Magnetic and transport properties of UBi2 and USb2 single crystals

The thermoelectric power, S(T), of USb₂ and UBi₂, which are tetragonal, uniaxial antiferromagnets below T _N?=?202?K and 180.8?K, respectively, have been examined between 0.4?K and 300?K. The values of S(T), up to now known above 70?K for USb₂ and unknown for UBi₂, are positive along the a-axis for both compounds in the whole examined temperature range. The S(T) data for the c-axis (the easy magnetization axis) are positive near room temperature for USb₂ and UBi₂ but becomes negative below 120?K and 170?K, respectively, with two very deep minima in S(T) dependence for USb₂. In the latter compound the Fermi surface, known from literature, is composed of the only cylindrical sheets that are slightly corrugated and parallel to the c-axis. UBi₂, the Fermi surface of which is composed of one spherical and two cylindrical sheets, shows corresponding minima although less pronounced than those in USb₂. Having at disposal the highest purity single crystals in comparison to those for which the resistivity, ρ(T), has been reported in literature, the ρ(T) anisotropy was re-examined for these two systems. Magnon and phonon contributions to their total electrical resistivity have been determined and the critical fluctuation behaviour of the resistivity near T _N for both dipnictides has been analysed. Although the magnetic susceptibilities of UBi₂ and USb₂ reveal a similarity, their transport properties are significantly different due to the difference in the Fermi surface topology.     

Suppression of superconductivity in YNi2B2C at the atomic disordering

The behavior of the electrical resistivity ρ(T), the superconducting transition temperature T _c , and the upper critical field H _c2(T) of a polycrystalline sample of YNi₂B₂C irradiated by thermal neutrons with the subsequent high-temperature isochronous annealing in the temperature interval T _ann = 100–1000°C has been studied. It has been found that the irradiation of YNi₂B₂C with a fluence of 10¹⁹cm^?2 leads to the suppression of the superconductivity. The final disordered state is reversible; i.e., the initial ρ(T), T _c , and H _c2(T) values are almost completely recovered upon annealing at up to T _ann = 1000°C. The quadratic dependence ρ(T) = ρ₀ + a ₂ T ² is observed for the sample in the superconducting state (T _c = 5.5?14.5 K). The coefficient a ₂ (proportional to the square of the electron mass m*) hardly changes. The form of the dependence of T _c on ρ₀ can be interpreted as the suppression of the two superconducting gaps, Δ₁ and Δ₂ (Δ₁ ～ 2Δ₂). The degradation rate of Δ₁ is about three times higher than that of Δ₂. The dependences dH _c2/dT on ρ₀ and T _c may be described by the relations for a superconductor in the intermediate limit (the coherence length ζ₀ is on the order of the electron mean free path l _tr) under the assumption of a nearly constant electron density of states on the Fermi level N(E _F). The observed behavior of T _c obviously does not agree with the widespread opinion about the purely electron-phonon mechanism of superconductivity in the compounds of this type supposing the anomalous type of superconducting pairing.     

Galvanomagnetic properties of atomically disordered Sr<Subscript>2</Subscript>RuO<Subscript>4</Subscript> single crystals

The effect of neutron-bombardment-induced atomic disorder on the galvanomagnetic properties of Sr₂RuO₄ single crystals has been experimentally studied in a broad range of temperatures (1.7–380 K) and magnetic fields (up to 13.6 T). The disorder leads to the appearance of negative temperature coefficients for both the in-plane electric resistivity (ρ_a) and that along the c axis (ρ_c), as well as the negative magnetoresistance Δρ, which is strongly anisotropic to the magnetic field orientation (H ∥ a and H ∥ c), with the easy magnetization direction along the c axis and a weak dependence on the probing current direction in the low-temperature region. The experimental ρ_a(T) and ρ_c(T) curves obtained for the initial and radiation-disordered samples can be described within the framework of a theoretical model with two conductivity channels. The first channel corresponds to the charge carriers with increased effective masses (～10m _e , where m _e is the electron mass) and predominantly electron-electron scattering, which leads to the quadratic temperature dependences of ρ_a and ρ_c. The second channel corresponds to the charge carriers with lower effective masses exhibiting magnetic scattering at low temperatures, which leads to the temperature dependence of the ρ_{a, c}(T) ∝ 1/T type.     

