Intervalley electron scattering by phonons in (GaAs)<Subscript><Emphasis Type="Italic">m</Emphasis></Subscript>(AlAs)<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>(001) ultrathin superlattices

The electron scattering by short-wavelength and long-wavelength phonons in (GaAs) _m (AlAs) _n (001) superlattices with ultrathin layers (n, m = 1, 2, 3) has been investigated using the pseudopotential method and the phenomenological model of bonding forces. The deformation potentials have been found for intervalley electron transitions in the conduction bands of the superlattices and solid solutions of the corresponding compositions. It has been shown that, owing to the localization of the wave functions in the quantum wells Γ, L, and X, the intensity of intervalley electron transitions in the superlattices, as a whole, is higher than that of similar transitions in the solid solutions. As the content of light Al atoms in the superlattices increases, the deformation potentials monotonically increase for the X-X transitions and decrease for the L-L and X-L transitions. The potentials of the Γ-X and Γ-L transitions change nonmonotonically depending on the layer thickness due to the pronounced quantum-well effects in the deep Γ quantum wells of GaAs. The deformation potentials averaged over phonons and related valleys in the superlattices are close to the corresponding potentials in the solid solutions.     

Ab initio calculations of the deformation potentials for intervalley phonon-assisted transitions in АIIIВV crystals with sphalerite structure

Completely self-consistent ab initio calculations of scattering of electrons between the lowest minima of the conduction band by short-wavelength phonons are performed for the first time for a group of А ^III В ^V semiconductor crystals. The structure constants, electron and vibrational spectra, and probabilities of scattering are calculated for the crystals from unified positions within the electronic density functional method. The theory does not involve any phenomenological assumptions on positions of minima in the conduction band, effective carrier masses, interatomic forces, or scattering probabilities. The electron-phonon coupling constants (the deformation potentials) for actual Γ−X, Γ−L, and X−L transitions for scattering between the nonequivalent X−X and L−L valleys in the conduction bands of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb crystals with sphalerite structure are calculated. Results obtained are compared with theoretical calculations within the phenomenological rigid ion model and with those performed by the selfconsistent frozen phonon method.     

Electron tunneling in the GaAs/AlAs(111) structures with a smooth potential at heteroboundaries

The effect of smooth interface potential on the electron tunneling in the GaAs/AlAs(111) structures with thin layers is studied using the pseudopotential method. The transition region between the structure components is represented by a half-period of the hexagonal (GaAs) ₃(AlAs)₃ (111) superlattice. It is shown that the allowance for the smooth potential results in a decrease in the Γ-L-mixing, Fano-resonance narrowing, and disappearance of interface states at the GaAs/AlAs(111) interface as compared to the abrupt-interface model. The shifts of the lowest Γ-and L-resonances observed for the structures with the layer thickness <2 nm amount to ∼0.1 eV, which is in good agreement with the behavior of levels in quantum wells. The transmission coefficient of electrons with the energies 0–0.5 eV above the GaAs conduction-band bottom obtained by multivalley calculation is close to that calculated with allowance for the lowest conduction band states Γ ₁ ⁽¹⁾ and Γ ₁ ⁽²⁾ of superlattice and Γ ₁ and L ₁ of binary crystals. This indicates that a two-valley superlattice model of the smooth GaAs/AlAs(111) interface can be developed. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 7–13, July, 2007.     

Resonant Mandelstam-Brillouin light scattering and Raman scattering in semiconductors with intermediate exciton states belonging to discrete exciton bands and the continuous spectrum

The results of a theoretical and experimental investigation of resonant Mandelstam-Brillouin light scattering by thermal acoustic phonons with k=0 near the direct absorption edge (in the case of ZnSe crystals) are analyzed. The appearance of a new type of resonant increase in the intensity of Raman scattering by optical phonons with k≠0, which corresponds to resonance with the scattered light in the output channel, near the indirect absorption edge (in the case of semi-insulating GaP:N crystals) is also reported. The resonant gain reaches ∼4×10³ at frequencies corresponding to overtone scattering assisted by LO(X) and LO(L) phonons. Exciton states belonging to both discrete exciton bands and to the continuous spectrum are considered as the intermediate states involved in the scattering processes in calculations of the resonant scattering tensors. In addition, all the intraband transitions, as well as the interband transitions between the conduction band, the valence bands, and the spin-orbit split-off band are taken into account, and good agreement with the experimental results is obtained. Fiz. Tverd. Tela (St. Petersburg) 40, 938–940 (May 1998)     

Near-IR laser inelastic electronic light scattering spectroscopy on transitions between ground and excited states of acceptor centers in GaAs and InP crystals

