Magnetism in UNi2Ga3

We present the physical properties of the new intermetallic compound UNi₂Ga₃. This compound crystallizes in the hexagonal CaCu₅-structure, and bulk experiments (specific heat c _p, susceptibility X, magnetization M and resistivity ρ) indicate the system to undergo a magnetic transition at 9.5 K. No superconductivity is observed down to 50 mK. The magnetic transition in UNi₂Ga₃ closely resembles that of the incommensurably ordered state in the related heavy-fermion superconductor UNi₂Al₃. In addition, and independently from the conditions for sample preparation, we found indications for a considerable degree of lattice disorder, likely due to structural Ga/Ni disorder. We discuss our results, particularly the absence of superconductivity in UNi₂Ga₃, in comparison to UNi₂Al₃.     

Superconductor order parameter symmetry in UPd Al

The heavy fermion compound UPd₂Al₃ has attracted much interest on account of the coexistence of antiferromagnetism and superconductivity at temperatures below 2 K. The antiferromagnetic fluctuations provide, principally via inelastic neutron scattering, a window on the low frequency dynamics in this material. By an analysis of neutron scattering data, and taking into consideration results from other experimental probes, it is suggested which sheet(s) of the f-electron Fermi surface may play an active role in forming the superconducting state in UPd₂Al₃. The proposed scheme sheds new light on previously reported anomalies in this material. Received 16 July 1999     

Nuclear quadrupole resonance study of heavy fermion superconductors

By using nuclear quadrupole resonance (NQR), nuclear spin-lattice relaxation rate 1 /T₁ of the heavy fermion superconductors (URu₂Si₂, UPd₂Al₃, CeRu₂) has been measured. The NQR measurement requires no external field, and is especially suitable for ¹⁰⁵Pd and ¹⁰¹Ru, which have very small nuclear gyromagnetic ratios and large electric quadrupole moments. In URu₂Si₂ and UPd₂Al₃, the absence of the Hebel–Slichter coherence peak just below the superconducting transition temperature T_C and the power law temperature dependence (T³) in the superconducting state has shown appearance of anisotropic non-s-wave superconductivity. On the contrary, an exponential temperature dependence of 1/T₁ was observed in CeRu₂, indicating the superconductivity to be conventional s-wave. This revised version was published online in August 2006 with corrections to the Cover Date.     

The Tl-Ba-Ca-Cu-O superconducting ceramics containing Al2O3

The Tl-Ba-Ca-Cu-O superconducting ceramics containing Al₂O₃ have been prepared utilizing the reaction, Tl₂O₂+BaCuO₂+Ca₂CuO₃+A1₂O₃ or Tl₂O₃+BaCuO₂ +Ca₂CuO₃+AlCuO_2.5. It is shown that the resulting ceramics show the superconductivity at temperatures over 100 K when the Al/Cu molar ratio is kept below 0.5. EPMA analyses revealed that there is always an Al₂BaO₄ layer between the superconducting Tl-Ba-Ca-Cu-O and Al₂O₃ phases, leading to the separation between the superconducting and A1₂O₃ phases.     

Zerfall des zweiten 2+-Zustandes von44Ca

Solid solutions between the compounds Nb₃Al, Nb₃Ga, Nb₃Ge, Nb₃In, and Nb₃Sn have been prepared by arc melting in argon atmosphere. Transitions to superconductivity, lattice constants and values of microhardness have been measured for all samples as cast as well as annealed. In agreement withMatthias et al. the highest transition to superconductivity at 20.05 °K has been observed in the system Nb₃(Al_1?xGe_x). A relation between microhardness and transition to superconductivity also expressed byMatthias has been verified for most of the systems.     

Al2O3单晶三明治结构的高温热激发电流

以Al₂O₃单晶和具有三明治结构的Al₂O₃单晶-Bi₂O₃-Al₂O₃单晶试样为研究对象,测量了在室温到750℃之间升温过程和降温过程中这两种试样的热激发电流,仅在三明治结构试样中检测到了热激发电流.随测量过程中升温速率的增大,降温过程中的热激发电流逐渐减小.认为热激发电流是由缺陷离子的扩散所引起,通过扩散活化能的计算发现有两种缺 关键词： 热激发电流 缺陷 扩散     

Fermi surface,magnetic, and superconducting properties in actinide compounds

The de Haas–van Alphen effect, which is a powerful method to explore Fermi surface properties, has been observed in cerium, uranium, and nowadays even in neptunium and plutonium compounds. Here, we present the results of several studies concerning the Fermi surface properties of the heavy fermion superconductors UPt₃ and NpPd₅Al₂, and of the ferromagnetic pressure-induced superconductor UGe₂, together with those of some related compounds for which fascinating anisotropic superconductivity, magnetism, and heavy fermion behavior has been observed.     

A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric

Accumulation-type GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al₂O₃ gate dielectrics are fabricated. The device, with atomic-layer-deposited Al₂O₃ as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al₂O₃ as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the Al₂O₃ film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm²/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition Al₂O₃ growth and device fabrication.     

