Spot Shape on Super-Resolution Optical Disks with a Photon-Mode Mask Layer

The spot shape on super-resolution optical disks with a photon-mode mask layer was theoretically analyzed. The spot shape was found to depend on the lifetime of the bleached state of the dyes, the light power, and the disk rotation speed. When the lifetime is short, the super-resolution spot shape is not produced at high disk speeds. On the other hand, a dye mask layer with long lifetime, such as a photochromic mask, can produce a sharp spot shape in the higher disk speed region, and therefore is suitable for obtaining a super-resolution disk with a high data transfer rate.     

Theoretical Analysis of Photon-Mode Super-Resolution Optical Memory Using Saturable Absorption Dye

The possibility of a super-resolution optical memory using a saturable absorption dye mask layer is theoretically discussed. An equation which estimates the transmittance change of the mask layer has been derived. The numerical simulation shows that an efficient super-resolution is performed when the initial optical density of the mask layer is high.     

Super-Resolution with a Photochromic Mask Layer in an Optical Memory

The possibility of a super-resolution optical memory using a photochromic mask layer was theoretically discussed. An equation which estimates the transmittance change of the mask layer was derived. The numerical simulation based on the equation showed that the reflectance increase of the layer by photo-irradiation is nonlinear when the optical density of the layer is high. The nonlinear response decreased the crosstalk in adjacent recording tracks and improved the MTF (modulation transfer function) characteristics, resulting in a higher recording density.     

Super-resolution readout property of bismuth-doped antimony-based thin film as a functional mask for read-only memory

Bismuth-doped antimony-based (Sb_100?x Bi _x , x=2.46) thin films were presented as a functional mask for super-resolution readout of read-only memory (ROM). The pit size of the ROM was 390?nm, and super-resolution readout was realized on a dynamic tester with laser wavelength of 780?nm and the numerical aperture of the focusing objective lens of 0.45. The carrier-to-noise ratio (CNR) of 22?dB, readout threshold power of 0.8?mW and super-resolution readout cycles of 2×10⁴ was achieved. The influence of film thickness and readout power on CNR was investigated. The reflectivity and transmittance of the film with different temperature at wavelength of 780?nm were detected, and the super-resolution mechanism of the bismuth-doped antimony-based thin films as the functional mask layer was discussed.     

Mechano-chemical AFM nanolithography of metallic thin films: A statistical analysis

A mechano-chemical atomic force microscope (AFM) nanolithography on a metallic thin film (50 nm in thickness) covered by a spin-coated soft polymeric mask layer (50–60 nm in thickness) has been introduced. The surface stochastic properties of initial grooves mechanically patterned on the mask layer (grooves before chemical wet-etching) and the lithographed patterns on the metallic thin film (the grooves after chemical wet-etching) have been investigated and compared by using the structure factor, power spectral density, and AFM tip deconvolution analyses. The effective shape of cross section of the before and after etching grooves have been determined by using the tip deconvolution surface analysis. The wet-etching process improved the shape of the grooves and also smoothed the surface within them. We have indicated that relaxation of the surface tension of the deposited mask layer after the AFM scribing is independent from surface density of the grooves and also their length scale. Based on the statistical analysis, it was found that increase of the width of the grooves after the wet-etching and also relaxation of surface tension of the mask layer resulted in a down limit in the size of the metallic nanowires made by the combined nanolithography method. An extrapolation of the analyzed statistical data has indicated that, in this method, the minimum obtainable width and length of the metallic nanowires are about 55 nm and 2 μm, respectively.     

高迁移率非晶铟镓锌氧化物薄膜晶体管的制备与特性研究

由于铟镓锌氧化物(IGZO) 薄膜具有高迁移率和高透过率的特点, 它作为有源层被广泛的应用于薄膜晶体管(TFT). 本文利用磁控溅射方法制备了TFT的有源层IGZO和源漏电极, 用简单低成本的掩膜法控制沟道的尺寸, 制备了具有高迁移率、底栅结构的n型非晶铟镓锌氧化物薄膜晶体管 (IGZO-TFT). 利用X 射线衍射仪(XRD) 和紫外可见光分光光度计分别测试了IGZO薄膜的衍射图谱和透过率图谱, 研究了IGZO薄膜的结构和光学特性. 通过测试IGZO-TFT的输出特性和转移特性曲线, 讨论了IGZO有源层厚度对IGZO-TFT特性的影响. 制备的IGZO-TFT器件的场效应迁移率高达15.6 cm²·V^-1·s^-1, 开关比高于10⁷. 关键词： 非晶铟镓锌氧化物 薄膜晶体管 有源层     