We report the development of a method for recording the low-temperature (T=6 K) near-IR inelastic light scattering spectra and the observation of electronic scattering on the transitions 1s _3/2(Γ₈) → 2s _3/2(Γ₈) between the ground and excited states of different shallow acceptor centers in a n-type semi-insulating crystal si-GaAs (n=1.0 × 10⁸ cm⁻³) and in a doped p-InP crystal (p=3.6×10¹⁷ cm⁻³). Moreover, a new line, associated with the transition 1s _3/2(Γ ₈) → 2p _3/2(Γ₈) and due to a dielectric local mode, recorded for the first time in the spectra of narrow-gap semiconductors, was found in the residual-frequency band in the p-InP spectrum between TO(Γ) and LO (Γ) phonons. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 5, 334–339 (10 March 1998)     

Γ andX bandgap hydrostatic deformation potentials for epitaxial In0.52Al0.48As on InP(001)

The pressure dependence of the direct and indirect bandgap of epitaxial In_0.52Al_0.48As on InP(001) substrate has been measured using photoluminescence up to 92 kbar hydrostatic pressure. The bandgap changes from Γ toX at an applied pressure of ∼ 43 kbar. Hydrostatic deformation potentials for both the Γ andX bandgaps are deduced, after correcting for the elastic constant (bulk modulus) mismatch between the epilayer and the substrate. For the epilayer we obtain and+(2.81±0.15)eV for the Γ andX bandgaps respectively. From the pressure dependence of the normalized Γ-bandgap photoluminescence intensity a Γ-X lifetime ratio, (τ_Γ/τ _X ), of 4.1×10⁻³ is deduced.     

Quantum beats in excitons in Cu2O

A theoretical study is carried out of quantum beats (QB) in the time-dependent intensities of absorption of a test pulse and of spontaneous luminescence in a Cu₂O crystal under conditions of double optical resonance. It is assumed that pumping is effected by a CO₂-laser pulse which dynamically couples the exciton levels 1s(Γ ₅ ⁺ ) and 2p(Γ ₄ ⁻ ,Γ ₅ ⁻ ,Γ ₃ ⁻ Γ ₂ ⁻ ) and splits them into two or three pairs of quasi-energy levels. The frequency of the test pulse is in resonance with the frequency Γ ₅ ⁺ of the exciton. The corresponding intensities for various directions of the electric vector of the pump field E _L, the polarization vector ξ, and the wave vector q of the test pulse are obtained. The frequency of the quantum beats is twice the Rabi frequency, which for different values of E _L, ξ and q contains different sets of matrix elements of the dipole transitions between the levels 1s(Γ ₅ ⁺ ) and 2p(Γ ₄ ⁻ ,Γ ₅ ⁻ ,Γ ₃ ⁻ Γ ₂ ⁻ ). Thus, by measuring the period of the quantum beats it is possible to determine the unknown matrix elements of the indicated transitions. Fiz. Tverd. Tela (St. Petersburg) 39, 844–847 (May 1997)     

Spectroscopic study of the behavior of the order parameter in model ferroelastic crystals of Hg<Subscript>2</Subscript>Cl<Subscript>2</Subscript>

Information is obtained about the temperature behavior of the order parameter of a phase transition by theoretical and experimental investigation of odd (acoustic and IR-active) phonons that appear in the Raman scattering spectra from the X points of the Brillouin zone (BZ) boundary in the paraphase of Hg₂Cl₂ crystals and are induced by the phase transition, unit-cell doubling, and the X → Γ folding in the BZ. The relevant critical exponents are determined, whose values are in agreement with the results of X-ray diffraction measurements and, within the Landau phenomenological theory of phase transitions, indicate that the phase transition in these crystals is close to the tricritical point.     

Appearance of resonant Γ-X mixing in gradient GaAs/AlAs short-period superlattices

We have experimentally investigated the low-temperature (10 K) luminescence and reflection spectra of a gradient GaAs/AlAs superlattice. We have examined the behavior of phonon satellites in the vicinity of the X-Γ resonance. Smooth passage through the resonance was achieved by scanning an exciting light beam along the surface of a gradient sample. Based on our experimental results, we have determined the functional dependence of the Γ-X mixing potential on the resonance detuning. Fiz. Tverd. Tela (St. Petersburg) 40, 822–823 (May 1998)     

Raman scattering of light by optical phonons in Si-Ge-Si structures with quantum dots

Raman scattering of light by optical phonons in Si-Ge-Si structures with pseudomorphic germanium quantum dots has been investigated. Resonance amplification of the scattering intensity on E ₀ (Γ₇−Γ₈) transitions has been observed. It is shown that as a result of the formation of the layer of germanium quantum dots, the resonance energy is ∼0.3 eV higher than in the two-dimensional case. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 3, 203–207 (10 August 1996)     

The partial L1 level width related to the Coster-Kronig L1?L3M5 transition in W, Re, Os, Ir, and Pt atoms