The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method

We produced dielectric stacks composed of ALD SiO₂ and ALD Al₂O₃, such as SiO₂/Al₂O₃, Al₂O₃/SiO₂, and SiO₂/Al₂O₃/SiO₂, and measured the leakage currents through the stacks in comparison with those of the single oxide layers. SiO₂/Al₂O₃ shows lowest leakage current for negative bias region below 6.4 V, and Al₂O₃/SiO₂ showed highest current under negative biases below 4.5 V. Two distinct electron conduction regimes are observed for Al₂O₃ and SiO₂/Al₂O₃. Poole-Frenkel emission is dominant at the high-voltage regime for both dielectrics, whereas the direct tunneling through the dielectric is dominant at the low-voltage regime. The calculated transition voltage between two regimes for SiO₂ (6.5 nm)/Al₂O₃ (12.6 nm) is −6.4 V, which agrees well with the experimental observation (−6.1 V). For the same EOT of entire dielectric stack, the transition voltage between two regimes decreases with thinner SiO₂ layer.     

Die elektrischen Eigenschaften des Kondo-Supraleiters (La,Ce)Al2

In the ternary alloy (La, Ce)Al₂ the Kondo anomalies due to the Cerium impurities are studied in the normal and superconducting state. A vanishing of superconductivity in certain (La, Ce)Al₂ alloys below a second transition temperature has been observed for the narrow range of 0.6–0.7 at% Ce-additions. The transition back into the normal state has been observed by means of dc-conductivity and low frequency mutual inductance measurements down to 30 mK. Curves of the upper critical field versus temperature show a maximum at finite temperatures even for lower Ce-concentrations. The temperature dependence of the pair-breaking parameter has been deduced empirically from the upper critical field curves, assuming additive pair breaking theory. In contradiction to the theory no decrease of the pair-breaking parameter forT → 0 can be observed. Therefore the reentrance of superconductivity at ultra low temperatures cannot be expected.     

Fabrication of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Al structure by nitric acid oxidation at room temperature

A thick Al₂O₃/aluminum (Al) structure has been fabricated by oxidation of Al with 68wt% and 98wt% nitric acid (HNO₃) aqueous solutions at room temperature. Measurements of the Al₂O₃ thickness vs. the oxidation time show that reaction and diffusion are the rate-determining steps for oxidation with 68wt% and 98wt% HNO₃ solutions, respectively. Observation of transmission electron micrographs shows that the Al₂O₃ layer formed with 68wt% HNO₃ has a structure with cylindrically shaped pores vertically aligned from the Al₂O₃ surface to the Al₂O₃/Al interface. Due to the porous structure, diffusion of HNO₃ proceeds easily, resulting in the reaction-limited oxidation mechanism. In this case, the Al₂O₃/Al structure is considerably rough. The Al₂O₃ layer formed with 98wt% HNO₃ solutions, on the other hand, possesses a denser structure without pores, and the Al₂O₃/Al interface is much smoother, but the thickness of the Al₂O₃ layer formed on crystalline Al regions is much smaller than that on amorphous Al regions. Due to the relatively uniform Al₂O₃ thickness, the leakage current density flowing through the Al₂O₃ layer formed with 68wt% HNO₃ is lower than that formed with 98wt% HNO₃.     

新型超导材料MgCNi3的电子结构与超导电性研究

用MS-Xα方法研究了非氧化物超导材料MgCNi₃的电子结构. 研究结果显示, 态密度分布曲线的主峰靠近Fermi面, 主要来自于Ni的d电子的贡献. 用T(T=Co，Mn，Cu)替代MgCNi₃中的部分Ni形成化合物MgCNi₂T，替代使Ni的价电子数减小, 价态发生变化, Fermi面处态密度N(E_F)减小. 计算结果表明：无论是电子掺杂（Cu）还是空穴掺杂（Co，Mn），MgCNi₃的超导电 关键词： 电子结构 态密度 超导电性     

Effective silicon surface passivation by atomic layer deposited Al2O3/TiO2 stacks

In this work atomic layer deposition of Al₂O₃ and TiO₂ has been used to obtain dielectric stacks for passivation of silicon surfaces. Our experiments on n‐ and p‐type silicon wafers deposited by thin Al₂O₃/TiO₂ stacks show that a considerably improved passivation is obtained compared to the Al₂O₃ single layer. For Al₂O₃ films thinner than 20 nm the emitter saturation current density decreases with increasing TiO₂ thickness. Especially the passivation of ultrathin (～5 nm) Al₂O₃ is very effectively enhanced by TiO₂ due to a decreased interface defect density as well as an increased fixed negative charge in the stacks. Hence, the thin Al₂O₃/TiO₂ stacks developed in this work can be used as a passivation coating for Si‐based solar cells. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magnetic and superconducting properties of doped (Sr,Ca)10Cu17O29-type single crystals

Magnetization, resistivity and electron spin resonance (ESR) measurements have been performed on single crystals of A₁₀Cu₁₇O₂₉ (A=Ca_5.9, Sr_3.5, Bi_0.3, Pb_0.1, Y_0.1, Al_0.1) of the S=1/2 quasi-one-dimensional system, which has both simple chains and two-leg ladders of copper ions. Substantial hole doping has been achieved in the studied crystals, which led to superconductivity with a high critical temperature (T_c≈80 K). The values of the penetration depth have been estimated for temperatures in the range 30–60 K using the reversible magnetization data. A rough estimation of the Ginzburg–Landau parameter, κ, indicates that the superconductivity in the investigated ladder material should be described as an extreme type-II limit. It has been suggested that the superconductivity in the studied system should be related to the two-leg ladders rather than to the chains.     

