Diode-pumped passively Q-switched Nd:GdVO4 lasers operating at 1.06 μm wavelength

With a 10-W diode laser to pump Nd:GdVO₄ crystal in a folded cavity, we demonstrated Cr⁴⁺:YAG passively Q-switched Nd:GdVO₄ lasers at 1.06 μm. The maximum average output power of 2.1 W and the highest peak power of 625 W were, respectively, obtained when the initial transmissions of the Cr⁴⁺:YAG crystals were 90% and 80%. Received: 8 September 1999 / Revised version: 30 December 1999 / Published online: 8 March 2000     

Cr4+:YAG as passive Q-switch for a Nd:YALO oscillator with an average repetition rate of 2.7 kHz,TEM00 mode and 13 W output

A conventional pulsed Nd:YALO oscillator was passively Q-switched with a Cr⁴⁺:YAG crystal. During each of the flashes, with a repetition rate of 100 Hz, a burst of 27 Q-switch pulses with a half width (FWHM) of 140 ns was generated. The minimal pulse-to-pulse time interval within the burst was about 5 µs. The average repetition rate of these Q-switch pulses was 27 × 100 Hz. Nd: YALO as active material does not show any thermally induced birefringence and therefore a good TEM₀₀ mode was realized despite the high thermal load of the crystal. The 4 × 79 mm laser rod produced 13 W average output power at 1080 nm with an efficiency of 0.5%. In contrast to earlier used LiF:F ₂ ^– absorbers as passive Q-switch the Cr⁴⁺:YAG-crystals did not bleach and therefore the system operated very stable and reliable.     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.     

Specialty Yb fiber amplifier for microchip Nd laser: Towards ∼1-mJ/1-ns output at kHz-range repetition rate

We demonstrate and optimize, for a mJ/ns release at the wavelength 1.064 μm, the operation of a compact laser system designed in the form of a hybrid, active-passive, Q-switched Nd³⁺:YAG/Cr⁴⁺:YAG microchip laser seeding an Yb-doped specialty multi-port fiber amplifier. As the result of the amplifier optimization, ∼1 mJ, ∼1 ns, almost single-mode pulses at a 1-10-kHz repetition rate are achieved, given by a gain factor of ∼19 dB for an 11-μJ input from the microchip laser. Meanwhile, a lower pulse energy, ∼120 μJ, but a much higher gain (∼25 dB) are eligible for the less powerful (0.35 μJ) input pulses.     

Q-switched and continuous-wave mode-locking of a diode-pumped Nd:Gd0.64Y0.36VO4−Cr4+:YAG laser

We report on a diode-pumped passively mode-locked Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. Q-switched mode locking (QML) with 90% modulation depth was obtained. The peak power of the mode-locked pulse near the maximum of the Q-switched envelope was estimated to be about 1.7 MW at the pump power of 12 W. Besides QML, continuous-wave mode locking was also experimentally realized, for the first time to our knowledge, in the laser under a strong intracavity pulse energy fluence. The mode-locked pulse width is about 2.96 ps at a repetition rate of 161.3 MHz.     

Control of the pulse duration in one- and two-axis passively Q-switched solid-state lasers

We study theoretically and experimentally different methods to control the pulses emitted by solid-state lasers passively Q-switched by a saturable absorber. We explore one- and two-axis laser schemes allowing to control the pulse duration, which is ruled by the saturation powers of the transitions in the absorber and in the gain medium. In one-axis lasers, it is shown that the adjustment of the pump and laser beam sizes in the active medium and in the absorber provides an efficient means to control the pulse temporal shape and duration. Furthermore, a two-axis laser cavity supporting so-called forked-eigenstate operation permits to freely adjust the parts of the mode power which circulate in the gain medium and in the absorber. In this case, a lengthening of the pulse duration up to 500 ns is obtained with an increase of the average output power. The theoretical results obtained by using rate equations adapted to each cavity geometry are in close agreement with experiments performed on a diode-pumped Nd³⁺:YAG laser Q-switched by a Cr⁴⁺:YAG saturable absorber. The relevance of the different techniques to control the pulse durations in the framework of potential applications is discussed. Received 3 December 2001     

Numerical Modelling of QCW-Pumped Passively Q-Switched Nd：YAG Lasers with Cr^4＋：yAG as Saturable Absorber

Passively Q-switched quasi-continuous-wave （QCW） diode-pumped Nd：YAG laser with Cr^4＋ ：YAG as saturable absorber is numerically investigated by solving the coupled rate equations. The threshold pump rate for passively Q-switched QCW-pumped laser is derived. The effects of the pump rate and pump-pulse duration on the laser operation characteristics are studied theoretically. The pump power range can be estimated according to the number of output pulses. The numerical simulation results are in good agreement with the experimental results.     

