Study on the Ce substitution effects of BiFeO3 films on ITO/glass substrates

Ce substituted Bi_1−xCe_xFeO₃ (BCFO) films with x=0–0.15 were deposited on indium tin oxide (ITO)/glass substrates by sol–gel process annealed at 500 °C. Rhombohedral phase was confirmed by XRD study and no impure phases were observed till x=0.15. Substantially enhanced ferroelectricity was observed at room temperature due to the substitution of Ce. In the films with x=0.05 and 0.10, the double remnant polarization are 75.5 and 57.7 μC/cm² at an applied field 860 kV/cm. Moreover, the breakdown field was enhanced in the films with Ce substitution.     

Growth and properties of (Pb0.90La0.10)TiO3 thick films prepared by RF magnetron sputtering with a PbO buffer layer

The (Pb_0.90La_0.10)TiO₃ [PLT] thick films (3.0 μm) with a PbO buffer layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering method. The PLT thick films comprise five periodicities, the layer thicknesses of (Pb_0.90La_0.10)TiO₃ and PbO in one periodicity are fixed. The PbO buffer layer improves the phase purity and electrical properties of the PLT thick films. The microstructure and electrical properties of the PLT thick films with a PbO buffer layer were studied. The PLT thick films with a PbO buffer layer possess good electrical properties with the remnant polarization (P_r=2.40 μC cm⁻²), coercive field (E_c=18.2 kV cm⁻¹), dielectric constant (ε_r=139) and dielectric loss (tan δ=0.0206) at 1 kHz, and pyroelectric coefficient (9.20×10⁻⁹ C cm⁻² K⁻¹). The result shows the PLT thick film with a PbO buffer layer is a good candidate for pyroelectric detector.     

Electron microscopy studies of epitaxial MgB2 superconducting thin films grown by in situ reactive evaporation

The morphology and chemistry of epitaxial MgB₂ thin films grown using reactive Mg evaporation on different substrates have been characterized by transmission electron microscopy methods. For polycrystalline alumina and sapphire substrates with different surface planes, an MgO transition layer was found at the interface region. No such layer was present for films grown on MgO and 4-H SiC substrates, and none of the MgB₂ films had any detectable oxygen incorporation nor MgO inclusions. High-resolution electron microscopy revealed that the growth orientation of the MgB₂ thin films was closely related to the substrate orientation and the nature of the intermediary layer. Electrical measurements showed that very low resistivities (several μΩ cm at 300 K) and high superconducting transition temperatures (38 to 40 K) could be achieved. The correlation of electrical properties with film microstructure is briefly discussed.     

Optimal crystal growth conditions of thin films of Bi2Te3 semiconductors

Crystal growth conditions of Bi₂Te₃ narrow bandgap semiconductors have been studied using molecular beam epitaxy method. It was applied to the growth of Bi₂Te₃ on Bridgman single-crystal substrate Sb₂Te₃. Substrate ingots were taken from the natural cleavage along the (0001) plane. The deposited conditions have been studied as a function of substrate temperature (T_s) and flux ratio (F_R=F(Te)/F(Bi)). The quality of deposited layers was controlled by X-ray diffraction, scanning electron microscope (SEM), secondary ion mass spectroscopy (SIMS) depth profiling and energy-dispersive X-ray (EDX) microanalyser. The sticking coefficients K_s(Te) and K_s(Bi) of the elements that compose Bi₂Te₃ were determined. It was found that the stoichiometry of deposited layers depended on substrate temperature and flux ratio. It was observed that all deposited layers were single-crystal in the orientation of their substrates with a small shift due to the stress in layer.     

