共查询到20条相似文献,搜索用时 93 毫秒
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为了研究毫秒脉冲激光致硅基PIN光电二极管电学损伤,基于热传导及弹塑性力学理论,在光电二极管内部材料各向同性并且P-I-N三层结构之间满足温度连续和热流平衡条件下,建立毫秒脉冲激光辐照硅基PIN光电二极管二维轴对称模型,采用有限元方法模拟分析了1064 nm Nd:YAG毫秒量级脉冲激光辐照硅基PIN光电二极管的温度场与应力场分布,并实验测量了硅基PIN光电二极管实验前后的电学参数.结果表明,激光辐照硅基PIN光电二极管时,温升使材料表面熔融、烧蚀,并且在空间上存在温度梯度变化,即激光辐照产生的热与应力使光敏面及硅晶格晶键损伤,最终造成光电探测器的探测性能下降.研究结果可为毫秒脉冲激光辐照硅基PIN光电二极管电学损伤机理奠定基础. 相似文献
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本文报道了AgGaS_2晶体Ⅱ类非共线相位匹配Q开关Nd:YAG激光泵浦CO_2激光参量上转换研究结果,用迭代法计算了相位失配因子△K=0时的最佳非共线夹角.当泵浦功率密度为6MW/cm~2和晶体长度为4.7mm时,功率转换效率达16.1%,并且首次采用硅雪崩光电二极管接收和频信号. 相似文献
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在一定条件SF6气体氛围中,硅可在飞秒激光辐照区产生m量级的尖峰结构。针对不同尖峰高度的微构造硅,在不同温度下退火,采用电子蒸发的方法在正反面分别镀上铝电极,制备出了飞秒激光微构造光电二极管,并测试了其光电响应。实验结果表明:飞秒激光微构造光电二极管的响应随微构造硅光电二极管的尖峰高度和退火温度的不同而不同。尖峰高度为3~4 m的样品在973 K温度退火30 min后,响应度可达0.55 A/W。即使在1100 nm波长处,这种新型的硅光电二极管的响应仍可高达0.4 A/W。 相似文献
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基于波长位移光纤(WSF)耦合YAP晶体中的光子传输特性,用GEANT4软件包建立了一个蒙特卡罗模拟程序.对采用波长位移光纤耦合平板式YAP晶体的小型单管γ相机的性能进行了计算机模拟.采用波长位移光纤耦合光电倍增管光阴极面的读出方式,和晶体直接耦合光电倍增管光阴极面相比,在相同的晶体面积大小条件下,PSPMT光阴极面积可大大缩小,使费用降低.模拟结果表明:γ射线与晶体发生作用的地方所对应的光纤输出的平均光子数最少为15个,位置灵敏光电倍增管完全可以探测到.说明采用闪烁晶体-WSF-位置灵敏光电倍增管的读出方式是可行的;在用硅油耦合波长位移光纤和YAP晶体的情况下,获得的空间分辨率为1.28 mm(FWHM).模拟结果也说明了增加平均光子数对提高空间分辨率的重要性. 相似文献
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分别采用MOTORULA公司的硅基光电二极管探测器和JUDSON公司的InGaAs光电二极管探测器对泵浦光和信号光的脉宽进行了测量.研究了极化周期、工作温度以及抽运功率与周期极化掺镁铌酸锂光学参量振荡器输出的信号光脉冲宽度的作用关系.实验采用LD端面抽运的声光调QNd:YVO4激光器作为抽运源,在晶体温度为30℃、极化周期为29.5μm条件下,当抽运功率为1008mW时,获得了平均功率为238mW的信号光输出,其光-光转换效率为23.6%,最窄脉冲宽度约为9.3ns,相对抽运光脉宽被明显压窄. 相似文献
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光电耦合器是一种光电结合的器件,它由两部分组成:输入端由发光器件组成;输出端由光接收器件组成.目前国内外的光电耦合器输入端大都使用发光二极管——砷化镓发光二极管,输出端大都使用硅光电二极管或硅光敏三极管,结构见图1. 相似文献
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Aruev P. N. Belik V. P. Zabrodskii V. V. Kruglov E. M. Nikolaev A. V. Sakharov V. I. Serenkov I. T. Filimonov V. V. Sherstnev E. V. 《Technical Physics》2020,65(8):1333-1339
Technical Physics - We have designed a silicon avalanche photodiode for detecting vacuum ultraviolet radiation. The external quantum yield of a silicon avalanche photodiode has been investigated in... 相似文献
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Self-calibration experiment of silicon photodiodes in the soft X-ray spectral region of synchrotron radiation (50—2000eV) is carried out. Because of elimination of “dead region” and adoption of very thin SiO2 layer as window of the silicon photodiode, a simple model can be used to analyze the process. Based on parameters measured by experiment, the quantum efficiency of the silicon photodiode is calculated, and the flux of incident synchrotron radiation is also obtained. 相似文献
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激光等离子体软X射线光源光谱强度测量方法 总被引:11,自引:1,他引:10