Efficient passively Q-switched operation of a diode-pumped Nd:GGG laser with a Cr:YAG saturable absorber

The continuous-wave (cw) and passive Q-switching operation of a diode-end-pumped gadolinium gallium garnet doped with neodymium (Nd:GGG) laser at 1062 nm was realized. A maximum cw output power of 6.9 W was obtained. The corresponding optical conversion efficiency was 50.9%, and the slope efficiency was determined to be 51.4%. By using Cr⁴⁺:YAG crystals as saturable absorbers, Q-switching pulse with average output power of 1.28 W, pulse width of 4 ns and repetition rate of 6.2 kHz were obtained. The single-pulse energy and peak power were estimated to be 206 μJ and 51.6 kW, respectively. The conversion efficiency of the output power from cw to Q-switching operation was as high as 84.7%.     

Pulse compression in AO Q-switched diode-pumped Nd:GdVO4 laser with Cr4+:YAG saturable absorber

By simultaneously using both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber in the cavity, for the first time, a diode-pumped doubly Q-switched Nd:GdVO₄ laser has been realized. The pulse duration is obviously compressed in contrast to the actively acoustic-optic Q-switched laser. By considering the Gaussian transversal distribution of the intracavity photon density and the longitudinal distribution of the photon density along the cavity axis as well as the influence of turnoff time of the acoustic-optic (AO) Q-switch, we provide the coupled rate equations for a diode-pumped doubly Q-switched Nd:GdVO₄ laser with both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber. These coupled rate equations are solved numerically, and the dependence of pulse width, pulse energy and peak power on the incident pump power at different pulse repetition rates is obtained. The numerical solutions of equations agree well with the experimental results.This revised version was published online in August 2005 with a corrected cover date.     

High efficiency TEM00 mode, diode-pumped, conduction-cooled, Nd:YAG zig-zag slab laser

We report a compact, conduction-cooled, highly efficient, continuous wave (CW) Nd:YAG slab laser in diode-side-pumped geometry. To achieve high efficiency, a novel laser head for Nd:YAG slab has been developed. For an absorbed pump power of 27.6 W, maximum output power of 10.4 W in multimode and 8.2 W in near-diffraction-limited beam quality has been obtained. Slope and optical-to-optical conversion efficiencies are 45.3% and 37.7% in multimode with beam quality factors (M²) in x and y directions equal to 32 and 8, respectively. TEM₀₀ mode operation was achieved in a hybrid resonator with slope and optical-to-optical conversion efficiencies of 43.2% and 29.7%, respectively. Beam quality factors in x and y directions are ?1.5 and ?1.6 for the whole output power range. The laser radiation was linearly polarized and polarization contrast ratios are >1200:1 in the multimode and 1800:1 in the TEM₀₀ mode operation. In passive Q-switching with Cr⁴⁺:YAG crystal of 68% initial transmission, 18 ns pulsewidth has been achieved with an average power of 2 W at a repetition rate of 16 kHz.     

Q-switched Nd lasers pumped directly into the F3/2 emitting level

The influence of the direct pumping into the ⁴F_3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr⁴⁺:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing ⁴F_5/2 level to 0.88 μm into the ⁴F_3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.     

Intermittent oscillation of 1064 nm and 1342 nm obtained in?a?diode-pumped doubly passively Q-switched Nd:YVO4 laser

The intermittent oscillation of 1064 nm and 1342 nm was demonstrated in a diode-pumped doubly passively Q-switched Nd:YVO₄/Cr⁴⁺:YAG/V³⁺:YAG laser for the first time to our best knowledge. By exploiting a three-mirror configuration and choosing appropriate reflectivity values for the two wavelengths on the output couplers, the dual-wavelength pulsed operation was obtained. The maximum dual-wavelength average output power was 428 mW, corresponding to an optical-to-optical conversion efficiency of 8.5%. The corresponding physical explanations for the intermittent oscillation as well as the related phenomena are also given in this paper.     

Sub-nanosecond microchip laser with intracavity Raman conversion

Efficient sub-nanosecond pulse operation of microchip lasers with intracavity Raman conversion and pulse compression is presented for the first time. The microchip lasers were composed of Nd:LSB or Nd:YAG laser crystals, Cr⁴⁺:YAG saturable absorber, and Ba(NO₃)₂ Raman medium. The pulse duration obtained at the Stokes wavelength (1196 nm) was as short as 118 ps. Optical conversion efficiency of laser-diode pump power to the Stokes power of 8% was reached. Pulse energy and peak power of Stokes emission were 1.2 μJ and 5.4 kW, correspondingly. Numerical calculations are in good agreement with obtained experimental results. Received: 20 December 2002 / Revised version: 6 March 2003 / Published online: 5 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-716/645-6945, E-mail: ankuzmin@acsu.buffalo.edu RID="**" ID="**"Present address: University at Buffalo, SUNY, The Institute for Lasers, Photonics, and Biophotonics, 458 NSC, Buffalo, NY 14 260-3000, USA     

Laser-diode-pumped Cr4+, Nd3+:YAG self-Q-switched laser with high repetition rate and high stability

