High speed and wide temperature range uncooled 1.3-μm ridge waveguide DFB lasers

A 1.3-μm wavelength vertical-mesa ridge waveguide mulitple-quantum-well （MQW） distributed feedback （DFB） laser with high directly modulated bandwidth and wide operation temperature range is reported. With the optimization of the strained-layer MQWs in the active region, the surrounding graded-index separated-confinement-heterostructure waveguide layers, together with the optimization of the detuning and coupling coefficient of the DFB grating, high directly modulation bandwidth of 16 GHz at room temperature and wide working temperature range from -40 to 85 ℃ are obtained. The mean time to failure （MTTF） is estimated to be over 2×10^6 h. The device is suitable as light source of high-bit-rate optical transmitters with small size and reduced cost.     

Generation of optical waveforms in 1.3-μm SOA-based fiber lasers

Passive optical waveform generation is obtained in fiber lasers using a 1.3-μm semiconductor optical amplifier (SOA) as the gain medium. Various waveforms, including square wave, staircase wave, triangular wave, pulse, and dark pulse are generated in SOA-based fiber lasers by adjusting intracavity polarization controllers. The passive waveform generation might be attributed to the SOA gain dynamics and the enhanced nonlinear interaction at the 1.3-μm zero dispersion wavelength of traditional single-mode fiber (SMF), as well as the interference effect between the two sub-cavities of fiber laser. With figure-8 cavity configuration, 1250th-order harmonic pulses have been successfully demonstrated. We have also obtained a free-running SOA-based fiber laser with 3-dB spectral width of 16 nm, and the center wavelength can be tuned over 45 nm range.     

PbS-doped phosphate glasses saturable absorbers for 1.3-μm neodymium lasers

Passive mode locking and saturable absorber Q-switching of neodymium lasers at 1.3 μm with PbS-doped phosphate glasses are demonstrated. Q-switched pulses of 120 ns (0.1 μJ) in duration (energy) and the average output power of 3 mW from a quasi-cw diode-pumped Nd³⁺:KGW laser and ultrashort pulses of a maximum of 250 μJ in energy and 150 ps in duration from a Nd³⁺:YAP laser were obtained. The bleaching decay rate of the samples was found to increase with the Quantum Dot’s size decreasing due to the enhancement of quantum confinement effects for smaller dots and stronger overlapping of the electron and trap state wave functions. Received: 23 January 2002 / Revised version: 2 April 2002 / Published online: 20 December 2002 RID="*" ID="*"Corresponding author. Fax: +375-17/232-6286, E-mail: savitski@eudoramail.com     

High output power operation of 1.3-μm strained MQW lasers with low threshold currents at high temperature

We have investigated the temperature dependencies of the slope efficiency and the threshold current for strained multiquantum well (MQW) lasers as a parameter of the well number. Smaller well numbers mean larger temperature dependencies of the slope efficiency and the threshold current, while larger well numbers mean larger internal loss and broadening of the photoluminescence linewidth of the MQW structure. Furthermore, the change in the slope efficiency with temperature change is related to the change in internal loss. In this work, the 1.3-m strained MQW laser with a compressive strain of 1.0% and 7 wells shows the highest output power of 6.8 mW for an injection current of 50 mA and the lowest threshold current of 5.5 mA at 85°C, and the lowest variation in output power of 2.0 dB from 25–85°C at injection current of 50 mA.     

Actively mode-locked 1.3 and 1.55 μm InGaAsP diode lasers

Active mode-locking of uncoated InGaAsP diode lasers having an external diffraction grating cavity was investigated experimentally. A high frequency r.f. signal and short-duration electrical pulses were used to drive the lasers. The pulse duration was measured by an ultrafast streak camera. Pulses as short as 13 ps at 1.3m and 29 ps at 1.55m were generated at a repetition rate of 1 GHz. The reason for obtaining broader pulses from the 1.55m laser which had the same structure as the 1.3m diode laser is explained.Formerly with GEC Hirst Research Centre, Wembley, Middlesex, UK.     

