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1.
The enhancement of the nonlinear properties of materials is an interesting topic since it has many applications in optical devices and medicines. The Z-scan technique was used to study the values of the two-photon absorption (β), second-order molecular hyperpolarizability (γR), third-order susceptibility (χR), and nonlinear refractive index (n2) of Alizarin Red S in different media using a continuous-wave diode-pump laser radiation at 532 nm. For Alizarin Red S in a droplet, the β, n2, χR, and γR were estimated at the order of 10?7 cm2/W and 10?12 cm/W, 10?3 m3 W?1 s?1 and 10?24 m6 W?1 s?1, respectively. The results indicated that the values of β and n2 reduced, whereas the values of χR and γR were enhanced when the solvent was changed from droplet to water, DMF, and dimethyl sulfoxide due to the change in the solvent’s dielectric constant (ε). Moreover, the values of β were enhanced by an increase in the concentration of the surfactant in the aqueous solution. The absorption spectra of Alizarin Red S in the aqueous solution was observed at 428 nm, and a few red shifts in the absorption spectra were observed with a reduction in the dielectric constant of the medium. The same effect was observed in the absorption spectra of Alizarin Red S in the droplet when the bulk dielectric constant reduced. The dielectric constant can affect the fluorescence spectra of Alizarin Red S when the solution is changed from water to dimethyl sulfoxide. The dipole moments of Alizarin Red S in the different media were studied using the quantum perturbation theory.  相似文献   

2.
Bulk samples of oriented carbon nanotubes were prepared by electric arc evaporation of graphite in a helium environment. The temperature dependence of the conductivity σ(T), as well as the temperature and field dependences of the magnetic susceptibility χ(T, B) and magnetoresistance ρ(B, T), was measured for both the pristine and brominated samples. The pristine samples exhibit an anisotropy in the conductivity σ(T)/σ>50, which disappears in the brominated samples. The χ(T, B) data were used to estimate the carrier concentration n 0 in the samples: n 0ini ~3×1010 cm?2 for the pristine sample, and n 0Br~1011 cm\t—2 for the brominated sample. Estimation of the total carrier concentration n=n e+n p from the data on ρ(B, T) yields n ini=4×1017 cm?3 (or 1.3×1010 cm?2) and n Br=2×1018 cm?3 (or 6.7×1010 cm?2). These estimates are in good agreement with one another and indicate an approximately fourfold increase in carrier concentration in samples after bromination.  相似文献   

3.
The static dielectric constant of a two-dimensional electron gas is studied as a function of the strength of a dc magnetic field applied normal to the plane of the electron gas. At high temperatures (kT ? h?ωc) the static dielectric function is independent of magnetic field, and for long wavelengths is given by ? ? ?0 + 2nvme2/q, where ?0 is the background dielectric constant and nv is the valley degeneracy. At low-temperatures, quantum oscillations become important and dramatically modify the screening.  相似文献   

4.
Thin films of CuxS with stoichiometric compositions between Cu2.000S and Cu1.995S, i.e. monoclinic chalcocite have been prepared by evaporation of Cu1.8S and by reactive sputtering deposition from a Cu target in an Ar-H2S-H2, atmosphere. The hole concentration ch and the hole conductivity σh have been determined as a function of the composition x of CuxS at 20°C using the van der Pauw method for Hall effect and electrical conductivity measurements. From the results the Hall mobility uh for holes has been calculated. The values for Cu1.999S are σh = 7Ω?1 cm?1, ch = 1.5 × 1019cm?3uh = 3 cm2V?1sec?1, those for Cu1.995S are σh=35Ω?1cm?1, ch=1.0 × 1020 cm?3, uh=2 cm2 V? sec?1. Values for intermediate stoichiometries will be reported in the text.  相似文献   

5.
Frequency dependences of the linear and nonlinear longitudinal dynamic susceptibilities of an almost isotropic cubic CdCr2Se4 ferromagnet were studied experimentally in the ordered phase. It was found that at frequencies above the two-magnon creation threshold the linear susceptibility decreases as χ1∝ω?0.28 with increasing frequency and the nonlinear susceptibility decreases as χn∝ω?0.73, irrespective of n, where n is an odd number. The observed susceptibility anomalies are due to the dipolar forces that violate the conservation of total spin.  相似文献   

