四(8-羟基喹啉)硼锂作为电子注入层的高效有机发光二极管

采用四(8-羟基喹啉)硼锂(LiBq4)代替LiF 作为电子注入材料, 以金属铝作为阴极, 制备了有机电致发光器件. 器件采用N,N'-(α-萘基)-N,N'-苯基联苯二胺(NPB)作为空穴传输层, 三(8-羟基喹啉)铝(Alq3)作为电子传输层和发光层. 采用LiBq4作为电子注入层, 实验结果表明, 器件的亮度、电流效率和起亮电压等性能均有改善, 超过了采用LiF作为电子注入层的器件.器件性能的提升可以用电子注入增强和电荷平衡来解释.     

Photochemical production of electroluminescent image

A polymer containing donorN-epoxypropylcarbazolyl groups and the acceptor tris(8-quinolinolato) aluminum (Alq₃) was shown to form a light-sensitive, acid-producing polymeric composition. The acid in the presence of 8-quinolinol (8-hydroxyquinoline) ensured photochemical dissolution of aluminum in the polyeric layer, yielding additionally organic aluminum complexes, such as Alq₃, Alq²⁺, and Alq ₂ ⁺ , and Alq₃-con-taining polymers. This led to a emergence of electroluminescence (EL) upon application of a potential difference to a sandwich diode representing transparent anode/exposed polymer layer/aluminum cathode. Electroluminescence did not appear at an Alq₃ concentration of 6 wt % and less in the composition, and only partial dissolution of the aluminum film after its deposition on the exposed polymeric layer provided the emergence of EL whose intensity increased with increasing the dose absorbed by the polymer. The addition of the chemical sensitizer dimethylaminobenzaldehyde to the composition triggered the conventional process of chemical amplification which consists in thermal buildup of the acid in exposed area. This provided a significant increase in concentration of organoaluminum complexes and enhancement of EL intensity.     

Organic electroluminescent devices using europium complex‐doped poly(N‐vinylcarbazole)

Electroluminescence (EL) properties of europium (Eu) complex‐doped poly(N‐vinylcarbazole) (PVK) were investigated. A device structure of glass substrate/indium‐tin oxide/hole‐injection layer/Eu complex‐doped PVK/hole‐blocking layer/electron transport layer/electron‐injection layer/Al was employed. Red emission originating from Eu complex was observed. Relatively high luminance of 50 cd/m² and an efficiency of 0.2% were obtained. Copyright © 2004 John Wiley & Sons, Ltd.     

叔丁基联苯基苯基噁二唑作空穴限制层的掺杂聚合物蓝光发光二极管

叔丁基联苯基苯基噁二唑作空穴限制层的掺杂聚合物蓝光发光二极管马於光,吴军,薛善华,黄劲松,田文晶,刘式墉,沈家骢,刘晓冬（吉林大学分子光谱与分子结构开放实验室,集成光电子学国家重点实验室,长春,１３００２３）（白求恩医科大学基础部）关键词聚合物,发光...     

Enhancing electroluminescence performance of MEH-PPV based polymer light emitting device via blending with organosoluble polyhedral oligomeric silsesquioxanes

Organosoluble polyhedral oligomeric silsesquioxanes (POSS) blending effect on electroluminescence properties of MEH-PPV based polymer light emitting device was investigated. Excellent compatibility and surface morphology of organosoluble POSS and MEH-PPV based composite films were observed using AFM spectroscopy. The surface roughness of POSS:MEH-PPV composite film increased with increasing POSS content. Interfacial area between the light-emitting layer and cathode was favorably enhanced for cathode electron-injection. MEH-PPV blended with POSS would create a better balance between the electron and hole fluxes for POSS:MEH-PPV composite film based devices. This led to greater current efficiency of the POSS:MEH-PPV composite film based device as compared to one with a light emitting layer of MEH-PPV. Organosoluble POSS concentration effects on the PL spectra and EL performances were also studied for the POSS:MEH-PPV composite film based polymer light emitting devices.     

