低能原子沉积在Pt(111)表面的分子动力学模拟

采用嵌入原子方法的原子间相互作用势,利用分子动力学方法模拟了六种贵金属原子(Ni,Pd,Pt,Cu,Ag,Au)分别在Pt(111)表面低能沉积的动力学过程.结果表明:随着入射能量从0.1eV升高到200eV,基体表面原子是按层迁移的,沉积过程对基体表面的影响和沉积原子在基体表层的作用均存在两个转变能量(ET1≈5eV,ET2≈70eV).当入射能量低于5eV时,基体表面几乎没有吸附原子和空位形成,沉积原子在基体表层几乎没有注入产生;当入射能量在5—70eV范围内时,沉积原子在基体表层有注入产生,其注入深度小于两个原子层,即为亚注入,此时吸附原子主要由基体表层原子形成,基体表面第三层以下没有空位形成;当入射能量高于70eV时,沉积原子的注入深度大于两个原子层,将会导致表面以下第三层形成空位,并且空位产额随入射能量的升高而急剧增加.基于分子动力学模拟的结果,对低能沉积作用下的薄膜生长以及最优沉积参数的选择进行了讨论.     

低能单个Cu原子与Cu13团簇沉积到Fe（001）表面的比较

本文利用分子动力学模拟方法对相同初始沉积条件下的单个Cu原子和Cu13团簇与Fe(001)表面的相互作用分别进行了模拟研究, 并将两者的模拟结果进行了比较分析. 单个Cu原子和Cu13团簇的初始入射能量范围均为1eV/atom、3eV/atom、5eV/atom和10eV/atom, 初始入射角度均为0o、10o、30o和45o, 衬底温度分别为100K、300K和800K. 对单个Cu原子和Cu13团簇的原子动能、质心高度、迁移距离和最终沉积形貌进行了分析, 对比研究了相同初始沉积条件下单个Cu原子和Cu13团簇在沉积过程中和沉积效果上的具体差异. 模拟结果表明: 单个Cu原子和Cu13团簇与Fe(001)表面的相互作用机制存在差异, Cu13团簇表现出显著的集体效应. 在特定沉积条件下, 由于Cu13团簇的集体效应, 导致Cu13团簇与Fe(001)表面的结合能力和在Fe(001)表面上的扩散能力均强于单个Cu原子.     

入射能量对Au/Au(111)薄膜生长影响的分子动力学模拟

利用分子动力学模拟了Au原子在Au(111)表面低能沉积的动力学过程.采用嵌入原子方法的原子间相互作用势,通过对沉积层原子结构的分析和薄膜表面粗糙度、层覆盖率的计算,研究了沉积粒子能量对薄膜质量的影响及其机制.结果表明:当入射能量Ein25 eV时,沉积层和基体表层均呈现规则的单晶面心立方(111)表面的排列,沉积原子仅注入到基体最表面两层,随着入射能量的增加,薄膜表面粗糙度降低,薄膜越趋于层状生长,入射能量的增加有利于薄膜的成核和致密化;当Ein 25 eV时,沉积层表面原子结构出现了较为明显的晶界,沉积原子注入到基体表面第三层及以下,随着入射能量的增加,薄膜表面粗糙度增加,沉积层和基体表层原子排列越不规则,载能沉积会降低基体内部的稳定性,导致基体和薄膜内部缺陷的产生,降低薄膜质量.此外,当基体内部某层沉积原子数约等于该层总原子数的一半时,沉积原子将能穿过该层进入到基体内部更深层.     