For the elements W, Re, Os, Ir, and Pt, we experimentally studied the relative intensities of the Lβ₂ and Lβ₃ lines, I(β₂)/I(β₃), in the x-ray emission L spectrum, as well as the relative intensities of the multiple-ionization satellites of the Lβ₂ line, I(β_2s )/I(β_2+s ). Based on the data obtained, we determined the partial L ₁ level width related to the Coster-Kronig (CK) L ₁−L ₃ M ₅ transition (Γ_13M ). We found that the width Γ_13M in the series W, Re, Os, Ir, and Pt monotonically increases, remaining (with the exception of Ir) a factor of 2.3–1.3 smaller than that predicted by a calculation performed in the approximation of “frozen” orbitals. We discuss the possible causes of this discrepancy. The derived widths Γ_13M were used to improve the published total L ₁ level widths Γ(L ₁), CK yields f ₁₂ and f ₁₃, and fluorescence yields ω₁. __________ Translated from Optika i Spektroskopiya, Vol. 95, No. 4, 2003, pp. 566–570. Original Russian Text Copyright ? 2003 by Borovoĭ, Ishchenko, Shiyanovskiĭ.     

The S-D mixing and dielectron widths of higher charmonium 1−− states

The dielectron widths of ψ(4040), ψ(4160), and ψ(4415), and their ratios are shown to be in good agreement with experiment, if in all cases the S-D mixing with a large mixing angle θ ≅ 34° is taken. Arguments are presented why continuum states give small contributions to the wave functions at the origin. We find that the Y (4360) resonance, considered as a pure 3 ³ D ₁ state, would have very small dielectron width, Γ _ee (Y (4360)) = 0.060 keV. On the contrary, for large mixing between the 4 ³ S ₁ and 3 ³ D ₁ states with the mixing angle θ = 34.8°, Γ _ee (ψ(4415)) = 0.57 keV coincides with the experimental number, while a second physical resonance, probably Y (4360), has also a rather large Γ _ee (Y (∼4400)) = 0.61 keV. For the higher Y (4660) resonance, considered as a pure 5 ³ S ₁ state, we predict the dielectron width Γ _ee (Y (4660)) = 0.70 keV, but it becomes significantly smaller, namely 0.31 keV, if the mixing angle between the 5 ³ S ₁ and 4 ³ D ₁ states has the characteristic value θ = 34°. The mass and dielectron width of the 6 ³ S ₁ charmonium state are calculated. The text was submitted by the authors in English.     

Values of adsorption and surface concentrations of the components in Na-K-Cs alloys

The values of adsorption Γ _i ^(N) and surface concentration X _i ^ω of all the components in alloys of the Na-K-Cs system were determined. The adsorption of cesium Γ_Cs^(N) was found to be > 0, while that for sodium Γ_Na^(N) was < 0 in all ternary alloys. The adsorption of potassium was found to undergo inversion when passing from Γ_K^(N) > 0 in ternary alloys (the ratios being X _Na: X _Cs > 14.4 and X _Cs < 6.5 at %) to the negative value of adsorption Γ_K^(N) in the alloys with X _Na: X _Cs < 14.4 and any cesium concentrations. Using the Na-K-Cs system, it was demonstrated for the first time that conditions ΣΓ _i ^(N) = 0 and ΣX _i ^ω = 1 and are fulfilled in ternary alloys.     

Pressure-tuned resonance Raman scattering and photoluminescence studies on MBE grown bulk GaAs at theE 0 gap

Hydrostatic pressure has been used to tune in resonance Raman scattering (RRS) in bulk GaAs. Using a diamond anvil cell, both the photoluminescence peak (PL) and the 2 LO and LO-phonon Raman scattered intensities have been monitored, to establish RRS conditions. When theE ₀ gap of GaAs matchesħω _S orħω _L, the 2 LO and LO-phonon intensity, respectively, exhibit resonance Raman scattering maxima, at pressures determined byħω _L. With 647.1 nm radiation (ħω _L = 1.916 eV), a sharp and narrow resonance peak at 3.75 GPa is observed for the 2 LO-phonon. At this pressure the 2 LO-phonon goes through its maximum intensity, and falls right on top of the PL peak, revealing thatħω _S(2 LO) =E ₀. This is the condition for “outgoing” resonance. Experiments with other excitation energies (ħω _L) show, that the 2 LO resonance peak-pressure moves to higher pressure with increasingħω _L, and the shift follows precisely theE ₀ gap. Thus, the 2 LO RRS is an excellent probe to follow theE ₀ gap, far beyond the Γ-X cross-over point. A brief discussion of the theoretical expression for resonance Raman cross section is given, and from this the possibility of a double resonance condition for the observed 2 LO resonance is suggested. The LO-phonon resonance occurs at a pressure whenħω _L ≈E ₀, but the pressure-induced transparency of the GaAs masks the true resonance profile.     

