N型4H-SiC低温拉曼光谱特性

利用拉曼散射技术对N型4H-SiC单晶材料进行了30～300 K温度范围的光谱测量。实验结果表明,随着温度的升高,N型4H-SiC单晶材料的拉曼峰峰位向低波数方向移动,峰宽逐渐增宽。分析认为,晶格振动随着温度的升高而随之加剧,其振动恢复力会逐渐减小,使振动频率降低;原子相对运动会随温度的升高而加剧,使得原子之间及晶胞之间的相互作用减弱,致使声学模和光学模皆出现红移现象。随着温度的升高,峰宽逐渐增宽。这是由于随着温度的升高声子数逐渐增加,增加的声子进一步增加了散射概率,从而降低了声子的平均寿命,而声子的平均寿命与峰宽成反比,因此随着温度的升高峰宽逐渐增宽。声子模强度随温度升高呈现不同规律,E₂(LA),E₂(TA),E₁(TA)和A₁(LA)声子模随着温度升高强度单调增加,而E₂(TO),E₁(TO)和A₁(LO)声子模强度出现了先增后减的明显变化,在138 K强度出现极大值。分析认为造成原因是由于当温度高于138 K时,高能量的声子分裂成多个具有更低能量的声子所致。     

拉曼光谱研究n型4H-和6H-SiC晶体的载流子浓度

半导体材料的纵光学声子与等离子体激元耦合模(LOPC模)能够提供材料电学方面的相关信息。本文在室温下测得了n型4H-和6H-SiC的拉曼光谱,分析了掺入的杂质对于SiC晶体拉曼光谱的影响,通过拟合n型4H-和6H-SiC晶体的LOPC模的线型得到等离子体频率,并由此从理论上计算了载流子浓度。载流子浓度的理论计算值与霍尔测量的结果符合得很好。研究结果进一步证实了对于n型4H-和6H-SiC晶体,可以通过分析LOPC模的线形来较准确地给出相关材料的载流子浓度。     

Effect of 6H-SiC （1120） substrate on epitaxial graphene revealed by Raman scattering

A nonpolar SiC(1120) substrate has been used to fabricate epitaxial graphene (EG). Two EGs with layer numbers of 8-10 (referred to as MLG) and 2-3 (referred to as FLG) were used as representative to study the substrate effect on EG through temperature dependent Raman scattering. It is found that Raman lineshifts of G and 2D peaks of the MLG with temperature are consistent with that of a free graphene predicted by theory calculation, indicating that the substrate influence on the MLG is undetectable. While Raman G peak lineshifts of the FLG to that of the free graphene are obvious, however, its lineshift rate (-0.016 cm^-1/K) is almost one third of that (-0.043 cm^-1/K) of a EG on 6H-SiC (0001) in the temperature range from 300 K to 400 K, indicating a weak substrate effect from SiC (1120) on the FLG. This renders the FLG a high mobility around 1812 cm²- ·V^-1-·s^-1 at room temperature even with a very high carrier concentration about 2.95× 10¹³ cm^-2 (p-type). These suggest SiC (1120) is more suitable for fabricating EG with high performance.     

Investigation of micropipes in 6H-SiC by Raman scattering

The spectra of 6H-SiC crystals including micropipes have been examined for the Si face using Raman scattering. The first-order Raman features reveal that the intensity of the transverse optical phonon band centered at ∼796 cm⁻¹ is sensitive to the micropipes. And the second-order Raman features of the micropipes in bulk 6H-SiC are well-defined using the selection rules for second-order scattering in wurtzite structure. It is found that there are some second-order peaks missing for the micropipe-including sample, which may be induced by the reduction of the incident laser intensity at around the micropipe, especially the uneven surface in the inner wall of the micropipe. These features might also be employed to characterize other structural defects such as screw-dislocations and threading edge dislocations.     