Effect of electron irradiation on the structure and properties of the MgB2 superconductor

This paper reports on the results of an investigation into the effect of irradiation of the Bardeen-Cooper-Schriefer superconductor MgB₂ by electrons with a mean energy ē ～ 10 MeV at low doses (0 ≤ Φt ≤ ～5 × 10¹⁶ cm^?2) on the lattice parameters, the intensity and width of diffraction lines, the superconducting transition temperature T _c , and the temperature dependence of the resistivity ρ(T) in the normal state. The results of structural investigations have revealed regularities in the defect formation in the magnesium and boron sublattices of the MgB₂ compound as a function of the electron fluence. At the initial stage, irradiation leads to the formation of vacancies, originally in the magnesium sublattice and then in the boron sublattice. For fluences Φt ≥ ～1 × 10¹⁶ cm^?2, vacancies are formed in both sublattices. The evolution of the electrical and physical properties [T _c , ρ_{273 K}, residual resistivity ratio RRR = ρ_{273 K}/ρ_{50 K}, parameters of the dependence ρ(T)] under electron irradiation is in agreement with the regularities revealed in the formation of radiation-induced defects in the crystal lattice of the MgB₂ compound.     

YBa2Cu3O7-δ外延薄膜的有效钉扎势

在0—7T磁场范围内，测量了不同测量电流密度下YBa₂Cu₃O_7-δ外延薄膜的电阻温度关系.实验结果表明，临界温度以下，混合态的耗散电阻率能很好地用热激活磁通蠕动描述.有效钉扎势的电流密度关系遵守Zeldov等人提出的对数关系，有效钉扎势的温度和磁场关系遵守U∝(1-T/T_c)H^-α关系，其中α=0.63，与热激活磁通点阵位错运动模型相一致，表明样品具有2D涡旋性质. 关键词：     

Angular dependence of the upper critical field in Bi2Sr2CuO6+δ

The angular dependence of the upper critical magnetic field was investigated in a wide range of temperatures in very high-quality Bi₂Sr₂CuO_6+δ single crystals with critical temperature T _c (midpoint) ? 9 K in magnetic fields up to 28 T. Although the typical value of the normal state resistivity ratio ρ_c/ρ_ab≈10⁴, the anisotropy ratio H _c2∥ab/H _c2⊥ab of the upper critical fields is much smaller and shows an unexpected temperature dependence. A model based on strong anisotropy and small transparency between superconducting layers is proposed.     

Electron transport,penetration depth,and the upper critical magnetic field in ZrB<Subscript>12</Subscript> and MgB<Subscript>2</Subscript>

We report on the synthesis and measurements of the temperature dependences of the resistivity ρ, the penetration depth λ, and the upper critical magnetic field H_c2, for polycrystalline samples of dodecaboride ZrB₁₂ and diboride MgB₂. We conclude that ZrB₁₂ behaves as a simple metal in the normal state with the usual Bloch-Grüneisen temperature dependence of ρ(T) and with a rather low resistive Debye temperature T_R = 280 K (to be compared to T_R = 900 K for MgB₂). The ρ(T) and λ(T) dependences for these samples reveal a superconducting transition in ZrB₁₂ at T_c = 6.0 K. Although a clear exponential λ(T) dependence in MgB₂ thin films and ceramic pellets was observed at low temperatures, this dependence was almost linear for ZrB₁₂ below T_c/2. These features indicate an s-wave pairing state in MgB₂, whereas a d-wave pairing state is possible in ZrB₁₂. In disagreement with conventional theories, we found a linear temperature dependence, of H_c2(T) for ZrB₁₂ (H_c2(0) = 0.15 T).     

Far-infrared probe of energy gap in LaO1−xFxFeGe compound

We report on the electrical resistivity and far-infrared reflectance measurements of LaO_1?xF_xFeGe samples. Furthermore, we introduce a new method to probe the energy gap and determine its value. The onset transition temperature was 22.8 K for x = 0.13, and a clear anomaly was observed at 90 K in the ρ(T) curve for x = 0.11 with T_c = 20.6 K. We clearly observed the phonon-suppressed feature in reflectance spectra where F-doping caused a strong suppression of a peak at 200 cm^?1. The energy gap above T_c, 2Δ = 2.10 meV, was determined from the measured spectra based on the changes in reflectivity by F-doping.     