A comparison of algainas and InGaAsP-based 1.3 μm semiconductor lasers using high pressure

Abstract

We have compared the effect of hydrostatic pressure on the threshold current, I_th, and lasing energy, E_lase, of 1.3 pm quantum-well devices based upon AlGaInAs and InGaAsP. Whilst we observe a very similar dependence of E_lase on pressure for the two materials, we measure strikingly different variations of I_th. By applying pressure to 1.3 μm InGaAsP lasers, I_th typically decreases by ～ 10% over 1 GPa consistent with the reduction of Auger recombination, which forms ～ 50% of I_th at room temperature. However, for the 1.3 μm AlGaInAs-based lasers, we observe an increase in I_th by ～ 8% over the same pressure range. From these results we conclude that non-radiative recombination accounts for only ～ 20% of I_th in AlGaInAs-based devices. This is in good agreement with previous temperature dependence measurements and shows why AlGaInAs-based devices exhibit a reduced temperature sensitivity of I_th which is very important for telecommunications applications.     

High performance of 1.55 μm DFB integrated with vertically tapered self-aligned spot-size converter

A new type of self-aligned spotsize converter (SSC) integrated 1.55 m DFB lasers had been proposed in this article. The upper optical confinement layer and the butt-coupled tapered thickness waveguide were regrown simultaneously, which not only offered the separate optimization of the active region and the integrated SSC, but also reduced the difficulty of the butt-joint selective regrowth. The vertical and horizontal far field angles were 9° and 12° respectively, the 1- dB misalignment tolerance were both 3.6 and 3.4 m. The directed coupling efficiency to tapered single mode fiber was 48%.     

Threshold simulation of 1.3-μm oxide-confined in-plane quantum-dot (InGa)As/GaAs lasers

In the paper, the self-consistent optical–electrical–thermal-gain model of the oxide-confined long-wavelength 1.3-m quantum-dot (InGa)As/GaAs diode laser is demonstrated. The model has been applied to analyse room-temperature (RT) threshold-operation characteristics of the advanced laser of this kind. It may be used to describe physics of the above arsenide-based diode lasers to better understand their threshold performance and finally to optimize their structures.     

Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber

Spectroscopic data of a V³⁺:YAG passive Q-switch crystal were measured. The absorption recovery time was determined to be of 37±7 ns and the ground state absorption cross section was estimated to be 0.7×10^-18 cm² at 1.44 μm and 3.5×10^-18 cm² at 1.34 μm. Passively Q-switched operation of diode pumped 1.44 μm and 1.3 μm Nd:YAG lasers was demonstrated using this crystal as saturable absorber. Average output powers of 1.42 W (1.44 μm) and 1.56 W (1.34 μm) and pulse energies of 24 μJ (1.44 μm) and 25 μJ (1.34 μm) were observed, respectively. Received: 19 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-40/42838-6281, E-mail: kretschmann@physnet.uni-hamburg.de     

Antimonide-based lasers and DFB laser diodes in the 2–2.7 μm wavelength range for absorption spectroscopy

We report on Fabry–Pérot semiconductor lasers and single frequency distributed feedback lasers based on GaInAsSb/AlGaAsSb quantum wells. The laser structures were grown by molecular beam epitaxy on GaSb substrates. The devices were etched either by wet process or by inductively coupled plasma (ICP) process. Electron-beam lithography was used to deposit a metal Bragg grating on each side of the laser ridge to fabricate the DFB lasers. The devices all operate in the continuous wave regime at room temperature with a single frequency emission above 2.6 μm and good tuning properties, making them well adapted to tunable diode laser absorption spectroscopy. PACS 42.55.Px; 42.62.Fi     

1.55 μm distributed feedback (DFB) lasers subject to strong 1.4 μm optical injection

An experimental analysis of the influence of optical injection at 1.4 μm wavelength into two different commercial 1.55 μm DFB lasers is reported. The results demonstrate the strong dependence of the DFB behaviour on the injection parameters. Complete mode suppression or signal amplification can be obtained by varying the excitation wavelength and/or intensity, suggesting that these devices could be operated as logic ports or signal amplifiers, according to the injected signal.     