Influence of cooling rate on the liquid-phase epitaxial growth of Zn3P2

We report the liquid-phase epitaxial growth of Zn₃P₂ on InP (1 0 0) substrates by conventional horizontal sliding boat system using 100% In solvent. Different cooling rates of 0.2–1.0 °C/min have been adopted and the influence of supercooling on the properties of the grown epilayers is analyzed. The crystal structure and quality of the grown epilayers have been studied by X-ray diffraction and high-resolution X-ray rocking measurements, which revealed a good lattice matching between the epilayers and the substrate. The supercooling-induced morphologies and composition of the epilayers were studied by scanning electron microscopy and energy dispersive X-ray analysis. The growth rate has been calculated and found that there exists a linear dependence between the growth rate and the cooling rate. Hall measurements showed that the grown layers are unintentionally doped p-type with a carrier mobility as high as 450 cm²/V s and a carrier concentration of 2.81×10¹⁸ cm⁻³ for the layers grown from 6 °C supercooled melt from the cooling rate of 0.4 °C/min.     

Growth and spectral properties of Nd-doped Sr3Y(BO3)3 crystal

A new crystal of Nd³⁺:Sr₃Y(BO₃)₃ with dimension up to 25×35 mm² was grown by Czochralski method. Absorption and emission spectra of Nd³⁺: Sr₃Y(BO₃)₃ were investigated . The absorption band at 807 nm has a FWHM of 18 nm. The absorption and emission cross sections are 2.17×10⁻²⁰ cm² at 807 nm and 1.88×10⁻¹⁹ cm² at 1060 nm, respectively. The luminescence lifetime τ_f is 73 μs at room temperature     

Investigations on the effect of InSb and InAsSb step-graded buffer layers in InAs0.5Sb0.5 epilayers grown on GaAs (0 0 1)

We report the structural and electrical properties of InAsSb epilayers grown on GaAs (0 0 1) substrates with mid-alloy composition of 0.5. InSb buffer layer and InAs_xSb_1−x step-graded (SG) buffer layer have been used to relax lattice mismatch between the epilayer and substrate. A decrease in the full-width at half-maximum (FWHM) of the epilayer is observed with increasing the thickness of the InSb buffer layer. The surface morphology of the epilayer is found to change from 3D island growth to 2D growth and the electron mobility of the sample is increased from 5.2×10³ to 1.1×10⁴ cm²/V s by increasing the thickness of the SG layers. These results suggest that high crystalline quality and electron mobility of the InAs_0.5Sb_0.5 alloy can be achieved by the growth of thick SG InAsSb buffer layer accompanied with a thick InSb buffer layer. We have confirmed the improvement in the structural and electrical properties of the InAs_0.5Sb_0.5 epilayer by quantitative analysis of the epilayer having a 2.09 μm thick InSb buffer layer and 0.6 μm thickness of each SG layers.     

Growth and spectral properties of Nd:LaVO4 crystal

This paper reports the growth and spectral properties of 3.5 at% Nd³⁺:LaVO₄ crystal with diameter of 20×15 mm² which has been grown by the Czochralski method. The spectral parameters were calculated based on Judd–Ofelt theory. The intensity parameters Ω_λ are: Ω₂=2.102×10⁻²⁰ cm², Ω₄=3.871×10⁻²⁰ cm², Ω₆=3.235×10⁻²⁰ cm². The radiative lifetime τ_r is 209 μs and calculated fluorescence branch ratios are: β₁(0.88μm)=45.2, β₂(1.06μm)=46.7, β₃(1.34μm)=8.1. The measured fluorescence lifetime τ_f is 137 μm and the quantum efficiency η is 65.6%. The absorption band at 808 nm wavelength has an FWHM of 20 nm. The absorption and emission cross sections are 3×10⁻²⁰ and 6.13×10⁻²⁰ cm², respectively.     

Growth and morphology of ruby crystals with unusual chromium concentration

Single crystals of ruby have been obtained from fluxed melts based on the systems Li₂O–MoO₃, Li₂O–WO₃, Na₂O–WO₃, 2PbO–3V₂O₅, PbO–V₂O₅–WO₃, PbF₂–Bi₂O₃ and Na₃AlF₆ by both the TSSG method and spontaneous crystallization at the temperatures 1330–900 °C. Al₂O₃ solubility has been measured for the flux composition of 2Bi₂O₃–5PbF₂ in the temperature range 1200–1000 °C and dissolution enthalpy has been defined as 29.4 KJ/Mol. The composition of grown crystals was studied by electron microprobe analysis. The synthetic ruby contains from 0.51 to 6.38 at% of chromium admixture depending on the crystal growth conditions. Experimental results on growth conditions, composition and morphology of grown crystals are presented for each flux and temperature interval.     