Organic electroluminescent devices using organosilicon polymers containing phenylene or diethynylanthracene units

Double‐layer electroluminescent (EL) devices composed of an alternating polymer with mono‐, di‐, or tri‐silanylene and phenylene units, [(Si R) _m (C₆H₄)] _n (R = alkyl, m = 1–3) as a hole‐transporting layer, and tris(8‐quinolinolato)­aluminium(III) complex (Alq) as an electron‐transporting–emitting layer were fabricated. The longer silanylene chain lengths in the polymer, on going from m = 1 to m = 2 and 3, result in better electrical properties for the EL devices, implying that the σ–π conjugation in the polymers plays an important role in the hole‐transporting properties, including the hole‐injection efficiency from an anode. This is in marked contrast to the improved hole‐transporting properties that occur in response to reducing the silanylene chain length of silanylene‐diethynylanthracene polymers previously reported. The UV absorption maxima of silanylene‐phenylene polymers shift to longer wavelengths with increasing m, and their oxidation peak potentials in cyclic voltammograms shift to lower potential with increasing m, in accordance with the improved electrical properties of the device that are observed with the polymers containing the longer silanylene chain. A triple‐layer EL device with a hole‐transporting layer of monosilanylene‐diethynylanthracene polymer, an electron‐transporting–emitting layer of Alq, and an electron‐blocking layer of N,N′‐diphenyl‐N,N′‐bis(3‐methylphenyl)‐1,1′‐biphenyl‐4,4′‐diamine (TPD) exhibited a maximum efficiency of 1.0 lm W⁻¹ and a maximum luminance of 14750 cd m⁻², both of which are much higher than the values obtained from a conventional EL device with TPD/Alq. Copyright © 1999 John Wiley & Sons, Ltd.     

Electroluminescence performances of 1,1-bis(4-(N,N-dimethylamino)phenyl)-2,3,4,5-tetraphenylsilole based polymers in three cathode architectures

A new silole monomer with two 4-(N,N-dimethylamino)phenyl substitutions on silicon atom as designed and synthesized.Three copolymers PF-N-HPS1,PF-N-HPS10 and PF-N-HPS20 were then obtained by copolymerizations of 2,7-fluorene derivatives with the silole monomer at feed ratios of 1%,10%,and 20%.Their UV-vis absorption,electrochemical,photoluminescent,and electroluminescent (EL) properties were investigated.PF-N-HPS possessed HOMO levels of 5.25-5.58 eV,and showed green emissions.Using PF-N-HPS as the emissive layer,three different polymer light-emitting diodes were fabricated as device A with ITO/PEDOT/PF-N-HPS/Al,device B with ITO/PEDOT/PF-N-HPS/Ba/Al,and device C with ITO/PEDOT/PF-N-HPS/TPBI/Ba/Al.For the device A,PF-N-HPS only showed very low EL efficiency of 0.06-0.33 cd/A,indicating that the Al cathode could not inject electron efficiently to the emissive polymers containing the 4-(N,N-dimethylamino)phenyl groups.For the device B,low work function Ba supplied better electron injections,and the EL efficiency could be improved to 0.85-1.44 cd/A.TPBI with a deep HOMO level of 6.2 eV could enhance electron transport and hole blocking.Thus modified recombinations and largely elevated EL efficiency of 4.56-7.96 cd/A were achieved for the device C.The separation of the emissive layer and metal cathode with the TPBI layer may also suppress exciton quenching at the cathode interface.     

Creating a pseudometallic state of K+ by intercalation into 18-crown-6 grafted on polyfluorene as electron injection layer for high performance PLEDs with oxygen- and moisture-stable Al cathode

Polymer light-emitting diodes (PLEDs) suffer from inadequate lifetimes because of the use of environmentally sensitive metals as the cathodes. We present the use of water/methanol-soluble polyfluorene grafted with 18-crown-6 chelating to K(+) as the electron-injection layer (EIL) for deep-blue-emission PLEDs, allowing the use of environmentally stable Al as the cathode since electron donation from the 18-crown-6 can reduce K(+) to a stable "pseudometallic state", enabling it to act as an intermediate step for electron injection. Furthermore, when poly(ethylene oxide) was blended into the EIL to provide hole blocking (HB), the device exhibited the highest performance reported to date for a deep-blue-emission PLED based on a conjugated polymer as the emitting layer, with a brightness of 54,800 cd/m(2) and an external quantum efficiency of 5.42%. The use of such an EI-HB layer opens a broad avenue leading toward industrialization of PLEDs.     