A diode end-pumped self Q-switched Cr⁴⁺, Nd³⁺: YAG laser was established with 30-ns pulse width (FWHM) and 0.5-μJ pulse energy output. In normal pulse pumping operation, the lasing threshold changed greatly from 122 mJ to 2.4 mJ as the pump pulse frequency varied from 1 Hz to 500 Hz due to pumping-induced thermal effect. A pre-pumping method was proposed and the change of the lasing threshold was reduced; programmable Q-pulse output with maximum frequency of 16 kHz and high stability was achieved. Received: 16 January 2001 / Revised version: 21 May 2001 / Published online: 19 September 2001     

Q-switched Yb 3+ :YVO 4 laser with Raman self-conversion

We report the efficient continuous-wave (CW) and Q-switched laser operation of a diode-pumped Yb:YVO₄ laser. A CW output power of 1 W with a slope efficiency of 59% with respect to absorbed pump power was demonstrated. Passively Q-switched with a Cr⁴⁺:YAG saturable absorber, a Yb:YVO₄ laser with Raman conversion was demonstrated. Q-switched 18.7- J pulses with a pulse duration of 17 ns and a peak power up to 1 kW were obtained at 1018-nm fundamental wavelength and 3.6- J pulses with a pulse duration of 6 ns and a peak power of about 0.6 kW were obtained at 1119.5-nm first-Stokes wavelength.This revised version was published online in March 2005. In the previous version, the published online date was missing     

Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber

Spectroscopic data of a V³⁺:YAG passive Q-switch crystal were measured. The absorption recovery time was determined to be of 37±7 ns and the ground state absorption cross section was estimated to be 0.7×10^-18 cm² at 1.44 μm and 3.5×10^-18 cm² at 1.34 μm. Passively Q-switched operation of diode pumped 1.44 μm and 1.3 μm Nd:YAG lasers was demonstrated using this crystal as saturable absorber. Average output powers of 1.42 W (1.44 μm) and 1.56 W (1.34 μm) and pulse energies of 24 μJ (1.44 μm) and 25 μJ (1.34 μm) were observed, respectively. Received: 19 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-40/42838-6281, E-mail: kretschmann@physnet.uni-hamburg.de     

Self-Q-switched and mode-locked Nd,Cr:YAG laser with 6.52-W average output power

Simultaneous self-Q-switched and mode-locked have been demonstrated in a diode-pumped Nd,Cr:YAG laser. For the first time as we know, almost 100% modulation depth has been achieved at an intracavity intensity of 5.6 × 10⁵ W/cm². The maximum average output power of 6.52 W corresponding to a slope efficiency of 30% is obtained at 1064 nm. The laser produces high-quality pulses in a TEM₀₀-mode at the pump power of 16.5 W. The pulse duration of the mode-locked pulses is about 600 ps with 136 MHz repetition rate.     

Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror

We report on a diode pumped passively Q-switched Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.     

Instability and satellite pulse of passively Q-switching Nd:LuVO4 laser with Cr:YAG saturable absorber

This work presents experimental results concerning a passively Q-switching Nd:LuVO₄ laser with a Cr⁴⁺:YAG saturable absorber operated in a three-element cavity. When the pump power exceeded 5.47 W, the system transfers stable pulse train into spatial-temporal instability. Furthermore, the chaotic pulse train accompanied the generation of a satellite pulse. The experimental results reveal that the mechanisms of instability and generation of the satellite pulse are governed by the multitransverse mode competition.     

A microchip-laser-pumped DFB-polymer-dye laser

A miniaturized, high repetition rate, picosecond all solid state photo-induced distributed feedback (DFB) polymer-dye laser is described by applying a passively Q-switched and frequency-doubled Cr⁴⁺:Nd³⁺:YAG-microchip laser (pulse width Δτ=540 ps, repetition rate ν=3 kHz, pump energy E_pump=0.15 μJ) as a pump source. A poly-methylmethacrylate film doped with rhodamine B dye serves as active medium. The DFB-laser pulses are temporally and spectrally characterized, and the stability of the thin polymer/dye film at high repetition rates is analyzed. The shortest DFB-laser pulses obtained have a duration of 11 ps. After the emission of 350000 pulses the intensity of the DFB-laser output has decreased by a factor of two and the pulse duration has increased by a factor of 1.2. For single DFB-laser pulses of 20-ps duration the spectral bandwidth is measured to be Δλ=0.03 nm, which is only 0.005 nm above the calculated Fourier limit assuming a Gaussian profile for the temporal shape of the pulses. Coarse wavelength tuning of the DFB laser between 590 and 619 nm is done by turning the prism. Additionally, a fine tuning of the DFB-polymer-laser wavelength is achieved by changing the temperature of the polymer/dye layer (=-0.05 nm/°C) in the range from 20 to 40 °C. Received: 1 March 2001 / Revised version: 23 May 2001 / Published online: 18 July 2001