替位杂质对低能Pt原子与Pt(111)表面相互作用影响的分子动力学模拟

采用嵌入原子方法的原子间相互作用势，通过分子动力学方法模拟了低能Pt原子与Cu，Ag，Au，Ni，Pd替位掺杂Pt(111)表面的相互作用过程，系统研究了替位原子对表面吸附原子产额、溅射产额和空位缺陷产额的影响规律，分析了低能沉积过程中沉积原子与基体表面的相互作用机理以及替位原子的作用及其影响规律.研究结果显示：替位原子的存在不仅影响着沉积能量较低时的表面吸附原子的产额与空间分布，而且对沉积能量较高时的低能表面溅射过程和基体表面空位的形成产生重要影响.替位原子导致的表面吸附原子产额、表面原子溅射以及空位形 关键词： 分子动力学 低能粒子 替位掺杂 表面原子产额 溅射 空位     

Pt(111)表面低能溅射现象的分子动力学模拟

利用嵌入原子方法的原子间相互作用势，通过分子动力学模拟，详细研究了贵金属原子在Pt (111)表面的低能溅射现象.模拟结果显示：对于垂直入射情况，入射原子的质量对Pt (11 1)表面的溅射阈值影响不大.当入射原子的能量小于溅射阈值时，入射原子基本以沉积为主 ；当入射原子的能量大于溅射阈值时，溅射产额随入射原子能量的增加而线性增大；当入射 原子能量达到200 eV时，各种入射原子的溅射产额都达到或接近1，此时入射原子主要起溅 射作用.溅射原子发射的角分布概率和溅射花样与高能溅射相类似.研究表明：与基于二体碰 撞近似的线性级联溅射理论不同，当入射原子能量大于溅射阈值时，低能入射原子的溅射产 额正比于入射原子的约化能量和入射原子与基体原子的质量比.通过对低能入射原子的钉扎 能力分析，提出了支配低能溅射的入射原子反射物理机理. 关键词： 分子动力学模拟、低能溅射     

低能单个Cu原子与Cu_(13)团簇沉积到Fe(001)表面的比较研究

本文利用分子动力学模拟方法对相同初始沉积条件下的单个Cu原子和Cu_(13)团簇与Fe(001)表面的相互作用分别进行了模拟研究,并将两者的模拟结果进行了比较分析.单个Cu原子和Cu_(13)团簇的初始入射能量范围均为1 e V/atom、3 e V/atom、5 e V/atom和10 e V/atom,初始入射角度均为0°、10°、30°和45°,衬底温度分别为100 K、300 K和800 K.对单个Cu原子和Cu_(13)团簇的原子动能、质心高度、迁移距离和最终沉积形貌进行了分析,对比研究了相同初始沉积条件下单个Cu原子和Cu_(13)团簇在沉积过程中和沉积效果上的具体差异.模拟结果表明:单个Cu原子和Cu_(13)团簇与Fe(001)表面的相互作用机制存在差异,Cu_(13)团簇表现出显著的集体效应.在特定沉积条件下,由于Cu_(13)团簇的集体效应,导致Cu_(13)团簇与Fe(001)表面的结合能力和在Fe(001)表面上的扩散能力均强于单个Cu原子.     

C2团簇在金刚石(111)表面吸附结构的分子动力学模拟

利用Brenner(#2)半经验多体相互作用势和分子动力学模拟方法研究荷能的C₂在金刚石(111)表面的化学吸附过程.模拟300 K时,初始入射动能分别为1,20,30 eV的C₂团簇从6个不同位置轰击金刚石(111)表面,观察到C₂团簇在金刚石(111)表面形成的吸附结构,表面C原子键的打开以及C₂团簇与表面C原子成键等物理过程,并讨论不同入射位置和入射能量对沉积团簇的结构特性的影响.结果表明,对于表面不同的局部构型,C₂团簇发生不同的碰撞过程,C₂团簇入射能量的提高有利于成键过程的发生,从原子尺度模拟沉积机制.     