6.
The method of approximated four-parameter representation of the electron-impact cross sections for a helium atom excited from the 23 S 1 metastable state into higher triplet states is applied and discussed. The approximation consists in interpolation over the whole set of the cross section values for each helium atomic level measured in our experiments and reported by other researchers. The approximation parameters and the cross sections calculated using these parameters for the maxima of the corresponding excitation functions are presented for 19 triplet levels of the S, P, and D HeI series with n=2–10. The interpolated values are compared to the theoretical cross sections. The serial regularities were investigated for the S, P, and D levels studied and a decrease in the cross sections for excitation from the given metastable state within each series, described by the approximate law Q=Cn ?5, was revealed. Validity of the similarity relationship and the Bethe approximation for cross sections in the 23 S?n 3 P series was verified. It is shown that the cross sections for a triplet level excitation from the 23 S 1 metastable state exceed the corresponding values for excitation from the ground state of helium by a factor of approximately 103 for n=2 and 3 and 10 2 for the higher levels. It is concluded that the proposed method of representation of the cross sections for the electron-impact excitation of triplet levels from the metastable state increases accuracy and more importantly, reliability of the final results.  相似文献   

7.
Results of studying the temperature dependence of the residual polarization of negative muons in crystalline silicon with germanium (9×10 19 cm ?3 ) and boron (4.1×10 18 , 1.34×10 19 , and 4.9×10 19 cm ?3 ) impurities are presented. It is found that, similarly to n-and p-type silicon samples with impurity concentrations up to ~10 17 cm ?3 , the relaxation rate ν of the magnetic moment of a μ Al acceptor in silicon with a high impurity concentration of germanium (9×10 19 cm ?3 ) depends on temperature as ν~T q , q≈3 at T=(5–30) K. An increase in the absolute value of the relaxation rate and a weakening of its temperature dependence are observed in samples of degenerate silicon in the given temperature range. Based on the experimental data obtained, the conclusion is made that the spin-exchange scattering of free charge carriers makes a significant contribution to the magnetic moment relaxation of a shallow acceptor center in degenerate silicon at T?30 K. Estimates are obtained for the effective cross section of the spin-exchange scattering of holes (σ h ) and electrons (σ e ) from an Al acceptor center in Si: σ h ~10?13 cm2 and σ e ~8×10?15 cm2 at the acceptor (donor) impurity concentration n a (n d )~4×1018 cm?3.  相似文献   

8.
This study examined the acoustic phonon mode of ionic liquids consisting of 1-alkyl-3-methyl-imidazolium family (CnMIM) cations with n values ranging from 2 to 10 and bis(trifluoromethylsulfonyl)amide (TFSA) anion in the temperature range from 300 K to 100 K. [CnMIM]+[TFSA]? showed depolarized (VH) components of Brillouin peaks at temperatures below the glass transition temperature when n is larger than 4. On the other hand, in the case of ionic liquids with different anions, such as [C4MIM]+[BF4]?, [C4MIM]+[PF6]? and [C8MIM]+[BF4]?, the VH component of Brillouin peaks was not observed in the temperature range investigated. The dielectric loss spectra showed that the temperature dependence of alkyl chain domain relaxation of all ionic liquids followed the Arrhenius law and showed an increase in activation energy at the temperature where the VH component of Brillouin peak appeared. These results suggest that the observed depolarized component of Brillouin peak might originate from uniquely induced polarization in the 2nd domain composed of head groups of cations and anions.  相似文献   

9.
The forced volume magnetostriction of polycrystalline nickel at 4.2 K has been determined with a relative accuracy of 2 × 10?2. Combining our result with previous data on the forced magnetostriction, we derive for the forced magnetostriction constants: h'0 = (40 ± 1) × 10?8T?1, h'1 = (-95 ± 2) × 10?8T?1, h'2 = (-19 ± 2) × 10 ?8T?1.  相似文献   

10.
Although the problem of finding the natural frequencies of free vibration of a simply supported circular plate has a straightforward solution, very few numerical results are available in the literature. In the present work accurate (six significant figure) non-dimensional frequency parameters (λ2) are given for all values of n + s ? 10, where n and s are the numbers of nodal diameters and internal nodal circles, respectively, and for Poisson's ratios 0, 0·1, …, 0·5. Simplified formulas for determining additional values of λ2 for large s are derived by the use of asymptotic expansions.  相似文献   