新超导体MgCNi3的虚晶掺杂研究

用全势线性缀加平面波方法,考虑局域自旋密度近似研究虚晶掺杂MgCNi₃的超导电性和磁性.计算了自旋极化能带结构、体弹性模量和它对压力的导数、原子磁矩m及其变化率.计算结果表明，对于电子掺杂的Mg_1-xAl_xCNi₃(0≤x≤0.5)，超导电性和磁涨落随掺杂量的增加逐渐减小.空穴掺杂的Mg_1-xNa_xCNi₃,在x＝0.12处出现铁磁相变，超导电性消失.在MgCNi₃少量空穴掺杂区域(0≤x<0.12)，表现为超导与磁涨落共存的不稳定状态. 关键词： 超导电性 能带结构 态密度 磁性     

The electrical characteristics of a 4H-silicon carbide metal-insulator-semiconductor structure with Al2O3 as the gate dielectric

A 4H-silicon carbide metal-insulator-semiconductor structure with ultra-thin Al₂O₃ as the gate dielectric, deposited by atomic layer deposition on the epitaxial layer of a 4H-SiC (0001) 8⁰N-/N+ substrate, has been fabricated. The experimental results indicate that the prepared ultra-thin Al₂O₃ gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25 MV/cm, excellent interface properties (1×10¹⁴ cm^-2) and low gate-leakage current (I_G = 1 × 10^-3 A/cm^-2@E_ox = 8 MV/cm). Analysis of the current conduction mechanism on the deposited Al₂O₃ gate dielectric was also systematically performed. The confirmed conduction mechanisms consisted of Fowler-Nordheim (FN) tunneling, the Frenkel-Poole mechanism, direct tunneling and Schottky emission, and the dominant current conduction mechanism depends on the applied electrical field. When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al₂O₃ is 1.4 eV, which can meet the requirements of silicon carbide metal-insulator-semiconductor transistor devices.     

Field polarity dependent nucleation of superconductivity in quasi-one-dimensional magnetic templates

We investigate the nucleation of superconductivity in an Al/Al₂O₃/Py trilayer system by electrical transport measurements. Magnetic force microscopy images taken at room temperature show that the 0.7 μm thick Py-film form stripes of magnetic domains with alternating out-of-plane stray field. After applying a strong out of plane magnetic field H the superconductor/normal phase boundary becomes asymmetric with respect to H = 0. This lack of field polarity symmetry results from the unbalanced size distribution of domains with opposite polarity.     

Al2O3绝缘层的AlGaN/GaN MOSHEMT器件研究

在研制AlGaN/GaN HEMT器件的基础上,采用ALD法制备了Al₂O₃ AlGaN/GaN MOSHEMT器件.通过X射线光电子能谱测试表明在AlGaN/GaN异质结材料上成功淀积了Al₂O₃薄膜.根据对HEMT和MOSHEMT器件肖特基电容、器件输出以及转移特性的测试进行分析发现：所制备的Al₂O₃薄膜与AlGaN外延层间界面态密度较小,因而MOSHEMT器件呈现出较 关键词： 2O₃')" href="#">Al₂O₃ ALD GaN MOSHEMT     

Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric

Atomic layer deposited (ALD) Al₂O₃/dry-oxidized ultrathin SiO₂ films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al₂O₃/SiO₂, Al₂O₃, and SiO₂) are fabricated and compared with each other. The I-V measurements show that the Al₂O₃/SiO₂ stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO₂, and a relatively low gate leakage current of 1× 10^-7 A/cm² at electric field of 4 MV/cm comparable to Al₂O₃. The 1-MHz high frequency C-V measurements exhibit that the Al₂O₃/SiO₂ stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.     

Effect of Al2O3 on the electrical properties of ZnO-Pr6O11-based varistor ceramics

The effect of Al₂O₃ on the electrical properties of ZnO-Pr₆O₁₁-based ceramics is investigated in this work. The average grain size of ZnO increased as the Al₂O₃ content increased from 10.3 to 13.5 μm. It was found that a sample doped with Al₂O₃ of 0.005 mol% showed the highest nonlinear current-voltage characteristics with a nonlinear exponent of 43.8 and a leakage current of 0.66 μA. When the Al₂O₃ content was increased, the donor concentration was increased from 0.51×10¹⁸/cm³ to 1.59×10¹⁸/cm³, but the barrier height was decreased from 1.01 to 0.87 eV. The best electrical stability against aging stress was obtained by doping Al₂O₃ of 0.001 mol%.