尺寸相关的CdS纳米颗粒的拉曼散射特性

采用反胶束法,合成了具有不同尺寸的CdS纳米颗粒。利用透射电镜(TEM)和高分辨透射电镜(HR-TEM)以及紫外-可见光吸收谱(UV/vis)对这些纳米颗粒的结构特性进行了表征和分析。利用拉曼光谱仪测量了这些具有不同尺寸的CdS纳米颗粒的拉曼特性。研究结果表明：当纳米颗粒尺寸小于一定值时,拉曼峰出现了蓝移,大于一定值时出现了红移,这些不同的结果是与纳米颗粒的尺寸效应以及纳米颗粒结构中具有各向异性的电子－声子耦合作用有关。     

Nitridation of the SiO2/4H-SiC interface studied by surface-enhanced Raman spectroscopy

We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO₂/4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.     

Defects in crystals studied by Raman scattering

Raman studies of crystal defects are reviewed. Raman spectroscopy is a powerful technique and has been used widely for investigating disordered structures. The degree of disorder in a crystal is quantitatively evaluated in terms of the phonon correlation length. The asymmetric Raman line shapes in defective crystals such as microcrystals, ion-implanted semiconductors are well reproduced by the spatial correlation (SC) model. The effect of alloying induced-potential fluctuations on Raman scattering is also explained within the framework of the SC model. In disordered graphite, the in-plane phonon correlation length is obtained from the relative intensity ratio of the disorder induced peak. The initial lattice disordering rates and the relaxation rates of disorder are determined, using real-time Raman measurements during ion irradiation in a scale of seconds. In this way, the phonon confinement due to the local defects is observed in the kinetic manner. Localized vibrational modes of defects in crystals are also described. In particular, Raman observation of the hydrogen molecule in crystalline semiconductors is discussed in detail.     

4H-SiC中基面位错发光特性研究

本文利用阴极荧光(CL)和选择性刻蚀的方法对4H-SiC同质外延材料中基面位错的发光特性进行了研究. 结果表明螺型基面位错(B_TSD)和混合型基面位错(B_MD)分别具有绿光和蓝绿光特性,其发光峰分别在530 nm附近和480 nm附近. 从测试结果中还发现B_MD 的发光位较B_TSD有所蓝移,分析认为B_TSD位错芯附近原子沿伯格斯 关键词： 4H-SiC 基面位错 发光特性 禁带宽度     

Bismuth-content-dependent polarized Raman spectrum of InPBi alloy

We systematically investigate the optical properties of the InP_(1-x)Bi_x ternary alloys with 0≤x≤2.46%,by using high resolution polarized Raman scattering measurement.Both InP-like and InBi-like optical vibration modes(LO) are identified in all the samples,suggesting that most of the Bi-atoms are incorporated into the lattice sites to substitute Patoms.And the intensity of the InBi-like Raman mode is positively proportional to the Bi-content.Linear red-shift of the InP-like longitudinal optical vibration mode is observed to be 1.1 cm~(-1)/Bi%,while that of the InP-like optical vibration overtone(2LO) is nearly doubled.In addition,through comparing the(XX) and Z(XY) Raman spectra,longitudinaloptical-plasmon-coupled(LOPC) modes are identified in all the samples,and their intensities are found to be proportional to the electron concentrations.     

KDP晶体受激拉曼散射特性

详细比较了磷酸二氢钾(KDP)晶体的自发拉曼散射和受激拉曼散射光谱,在受激拉曼散射(SRS)中观察到了自发拉曼散射中最强的振动模的三阶Stokes光(559.43,589.74,623.50nm),由于其他振动模的受激拉曼散射增益系数较小,其SRS光谱未观察到。另外,比较了传统生长的未退火和退火后的KDP晶体及快速生长的锥区和柱区KDP晶体的受激拉曼散射增益系数,结果表明生长方法和热退火对KDP晶体的受激拉曼散射增益系数无明显影响。     

KDP晶体受激拉曼散射特性

详细比较了磷酸二氢钾(KDP)晶体的自发拉曼散射和受激拉曼散射光谱,在受激拉曼散射(SRS)中观察到了自发拉曼散射中最强的振动模的三阶Stokes 光(559.43, 589.74, 623.50 nm),由于其他振动模的受激拉曼散射增益系数较小,其SRS光谱未观察到。另外,比较了传统生长的未退火和退火后的KDP晶体及快速生长的锥区和柱区KDP晶体的受激拉曼散射增益系数,结果表明生长方法和热退火对KDP晶体的受激拉曼散射增益系数无明显影响。     