11.
The proof is given for the existence of the reaction e+e → h±h? in the energy range 1400–2400 MeV, and its energy dependence is compared with that of e+e → e±e?, in the same experimental conditions of observation. The exponent of the s-dependence of the ratio α = (e+e → h±h?)/ (e+e → e±e?) is measured to be n = 2.08 ± 0.45, in the s-range (1.96 − 5.76) GeV2, on the basis of 51 e+e → h±h? events and 8918 e+e → e±e? events observed.  相似文献   

12.
Nine sharp fractions of poly(ethylene oxide) (PEO) glycol with number-average molar masses (M n) in the range from 0.6 × 103 to 20 × 103 (PEO-0.6 to PEO-20) were characterized by magnetic susceptibility χ measured in the temperature interval 293 K to 378 K. In contrast to the liquidlike PEO-0.6 with temperature-invariant χ, the values of χ for each of the remaining solid samples, after the initial increase, exhibited two plateaus separated by a relatively narrow temperature interval of their second increase. The jumps of χ at lower and higher temperatures were attributed to a solid-state transition of unspecific nature and to the melting of the crystal fraction, respectively.

The temperature-invariant values of χn in the melt state above T m pass through a minimum for the sample PEO-2.0 and then increase again with (Mn) to a limiting value χ = ?0.622 × 10?6. It is concluded that a considerable contribution of the molar-mass-dependent “paramagnetism” χP = χ ? χd (where χd is the diamagnetic contribution estimated by Kirkwood's equation) to the total magnetic susceptibility of PEO fractions reflects distortions of the spherical symmetry of the electron shells around chain atoms resulting from the discontinuous change of both inter- and intrachain interactions as the (Mn) increases through and above the critical crossover molar mass (Mcr ) = 2 × 103.  相似文献   

13.
Off-diagonal elements ?-1 (q, q + gh, ω) of the inverse dielectric matrix are shown to be measurable by means of inelastic scattering of X-ray photons from two different modes of the wave field, which is generated within the analyzer of a Laue-case X-ray interferometer at the interference position.  相似文献   

14.
Let G n ? Diff+(S 1) be the stabilizer of n given points of S 1. How much information do we lose if we restrict a positive energy representation \(U^c_h\) associated to an admissible pair (c, h) of the central charge and lowest energy, to the subgroup G n ? The question, and a part of the answer originate in chiral conformal QFT. The value of c can be easily “recovered” from such a restriction; the hard question concerns the value of h. If c ≤ 1, then there is no loss of information, and accordingly, all of these restrictions are irreducible. In this work it is shown that \(U^c_{h}|_{G_n}\) is always irreducible for n =  1 and, if h =  0, it is irreducible at least up to n ≤  3. Moreover, an example is given for c >  2 and certain values of \(h \neq \tilde{h}\) such that \(U^c_{h}|_{G_1}\simeq U^c_{\tilde{h}}|_{G_1}\) . It is also concluded that for these values \(U^c_{h}|_{G_n}\) cannot be irreducible for n ≥  2. For further values of c, h and n, the question is left open. Nevertheless, the example already shows that, on the circle, there are conformal QFT models in which local and global intertwiners are not equivalent.  相似文献   

15.
A universal absorption technique for studying the kinetics of relaxation of atomic states in the afterglow of a repetitively pulsed discharge in metal vapor lasers is proposed. It uses the measurement of the absorption of narrowband emission of a tunable dye laser and numerical simulation of absorption. The relaxation of metastable 6p 3 2 D 3 2/0 states of Bi atoms in the afterglow of a 472.2-nm bismuth vapor laser was studied. The prepulse values of the concentration of metastable atoms n m were not higher than 1011 cm?3 and did not impede the improvement of laser characteristics. The afterpulse values of n m were ~1013 cm? 3.  相似文献   