Detection of HCl on the first and second overtone using semiconductor diode lasers at 1.7 μm and 1.2 μm

Sensitivity studies are also performed, to evaluate the minimum detectable concentration of HCl in air. Received: 7 August 1998/Revised version: 5 October 1998     

Suppression of laser noise in CW 337μm HCN lasers

In a d.c.-discharge-excited 337 μm HCN laser, amplitude laser noise has been observed at the frequency range of 30 kHz to 1 MHz. The laser noise is classified into three types; oscillation noise having sharp peaks, broadly distributed noise having a center frequency and 1/f-noise. Characteristics of the laser noise have been studied experimentally. The laser noise is caused by small oscillation which appears on d.c.-discharge current and by random fluctuations of current and plasma density. The laser noise has been suppressed more than 30 dB by adjusting the laser parameters such as discharge current, pressure and flow rates of mixed gas (CH4₄ + N₂ + He) and added He.     

Missing modes in 1.3 μm InGaAsP/InP uncooled Fabry–Perot lasers and their effect on transmission performance

We report mode missing and modal instability of uncooled Fabry–Perot (FP) lasers for the temperature range from –45 to 85C and their effect on transmission performance. Using the time domain laser model (TDLM), mode missing has been modeled in FP lasers with structural defects in the active layer. Using this model, we have estimated eye opening penalty (EOP) due to missing modes up to 2.5 Gbps data rate. These simulation results suggest that FP lasers should have less than two missing modes for stable operation and high performance for optical data links.     

Research on 2-μm solid-state lasers

Diode-pumped solid-state 2 μm lasers have rapid development for their efficient, compact and stable performance. In this paper, we will introduce and discuss the work on 2 μm solid-state-lasers. The advantages and disadvantages of four ways to realize 2 μm laser output are generalized and discussed.     

Influence of shifted phase value on the output spectra of DFB lasers with phase shifter

DFB lasers with π/2 phase shifter can run stably on single mode and providevery high side mode suppression ratio (MSR). This attractive feature may be degraded ifphase shift deviates from π/2. In this paper, we analyze theoretically how the output spectraand side mode suppression ratio are influenced by the deviation value of phase shift from π/2.     

Side-mode suppression characteristics of phase shifted DFB diode lasers

Previously developed method for analysis of phase shifted DFB lasers is improved by incoporating it with a multi-mode rate equation analysis. The spectral characteristics of phase shifted DFB lasers above threshold can thus be analyzed. This paper considers the side-mode suppression properties of phase shifted DFB laser versus phase shift, phase shift position and kL value under different facet coating conditions.     

Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μm quantum dot lasers

Systematic investigation of InAs quantum dot(QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots.By optimizing the growth rate, high quality InAs/GaAs quantum dots have been achieved.The areal quantum dot density is 5.9× 10~(10) cm~(-2), almost double the conventional density(3.0 × 1010 cm~(-2)).Meanwhile, the linewidth is reduced to 29 meV at room temperature without changing the areal dot density.These improved QDs are of great significance for fabricating high performance quantum dot lasers on various substrates.     

High peak power 1.0 μm and tri-wavelength 1.3 μm Nd:ScYSiO_5 crystal lasers

With a Nd:ScYSiO_5 crystal, a high peak power electro-optically Q-switched 1.0 μm laser and tri-wavelength laser operations at the 1.3 μm band are both investigated. With a rubidium titanyle phosphate(RTP) electro-optical switcher and a polarization beam splitter, a high signal-to-noise ratio 1.0 μm laser is obtained, generating a shortest pulse width of 30 ns, a highest pulse energy of 0.765 mJ, and a maximum peak power of 25.5 kW,respectively. The laser mode at the highest laser energy level is the TEM200 mode with the Mvalue in the X and Y directions to be M_x~2= 1.52 and M_y~2= 1.54. A tri-wavelength Nd:ScYSiO_5 crystal laser at 1.3 μm is also investigated. A maximum tri-wavelength output power is 1.03 W under the absorbed pump power of7 W, corresponding to a slope efficiency of 14.8%. The properties of the output wavelength are fully studied under different absorbed pump power.     

High efficiency beam combination of 4.6-μm quantum cascade lasers

The quantum cascade laser （QCL）, a potential laser source for mid-infrared applications, has all of the advantages of a semiconductor laser, such as small volume and light weight, and is driven by electric power. However, the optical power of a single QCL is limited by serious self-heating effects. Therefore, beam combination technology is essential to achieve higher laser powers. In this letter, we demonstrate a simple beam combination scheme using two QCLs to extend the output peak power of the lasers to 2.3 W. A high beam combination efficiency of 89% and beam quality factor of less than 5 are also achieved.