含1,1-二（4-（N,N-二甲基胺基）苯基）-2,3,4,5-四苯基噻咯的聚合物在三种阴极结构中的电致发光性能

设计合成了一种1,1-位为二（4-（N,N-二甲基胺基）苯基的新型噻咯单体,并与2,7-芴单体聚合得到六苯基噻咯单体投料量为1%、10%、20%的三种共聚物PF-N-HPS1～20.研究了这些共聚物的紫外吸收光谱、电化学性质、光致发光光谱和电致发光性能.PF-N-HPS的HOMO能级为5.25～5.58eV,呈现绿光发射.以PF-N-HPS为发光层,制作了三种聚合物发光二极管（器件结构A：ITO/PEDOT/PF-N-HPS/Al;器件结构B：ITO/PEDOT/PF-N-HPS/Ba/Al;器件结构C：ITO/PEDOT/PF-N-HPS/TPBI/Ba/Al）.其中器件结构A的电致发光效率仅为0.1～0.33cd/A,说明PF-N-HPS中的4-（N,N-二甲基胺基）苯基结构不能使单独的Al阴极实现良好的电子注入.采用了低功函金属Ba阴极的器件结构B能改善电子的注入,使电致发光效率提高到0.85～1.44cd/A.器件结构C采用TPBI（HOMO：6.2eV）作为电子传输和空穴阻挡层,促进了电子和空穴的有效复合,进一步提高了电致发光效率（4.56～7.96cd/A）,其中TPBI层将噻咯聚合物与金属阴极隔离可能减少发光层在阴极界面处的激子猝灭也起到了一定的作用,器件结构C较器件结构B还获得了更好的绿光光谱.     

OLED and PLED Devices Employing Electrogenerated,Intramolecular Charge‐Transfer Fluorescence

The light generating mechanism of a series of light emitting diodes with electron donor–bridge–acceptor systems (D–b–A) as the emitting species was examined by constructing model diodes based on small organic molecules (OLEDs) as well as on molecularly doped electroactive (poly‐N‐vinylcarbazole, PVK) and insulating (polystyrene, PS) polymers (PLEDs). The direct electrogeneration of an intramolecular charge‐transfer (CT) fluorescence of the donor–bridge–acceptor systems occurred readily in OLED devices with a D–b–A system as the emissive layer. In diodes with PS as the host matrix, hole‐injection and electron‐injection occurred directly in the D–b–A molecules residing close to the anode and the cathode, respectively. In the PVK diodes, hole‐injection occurred primarily into PVK and the positive charge carrier was subsequently trapped on the D–b–A molecule, whereas electron‐injection at the cathode side occurred directly into the D–b–A molecules. Charge‐hopping between neighboring molecules then occurred until a hole and electron resided on the same molecule, which is equivalent to the formation of the CT excited state, and which finally relaxed by intramolecular charge recombination under the emission of CT fluorescence.     

Thermally crosslinkable hole‐transporting poly(fluorene‐co‐triphenylamine) for multilayer polymer light‐emitting diodes

This article reports the synthesis and characterization of a novel thermally crosslinkable hole‐transporting poly (fluorene‐co‐triphenylamine) (PFO‐TPA) by Suzuki coupling reaction, followed with its application in the fabrication of multilayer light‐emitting diodes by wet processes. The thermal, photophysical, and electrochemical properties of PFO‐TPA were investigated by differential scanning calorimeter, thermogravimetric analysis, optical spectroscopy, and cyclic voltammetry, respectively. Thermally crosslinked PFO‐TPA, through pendant styryl groups, demonstrates excellent thermal stability (T_d > 400 °C, T_g = 152 °C), solvent resistance, and film homogeneity. Its highest occupied molecular orbital level (?5.30 eV) lies between those of PEDOT:PSS (?5.0 ～ ?5.2 eV) and poly(9,9‐dioctylfluorene) (PFO: ?5.70 eV), forming a stepwise energy ladder to facilitate hole injection. Multilayer device with crosslinked PFO‐TPA as hole‐injection layer (HIL) (ITO/PEDOT:PSS/HIL/PFO/LiF/Ca/Al) was readily fabricated by successive spin‐coating processes, its maximum luminance efficiency (3.16 cd/A) were about six times higher than those without PFO‐TPA layer (0.50 cd/A). The result of hole‐only device also confirmed hole‐injection and hole‐transport abilities of crosslinked PFO‐TPA layer. Consequently, the device performance enhancement is attributed to more balanced charges injection in the presence of crosslinked PFO‐TPA layer. The thermally crosslinkable PFO‐TPA is a promising material for the fabrication of efficient multilayer polymer light‐emitting diodes because it is not only a hole‐transporting polymer but also thermally crosslinkable. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Improved EL efficiency of fluorene‐thieno[3,2‐b]thiophene‐based conjugated copolymers with hole‐transporting or electron‐transporting units in the main chain