High-temperature conductivity in chemical bath deposited copper selenide thin films

This paper reports high-temperature (305–523 K) electrical studies of chemical bath deposited copper (I) selenide (Cu_2−xSe) and copper (II) selenide (Cu₃Se₂) thin films. Cu_2−xSe and Cu₃Se₂ have been prepared on glass substrates from the same chemical bath at room temperature by controlling the pH. From X-ray diffraction (XRD) profiles, it has been found that Cu_2−xSe and Cu₃Se₂ have cubic and tetragonal structures, respectively. The composition of the chemical constituent in the films has been confirmed from XRD data and energy-dispersive X-ray analysis (EDAX). It has been found that both phases of copper selenide thin films have thermally activated conduction in the high-temperature range. In this paper we also report the variation of electrical parameters with film thickness and the applied voltage.     

Effect of NH3 on the growth characterization of TiN films at low temperature

Titanium nitride (TiN) films were obtained by the atmospheric pressure chemical vapor deposition method of the TiCl₄–N₂–H₂ system with various flow rates of NH₃ at 600°C. The growth characteristics, morphology and microstructure of the TiN films deposited were analyzed by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Without NH₃ addition, no TiN was deposited at 600°C as shown in the X-ray diffraction curve. However, by adding NH₃ into the TiCl₄–N₂–H₂ system, the crystalline TiN was obtained. The growth rate of TiN films increased with the increase of the NH₃ flow rate. The lattice constant of TiN films decreased with the increase of the NH₃ flow rate. At a low NH₃ flow rate, the TiN (2 2 0) with the highest texture coefficient was found. At a high NH₃ flow rate, the texture coefficient of TiN (2 0 0) increased with the increase of the NH₃ flow rate. In morphology observation, thicker plate-like TiN was obtained when the NH₃ flow rate was increased. When the flow rate of NH₃ was 15 sccm, Moiré fringes were observed in the TiN film as determined by TEM analysis. The intrinsic strain was found in the TiN film as deposited with 60 sccm NH₃.     

Bi20TiO32 nanocones prepared from Bi–Ti–O mixture by metalorganic decomposition method

Bi₂₀TiO₃₂ in the form of nanocones are reported for the first time, which have been found during the formation of Bi₂Ti₂O₇ nanocrystals. Bi₂₀TiO₃₂ nanocones were prepared by metalorganic decomposition technique. From X-ray patterns, it was found that Bi₂₀TiO₃₂ is a metastable phase, and can transform gradually into Bi₂Ti₂O₇ phase with the annealing time increasing at a temperature of 550°C. The image of field emission scanning electron microscopy shows that the lengths of the nanocones are up to several micrometers and the diameters of cusps range from 20 to 200 nm. The studies of transmission electron microscopy show that the nanocones are crystalline Bi₂₀TiO₃₂. The growth mechanism of Bi₂₀TiO₃₂ nanocones has been proposed, which is similar to the vapor–liquid–solid growth mechanism.     