Raman analysis of defects in n-type 4H-SiC

This paper employs micro-Raman technique for detailed analysis of the defects (both inside and outside) in bulk 4H-SiC. The main peaks of the first-order Raman spectrum obtained in the centre of defect agree well with those of perfect bulk 4H-SiC, which indicate that there is no parasitic polytype in the round pit and the hexagonal defect. Four electronic Raman scattering peaks from nitrogen defect levels are observed in the round pit (395\,cm$^{-1}$, 526\,cm$^{-1}$, 572\,cm$^{-1}$, and 635\,cm$^{-1})$, but cannot be found in the spectra of hexagonal defect. The theoretical analysis of the longitudinal optical plasmon--phonon coupled mode line shape indicates the nonuniformity of nitrogen distribution between the hexagonal defect and the outer area in 4H-SiC. The second-order Raman features of the defects in bulk 4H-SiC are well-defined using the selection rules for second-order scattering in wurtzite structure and compared with that in the free defect zone.     

One phonon resonant Raman scattering in a quantized spherical film

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with surface optical (SO) phonon modes in a semiconductor quantized spherical film. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. We study the selection rules for the processes. Singularities are found to be size-dependent and by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectrum. A discussion of the phonon behavior for the films with large and small size is presented. The numerical results are also compared with that of experiments.     

KDP晶体拉曼散射角度特性

利用群理论详细分析了磷酸二氢钾(KDP)晶体的拉曼振动模式,得出了其拉曼振动模的归类。并采用拉曼光谱仪测量了Z切退火KDP晶体X(ZZ)珡X,Z(XY)珚Z和Y(XY)X三种散射配置和未退火KDP晶体Z(XY)珚Z配置下的拉曼光谱。根据拉曼选择定则得出X(ZZ)珡X,Z(XY)珚Z和Y(XY)X散射配置下的拉曼峰分别对应A1,B2(LO),B2(TO)对称类振动模,但在Z(XY)珚Z配置下的拉曼光谱中除了B2模,还观察到了A1模,而在Y(XY)X配置下的拉曼光谱中只有B2模,且退火和未退火晶体Z(XY)珚Z配置下的拉曼光谱无明显差别,此结果表明KDP晶体的对称性降低,在背向散射时A1模也具有角度特性,但与晶体的内应力无关,这是由KDP晶体内部结构决定的。     

4H-SiC n-MOSFET的高温特性分析

通过考虑迁移率和阈值电压随温度的变化关系，模拟分析了4H-SiC n-MOSFET高温下的电学 特性，模拟结果与实验有较好的符合.并进一步讨论了主要结构参数和工艺参数对高温电特 性的影响及其最佳取值. 关键词： n-MOSFET 4H-SiC 迁移率 阈值电压     

Surface optical phonon—assisted electron Raman scattering in a semiconductor quantum disc

We have carried out a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the surface optical phonon modes in a semiconductor quantum disc.electron states are considered to be confined within a quantum disc with infinite potential barriers.The optical phonon modes we have adopted are the slab phonon modes by taking into consideration the Frohlich interaction between an electron and a phonon.The selection rules for the Raman process are given.Numerical results and a discussion are also presented for various radii and thicknesses of the disc,and different incident radiation energies.     

Mo掺杂4H-SiC的磁性和光学性能的第一性原理研究

基于第一性原理密度泛函理论（DFT）的广义梯度近似（GGA）的平面波赝势法（PBE）,计算了4H-SiC的本征体系、过渡金属元素Mo单掺杂4H-SiC体系的电子结构、磁性和光学特性。结果表明：Mo掺杂将导致4H-SiC由本征非磁性变为p型磁性半导体材料,其带隙值由2.88 eV 变为0.55 eV。当Mo掺杂浓度为1.359×1021 cm-3时,磁矩为0.98 ,这表明掺Mo后的4H-SiC材料可以作为自旋电子元器件的备选材料。此外,Mo掺杂4H-SiC体系在（100）和（001）方向的静态介电常数分别为3.780和3.969。介质函数虚部不为0的起始点发生红移,表明掺杂使电子更容易跃迁。     

