基于差动电容传感器和89C51单片机的电子水平仪

针对原有的气泡式水平仪功能存在的不足进行了改进,改进后的仪器采用了变介质差动电容传感器,设计了电容传感器变换电路,将传感器电容的变化转换为信号频率的变化,用89C51单片机对信号进行处理和显示.实验结果表明,该方法制作的电子水平仪系统性能稳定,测量精度可达到0.01 mm/m.     

引信用激光与加速度传感器复合定高技术

比较了不同类型的弹载定高体制,提出了脉冲激光与重力加速度传感器复合定高的定距原理,并对测距误差进行深入分析,得出其定高精度。对设计出的原理样机进行了实验测试,平台倾斜角度检测实验的结果表明,静态条件下最大角度误差小于0.3;0~500 m定高测试实验的结果表明,测量平均值与实际值最大误差为2.5 m,并且与目标距离无关。     

超导量子器件片上皮法电容的制备及测量

片上集成电容是超导量子芯片上的核心器件，其数值一般在百飞法(fF)至皮法(pF)范围.采用常规微纳加工技术在蓝宝石基片上制备了铌-氧化硅-铝(Nb/SiO₂/Al)平行板电容.利用刻蚀工艺制备了平行板电容器的下极板Nb,利用剥离工艺制备平行板电容器的上极板Al和介电层SiO₂.室温下利用锁相放大原理和桥式电路原理测定电容大小，两种方法测定电容值基本一致，表明锁相放大原理测试pF级电容的可靠性.利用该电容与铝基约瑟夫森结组成谐振器，制备了中心频率位于4.35 GHz的约瑟夫森参量放大器.在稀释制冷机中10 mK温度下测定直流偏置谐振器的磁通-频率相位图，拟合数据获得的电容值与室温测定电容值接近，表明在mK、GHz条件下工作的片上集成电容可在室温、kHz条件下测定其数值大小.     

小通道气液两相流电容测量方法研究

本文设计了一套用于小通道气液两相流的电容测量系统,并对内径为1.6 mm、2.5 mm和3.6 mm的玻璃管气液两相流进行了实验研究.文中首先对电容方法在小通道下的应用做了探索性尝试,设计了用于小通道气液两相流的电容传感器;然后利用所设计的电容传感器对小通道气液两相流弹状流电容动态数据进行采集、处理和分析;最后利用相关原理对气弹速度的测量进行了研究.研究结果表明所提出的电容方法可用于小通道气液两相流的分析研究中,是一种有效的小通道气液两相流参数检测手段,并为小通道两相流检测的研究提供了一定的借鉴.     

电容法浓度测量分析与自动配置设计

基于溶液浓度与其介电常数之间的关系，利用FDC2214电容传感器对以溶液为电介质的电容参数进行测量，实现了在不接触溶液的情况下，能够对溶液的浓度进行实时地测量。与此同时，基于比重法，利用压力传感器对溶液的质量参数的实时监测验证电容法的准确性，并最终设计了一套可实时且自动化测量溶液浓度与自动配置特定浓度溶液的装置。以葡萄糖溶液为例进行实验，并对实验结果和误差进行分析，得出测量误差保持在1%以内。相较于已有的方法和装置，本装置不仅更加方便和实用，还在造价低廉的基础上具备拓展性好的特点，可根据实际应用情境的需要增设其他功能，能够更广泛地服务生活、生产、教学和研究等。     

测量条干均匀度的平行板式电容传感器优化设计

条干均匀度一般是指纱线沿轴向粗细变化的均匀程度。检测纱线的微小变化对仪器灵敏度等指标提出了很高的要求,因此对电容传感器的结构尺寸进行优化设计是很有必要的。文章对平行板电容传感器检测纱线的原理进行了研究,并利用电磁场有限元分析软件ANSYS,构建了平行板式电容传感器三维模型,分析了传感器极板尺寸参数的变化对灵敏度和线性度两个优化指标的影响,提出多组传感器分段检测法,完成对电容传感器尺寸的优化。另外,针对平行板电容边缘发散电场对检测结果产生干扰的问题,提出等电位保护环法,并仿真验证其对电容传感器边缘效应的抑制作用。研究结果为平行板式电容传感器优化设计提供了依据。     