Structural and electrical properties of granular metal films

Granular metal films (50–200,000 Å thick) were prepared by co-sputtering metals (Ni, Pt, Au) and insulators (SiO₂, Al₂O₃), where the volume fraction of metal, x, was varied from x = 1 to x = 0.05. The materials were characterized by electron micrography, electron and X-ray diffraction, and measurements of composition, density and electrical resistivity at electric fields ε up to 10⁶ V/cm and temperatures T in the range of 1.3 to 291 K. In the metallic regime (isolated insulator particles in a metal continuum) and in the transition regime (metal and insulator particles in a metal continuum) and in the transition regime (metal and insulator labyrinth structure) the conduction is due to percolation with a percolation threshold at x?0.5. Tunnelling measurements on superconductor-insulator-granular metal junctions reveals that the transition from the metallic regime to the dielectric regime (10–50 Å size isolated metal particles in an insulator continuum) is associated with the breaking up of a metal continuum into isolated metal particles. In the dielectric regime the temperature dependence of the low-field resistivity is given by ρL = ρo exp [2√(C/kT)], and the field dependence of the high-field, low-temperature resistivity is given by ρH = ρ∞ exp (εo/ε), where ρo, ρ∞, C, and εo are material constants. A simple theory based on the assumption that the ratio s/d (d-metal particle size and s-separation between particles) is a function only of composition yields expressions for ρ(ε, T) in excellent agreement with experiment. Furthermore, the theory predicts the experimental finding that the resistivity can be expressed in terms of a universal function of the reduced variables kT/C and ε/εo. The inter-relationship between all the important physical properties of granular metals and their structure is also discussed.     

Electron transport in diborides: Observation of superconductivity in ZrB2

We report on syntheses and electron transport properties of polycrystalline samples of diborides (AB₂) with different transition metals atoms (A=Zr, Nb, Ta). The temperature dependence of resistivity, ρ(T), and ac susceptibility of these samples reveal a superconducting transition of ZrB₂ with T _c =5.5 K, while NbB₂ and TaB₂ have been observed to be nonsuperconducting up to 0.37K. H _c2(T) is linear in temperature below T _c , leading to a rather low H _c2(0)=0.1 T. At T close to T _c , H _c2(T) demonstrates a downward curvature. We conclude that these diborides, as well as MgB₂ samples, behave like simple metals in the normal state with usual Bloch-Grüneisen temperature dependence of resistivity and with Debye temperatures 280, 460, and 440 K for ZrB₂, NbB₂, and MgB₂, respectively, rather than T ² and T ³, as previously reported for MgB₂.     

非晶态FeZrB合金的电阻率与温度的关系

本文研究了非晶态(Fe_1-xZr_x)_84.5B_15.5(x=0,0.02,0.04,0.06,0.08,0.1,0.15)和Fe_90-xB_xZr₁₀(x=0,4,10,16,20)合金的电阻率ρ与温度T的关系。实验结果表明,当Zr含量在0.02≤x≤0.08时,ρ-T曲线出现两个线性斜率,在略高于居里温度T_c处出现转折,在T关键词：     

Charge transport and pressure dependence of Tc of single crystal,ferromagnetic EuB6

We present Hall Effect and resistivity data which demonstrate that EuB₆ is a degenerate semiconductor transforming into a metal or semimetal below the ferromagnetic ordering temperature, T_c = 13.7K. We also report an anomalously large, positive pressure dependence of T_c, (1/T_c)(ΔT_c/ΔP) ? 4 × 10^?2 kbar^?1.     

Normal-state electrical resistivity and superconducting magnetic penetration depth in Eu<Subscript>0.5</Subscript>K<Subscript>0.5</Subscript>Fe<Subscript>2</Subscript>As<Subscript>2</Subscript> polycrystals

We report measurements of the temperature dependence of the electrical resistivity, ρ(T), and magnetic pen-etration depth, λ(T), for polycrystalline samples of Eu_0.5K_0.5Fe₂As₂ with T _c = 31 K. ρ(T) follows a linear temperature dependence above T _c and bends over to a weaker temperature dependence around 150 K. The magnetic penetration depth, determined by radio frequency technique displays an unusual minimum around 4 K which is associated with short-range ordering of localized Eu³⁺ moments. The article is published in the original.     