16.
This work is devoted to studying the parameters of the cathode spot of a vacuum arc. According to calculations under conditions of autoelectronic emission, the temperature of the cathode spot is T n = (1–2.5) × 103 K, the electric-field strength is E = (1–6) × 107 V cm?1, and the current density in the spot is j n = (0.15–3) × 107 A cm?2. The values of the cathode-spot parameters for cathodes of different materials are obtained and the type of electron emission is determined.  相似文献   

17.
A non-equilibrium semiconductor model involving the processes of photogeneration of electron-hole pairs (e-h) (rate G), stimulated creation of excitons from e-h (rate constant C) and decay of excitons on recombination centres (rate constant k) is analyzed in this paper for steady states and limit cycle behaviour. Considering the exciton decay to be similar to enzymatic processes in chemical reactions obeying a Michaelis-Menten law, and choosing units such that k = 1 = N, where N is the concentration of recombination centres, the model represents a 2-parameter (C and G) 2-dimensional (exciton and electron-hole concentrations x, n) dynamical system with a unique steady state (x0,n0) which is unstable in the region (l ? G)3?4C, the equality sign corresponding to the bifurcation curve in parameter space. In the region (l ? G)3 > 4C the system displays a unique stable limit cycle which is obtained in analytical form by employing a two-time-scales method for parameters in the neighbourhood of the bifurcation curve. The limit cycles are tilted ellipses with angular frequency \?gw of the order of 106 s?1. In a realistic semiconductor situation G$?10?3.  相似文献   

18.
Highly optical, good crystalline and randomly aligned ZnO nanorods were synthesized by the hydrothermal method. The dielectric properties of ZnO nanorods were attributed to the interfacial polarization at low frequencies (below 10 kHz) and orientational polarization at higher frequencies. The observed ω(n?1) dependence of dielectric loss was discussed on the basis of the Universal model of dielectric response. Dielectric loss peak was composed of the Debye like loss peak at higher frequencies and interfacial loss peak at lower frequencies. Charge transport through the grain and grain boundary region was investigated by impedance spectroscopy. At higher temperatures the conductivity of the nanorod was mainly through the grain interior and the overall impedance was contributed by the grain boundary region. The activation energy of nanorod was calculated as 0.078 eV, which is slightly higher than the reported bulk value.  相似文献   

19.
The dependencies of complex dielectric functions (the dielectric constant, ε 1, and the dielectric loss, ε 2), on frequency and temperature of zinc phthalocyanine (ZnPc) thin films sandwiched between either gold or aluminum Ohmic-electrode contacts have been investigated in the temperature range of 93–470 K and frequency range 0.1–20 kHz. It is found that both values of ε 1 and ε 2 decrease with increasing frequency and increase with decreasing temperature. The rate of change depends greatly on the temperature and frequency ranges under consideration. Around room temperature, neither ε 1 nor ε 2 show any appreciable change through the whole range of frequencies. Thus, the dielectric dispersion is found to include of both dipolar and interfacial polarizations. The dependencies of both dielectric functions on frequency at different temperatures were found to follow a universal power law of the form ω n , where the index 0<n≤?1. This indicates that the correlated barrier hopping (CBH) model is a suitable mechanism to describe the dielectric behavior in ZnPc films. Furthermore, the results of the dielectric response indicate that polarization in these films could be in the form of non-Debye polarization. However, the Debye polarization can be traced below room temperature. The obtained results of the relaxation-time, τ, dependency on temperature have shown that a thermally-activated process may be dominated in ZnPc thin films conduction at high temperatures. Partial phase transition (from α- to β-phase) has been observed around 400 K in molecular relaxation-time, τ, and optical dielectric constant, ε . Arrhenius behavior has been observed for all the dielectric loss and conductivity relaxation-times above room temperature and their activation energies are explained and reported. The optical dielectric constant ε was found to increase with temperature.  相似文献   

20.
The results are presented for the charge asymmetry of the Dalitz plot parameters g, h, and k measured for K ±π ± π 0 π 0 decays. The experiment has been carried out in the 35-GeV/c kaon beams at the IHEP accelerator. The g, h, and k parameters appear to be identical for K + and K ? decays within the experimental uncertainty. In particular, a value of (0.2 ± 1.9) × 10?3 is obtained for the charge asymmetry A g = (g + ? g ?)/(g + + g ?) of the Dalitz plot slope.  相似文献   

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