低能Pt原子与Pt(111)表面相互作用的分子动力学模拟

利用分子动力学模拟方法详细研究了低能Pt原子与Pt(111)表面的相互作用所导致的表面吸附原子、溅射原子、表面空位的产生及分布规律,给出了表面吸附原子产额、溅射原子产额和表面空位产额随入射Pt原子能量的变化关系.模拟结果显示:溅射产额、表面吸附原子产额和表面空位产额随入射原子的能量的增加而增加,溅射原子、表面吸附原子的分布花样呈3度旋转对称性质;当入射粒子能量高于溅射阈值时,表面吸附原子主要是基体最表面原子的贡献,入射粒子直接成为表面吸附原子的概率很小.其主要原因是:当入射粒子能量高于溅射能量阈值时,入射 关键词： 分子动力学 低能粒子 表面原子产额 空位缺陷 溅射     

分子动力学模拟Cu(010)基体对负载Co-Cu双金属团簇熔化过程的影响

纳米团簇负载到基体上的结构演化和热稳定性是其走向技术应用的关键. 本文用分子动力学结合嵌入原子方法模拟了具有二十面体初始结构的Co₂₈₁Cu₂₈₀ 混合双金属团簇在Cu(010)基体上的熔化过程, 考察了基体的Cu原子可以自由移动(自由基体)和固定(固定基体)两种条件对负载团簇熔化的影响. 发现基体条件对团簇的熔化有明显的影响. 在自由基体上团簇原子的温度-能量曲线存在明显的团簇熔化时的能量突变点, 熔点为1320 K, 低于固定基体上团簇的熔点1630 K. 在升温过程中团簇的二十面体结构会在基体表面发生外延生长. 外延团簇随着温度增加发生表面预熔, 预熔原子会逐渐向基体表面扩散形成薄层, 直至完全熔化. 自由基体上团簇原子的嵌入行为会使原子的分布状态产生不同于固定基体上的演变.     

低温下Cu13团簇负载于Cu(001)表面上结构变化的分子动力学研究

应用分子动力学方法研究温度为10和50 K时具有二十面体结构的Cu₁₃团簇以不同接触条件与Cu（001）表面结合后的结构变化,原子间的相互作用势采用Johnson的嵌入原子方法模型.通过基于原子密度分布函数的分析表明,负载团簇与表面的结合能主要受团簇与载体相接触的最低层原子数及这些原子所具有的不同几何构型影响,同时更高层的原子呈现出不同的几何结构.温度为10 K时,负载团簇的初始位置对团簇几何结构和结合能影响较大. 关键词： 分子动力学 团簇 表面 计算机模拟     

低能CU6团簇在CU(001)表面和AU(001)表面沉积的分子动力学模拟研究

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Atomistic study of deposition process of Al thin film on Cu substrate

In this paper we report molecular dynamics based atomistic simulations of deposition process of Al atoms onto Cu substrate and following nanoindentation process on that nanostructured material. Effects of incident energy on the morphology of deposited thin film and mechanical property of this nanostructured material are emphasized. The results reveal that the morphology of growing film is layer-by-layer-like at incident energy of 0.1-10 eV. The epitaxy mode of film growth is observed at incident energy below 1 eV, but film-mixing mode commences when incident energy increase to 10 eV accompanying with increased disorder of film structure, which improves quality of deposited thin film. Following indentation studies indicate deposited thin films pose lower stiffness than single crystal Al due to considerable amount of defects existed in them, but Cu substrate is strengthened by the interface generated from lattice mismatch between deposited Al thin film and Cu substrate.     