New electroluminescent polymers (poly(9,9′‐dioctylfluorene‐co‐thieno[3,2‐b]thiophene‐co‐benzo[2,3,5]thiadiazole) ( P1) and poly(9,9′‐dioctylfluorene‐co‐thieno[3,2‐b]thiophene‐co‐benzo[2,3,5]thiadiazole‐co‐[4‐(2‐ethylhexyloxyl)phenyl]diphenylamine ( P2) ) possess hole‐transporting or electron‐transporting units or both in the main chains. Electron‐deficient benzothiadiazole and electron‐rich triphenylamine moieties were incorporated into the polymer backbone to improve the electron‐transporting and hole‐transporting characteristics, respectively. P1 and P2 show greater solubility than poly(9,9′‐dioctylfluorene‐co‐thieno[3,2‐b]thiophene ( PFTT ), without sacrificing their good thermal stability. Moreover, owing to the incorporation of the electron‐deficient benzothiadiazole unit, P1 and P2 exhibit remarkably lower LUMO levels than PFTT , and thus, it should facilitate the electron injection into the polymer layer from the cathode electrode. Consequently, because of the balance of charge mobility, LED devices based on P1 and P2 exhibit greater brightness and efficiency (up to 3000 cd/m² and 1.35 cd/A) than devices that use the pristine PFTT . © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 243–253, 2006     

Structural transition in the surfactant layer that surrounds gold nanorods as observed by analytical surface-enhanced Raman spectroscopy

Surface-enhanced Raman spectroscopy (SERS) of gold nanorods in cetyltrimethylammonium bromide solution has been used to analyze the interfacial surfactant structure based on the distance-dependent electromagnetic enhancement. The spectra were consistent with a surfactant bilayer oriented normal to the surface. As the surfactant concentration was reduced, a structural transition in the surfactant layer was observed through a sudden increase in the signal from the alkane chains. The structural transition was shown to influence the displacement of the surfactant layer by thiolated poly(ethylene glycol). The monodisperse and thoroughly characterized gold nanorod samples yield consistent enhancement factors that were compared to electromagnetic simulations.     

主链含电子传输型团的可溶性PPV聚合物载流子传输特性研究

合成了一种聚苯撑乙烯撑(PPV)主链上含有电子传输基团的新型结构电子聚合物(O-PPV).该低聚物的M_w=1000,T_g=197℃,可溶于氯仿和四氢呋喃.单层O-PPV器件的发光效率约为单层PPV器件的5～8倍.进一步构造了结构为空穴传输特性材料/O-PPV和O-PPV/电子传输特性材料的双层器件来研究O-PPV的载流子传输特性,实验结果表明,O-PPV是一种具有明显两性载流子传输的特性材料.     

An organic electroluminescent device with a molecularly doped polymer hole transport layer

Electroluminescent(EL) devices have been fabricated using four different polymers with different glass transition temperatures (T_g) dispersed with N,N′-bis-(3-methylphenyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) as a hole transport layer and tris(8-hydroxyquinoline) aluminum (Alq₃) as an emitting layer. It was found that the higher the T_g of the polymer, the longer the lifetime of the device. From observations of TPD-doped polymer films with optical microscope and atomic force microscope, dispersing TPD in the polymers was found to suppress the crystallization that causes the roughness of the film surface. It was also observed that the higher the T_g of the host polymers, the more difficult TPD crystallization was. The property of the EL device with polyethersulfone (PES) dispersed with TPD was also investigated. The lifetime of EL device with the TPD doped PES film was improved more than five times at a current density below 10 mA/cm² compared with the device with a conventional TPD hole transport layer. © 1997 John Wiley & Sons, Ltd.     

Polyelectrolyte modified solid surfaces: the consequences for ionic and mixed ionic/nonionic surfactant adsorption

This paper describes how the cationic polyelectrolyte, polyDMDAAC (poly(dimethyl diallylammonium chloride)), is used to manipulate the adsorption of the anionic surfactant SDS and the mixed ionic/nonionic surfactant mixture of SDS (sodium dodecyl sulfate)/C(12)E(6) (monododecyl hexaethylene glycol) onto the surface of hydrophilic silica. The deposition of a thin robust polymer layer from a dilute polymer/surfactant solution promotes SDS adsorption and substantially modifies the adsorption of SDS/C(12)E(6) mixtures in favor of a surface relatively rich in SDS compared to the solution composition. Different deposition conditions for the polyDMDAAC layer are discussed. In particular, at higher solution polymer concentrations and in the presence of 1 M NaCl, a thicker polymer layer is deposited and the reversibility of the surfactant adsorption is significantly altered.     