亚微米AZO光栅及其漫透射分布特性

探讨亚微米掺铝氧化锌(AZO)光栅的漫透射光谱特性。在AZO薄膜上涂布光刻胶,用325nm激光双光束干涉曝光得到掩模图案。将其置于质量分数为0.5%的稀盐酸溶液中湿法刻蚀,制备出周期(780～1280nm)和高度(60～300nm)能独立调控的AZO一维光栅。正入射双向透射分布函数(BTDF)测试结果表明,400～900nm波段内平均镜面透射率随光栅周期增大而降低,与紫外-可见分光光度计测得的结果吻合;同时,周期越大被衍射到30°～80°范围内的漫透射比重和漫透射峰值均越大,而峰位角越小。根据光栅方程对实验结果给出了合理的解释。     

微型太阳敏感器光学掩模的镀膜设计

太阳敏感器是空间飞行器进行姿态确定和方位测定的重要器件，传统太阳敏感器大而重，无法应用到微小卫星特别是皮纳卫星上。介绍了基于CMOS APS探测器的微型太阳敏感器的工作原理，基于黑体辐射理论和太阳光谱特性，结合CMOS APS探测器工作特性，分析给出了这种敏感器像元表面产生光电子数的计算方法，并采用Matlab软件，编程计算了地球表面太阳垂直入射条件下，探测器像元表面产生的光电子数。采用光学薄膜设计方法，分析设计了掩模表面光学薄膜的膜系结构，计算了各膜层的透射特性。在此基础上，得到了基于CMOS APS探测器微型太阳敏感器光学掩模的光学薄膜的设计方法，最后给出了设计结果。     

Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes

We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.     

Approximation of the product error made in calculating atmospheric band transmittances

The error was modeled for the assumption that the band transmittance at the n+1st level in a layered atmosphere is the nth level band transmittance times the band transmittance through the nth layer. A good approximation of this error was found to be a power of the band transmittance at the nth level, with the exponent being a function of the temperature, pressure, gas densities, and the layer band transmittance of the nth layer. The model was tested using six standard atmospheric profiles at five frequencies. The r.m.s. error for the entire transmittance profiles for all tests was 0.00167.     

可用于光存储的氧化物、次氧化物薄膜材料的研究及发展

介绍了可用于可录、可擦除、全息光存储及超分辨掩膜层的氧化物、次氧化物薄膜材料的种类、制备方法、光存储特性和存储机制。这类薄膜材料由于具有种类多、应用范围广、制备方法多样、写入灵敏度高和记录稳定性好等优点 ,正受到各国研究者越来越多的关注。分析总结了这类材料的研究现状、存在的主要问题和未来发展方向     

一种简单高效的制备硅纳米孔阵结构的方法

本文介绍了一种简单高效的制备硅纳米孔阵结构的方法. 利用激光干涉光刻技术, 结合干法和湿法刻蚀工艺, 直接将光刻胶点阵刻蚀为硅纳米孔阵结构, 省去了图形反转工艺中的金属蒸镀和光刻胶剥离等必要步骤, 在2英寸的硅 (001) 衬底上制备了高度有序的二维纳米孔阵结构. 利用干法刻蚀产生的氟碳有机聚合物作为湿法刻蚀的掩膜, 以及在干法刻蚀时对样品进行轻微的过刻蚀, 使SiO₂点阵图形下形成一层很薄的硅台面, 是本方法的两个关键工艺步骤. 扫描电子显微镜图片结果表明制备的孔阵图形大小均匀, 尺寸可控, 孔阵周期为450 nm, 方孔大小为200–280 nm. 关键词： 激光干涉光刻 纳米阵列 刻蚀 氟碳有机聚合物     

利用金属掩模法制备钉扎型磁性隧道结

利用金属掩模法和Ir22Mn78合金反铁磁钉扎层，制备了四种钉扎型的Py/Al2O3/Py，Py/Al2O3/Co，Co/Al2O3/Py和Co/Al2O3/Co磁性隧道结，坡莫合金的成分为Py＝Ni79Fe21.例如：利用狭缝宽度为100?μm的金属掩模，直接制备出室温隧穿磁电阻比值为17.2%的磁性隧道结Co/Al2O3/Co，其结电阻为76Ω,结电阻和结面积的积矢为76×10_{4Ωμm2，自由层的偏转场为1114?A/m，并且在外加磁场0.1114A·m-1之间时室温磁电阻比值 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 金属掩模}     

Variable resolution with pupil masks

There are many applications in which pupil-plane masks are useful for point-spread-function (PSF) apodization or superresolution. A limitation of this technique is that once a mask is fabricated, the corresponding PSF characteristics are fixed. To overcome this drawback we introduce a technique for easily varying the performance of pupil-plane masks. This technique is based on the modification of the transmittance of each of the mask zones and, thus, can be implemented using a spatial light modulator or linear polarizers, e.g., we apply the technique to binary phase-only masks and we check that the figures of merit that characterize the PSF can be easily controlled. We study different configurations that allow us to modify resolution or peak intensity in a continuous way and we derive analytical expressions for these figures of merit.     

