律和回路电压定律,建立了3元矩阵方程模型,构造了矩阵变换方法,经过一系列严格的推导与计算,较好地证明了3×n阶蛛网等效电阻猜想的正确性,同时给出了3×n阶蛛网等效电阻公式.通过比较分析进一步给出了3×n阶蛛网在无限情形时的等效电阻公式,并且探讨了3×n阶蛛网等效电阻的单调性质.     

中国的量子化霍尔效应电阻标准

基于量子化霍尔效应建立的电阻量子化标准已在世界范围内取得了巨大的成功。为了从量子化霍尔电阻导出十进电阻量值,中国计量科学研究院建立了高准确度的低温电流比较仪。2000年中国和日本的双边比对表明,两国用量子化霍尔电阻导出的1Ω电阻量值仅差1.3nΩ,在公开发表的类似比对数据中为最好结果。中国计量科学研究院用计算电容法测定的Klitzing常数h/e^2的SI值为国际上四个最佳实验结果之一,已在1998年的新一轮基本物理常数平差工作中被正式采用。     

水介质形成线泄漏电阻对充电效率的影响

研制了一种基于直线变压器技术的脉冲功率系统,采用水介质脉冲形成线并联充电作为脉冲形成装置。分析了给形成线充电时泄漏电阻对充电电压效率和能量效率的影响,给出了泄露电阻的能量损耗率计算公式;结合实验参数计算了本实验中水介质形成线的泄漏电阻,介于8.2kΩ与3kΩ之间。根据泄露电阻取值范围,分析了双模块和四模块实验中水介质形成线充电过程中的电压效率与能量效率,结果表明水介质形成线的能量损失占其获得能量的5%～12%;计算结果同时表明:随着实验模块数增加,能量损失逐渐增大。     

分数阻值的电阻化简问题

给出m n个阻值为1的电阻, 可以组成阻值为分数阻值m n 的电阻, 本文给出了一种将它化简, 以使所用 的电阻个数最少, 阻值仍为m n 的方法     

3×n阶网络等效电阻的另一个普适规律

再次研究了3×n阶电阻网络的等效电阻,通过网络分析构建差分方程组模型,应用矩阵变换方法巧解差分方程组,给出了3×n阶电阻网络等效电阻的另外一个优美、简洁的普适规律,同时给出了无穷3×n阶电阻网络的等效电阻,并在最后对特殊情形的相关结果进行了比较与验证.     

Resistance metrology based on the quantum Hall effect

The Quantum Hall effect (QHE), a macroscopic effect of solid state physics, provides a universal representation of the unit of resistance which depends on the elementary charge e and the Planck constant h only. If implemented according to specific technical guidelines, the quantum resistance standard can be reproduced with a relative uncertainty below one part in 10⁹. Calibrations of wire resistors in terms of the QHE can be carried out with similarly low uncertainties by using resistance bridges equipped with cryogenic current comparators, the performance of which relies on the magnetic flux sensitivity of superconducting quantum interference devices (SQUID). Using a special connection technique, the fundamental properties of the QHE allow the fabrication of arrays combining a large number of single Hall bars connected in series or in parallel and which demonstrate quantum accuracy. Similar to the case of voltage metrology with Josephson array voltage standards, an improvement of resistance metrology is expected from the availability of quantum Hall array resistance standards (QHARS). The QHE Wheatstone bridge, which is another application of the same connection technique, opens the way to new universality tests of the QHE with a relative uncertainty below one part in 10¹¹. At frequencies in the kilohertz range, the recent progress in the application of coaxial bridges to the QHE allows metrologists to operate a quantum resistance standard with alternating current reaching an accuracy of some parts in 10⁸. Finally, the discovery of the QHE in graphene opens new horizons for the resistance metrology.     

Standard artifact for the geometric verification of terrestrial laser scanning systems

Terrestrial laser scanners are geodetic instruments with applications in areas such as architecture, civil engineering or environment. Although it is common to receive the technical specifications of the systems from their manufacturers, there are not any solutions for data verification in the market available for the users. This work proposes a standard artifact and a methodology to perform, in a simple way, the metrology verification of laser scanners.The artifact is manufactured using aluminium and delrin, materials that make the artifact robust and portable. The system consists of a set of five spheres situated at equal distances to one another, and a set of seven cubes of different sizes. A coordinate measuring machine with sub-millimetre precision is used for calibration purposes under controlled environmental conditions. After its calibration, the artifact can be used for the verification of metrology specifications given by manufacturers of laser scanners.The elements of the artifact are destinated to test different metrological characteristics, such as accuracy, precision and resolution. The distance between centres of the spheres is used to obtain the accuracy data, the standard deviation of the top face of the largest cube is used to establish the precision (repeatability) and the error in the measurement of the cubes provides the resolution value in axes X, Y and Z. Methodology for the evaluation is mainly supported by least squares fitting algorithms developed using Matlab programming.The artifact and methodology proposed were tested using a terrestrial laser scanner Riegl LMSZ-390i at three different ranges (10, 30 and 50 m) and four stepwidths (0.002°, 0.005°, 0.010° and 0.020°), both for horizontal and vertical displacements. Results obtained are in agreement with the accuracy and precision data given by the manufacturer, 6 and 4 mm, respectively. On the other hand, important influences between resolution and range and between resolution and stepwidth are observed. For example, the two smaller cubes cannot be well detected in any case and, as must be expected, the increase in range and stepwidth produces a decrease in the quality of the detection for the larger ones.     