The kinetics of parasitic growth in GaAs MOVPE

Gallium arsenide (GaAs) deposition was carried out in a horizontal quartz reactor tube with trimethylgallium (TMGa) and arsine (AsH₃) as precursors, using a hydrogen (H₂) carrier gas. Temperatures were in the range 400–500 °C, where surface reactions limit deposition rate. Nucleation time and deposition rate were monitored using laser interferometry, optimum reflectance was gained by aligning a quartz wafer to back reflect the incident beam. The 980 nm infrared laser beam was sufficiently long in wavelength to be able to penetrate the wall deposit. Results showing the effect of temperature and V/III ratio on the nucleation time and deposition rate are presented, where with temperature the nucleation delay was observed to reduce and the growth rate to increase. The nucleation delay is consistent with a thermally activated surface nucleation for the parasitic GaAs. A theoretical growth rate model, based on a restricted set of reaction steps was used to compare with the experimental growth rates. Without any free parameters, the growth rates from theoretical calculation and experiment agreed within a factor of two and showed the same trends with V/III ratio and temperature. The non-linearity of the theoretical growth rates on an Arrhenius plot indicates that there is more than one dominant reaction step over the temperature range investigated. The range of experimental activation energies, calculated from Arrhenius plots, was 17.56–23.59 kJ mol⁻¹. A comparison of these activation energies and minimum deposition temperature with the literature indicates that the wall temperature measurement on an Aixtron reactor is over 100 °C higher than previously reported.     

Ambient-condition growth of superconducting YBa2Cu4O8 single crystals using KOH flux

YBa₂Cu₄O₈ is a stoichiometric oxide superconductor of T_c80 K. Unlike YBa₂Cu₃O_7−δ, this compound is free from oxygen vacancy or twin formation and does not have any microscopic disorder in the crystal. Doping with Ca raises its T_c to 90 K. The compound is a promising superconductor for technological application. Up to now, single crystals have not been grown without using specialized apparatus with extremely high oxygen pressure up to 3000 bar and at over 1100 °C due to the limited range of reaction kinetics of the compound. This fact has delayed the progress in the study of its physical properties and potential applications. We present here a simple growth method using KOH as flux that acts effectively for obtaining high-quality single crystals in air/oxygen at the temperature as low as 550 °C. As-grown crystals can readily be separated from the flux and exhibit a perfect orthorhombic morphology with sizes up to 0.7×0.4×0.2 mm³. Our results are reproducible and suggest that the crystals can be grown using a conventional flux method under ambient condition.     

Improved growth of PbI2 single crystals

The phase equilibrium and the crystallization process of lead iodide (PbI₂) melt have been primarily investigated according to the lead–iodine phase diagram. It is found that the iodine evaporation and the segregated lead deposition are the two important factors that affect the PbI₂ crystal quality. The new method of Pulling U-type quartz growth ampoule has been made to impede the decomposition of PbI₂ and the vaporization and condensation of iodine. An orange and translucent PbI₂ single crystal of large size was obtained by the improved growth method, i.e. U-type ampoule pulling. Resistivity of the as-grown crystal is up to 4×10¹¹ Ω cm, and IR transmission is up to 45% in the region from 7800 to 450 cm⁻¹. Therefore, the improved growth method is a promising convenient new method for the growth of high quality PbI₂ crystals.     

Characteristic crystal growth from amorphous WO3 film by vacuum heating

Selective growth of WO₂, W and WO_3−x crystals from amorphous WO₃ film by vacuum heating at 400–900°C was clarified. The grown WO_3−x crystals were incommensurate structure based on crystallographic share structure. The growth process of WO₂ crystal in the amorphous film was directly observed at high temperature in the electron microscope. The growth front of the WO₂ crystal consumes WO₃ microcrystallites with various orientations. The growth speed of the WO₂ depended on WO₃ microcrystallites orientation. The origin of the wavy growth front of WO₂ was due to an orientation dependence of the WO₃ microcrystallites.     

Growth of nitrogen-doped p-type ZnO films by spray pyrolysis and their electrical and optical properties

Nitrogen-doped ZnO films were deposited on silicon (1 0 0) substrate using zinc acetate and ammonium acetate aqueous solution as precursors by ultrasonic spray pyrolysis. Successful p-type doping can be realized at optimized substrate temperature. The p-type ZnO films show excellent electrical properties such as hole concentration of 10¹⁸ cm⁻³, hole mobility of 10² cm² V⁻¹ s⁻¹ and resistivity of 10⁻² Ω cm. In the photoluminescence measurement, a strong near-band-edge emission was observed, while the deep-level emission was almost undetectable in both undoped and N-doped ZnO films. The growth and doping mechanism of N-doped ZnO films were discussed.     

