Probe measurements in a discharge with liquid nonmetallic electrodes in air at atmospheric pressure

Discharges with liquid nonmetallic electrodes of much interest for applications are investigated. It is found that a dc discharge between two streams of tap water in air at atmospheric pressure is stable at a currentof 40≤I≤100 mA. The discharge exists in the diffuse (volume) form with a relatively low current density (∼0.2 A/cm²) and a high (above one kilovolt) voltage drop across the air gap (∼1 cm) between the water electrodes. The current density and voltage depend only slightly on the discharge current. Probe measurements show that three regions can be distinguished in the discharge: two electrode regions (1–2 mm in length) and a discharge column with a constant electric field of ≈0.8 kV/cm (i.e., E/N≈20 Td, because the gas in the discharge is heated up to 1500–2000 K). The average electric field strength near the electrodes is E≈2–3×10³ V/cm (E/N≈60–80 Td). The charged particle density in the column is n ∼ 10¹² cm⁻³. The probe measurements of n agree with the previous microwave absorption measurements. The water vapor concentration in the column is also estimated from probe measurements.     

Stimulated brillouin scattering of electromagnetic ion cyclotron waves in a plasma

Using the fluid model for the nonlinear response of ions, we have studied the nonlinear scattering of an electromagnetic ion cyclotron wave off the ion acoustic wave in a plasma. The low frequency nonlinearity arises through the parallel ponderomotive force on ions and the high frequency nonlinearity arises through the nonlinear current density of ions. For a typical nonisothermal plasma (T _e/T _i∼10) the threshold for this instability in a uniform plasma is ∼1mW/cm². At power densities ≳10² W/cm², the growth rate for backscatter turns out to be ∼10⁴s⁻¹.     

Optical properties of the ternary compound Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Se:Co

We present the results of experimental studies of the optical properties of cobalt-doped Cd _x H_1−x Se (x = 0.18) single crystals with cobalt ion concentrations of NCo = 5·10¹⁸, 5·10¹⁹, and 1·10²⁰ cm⁻³ at T = 90 K and 300 K. The composition (x = 0.18) of the Cd _x Hg_1−x Se solid solution was selected so that the hypothetical resonance level is found on the bottom of the conduction band. We show that the cobalt ions in the mercury selenide can form a resonance donor level only for cobalt concentrations N_Co < 5·10¹⁸ cm⁻³. For N_Co ∼ 5·10¹⁸ cm⁻³, the cobalt ions substitute for mercury atoms, forming a solid solution and leading to an increase in the bandgap width and a change in the physical properties. The solubility of cobalt in the HgSe lattice can be greater than 5%–10%. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 73–77, January–February, 2007.     

Thermal stability and radiation hardness of SiC-based schottky-barrier diodes

Pt/W/Cr/SiC Schottky-barrier diodes that retain good electrophysical parameters up to 450°C are studied. With the Auger electron spectroscopy (AES) method, it is shown that the thermal stability is provided by using a multilayer metal composition that ensures the metal/SiC interface stability. The surface-barrier structures obtained are tested for radiation hardness. They are irradiated by fast neutrons with a fluence of 4.42×10¹⁵ n/cm² and attendant γ radiation with a dose of 8.67×10⁵ R in the concentration range of N _d-N _a=10¹⁶−5×10¹⁷ cm⁻³. Irreversible modifications of the structures at N _d-N _a≤8×10¹⁶ cm⁻³ are found. The degradation of the parameters is inversely proportional to the doping level.     

Manganese-doped ZnSiAs<Subscript>2</Subscript> chalcopyrite: A new advanced material for spintronics

A new spintronics material with the Curie temperature above room temperature, the ZnSiAs₂ chalcopyrite doped with 1 and 2 wt % Mn, is synthesized. The magnetization, electrical resistivity, magnetoresistance, and the Hall effect of these compositions are studied. The temperature dependence of the electrical resistivity follows a semiconducting pattern with an activation energy of 0.12–0.38 eV (in the temperature range 124 K ≤ T ≤ 263 K for both compositions). The hole mobility and concentration are 1.33, 2.13 cm²/V s and 2.2 × 10¹⁶, 8 × 10¹⁶ cm⁻³ at T = 293 K for the 1 and 2 wt % Mn compositions, respectively. The magnetoresistance of both compositions, including the region of the Curie point, does not exceed 0.4%. The temperature dependence of the magnetization M(T) of both compositions exhibits a complicated character; indeed, for T ≤ 15 K, it is characteristic of superparamagnets, while for T > 15 K, spontaneous magnetization appears which correspond to a decreased magnetic moment per formula unit as compared to that which would be observed upon complete ferromagnetic ordering of Mn²⁺ spins or antiferromagnetic ordering of spins of the Mn²⁺ and Mn³⁺ ions. Thus, for T > 15 K, it is a frustrated ferro- or ferrimagnet. It is found that, unlike the conventional superparamagnets, the cluster moment μ _c in these compositions depends on the magnetic field: ∼12000–20000μ_B for H = 0.1 kOe, ∼52–55μ_B for H = 11 kOe, and ∼8.6–11.0μ_B at H = 50 kOe for the compositions with 1 and 2 wt % Mn, respectively. The specific features of the magnetic properties are explained by the competition between the carrier-mediated exchange and superexchange interactions.     