Organic light‐emitting device dark spot growth behavior analysis by diffusion reaction theory

Dark spot growth rate tracing experiments performed on an organic light‐emitting device show that moisture entering into the device is relatively properly fitted by Fick's diffusion equation in the substrate/indium tin oxide (ITO)/hole transport layer (HTL)/silver (Ag) structure. It is believed that the moisture is dissolved into the polymer layer, which results in a decrease in the diffusion coefficient in the device with the substrate/ITO/HTL/electroluminescent (EL) polymer/Ag structure. The diffusion and chemical reaction occurring in the cathode layer further decreases the diffusion coefficient in the device with the substrate/ITO/HTL/EL polymer/calcium/Ag structure. Useful parameters, such as diffusion and solubility constants, describing possible mechanisms happening during dark spot growth on organic light‐emitting diode devices are extracted. © 2001 John Wiley & Sons, Inc. J Polym Sci Part B: Polym Phys 39: 1697–1703, 2001     

Significant influence of doping effect on photovoltaic performance of efficient fullerene-free polymer solar cells

The modification mechanism of the water/alcohol cathode interlayer is one of the most complicated problems in the field of organic photovoltaics,which has not been clearly elucidated yet;this greatly restricts the further enhancement of the PCE for polymer solar cells.Herein,we clarified the different effects of PFN and its derivatives,namely,poly[(9,9-bis(3'-((N,N-dimethyl)-N-ethylammonium)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)](PFN-Br) in modifying fullerene-free PSCs.It is found for the first time that doping on IT-4F by the amino group of PFN leads to the unfavorable charge accumulation,and hence,forms a dense layer of electronegative molecule due to the poor electron transport capacity of the non-fullerene acceptor IT-4F.The electronegative molecular layer can block the electron transfer from the active layer to the interlayer and cause serious charge recombination at the active layer/cathode interface.This mechanism could be verified by the ESR measurement and electron-only devices.By replacing PFN with PFN-Br,the excessive doping effect between the cathode interlayer and IT-4F is eliminated,by which the charge transport and collection can be greatly improved.As a result,a high PCE of 13.5%was achieved in the fullerene-free PSCs.     

A new catalyst layer based on in situ pore generation of sulfonated poly(ether ether ketone) for PEMFC

A new concept of in situ pore generation to reduce water flooding in cathode catalyst layer (CCL) of polymer electrolyte membrane fuel cell (PEMFC) is proposed with the introduction of water soluble poly(ethylene glycol) (PEG) as a porogen to CCL based on sulfonated poly(ether ether ketone) (sPEEK). In this new type of CCL, PEG is directly removed by water produced during the cathode reaction. The new CCL exhibited much higher cell performance especially in mass transport limitation region compared to the pristine sPEEK-CCL. In addition, the presence of PEG in the new CCL lowered the glass transition temperature of the sPEEK binder, and it could improve the transference of catalyst layer onto the polymer electrolyte membrane.     

PANI-CSA: An Easy Method to Avoid ITO Photolithography in PLED Manufacturing

In order to optimize polymer light emitting diode (PLED) performances, devices with holes injected through an Indium Tin Oxide (ITO) / Polyaniline (PANI) electrode into the polymer are much more efficient than devices fabricated with the anode made only by ITO. We demonstrated that by using doped PANI as hole injection layer in a polymer light emitting diode the manufacturing process can become simpler. Indeed, the pattern of conductive layer can be produced without ITO photolithography by UV exposition. As hole transporter layer, Poly(N-vinylcarbazole) (PVK) was spin coated over the doped PANI layer and a layer of tris (8-hydroxy) quinoline aluminum (Alq₃) was then thermally evaporated so as to form the electron transport layer. To complete the device structure, Aluminum contacts were deposited onto the organic layers by vacuum evaporation at low pressure. The layers were characterized by X-ray small-angle diffraction, IR Raman and UV-Vis spectroscopies. Devices without PANI and with PANI as HIL were studied.