Properties of (Bi1/9Na2/3)(Mn1/3Nb2/3)O3 analysed within dielectric permittivity,conductivity, electric modulus and derivative techniques approach

The (Bi_1/9Na_2/3)(Mn_1/3Nb_2/3)O₃ ceramics with perovskite structure were sintered. The XRD test proved that the samples are cubic (a?=?3.920?±?0.001?Å). Microstructure and atomic composition were determined with a SEM (JSM-5410) equipped with energy dispersion X-ray analyser (ISIS-300). The fluctuation in the chemical composition was found indicating on local disorder. Broadband dielectric spectroscopy in the range 10^?1–3?·?10⁷?Hz was applied within the range of 100–650?K. The real, ?′(f,?T), and imaginary, ?″(f,?T), parts of complex dielectric permitivity characteristics, both in the temperature and frequency domain, show relaxation processes partially covered by electric conductivity. At high temperatures the electric conductivity exhibits a thermally activated behaviour σ(f,?T)?∝?exp(?E _a/kT) but the variable range hopping (VRH) dependence σ?∝?exp[?(T ₀/T)^1/4] is manifested at low temperatures. The derivatives technique in the frequency (??log??/??log?ω) and temperature (??log??/?T) domain enabled various relaxation processes to be distinguished. The data converted to electric modulus representation, M*(f,?T)?=?1/?*, exhibited clearly resolved relaxation peaks. The relaxation times obtained from the peaks position show a slightly non-Arrhenius temperature behaviour with the activation energy varying in 0.4–0.6?eV range and characteristic time of the electric conductivity relaxation of the order of 10^?12?s. The relaxation times can be fitted at better accuracy with the VRH dependence where T ₀ are of the order of 10⁸?K. It is shown that the low frequency ac-conductivity converges to dc-conductivity and the relation σ(0)?～?ω_m?～?τ_m ^?1 typical for the disordered solids applies. The conduction current relaxation relationship behaves in accord with the VRH system: σ_dc?∝?(T/T ₀)^q (e ²/kT) ω_c, where ω_c?=?ν_ph exp[?(T ₀/T)^1/4] is valid for the locally disordered (Bi_1/9Na_2/3)(Mn_1/3Nb_2/3)O₃ compound.     

Normal state resistivity and Tç studies of superconducting Ti1−xSbx system

The superconducting transition temperature (T_c) and the temperature dependence of the normal state resistivity of the Ti_1?xSb_x system between T_c and 300 K have been studied. The T_c values are found to depend on the heat treatment of the samples. Below 40 K, all alloys show a T² dependence of the resistivity. However, the sample with x = 0.53 is not superconducting and shows a different behaviour of the resistivity.     

Transport properties in the pseudobinary (Gd,Y) Al2 series

The temperature dependence of the electrical resistivity, the thermal conductivity and the thermopower of the cubic isostructural (Gd_xY_1–x)Al₂ series will be presented. The magnetic properties of this system are characterized by the existence of ferromagnetism for Gd concentrations x>0.3 while for low Gd contents cluster and spinglass behaviour is observed. The spin dependent scattering contribution to the transport phenomena has been obtained by comparing the experimental data of the magnetic compounds with those of the isostructural nonmagnetic YAl₂. For the ferromagnetic concentration range and forT>T _c (T _c =Curie temperature) we revealed a temperature independent contribution to the electrical resistivity, a contribution with a temperature variation of 1/T to the thermal resistivity and a linear temperature dependence of this part to the thermopower. These results are in good agreement with the temperature dependence calculated by solving the linearized Boltzmann equation for this type of scattering processes.     