What can we learn from the decay of NX(1625) in the molecule picture?

Considering two assumptions on the molecular state, i.e. the S-wave Λ̄–K^- and S-wave Σ̄⁰–K^- molecular states, we study the possible decays of N̄_X(1625) that include N̄_X(1625)→K^-Λ̄,π⁰p̄,ηp̄,π^-n̄. Our results indicate that (1) if N̄_X(1625) is the Λ̄–K^- molecular state, K^-Λ̄ is the main decay mode of N̄_X(1625), and the branching ratios of the rest decay modes are tiny; (2) if N̄_X(1625) is the Σ̄⁰–K^- molecular state, the branching ratio of N̄_X(1625)→K^-Λ̄ is one or two orders smaller than that of N̄_X(1625)→π⁰p̄,ηp̄,π^-n̄. Thus the search for N̄_X(1625)→π⁰p̄,ηp̄,π^-n̄ will be helpful to shed light on the nature of N̄_X(1625). PACS 13.30.Eg, 13.75.Jz     

Electronic properties of multinary alloys

Summary A model version of the coherent-potential approximation (CPA) is outlined to evaluate the fundamental energy gapsΓ _15v -Γ _1c ′,Γ _15v -L _1c ,Γ _15v -X _1c of a multinary solid solution. A comparison of theoretical results with the transition energy values obtained from direct interpolation of the corresponding values of ternary alloys is presented for some composition of the solution Al_1−x−y Ga _x In _y As at fixed lattice constants (matching the lattice constants of InP and AlAs). Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

Intervalley scattering in GaAs: ab initio calculation of the effective parameters for Monte Carlo simulations

Interactions between excited electrons and short-wavelength (intervalley) phonons in GaAs are studied using density functional theory for the conduction bands, and density functional perturbation theory for phonon frequencies and matrix elements of the electron–phonon interaction. We have calculated the deformation potentials (DPs) and the average intervalley scattering time 〈τ〉. The integration of the scattering probabilities over all possible final states in the Brillouin zone has been performed without any ad hoc assumption about the behavior of the electron–phonon matrix elements nor the topology of the conduction band. For transitions from the L point to Γ valley (within the first conduction band), we find 〈τ〉_L to be 1.5 ps at 300 K, in good agreement with time-resolved photoluminescence experiment. We discuss the difference between our calculated DPs, and effective parameters used in Monte Carlo simulations of optical and transport properties of semiconductors. The latter are based on Conwell’s model, in which electron–phonon interaction is described by one single constant and a parabolic model is used for conduction bands. We deduce the effective DP from our 〈τ〉, and compare it to our calculated DPs. We conclude that only effective DPs obtained from a full calculation of 〈τ〉 are relevant parameters for Monte Carlo simulations. PACS 71.10-w; 72.10.Di; 71.55.Eq     

Monte Carlo Modeling of Phonon-assisted Carrier Transport in Cubic and Hexagonal Gallium Nitride

Monte Carlo method is employed for the calculations of electron and hole transport characteristics of cubic and hexagonal GaN at T = 300 K in the fields of E ≤ 1000 kV/cm⁻¹. It is shown that electron drift velocity and mobility is heavily reduced in hexagonal crystals due to additional phonon modes (~ 26 meV) and by fast electron scattering between the lowest Γ₁ valley and the minimally (~ 400 meV) up-shifted Γ₃ valley. Intervalley scattering is mediated most efficiently by the low-energy (~ 2 meV) acoustic phonons. The randomizing scattering is even more pronounced in p-type crystals where the sub-bands of light and heavy holes merge at the Γ-point of Brillouin zone. Cubic phase crystals are concluded to be advantageous for ultrafast electronic and photonics device performance because electron drift mobility is higher by an order of magnitude, and the hole mobility is several times higher than those in hexagonal phase.     

Dependence of the intrinsic line width of surface states on the wave vector: The Cu(111) and Ag(111) surfaces

The dependence of the intrinsic line width Γ of electron and hole states due to inelastic scattering on the wave vector k _∥ in the occupied surface state and the first image potential state on the Cu(111) and Ag(111) surfaces has been calculated using the GW approximation, which simulates the self-energy of the quasiparticles by the product of the Greens’s function and the dynamically screened Coulomb potential. Different contributions to the relaxation of electron and hole excitations have been analyzed. It has been demonstrated that, for both surfaces, the main channel of relaxation of holes in the occupied surface states is intraband scattering and that, for electrons in the image potential states, the interband transitions play a decisive role. A sharp decrease in the intrinsic line width of the hole state with an increase in k _∥ is caused by a decrease in the number of final states, whereas an increase in Γ of the image potential state is predominantly determined by an increase of its overlap with bulk states.