Feasibility of a low-voltage discharge in pure molecular hydrogen

The feasibility of initiating a low-voltage discharge in pure (free of readily ionizable impurity) molecular hydrogen is studied theoretically. A discharge with cathode fall φ₁ = 10 V, interelectrode gap L = 2 cm, and total hydrogen concentration \(N_{H_2 }^{(0)} = 2 \times 10^{15}\) cm^?3 is considered by way of example. The plasma parameters, including concentration \(N_{H^ - }\) of negative hydrogen ions H^?, are calculated. The concentration of H^? ions is maximal in the near-anode plasma and may reach \(\left( {N_{H^ - } } \right)_{\max } = 0.5 \times 10^{12}\) cm^?3. Concentration \(N_{H^ - }\) can be increased severalfold by introducing a small amount of cesium into the discharge, \(N_{Cs}^{(0)} \leqslant 10^{13}\) cm^?3. Cesium ionizes completely and concentrates in narrow near-electrode layers, which are depleted with the plasma in the purely hydrogen discharge. The discharge modifications studied in this work may be of interest as low-voltage volume plasma sources of H^? ions under conditions when a high concentration of cesium in the source plasma is undesirable.     

Composition of a non-self-sustained discharge plasma in an N2: O2: H2O mixture at atmospheric pressure

The plasma composition of a discharge sustained by a pulsed ionization source of μs duration is computed. It is shown that, within a time interval of ∼10⁻⁶ s after the ionization pulse, the dependences of the ion densities on the electric field and ionization source power show features that should be taken into account when developing laser systems for controlling electric discharges in long air gaps. The effect of the plasma composition on the efficiency of electron photodetachment from negative O ₂ ⁻ ions is investigated by the example of a discharge initiation system consisting of two lasers with different pulse durations and wavelengths. Plasmochemical processes under conditions of enhanced electron photodetachment from negative O ₂ ⁻ ions are simulated. It is shown that photodetachment can increase the electron density for a time of <10⁻⁵ s.     

Effect of the humidity on the uptake of NO<Subscript>3</Subscript> on coatings composed of MgCl<Subscript>2</Subscript> · 6H<Subscript>2</Subscript>O and MgBr<Subscript>2</Subscript> · 6H<Subscript>2</Subscript>O and mixtures thereof with NaCl

The reactive uptake of NO₃ radicals on the surface of wetted individual X salts and of wetted X-NaCl salts (X = MgCl₂ · 6H₂O and MgBr₂ · 6H₂O) at [H₂O] = 2 × 10¹²−2 × 10¹⁵ cm⁻³ and NO₃ (4.8 × 10¹² cm⁻³) was studied using a reactor with a movable insert covered with a salt coating in combination with a mass spectrometer for monitoring the initial reactant and products. The probabilities of NO₃ uptake γ on X-NaCl binary salts as functions of the content of doping salt were determined. A parametric approximation of the experimental data was proposed, which makes it possible to quantitatively predict the extent of surface enrichment of a wetted binary salt coating in doping salt and its dependence on the humidity and the content of this salt in the binary mixture. It was established that the relative surface density σ_X of X doping salt depends on its mole fraction μ_X in the X-NaCl binary salt as σ_X = aμ_X (a = 2.2 for MgBr₂ and 13.1 for MgCl₂) over the entire humidity range covered. The contributions of the X salts to the overall uptake of NO₃ at NO₃ concentration typical of the tropospheric conditions ([NO₃] ∼ 10⁷ cm⁻³ and relative humidities of RH ≤ 20%) were estimated.     