提出了一种新的探测和测量激光等离子体软X射线源光谱强度的方法。该方法使用通道电子倍增器和定标过的硅光电二极管为探测器 ,前者是非标准探测器 ,后者为标准探测器。应用电荷灵敏前置放大器测量探测器产生的电量 ,并以高分辨率的光谱仪为分光元件 ,在已知光栅效率、通道电子倍增器增益、硅光电二极管能量响应的条件下 ,给出了计算激光等离子体软X射线源在某一波长光谱强度的公式 相似文献
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A multi-beam module using optical waveguides has been studied for a laser scanning optical system. Laser diodes with a wavelength of 780 nm are assembled on a silicon substrate. The beams emitted from the laser diodes are directly coupled into waveguides. This multi-beam module is assembled on a metal substrate with a photodiode. The photodiode controls the power of each laser diode on the silicon substrate. The multi-beam module is able to increase the output speed of high-density image printings, and the speed for high-speed color printings. We have developed the four-beam module with beam divergence angles of 11 degrees and spatial beam interval of 24 μm. Additional heat sink and optimizing tip-bonding between the laser diode and solder pad on the silicon substrate is useful to stabilize laser power against rising temperature. 相似文献
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实现光辐射度量基准的几种方法 总被引:2,自引:0,他引:2
总结实现光辐射度量基准的几种主要方法,包括黑体辐射器法、电替代绝对辐射计法、自校准硅光电二极管法和光电探测器量子效率绝对测量法。并对各种方法的优缺点进行比较。 相似文献
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We have fabricated a 32 × 32 silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) active pixel image
sensor with a pinned photodiode on a handle wafer. The structure of one pixel is a four-transistor type active pixel sensor
(APS) which consists of a reset and a source follower transistor on a seed wafer, and is comprised of a photodiode, a transfer
gate, and a floating diffusion on the handle wafer. The photodiode could be optimized for better quantum efficiency and low
dark currents because its process on the handle wafer is independent of that of transistors on a seed wafer. Most of the wavelengths
are absorbed within the visible range, because the optimized photodiode is located on the handle wafer. The image has been
captured by the fabricated 32 × 32 SOI CMOS image sensor with array pixels, vertical scanner, horizontal scanner, and delta-difference
sampling circuit. 相似文献
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A novel profilometry method based on two-photon absorption in a silicon avalanche photodiode is proposed. This method has a wide dynamic range, from millimeters to tens of meters. The principle is experimentally confirmed with a fiber-optic Mach-Zehnder interferometer. 相似文献
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The results of an investigation into the photoconductivity of amorphous silicon films at low excitation levels are given. The number of peculiarities are explained by nonuniformity of the semiconducting layer and also by the presence of a photodiode effect in the zones adjacent to the electrodes. 相似文献