4H-SiC肖特基二极管的电荷收集特性

针对极端环境下耐辐照半导体核探测器的研制需求,采用耐高温、耐辐照的4H碳化硅(4H-SiC)宽禁带材料制成肖特基二极管,研究了该探测器对241Am源粒子的电荷收集效率。从电容-电压曲线得出该二极管外延层净掺杂数密度为1.991015/cm3。从正向电流-电压曲线获得该二极管肖特基势垒高度为1.66 eV,理想因子为1.07,表明该探测器具备良好的热电子发射特性。在反向偏压高达700 V时,该二极管未击穿,其漏电流仅为21 nA,具有较高的击穿电压。在反向偏压为0~350 V范围内研究了该探测器对3.5 MeV 粒子电荷收集效率,在0 V时为48.7%,在150 V时为99.4%,表明该探测器具有良好的电荷收集特性。     

Temperature‐dependent Raman scattering study of multiferroic MnWO4

We have measured polarized Raman spectra of MnWO₄ single crystals at low temperatures, and studied the temperature dependence of the various phonon modes. From our Raman studies of the MnWO₄, a new transition temperature, ∼180 K, was found. We have completely assigned the symmetries of the 18 observed Raman modes of the MnWO₄, as expected from a group theoretical analysis. These Raman modes have been classified into three groups according to weak, intermediate and strong temperature dependence of the modes in each group. Six internal modes have been identified by their weak temperature dependence of the Raman wavenumbers. The temperature dependence of the wavenumbers of the B_g modes in Mg O bonds, modes of intermediate temperature dependence group, shows an anomalous behavior under 50 K. The phonon modes of strong temperature dependence show an anomalous change at ∼180 K in the linewidths. This is believed to be a new transition temperature which involves the changes in the inter‐WO₆ octahedra structure. Copyright © 2009 John Wiley & Sons, Ltd.     

Stimulated Raman scattering and spontaneous Raman solitons in ammonia

In this study we report the first observation of spontaneous Raman solitons in stimulated Raman scattering (SRS) by the gas NH₃. The scattered radiation is called Stokes radiation. Raman solitons are of considerable interest, because their existence can be explained by quantum-mechanical fluctuations of the electromagnetic field in vacuum. We have observed spontaneous Raman solitons in a forward SRS configuration for two different molecular transitions of NH₃, the laser emissions at 58 μm and 72.6 μm wavelength. These are optically pumped by 10 μm CO₂-laser pulses with a duration of 100 ns and an energy of 150 mJ. Spontaneous Raman solitons are short spikes in the pump pulse which occur during its depletion. Their origin is the rapid π phase change of the Stokes seed. In contrast to other laboratories we have used single-pass cells. Thus, we have succeeded in observing multiple spontaneous Raman solitons during one pump pulse. Previous experiments with multi-pass cells never showed multiple solitons. Since multiple spontaneous Raman solitons have already been reported in an earlier experiment with a single-pass cell filled with hydrogen at high pressure, we conclude that such multiple Raman solitons can be observed mainly in this type of gas cell. Subsequently, we have performed statistical measurements on the delay time and the height of the spontaneous Raman solitons in the depleted pump pulse for the 58 μm-NH₃ emission. We have compared these statistics with theory and equivalent experimental results of other laboratories. They are in good agreement with the assumption that quantum-mechanical fluctuations are the origin of spontaneous Raman solitons. The most recent theories postulate that the origin of the formation of spontaneous Raman solitons can be explained by the rapid π phase change of the Stokes seed as well as that of the laser or polarization wave. Therefore, we have determined the phase of the spontaneous Raman solitons relative to the depleted pump pulse. Although, such changes of sign of the relative phase have already been observed in an earlier SRS experiment with hydrogen at high pressure, we did not detect any in our experiment. Therefore, we conclude that in this experiment the π phase change occurs in the Stokes or polarization wave.