Repetitive low-pressure volume discharge induced by attachment instability in an Ar/Cl<Subscript>2</Subscript> mixture

Ignition conditions and the characteristics of a repetitive volume discharge with a spherical anode and plane cathode are investigated. The discharge was ignited in Ar/Cl₂ mixtures (P≤2.0 kPa) used in excimer halogen lamps operating on the ArCl (B-X) 175-nm, Cl₂(D′-A′) 257-nm, and Cl ₂ ^** 195-to 200-nm molecular bands. At an interelectrode distance of 3 cm and a dc anode voltage of U _ch ≤1 kV, a stable repetitive pulsed discharge with a repetition rate of 1–50 kHz was ignited in chlorine or (0.1–2.0)/(0.04–0.12)-kPa Ar/Cl₂ mixtures. The development of attachment instability in the discharge plasma, in which the processes of the formation, decay, and diffusion of the Cl ₂ ⁻ and Cl⁻ negative ions play an important role, leads to the formation of a solitary pearlike plasma domain with an average diameter of 0.2–3.5 cm.     

Nonlinear plasma spectroscopy of the hydrogen balmer-α line

The plasma line broadening of H_α fine-structure lines is investigated with Doppler-free saturation and polarization spectroscopy in He-H gas and are discharges at plasma densities of 10⁸ cm^?3 <N?1.4×10¹⁴ cm^?3. With a single-mode laser, the shift and broadening of four resolved H_α fs lines are measured in a low pressure discharge forN<10¹¹ cm^?3. With an intense, broadband multi-mode laser the plasma effects of H_α are investigated up toN=1.4×10¹⁴ cm^?3 in a hollow cathode are. Calculations in the classical phase shift and impact approximations can explain the experimental data and peculiarities of the low-density plasma effects and show that the ions are the dominant perturbers. Ion dynamical effects, perturber mass and temperature dependence, are observed and interpreted. Applications of the nonlinear techniques to other H and D lines, other atoms, and for H and D plasma diagnostics are discussed.     

Absolute cross sections of electron attachment to molecular clusters. Part II: Formation of (H2O) N? , (N2O) N? , and (N2) N?

Absolute cross sections σ⁻(E, N) of electron attachment to clusters (H₂O) _N , (N₂O) _N , and (N₂) _N for varying electron energy E and cluster size N are measured by using crossed electron and cluster beams in a vacuum. Continua of σ⁻(E) are found that correlate well with the functions of electron impact excitation of molecules’ internal degrees of freedom. The electron is attached through its solvation in a cluster. In the formation of (H₂O) _N ⁻ , (N₂O) _N ⁻ , and (N₂) _N ⁻ , the curves σ⁻(N) have a well-defined threshold because of a rise in the electron thermalization and solvation probability with N. For (H₂O)₉₀₀, (N₂O)₃₅₀, and (N₂)₂₆₀ clusters at E = 0.2 eV, the energy losses by the slow electron in the cluster are estimated as 3.0 × 10⁷, 2.7 × 10⁷, and 6.0 × 10⁵ eV/m, respectively. It is found that the growth of σ⁻ with N is the fastest for (H₂O) _N and (N₂) _N clusters at E → 0 as a result of polarization capture of the s-electron. Specifically, at E = 0.1 eV and N = 260, σ⁻ = 3.0 × 10⁻¹³ cm² for H₂O clusters, 8.0 × 10⁻¹⁴ cm² for N₂O clusters, and 1.4 × 10⁻¹⁵ cm² for N₂ clusters; at E = 11 eV, σ⁻ = 9.0 × 10⁻¹⁶ cm² for (H₂O)₂₀₀ clusters, 2.4 × 10⁻¹⁴ cm² for (N₂O)₃₅₀ clusters, and 5.0 × 10⁻¹⁷ cm² for (N₂)₂₆₀ clusters; finally, at E = 30 eV, σ⁻ = 3.6 × 10⁻¹⁷ cm² for (N₂O)₁₀ clusters and 3.0 × 10⁻¹⁷ cm² for (N₂)₁₂₅ clusters. Original Russian Text ? A.A. Vostrikov, D.Yu. Dubov, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 12, pp. 1–15.     

Effect of high doses of N<Superscript>+</Superscript>, N<Superscript>+</Superscript> + Ni<Superscript>+</Superscript>, and Mo<Superscript>+</Superscript> + W<Superscript>+</Superscript> ions on the physicomechanical properties of TiNi