Resistivity,thermopower and single-particle tunneling studies on some zinc-doped yttrium barium copper oxide superconductors

Abstract

Resistance and thermopower measurements have been made on a series of compounds, YBa₂Cu₃- _x Zn _x O_7-y, with x = 0.025, 0.05, 0.1, 0.15 and 0.2. The superconducting transition temperature decreases as the zinc concentration increases. In a range of temperatures below T_M , the mid point of the transition, the resistance shows an exponential temperature dependence fitting the phenomenological formula proposed by Ausloos et al. From the plot of logarithm of resistivity vs. (T_M ? T) ^1/2/T, one deduces a value of the average dimension of the Josephson junction to be a few tens of Å, suggesting the microtwin boundaries to be the location of the junctions. The thermopower shows a peak always just above T_c . This conclusively shows that phonon drag is not the cause of the peak. The temperature dependence of the thermopower appears to resemble closely the earlier observations of Srinivasan et al. on yttrium barium copper oxide. Single-particle tunneling measurements carried out for two concentrations, x = 0 and 0.05, appear to indicate that the energy gap parameter scales with T_c , and 2Δ/kT_c has an approximate value of 5.5.     

Quasi-two-dimensional transport properties of the layered superconductor Nd2−xCe x CuO4+δ

The temperature dependences of resistivities ρ_ab in the ab plane and ρ_c along the c axis have been studied for single-crystal Nd_{2 ? x} Ce_xCuO_{4 + δ} (x = 0.12, 0.15, 0.17, 0.20) films with (001) and (1 $\bar 1$ 0) orientations. The superconducting transition temperature and anisotropy coefficient are shown to be maximal in optimally annealed samples (the oxygen content is close to the stoichiometric content, δ → 0). A combination of the metallic behavior of the ρ_ab(T) dependence and the nonmetallic behavior of the ρ_c(T) dependence for the optimally annealed samples is an intrinsic property of the substance and an indication of the fact that the system is quasi-two-dimensional. This layered quasi-two-dimensional system is an Anderson dielectric with a strongly anisotropic localization radius (R _loc ^ab ? R _loc ^c ). An increase in the oxygen content and, hence, in the degree of disorder in the Nd_{2 ? x} Ce_xCuO_{4 + δ} system is found to decrease the resistivity anisotropy coefficient. Thus, a disorder-induced Anderson transition takes place in this quasi-two-dimensional system.     

Thermal conductivity of USb2 and UBi2 single crystals

The thermal conductivity (κ) of single crystals of tetragonal uniaxial antiferromagnets USb₂ (T _N = 202 K) and UBi₂ (T _N = 180.8 K) has been measured along the a-axis (κ_a ) over the temperature range from 0.5 to 300 K and along the c-axis (κ_c ) from 0.5 to 70 K. The as-grown samples have residual resistivity ratio (RRR) values of about 500–600 and 100–150 for UBi₂ and USb₂, respectively. The anisotropy of the thermal conductivity (κ_a (T)/κ_c (T) ～ 5) and the low-T Lorenz ratios are discussed in relation to Fermi surface topology for both compounds.     

Variable-range hopping conduction in LaMnO<Subscript>3 + δ</Subscript>

The temperature dependence of the electrical resistivity ρ(T) for ceramic samples of LaMnO_{3 + δ} (δ = 0.100–0.154) are studied in the temperature range T = 15–350 K, in magnetic fields of 0–10 T, and under hydrostatic pressures P of up to 11 kbar. It is shown that, above the ferromagnet-paramagnet transition temperature of LaMnO_{3 + δ}, the dependence ρ(T) of this compound obeys the Shklovskii-Efros variable-range hopping conduction: ρ(T) = ρ₀(T)exp[(T ₀/T)^1/2], where ρ₀(T) = AT ^9/2 (A is a constant). The density of localized states g(?) near the Fermi level is found to have a Coulomb gap Δ and a rigid gap γ(T). The Coulomb gap Δ assumes values of 0.43, 0.46, and 0.48 eV, and the rigid gap satisfies the relationship γ(T) ≈ γ(T _v)(T/T _v)^1/2, where T _v is the temperature of the onset of variable-range hopping conduction and γ(T _v) = 0.13, 0.16, and 0.17 eV for δ = 0.100, 0.125, and 0.154, respectively. The carrier localization lengths a = 1.7, 1.4, and 1.2 Å are determined for the same values of δ. The effect of hydrostatic pressure on the variable-range hopping conduction in LaMnO_{3 + δ} with δ = 0.154 is analyzed, and the dependences Δ(P) and γ_v(P) are obtained.