Ag-Co clusters deposition on Ag(100): an atomic scale study

The slowing down of Co₁₀Ag₁₉₁ and Co₂₈₅Ag₃₀₁ nanoclusters on a Ag (100) surface is studied at the atomic scale by means of classical Molecular Dynamics simulations. The slowing down energy, 0.25 to 1.5 eV/atom, is characteristic of low energy cluster beam deposition and aerosol focused beam techniques. The two clusters differentiate by their size, stoechiometry and structure. While Co forms one or several groups just beneath the cluster surface in Co₁₀Ag₁₉₁, Co₂₈₅Ag₃₀₁ displays a core-shell structure where Ag forms one complete monolayer around the Co core. As a consequence of the impact, the smallest cluster undergoes deep reorganization and becomes fully epitaxial with the substrate. The larger one only undergoes partial accommodation and partially retains the memory of its initial morphology. For both, after impact, the Co forms one group covered by Ag. The substrate damage is significant and depends on the slowing down energy. It results in a Ag step surrounding the cluster which may be more than one atomic layers high and isolated add-atoms or small monolayer islands apart from the step. The latter originate from the cluster and the former from the substrate. Further details in the consequences of the impact are given, concerning the cluster penetration, its deformation and lattice distortions, with emphasis on the cluster size and stoechiometry.Received: 11 June 2004, Published online: 31 August 2004PACS: 35.40.-c - 61.46. + w Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals - 07.05.Tp Computer modeling and simulation     

低能Cu原子簇沉积薄膜的分子动力学模拟

用分子动力学计算机模拟研究了能量为5—20eV/atorn,结构为正二十面体的(Cu)₁₃原子簇在Cu（001）表面的沉积过程.采用紧束缚势同Moliers势的结合描述Cu原子间相互作用通过原子簇-衬底相互作用的“快照”研究沉积的动态过程．结果表明,当入射能量较低时,轰击弛豫后,入射原子簇在衬底表面发生重构,生成很好的外延层,靶没有任何损伤．随着轰击能量的增加,原子簇原子穿入靶的深度增加.当入射能量达到20eV/atom时,原子簇完全穿入靶并开始造成辐照损伤,表面出现空位,靶内产生间     

递归法研究Pt对Ti合金腐蚀影响

采用递归法计算了Ti及Ti合金的电子态密度、环境敏感镶嵌能、费米能级和格位能等电子结构参量.计算发现Pt在晶体中环境敏感镶嵌能和格位能高于表面,从电子层面证实Pt易在 Ti合金表面偏聚.偏聚在表面的Pt有序能为正值,故Pt以有序相（Pt与Ti的化合物）形式分布在合金表面.晶体表面Pt 与Ti的化合物电极电位较低,它与Ti形成微电池.在腐蚀介质的作用下,Pt与Ti的化合物分解,Pt沉淀到晶体表面造成Pt在合金表面形成凹凸不平的Pt电催化层.Pt电催化层加强Ti钝化作用,从而提高了Ti合金的抗腐蚀能力. 关键词： 电子结构 Ti合金表面 钝化     

低能Cu13团簇沉积薄膜的分子动力学模拟研究

利用分子动力学模拟方法对Cu₁₃团簇在Fe（001）表面上沉积薄膜进行了研究,分析了不同沉积条件对薄膜生长模式的影响,对比分析了不同沉积条件下表面粗糙度、缺陷分布和外延度等薄膜性质的差异。Cu₁₃团簇的初始沉积能量范围为0.1~10.0 eV/atom,沉积率为1.0 clusters/ps,衬底温度分别为300,700和1 000 K。模拟结果表明:团簇初始沉积能量主要影响薄膜生长模式,当初始沉积能量为7.5 eV/atom的Cu₁₃团簇沉积到温度为300 K的Fe（001）表面时,可形成表面光滑、内部缺陷少和较好外延度的高质量Cu薄膜。     

In situ scanning tunneling microscopy studies of bimetallic cluster growth: Pt-Rh on TiO2(1 1 0)