The surface layer of an equiatomic TiNi alloy, which exhibits the shape memory effect in the martensitic state, is modified with high-dose implantation of 65-keV N⁺ ions (the implantation dose is varied from 10¹⁷ to 10¹⁸ ions/cm²). TiNi samples are implanted by N⁺, Ni⁺-N⁺, and Mo⁺-W⁺ ions at a dose of 10¹⁷–10¹⁸ cm⁻² and studied by Rutherford backscattering, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction (glancing geometry), and by measuring the nanohardness and the elastic modulus. A Ni⁺ concentration peak is detected between two maxima in the depth profile of the N⁺ ion concentration. X-ray diffraction (glancing geometry) of TiNi samples implanted by Ni⁺ and N⁺ ions shows the formation of the TiNi (B2), TiN, and Ni₃N phases. In the initial state, the elastic modulus of the samples is E = 56 GPa at a hardness of H = 2.13 ± 0.30 GPa (at a depth of 150 nm). After double implantation by Ni⁺-N⁺ and W⁺-Mo⁺ ions, the hardness of the TiNi samples is ∼2.78 ± 0.95 GPa at a depth of 150 nm and 4.95 ± 2.25 GPa at a depth of 50 nm; the elastic modulus is 59 GPa. Annealing of the samples at 550°C leads to an increase in the hardness to 4.44 ± 1.45 GPa and a sharp increase in the elastic modulus to 236 ± 39 GPa. A correlation between the elemental composition, microstructure, shape memory effect, and mechanical properties of the near-surface layer in TiNi is found.     

EPR studies of Cu2+ and V4+ ions in phosphate glasses

Two lead-phosphate glass systems doped with both copper and vanadium ions in different ratios were studied by EPR (electron paramagnetic resonance) method. EPR spectra and parameters (g_‖ = 2.44, g_⊥ = 2.08 andA _‖ = 117.6 · 10⁻⁴ cm⁻¹) obtained for x(CuO · V₂O₅)(l−x)[2P₂O₅ · PbO] glasses withx ≤ 10 mol% suggest a tetrahedral (Td) coordination of Cu²⁺ ions and not a tetragonally elongated octahedron as has been assumed in previous works. The ground state of the paramagnetic electron is thed _xy copper orbital with a 4p_z contribution of 6%. For 20 ≤x ≤ 40 mol% a broad line (ΔB = 307 G) characteristic for clustered ions appears atg = 2.18. The V⁴⁺ ions are evidenced only in the spectra of x(CuO · 2V₂O₅)(1 −x)[2P₂O₅ · PbO] glasses and the resonance parameters suggest a pentacoordinated C_4v local symmetry for these ions. The hyperfine structures characteristic for Cu²⁺ and V⁴⁺ ions disappear for 10 ≤x ≤ 40 mol% due to the mixed exchange Cu²⁺−V⁴⁺ pair formation in these glasses.     

Generation of H− ions in a low-pressure xenon-hydrogen discharge. I

A theory of a low-pressure discharge in a xenon-molecular hydrogen mixture is developed. It is shown that, in such a discharge, at an interelectrode distance of L = 1 cm and a total plasma pressure of p ₀ ～ 1 Torr, the density of negative hydrogen ions produced via the dissociative attachment of thermal electrons to vibrationally excited molecules H₂ can reach a value as high as N_H ^? ≥ 10¹² cm^?3. According to calculations, the electron temperature in discharge operating regimes under study attains T _e ≈ 1?2 eV, which corresponds to the maximum of the e-v exchange rate constant of H₂ molecules. This ensures a relatively high rate of vibrational pumping of H₂ molecules in the discharge.     

Giant negative magnetoresistance in a nonmagnetic semiconductor

Studies of a classical III–V semiconductor (InSb) doped with 3d magnetic ions (Mn²⁺, having a localized spin S=55/2) reveal some unexpected transport properties. It is found that the transition from the metallic to the low-temperature insulator phase occurs at an impurity concentration N _Mn∼N _cr=2× 10¹⁷ cm⁻³ and a temperature T<T _cr∼1 K. Under these conditions a giant negative magnetoresistance arises. The experimental results can be explained in terms of the onset of a hard Mott-Hubbard gap Δ in the impurity band formed by the shallow manganese acceptor in InSb at N _Mn∼N _cr. A model describing the gap formation is proposed. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 5, 358–362 (10 March 1999) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Absolute density measurement of hydrogen atom in inductively coupled Ar/H2 plasmas using vacuum ultraviolet absorption spectroscopy

The absolute density measurement of atomic species such as hydrogen is crucial for plasma processing because of their strong chemical reactivity. In this work, to measure the hydrogen atom density in Ar/H₂ inductively coupled plasmas (ICP), the self-absorption-applied vacuum ultraviolet absorption spectroscopy (VUVAS) is studied with a micro-hollow cathode H₂/He discharge lamp (MHCL) emitting VUV light (Lyman alpha line; L_α 121.56 nm). The absolute density of hydrogen atoms in the ICP is investigated for various powers (50 W–850 W) in the low pressure region (30 mTorr–50 mTorr). The hydrogen density in remote plasma region is shown to vary from 2.1 × 10¹¹ cm⁻³ to 1.25 × 10¹² cm⁻³ with respect to plasma power.     