GaN发光二极管表观电容极值分析

利用正向交流(ac)小信号方法对GaN发光二极管的电容-电压特性进行测量,可以观察到GaN发光二极管中的负电容现象。正向偏压越大,测试频率越低,负电容现象越明显。测量到的负电容现象是表象,不存在负电容;提出GaN发光二极管p-n结的结电容在特定的正向电压范围内等效于可变电容。分析可变电容对正向交流小信号响应得到:特定参数的可变电容使结电容电流相位落后于交流小信号电压相位π/2,使得在测量中表现为负电容。发现表观电容-正向电压曲线的极值点与理论模型相吻合,证明了该理论模型的正确性。     

基于LabVIEW的微小电容测量

针对电容层析成像技术中的微小电容测量的问题,以数字相敏检波原理为基础,LabVIEW软件及NI采集卡为核心设计了微小电容测量系统。LabVIEW程序控制NI采集卡产生激励信号加在微小电容两端,C/V转换电路将其转换为电压信号,NI采集卡将采集的电压信号传送到PC机中,并在LabVIEW程序中通过数字相敏检波算法对数据进行处理及显示。最终,通过对数据进行线性化,得到相应的测量电容值。实验结果表明,该系统具有精度高,线性度好,稳定性好等优点,可以满足电容层析成像系统中对微小电容的测量的要求。     

磁悬浮振动传感系统及误差分析

利用磁悬浮技术设计一款惯性振动传感器,对传感系统进行受力分析,得出系统二阶运动方程;同时进行磁路分析得到系统刚度表达式,涡流分析得到系统的阻尼表达式,进而计算出传感系统的各部分参数,其刚度值为140 N/m,固有频率为11.2 Hz,阻尼为2.56 N·s/m;通过分析传感系统的温度误差与非线性误差,提出误差补偿方法:对温度误差进行热磁分流补偿,对非线性误差进行线圈补偿;标定得出传感器的灵敏度高达220 V·s·m-1;使用该传感器对爆炸冲击信号进行测量,实验结果表明该传感器能较好地描述爆炸振动信号;并且该传感器有灵敏度高、结构简单、防电磁干扰等优点。     

冲击电流计测量电容的实验中标准电容的取值对测量结果的影响

分析了利用冲击电流计测量电容的过程中产生误差的原因,着重讨论了标准电容的取值对测量结果的影响。结果表明:标准电容值与被测电容值的差值越小测量结果的误差也越小。     

An experimental set-up for the study of electromechanical properties of conducting polymer films

An experimental set-up have been designed and fabricated to study the electromechanical properties of a thick film of conducting polymer under load. Extension of the films versus voltage has been measured in terms of change in capacitance of parallel plate capacitor constituted by metal pan and a fixed metal plate. HP 4284A impedance analyzer measures absolute value of the capacitance. Change in capacitance is related to change in distance by pre-calibrating the assembly using traveling microscope. A computer programme is developed to convert the capacitance value with the corresponding distance and simultaneously plotting the graph between changes in length of polymer film versus applied voltage.The assembly has been used to study the electrochemomechanical behavior of solution cast polyaniline films (∼50 μ thick). During first cycle the length is enhanced by about 6% of original value, while repetitive value of extension is ≅2.8%, in subsequent cycles. This value closely matches to that reported in literatures.     