太赫兹计量研究与标准研制进展

太赫兹作为新的技术手段在物质成分识别、高速通信、生物医学、安检成像和军事国防等领域具有重要的作用。太赫兹技术的各种应用都建立在对太赫兹本身及其与物质相互作用测量的基础上,因此准确的太赫兹参数测量及相关量值溯源是太赫兹应用的技术支撑和保障。介绍中国计量科学研究院在太赫兹辐射参数计量标准研究中形成的测量技术和溯源方法、研制的测量仪器和测量装置、制定的计量校准法规和建立的计量标准装置,对太赫兹辐射时域、频域、空域和强度等参数给出了量值溯源传递图并进行了测量不确定度分析。提出的太赫兹计量方法和标准装置可保障太赫兹技术研究和应用中的量值可靠,也可为其他太赫兹参数的测量提供参考。     

Modification of the electrical properties in Fe-Al2O3 granular thin films due to increased bias potential

We studied the electrical properties in Fe-Al₂O₃ granular films when the injected direct current or bias potential are varied in the low-field regime (eΔV?k_BT). Measurements of the electrical resistance as a function of temperature and applied bias at different temperatures were performed. We found that the electrical properties are best described using variable range hopping. The variation in resistance showed unexpected characteristics in distinct regions of potential. These regions of potential could be due to modification of the electronic localization length. We have shown that the electrical resistance decreases when the applied bias and/or current increases. We associate this behavior of the resistance with the activation of new electronic paths. The total resistance of our samples is reduced as additional parallel electronic paths are formed.     

Physical properties and special characteristics of the electron structure of Co2Si-Ni2Si alloys

The specific electrical resistance, absolute thermo-emf, Hall coefficient, thermal conductivity, and paramagnetic susceptibility of Co₂Si-Ni₂Si solid solutions are given as functions of temperature (80–350?K). An explanation is offered for the anomalous concentration dependence of all these properties on the basis of interband s → d transitions. The properties of the alloys with compositions close to Ni₂Si are explained on the basis of the linear-correspondence model.     

Two-dimensional electron gas at the interface of Ba<Subscript>0.8</Subscript>Sr<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript> ferroelectric and LaMnO<Subscript>3</Subscript> antiferomagnet

The temperature dependence of the electrical resistance has been studied for heterostructures formed by antiferromagnetic LaMnO₃ single crystals of different orientations with epitaxial films of ferroelectric Ba_0.8Sr_0.2TiO₃ deposited onto them. The measured electrical resistance is compared to that exhibited by LaMnO₃ single crystals without the films. It is found that, in the samples with the film, for which the axis of polarization in the ferroelectric is directed along the perpendicular to the surface of the single crystal, the electrical resistance decreases significantly with temperature, exhibiting metallic behavior below 160 K. The numerical simulations of the structural and electronic characteristics of the BaTiO₃/LaMnO₃ ferroelectric?antiferromagnet heterostructure has been performed. The transition to the state with two-dimensional electron gas at the interface is demonstrated.     

AC impedance analysis of LaLiMo2O8 electroceramics

Complex impedance analysis of a new rare earth-based ceramic oxide, LaLiMo₂O₈, prepared by a standard solid-state reaction technique has been carried out. Material formation under the reported conditions has been confirmed by X- ray diffraction studies. A preliminary structural analysis indicates the crystal structure to be orthorhombic. Electrical properties of the material sample have been studied using AC impedance spectroscopy technique. Impedance spectrum results indicate that the electrical properties of the material are strongly dependent on temperature and it bears a good correlation with the sample microstructure (i.e. the presence of bulk, grain boundary, etc.) in different temperature ranges. Evidences of temperature-dependent electrical relaxation phenomena in the material have also been observed. The bulk resistance, evaluated from complex impedance spectrum has been observed to decrease with rise in temperature showing a typical negative temperature coefficient of resistance (NTCR)-type behavior like that of semiconductors. The DC conductivity shows typical Arrhenius behavior when observed as a function of temperature. The AC conductivity spectrum has provided typical signature of an ionically conducting system and is found to obey Jonscher's universal power law. Modulus analysis has indicated the possibility of hopping mechanism for electrical transport processes in the system with non-exponential-type conductivity relaxation.     

Relaxation of the normal electrical resistivity induced by high-pressure in strongly underdoped YBa2Cu3O7–δ single crystals

We investigate the relaxation of the normal electrical resistivity, induced by high-pressure in YBa₂Cu₃O_6.45 single crystals. It is determined that the pressure affects to the phase composition of the sample. Under pressure phases with different (but similar) critical temperatures form. It is determined that the application-removal pressure process is completely reversible. Above T_c the temperature dependence of the resistivity in the layers' plane at different hydrostatic pressures can be approximated with high accuracy with the scattering of electrons by phonons model. With increasing pressure, the residual resistance is reduced and the contribution of intraband s–s scattering increases. Additionally, the role of the interband s–d scattering and the Debye temperature is enhanced.