EPR and optical absorption studies of Cu<Superscript>2+</Superscript> ions in [ZnPd(CN)<Subscript>4</Subscript>(C<Subscript>4</Subscript>H<Subscript>12</Subscript>N<Subscript>2</Subscript>O<Subscript>2</Subscript>)] single crystals

A Cu²⁺-doped single crystal of catena-trans-bis(N-(2-hydroxyethyl)-ethylenediamine) zinc(II)-tetra-m-cyanopaladate(II) [ZnPd(CN)₄(C₄H₁₂N₂O₂)] complex has been investigated by electron paramagnetic resonance (EPR) technique at room temperature. EPR spectra indicate that Cu²⁺ ions substitute for magnetically equivalent Zn²⁺ ions and form octahedral complexes in [ZnPd(CN)₄(C₄H₁₂N₂O₂)] hosts. The crystal field affecting the Cu²⁺ ion is nearly axial. The optical absorption studies show two bands at 322 nm (30864 cm⁻¹) and 634 nm (15337 cm⁻¹) which confirm the axial symmetry. The spin Hamiltonian parameters and the relevant wave function are determined.     

Hydrogen diffusion constants in stainless steel and Pd60Ag40 alloy, and permeability of diaphragms made of these metals

Hydrogen permeability through diaphragms made of 12X18H12T stainless steel and Pd₆₀Ag₄₀ alloy under electrolytic hydrogen saturation has been studied with an electrolytic cell with a vacuum chamber. Hydrogen diffusion constants D _H = 3.86 × 10⁻¹⁰ cm² s⁻¹ for stainless steel and D _H = 4.36 × 10⁻⁸ cm² s⁻¹ for Pd₆₀Ag₄₀ alloy have been determined at a temperature of 40°C using the Berrer relations.     

Aerosol deposition of detonation nanodiamonds used as nucleation centers for the growth of nanocrystalline diamond films and isolated particles

The aerosol deposition of detonation nanodiamonds (DNDs) on a silicon substrate is comprehensively studied, and the possibility of subsequent growth of nanocrystalline diamond films and isolated particles on substrates coated with DNDs is demonstrated. It is shown that a change in the deposition time and the weight concentration of DNDs in a suspension in the range 0.001–1% results in a change in the shape of DND agglomerates and their number per unit substrate surface area N _s from 10⁸ to 10¹¹ cm⁻². Submicron isolated diamond particles are grown on a substrate coated with DND agglomerates at N _s ≈ 108 cm⁻² using microwave plasma-enhanced chemical vapor deposition. At N _s ≈ 10¹⁰ cm⁻², thin (∼100 nm) nanodiamond films with a root-mean-square surface roughness less than 15 nm are grown.     

Quantum oscillations of the resistivity and hall coefficient and the quantum limit in Bi<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript> alloys in a magnetic field along the trigonal axis

The dependences of the electrical resistivity ρ and the Hall coefficient R on the magnetic field have been measured for single-crystal samples of the n-Bi_0.93Sb_0.07 semiconductor alloys with electron concentrations in the range 1 × 10¹⁶ cm⁻³ < n < 2 × 10¹⁸ cm⁻³. It has been found that the measured dependences exhibit Shubnikov-de Haas quantum oscillations. The magnetic fields corresponding to the maxima of the quantum oscillations of the electrical resistivity are in good agreement with the calculated values of the magnetic fields in which the Landau quantum level with the number N intersects the Fermi level. The quantum oscillations of the Hall coefficient with small numbers are characterized by a significant spin splitting. In a magnetic field directed along the trigonal axis, the quantum oscillations of the resistivity ρ and the Hall coefficient R are associated with electrons of the three-valley semiconductor and are in phase with the magnetic field. In the case of a magnetic field directed parallel to the binary axis, the quantum oscillations associated both with electrons of the secondary ellipsoids in weaker magnetic fields and with electrons of the main ellipsoid in strong magnetic fields (after the overflow of electrons from the secondary ellipsoids to the main ellipsoid) are also in phase. In magnetic fields of the quantum limit ħω _c /2 ≥ E _F, the electrical conductivity increases with an increase in the magnetic field: σ₂₂(H) ∼ H ^k . A theoretical evaluation of the exponent in this expression for a nonparabolic semiconductor leads to values of k close to the experimental values in the range 4 ≤ k ≤ 4.6, which were obtained for samples of the semiconductor alloys with different electron concentrations. A further increase in the magnetic field results in a decrease of the exponent k and in the transition to the inequality σ₂₂(H) ≤ σ₂₁(H).