Characterisation of semiconducting V2O5–Bi2O3–TeO2 glasses through ultrasonic measurements

Tellurite containing vanadate (50−x)V₂O₅–xBi₂O₃–50TeO₂ glasses with different bismuth (x=0, 5, 10, 15, 20 and 25 wt%) contents have been prepared by rapid quenching method. Ultrasonic velocities (both longitudinal and shear) and attenuation (for longitudinal waves only) measurements have been made using a transducer operated at the fundamental frequency of 5 MHz in the temperature range from 150 to 480 K. The elastic moduli, Debye temperature, and Poisson’s ratio have been obtained both as a function of temperature and Bi₂O₃ content. The room temperature study on ultrasonic velocities, attenuation, elastic moduli, Poisson’s ratio, Debye temperature and glass transition temperature show the absence of any anomalies with addition of Bi₂O₃ content. The observed results confirm that the addition of Bi₂O₃ modifier changes the rigid formula character of TeO₂ to a matrix of regular TeO₃ and ionic behaviour bonds (NBOs). A monotonic decrease in velocities and elastic moduli, and an increase in attenuation and acoustic loss as a function of temperature in all the glass samples reveal the loose packing structure, which is attributed to the instability of TeO₄ trigonal bipyramid units in the network as temperature increases. It is also inferred that the glasses with low Bi₂O₃ content are more stable than with high Bi₂O₃ content.     

Properties of ZnO films grown on (0 0 0 1) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD

In this paper, we compare the properties of ZnO thin films (0 0 0 1) sapphire substrate using diethylzinc (DEZn) as the Zn precursor and deionized water (H₂O) and nitrous oxide (N₂O) as the O precursors, respectively in the main ZnO layer growth by atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD) technique. Surface morphology studied by atomic force microscopy (AFM) showed that the N₂O-grown ZnO film had a hexagonal columnar structure with about 8 μm grain diameter and the relatively rougher surface compared to that of H₂O-grown ZnO film. The full-widths at half-maximum (FWHMs) of the (0 0 0 2) and () ω-rocking curves of the N₂O-grown ZnO film by double-crystal X-ray diffractometry (DCXRD) measurement were 260 and 350 arcsec, respectively, indicating the smaller mosaicity and lower dislocation density of the film compared to H₂O-grown ZnO film. Compared to H₂O-grown ZnO film, the free exciton A (FX_A) and its three phonon replicas could be clearly observed, the donor-bound exciton A⁰X (I₁₀):3.353 eV dominated the 10 K photoluminescence (PL) spectrum of N₂O-grown ZnO film and the hydrogen-related donor-bound exciton D⁰X (I₄):3.363 eV was disappeared. The electron mobility (80 cm²/V s) of N₂O-grown ZnO film has been significantly improved by room temperature Hall measurement compared to that of H₂O-grown ZnO film.     

Surface and interfacial structure of epitaxial SrTiO3 thin films on (0 0 1) Si grown by molecular beam epitaxy

Effects of relaxation of interfacial misfit strain and non-stoichiometry on surface morphology and surface and interfacial structures of epitaxial SrTiO₃ (STO) thin films on (0 0 1) Si during initial growth by molecular beam epitaxy (MBE) were investigated. In situ reflection high-energy electron diffraction (RHEED) in combination with X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectrometry (XPS) and transmission electron microscopy (TEM) techniques were employed. Relaxation of the interfacial misfit strain between STO and Si as measured by in situ RHEED indicates initial growth is not pseudomorphic, and the interfacial misfit strain is relaxed during and immediately after the first monolayer (ML) deposition. The interfacial strain up to 15 ML results from thermal mismatch strain rather than lattice mismatch strain. Stoichiometry of STO affects not only surface morphology but interfacial structure. We have identified a nanoscale Sr₄Ti₃O₁₀ second phase at the STO/Si interface in a Sr-rich film.