基于最小电压法的超声换能器谐振频率自动跟踪*

首先分析了最大电流法跟踪超声换能器谐振频率的原理及应用范围。研究了基于由串联电感和并联电容匹配电路下,不同频率时换能器两端电压电流的变化规律。研究表明在串联电感和并联电容匹配电路下发生谐振时,换能器两端的电压最小而电流并非最大。由此形成了采用最小电压法跟踪谐振频率的自动跟踪策略,并给出了该方法的具体实施步骤。论文研究结果为换能器谐振频率的自动跟踪方法提供了新的选择。     

同轴介质阻挡放电发生器介质层等效电容和负载特性研究

大气压介质阻挡放电(DBD)可以在常压下产生非平衡等离子体,已经成为热点研究领域.通过脉冲或交变电源激发放电,研究电源输出特性、电源与放电发生器负载间的匹配和外界条件对放电的影响对于理解放电现象和提高放电效率具有重要意义.本文采用Lissajous图形法,分别研究了驱动电压、气流速率等因素影响同轴DBD发生器介质层等效电容及负载幅频特性的规律.结果表明,气流速率和驱动电压等外界条件影响DBD发生器的负载特性:介质层等效电容随气流速率增大而减小,随驱动电压增大而增大;幅频特性曲线均表现出RLC回路谐振现象,谐振频率随气流速率增大而增大,随驱动电压增大而减小.通过对比发现,介质层等效电容随频率的变化曲线与幅频特性曲线具有一致的特征,介质层等效电容是影响电路谐振频率动态变化的主要因素.提出了一种有关介质层等效电容的形成机制.     

Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells

Negative capacitance(NC) in dye-sensitized solar cells(DSCs) has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carrier's transport layer is explored theoretically in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current(AC) recombination resistance(Rrac) and the direct current(DC) recombination resistance(Rrdc), which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage.     

Analytical base–collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator

The base--collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts. This paper proposes a novel analytical depletion capacitance model of this structure for the first time. A large discrepancy is predicted when the present model is compared with the conventional depletion model, and it is shown that the capacitance decreases with the increase of the reverse collector--base bias--and shows a kink as the reverse collector--base bias reaches the effective vertical punch-through voltage while the voltage differs with the collector doping concentrations, which is consistent with measurement results. The model can be employed for a fast evaluation of the depletion capacitance of an SOI SiGe HBT and has useful applications on the design and simulation of high performance SiGe circuits and devices.     

电容应变式压力传感器原理及检测电路设计

论述了电容应变式压力传感器的原理，给出了一种电容应变式压力传感器的电路，并分析了压力大小与电路输出电压之间的关系。     

Focal length measurement of a varifocal liquid lens with capacitance detection

This paper reports on a detailed deformation model of varifocal liquid lenses fabricated by Parylene-on-liquid-deposition (POLD), which can be applied to measure and adjust the focal length of such lenses without using extra sensors or sensing mechanisms. The lens was fabricated by encapsulating a liquid between a transparent electrode and a polymer film that was covered with a metal electrode. When voltage is applied to the two electrodes, the lens deforms due to the electrostatic force, and its focal length and the capacitance between the two electrodes change simultaneously. This characteristic enables the focal length of the lens to be adjusted and detected by measuring the capacitance change. The focal length of the fabricated varifocal liquid lens changed from 153.6 to 82.6 mm by applying 150-V. The focal length change of the liquid lens was calculated from the change in its capacitance. Finally, to confirm the efficiency of this varifocal liquid lens, we fabricated a confocal distance sensor using the lens for laser scanning and demonstrated that this system can be used to measure distances of 94–140 mm with an average error of 0.83 mm and a standard deviation of 0.77 mm.     

Band gap control of phononic beam with negative capacitance piezoelectric shunt

Periodic arrays of negative capacitance shunted piezoelectric patches are employed to control the band gaps of phononic beams. The location and the extent of induced band gap depend on the mismatch in impedance generated by each patch. The total impedance mismatch is determined by the added mass and stiffness of each patch as well as the shunting electrical impedance. Therefore, the band gap of the shunted phononic beam can be actively tuned by appropriately selecting the value of negative capacitance. The control of the band gap of phononic beam with negative capacitive shunt is demonstrated numerically by employing transfer matrix method. The result reveals that using negative capacitive shunt to tune the band gap is effective.     

双层压电结构超声波传感器的研究

为获得三频或宽频超声波传感器，本文提出了一种新型双层压电结构超声波传感器，文中从理论上分析研究了电容对其频率特性控制的原理，同时，在２ＭＨｚ频率范围进行了实测验证，理论与实测结果吻合较好。