The growth of Pt on clusters on TiO₂(1 1 0) in the presence and absence of Rh was investigated by scanning tunneling microscopy (STM) for Pt deposited on top of 0.3 ML Rh clusters (Rh + Pt). In situ STM studies of Pt growth at room temperature show that bimetallic clusters are produced when Pt is directly incorporated into existing Rh clusters or when newly nucleated clusters of pure Pt coalesce with existing Rh clusters. Low energy ion scattering experiments demonstrate that Rh is still present at the surface of the clusters even after deposition of 2 ML of Pt, indicating that Rh atoms can diffuse to the cluster surface at room temperature. Rh clusters were found to seed the growth of Pt clusters at room temperature as well as 100 K and 450 K. Furthermore, clusters as large as 100 atoms were observed to be mobile on the surface at room temperature and 450 K, but not at 100 K. Pt deposition at 100 K exhibited more two-dimensional cluster growth and higher cluster densities compared to room temperature experiments due to the lower diffusion rate. Increased diffusion rates at 450 K resulted in more three-dimensional cluster growth and lower densities for pure Pt growth, but cluster densities for Pt + Rh growth were the same as at room temperature.     

Processes involved in the formation of silver clusters on silicon surface

We analyze scanning electron microscopy measurements for structures formed in the deposition of solid silver clusters onto a silicon(100) substrate and consider theoretical models of cluster evolution onto a surface as a result of diffusion and formation of aggregates of merged clusters. Scanning electron microscopy (SEM) data are presented in addition to energy dispersive X-ray spectrometry (EDX) measurements of the these films. Solid silver clusters are produced by a DC magnetron sputtering source with a quadrupole filter for selection of cluster sizes (4.1 and 5.6 nm or 1900 and 5000 atoms per cluster in this experiment); the energy of cluster deposition is 0.7 eV/atom. Rapid thermal annealing of the grown films allows analysis of their behavior at high temperatures. The results exhibit formation of cluster aggregates via the diffusion of deposited solid clusters along the surface; an aggregate consists of up to hundreds of individual clusters. This process is essentially described by the diffusion-limited aggregation (DLA) model, and thus a grown porous film consists of cluster aggregates joined by bridges. Subsequent annealing of this film leads to its melting at temperatures lower than to the melting point of bulk silver. Analysis of evaporation of this film at higher temperatures gives a binding energy in bulk silver of ɛ₀= (2.74 ± 0.03) eV/atom. The text was submitted by the authors in English.     

Molecular dynamics simulation of Pt on a vitreous silica surface

The molecular dynamics (MD) computer simulation technique was used to simulate the deposition and cluster growth processes of Pt on a vitreous silica surface. Using a combination of a modified Born-Mayer-Huggins potential (for the substrate) and a Lennard-Jones potential (for the adatoms), the structural features of clusters resulting from four different deposition processes were analyzed and compared to EXAFS results of a similar system. Two of the four deposition processes allowed cluster growth with little interaction with the substrate (by physical separation) and showed comparable results to the EXAFS data. In the two remaining deposition processes, cluster formation occuring with increasing interaction with the substrate resulted in smaller, less three-dimensional particles. This result is in accordance with experimental and theoretical calculations suggesting limited mobility of metal atoms to diffuse once in contract with the amorphous surface.     

Molecular dynamics analysis of the substrate temperature effect on thermomechanical characteristics of vapor deposited nanofilms

Modern engineering applications are in need for technologies of nanostructures and nanofilms with controllable properties. The detection of these structures requires methods of atomic research, among which are molecular dynamics techniques, Monte-Carlo simulation, and ab initio calculation. The most efficient method to deal with systems of about several thousands of atoms is molecular dynamics simulation. We used this method to analyze the formation of nanolayers on a Cu substrate in vapor deposition of Cu atoms. It is shown that the film deposited on the substrate surface replicates the crystalline structure of the substrate. It is found that at low deposition temperatures, the deposited layer reveals a great quantity of vacancies and vacancy clusters (nanopores). It is demonstrated that increasing the substrate temperature in metal vapor deposition ensures a more perfect lattice in the nanocoating, and the cohesive energy of atoms in the nanolayer thus approximates experimental values. It is also found that the increase in substrate temperature in the process causes Young’s modulus and elastic limit to tend to the values of a perfect crystal.