Imprint lithography of pyramidal photonic pillars using hydrazine etching

An inexpensive method to produce a pyramidal-type 2D photonic structures in the silicon substrate was proposed. The method is based on the combination of imprint lithography and wet Si1 0 0 etching in water solution of hydrazine, which etches 1 1 1 faces much more slowly than others. Thermally grown SiO₂ mask for the hydrazine etching was used, because single Al mask cannot be well bonded to the substrate and tends to peel during the etching. It was revealed that transmittance in the infrared spectrum region of the patterned silicon decreases by about five times compared with that of flat silicon substrate and this decrease is almost independent of the angle of the incident beam. In the infrared region, decrease of transmittance of the patterned samples is directly proportional to the wave number. The shape of formed pyramids has strong influence on the transmittance. Decrease of the transmittance is much more rapid and larger in the case of sharpless pillars.     

Calculation of the reflectance and transmittance of a disperse layer by the neural network method

A method for calculating the reflectance and transmittance, as well as the luminance factor of a light-scattering layer using radial basis function neural networks is developed. In the domain of variation of particles’ parameters, absolute errors of the calculation of the reflectance and transmittance are 4 × 10⁻⁴−10⁻³, which is comparable with the error of the calculation by the numerical layer adding method and is one or two orders of magnitude less than the errors in the calculation of the reflectance and transmittance by approximate Eddington formulas.     

Fabrication of an improved gray-scale mask for refractive micro- and meso-optics

An experiment was performed on a new gray-scale mask material. The mask material is carbon based and has high attenuation in the deep ultraviolet spectral range. The experiment involves making a gray-scale mask for an axicon. Preliminary results show that gray-scale profiles of accurate transmittance functions can be fabricated. Potentially, the capability at deep ultraviolet wavelengths will allow the fabrication of high-resolution components. The high-attenuation characteristic will allow the production of microscale and mesoscale optics of more phase levels.     

Static recording characteristics of new type super-resolution near-field structure

A novel super-resolution near-field optical structure (super-RENS) with bismuth (Bi) mask layer is proposed in this paper. Static optical recording tests with and without super-RENS are carried out using a 650-nm semiconductor laser at recording powers of 14 and 7 mW with pulse duration of 100 ns. The recording marks are observed by high-resolution optical microscopy with a charge-coupled device (CCD)camera. The results show that the Bi mask layer can also concentrate energy into the center of a laser beam at low laser power similar to the traditional Sb mask layer. The results above are further confirmed by another Ar+ laser system. The third-order nonlinear response induced by the plasma oscillation at the Bi/SiN interface during laser irradiation can be used to explain the phenomenon. The calculation results are basically consistent with our experimental results.     

聚合物阵列波导光栅的制作技术

研究了聚合物阵列波导光栅AWG制作的几个关键技术.首先,为了克服反应离子刻蚀过程中单独使用光刻胶作掩膜而导致的光波导形状和尺寸偏离设计的缺点,采用了光刻胶与金属掩膜相结合的双掩膜技术进行器件制作.详细介绍了双掩膜技术制备聚合物AWG的过程,并得出铝膜作为掩膜的最佳厚度为100nm左右.测试给出了使用和没有使用双掩膜的对比结果,该结果表明使用双掩膜技术制作的波导质量明显好于单独使用光刻胶作掩膜制作的结果.其次,采用蒸气回溶技术来减小反应离子刻蚀产生的波导表面和侧壁的起伏,从而降低了波导的散射损耗.结果表明,蒸气回溶技术使所制作的波导表面的均方根粗糙度从41.307nm降低到24.564nm.     

Read—out of a read—only super—resolution optical disc with a Si mask

A novel read-only super-resolution optical disc structure (substrate/mask layer/dielectric layer) is proposed in this paper. By using a Si thin film as the mask layer, the recording pits with a diameter 380nm and a depth 50nm are read out on the dynamic measuring equipment; the laser wavelength α is 632.8nm and the numerical aperture is 0.40. In the course of reproduction, the laser power is 5mW and the rotation velocity of the disc is 4m·s^-1. The optimum thickness of the Si thin film is 18nm and the signal-to-noise ratio is 32dB.