The temperature and light intensity dependence of photorefraction in LiNbO3

In the paper the dependence of the photorefraction (PhR) in LiNbO₃ and LiNbO₃−Fe (0.1 wt%, 0.3wt%) crystals on light intensity (within 10¹⁶–10²³ quanta·cm⁻²·s⁻¹ at wavelengths 496.5 nm and 600 nm) and temperature (in the region 100–500 K) is studied. For all the crystals the limiting values of PhR are similar and atT=293 K Δn _sat ^lim ≈3·10⁻³. In LiNbO₃ the temperature dependence of PhR in the range 100–500 K requires to take into account at least two trapping centres.     

Determination of Trace Mercury by Solid Substrate-Room Temperature Phosphorimetry Quenching Method Based on Catalytic Effect of Hg2+on Formation of the Ion Association Complex [Sn(XO)6]4+·[(Fin)4]

A new method for the determination of trace mercury by solid substrate-room temperature phosphorimetry (SS-RTP) quenching method has been established. In glycine-HCl buffer solution, xylenol orange (XO) can react with Sn⁴⁺ to form the complex [Sn(XO)₆]⁴⁺. [Sn(XO)₆]⁴⁺ can interact with Fin⁻ (fluorescein anion) to form the ion associate [Sn(XO)₆]⁴⁺·[(Fin)₄]⁻, which can emit strong and stable room temperature phosphorescence (RTP) on polyamide membrane (PAM). Hg²⁺ can catalyze H₂O₂ oxidizing the ion association complex [Sn(XO)₆]⁴⁺·[(Fin)₄]⁻, which causes the RTP to quench. The ΔIp value is directly proportional to the concentration of Hg²⁺ in the range of 0.016–1.6 fg spot⁻¹ (corresponding concentration: 0.040–4.0 pg ml⁻¹, 0.40 μl spot⁻¹), and the regression equation of working cure is ΔIp=10.03+83.15 m Hg²⁺ (fg spot⁻¹), (r=0.9987, n=6) and the detection limit (LD) is 3.6 ag spot⁻¹(corresponding concentration: 9.0×10^–15 g ml⁻¹, the sample volume: 0.4 μl). This simple, rapid, accurate method is of high selectivity and good repeatability, and it has been successfully applied to the determination of trace mercury in real samples. The reaction mechanism for catalyzing H₂O₂ oxidizing the ion association complex ([Sn(XO)₆]⁴⁺·[(Fin)₄]⁻) SS-RTP quenching method to determine trace mercury is also discussed.     

Magnetoresistance and magnetic ordering in praseodymium and neodymium hexaborides

The magnetoresistance Δρ/ρ of single-crystal samples of praseodymium and neodymium hexaborides (PrB₆ and NdB₆) has been measured at temperatures ranging from 2 to 20 K in a magnetic field of up to 80 kOe. The results obtained have revealed a crossover of the regime from a small negative magnetoresistance in the paramagnetic state to a large positive magnetoresistive effect in magnetically ordered phases of the PrB₆ and NdB₆ compounds. An analysis of the dependences Δρ(H)/ρ has made it possible to separate three contributions to the magnetoresistance for the compounds under investigation. In addition to the main negative contribution, which is quadratic in the magnetic field (−Δρ/ρ ∝ H ²), a linear positive contribution (Δρ/ρ ∝ H) and a nonlinear ferromagnetic contribution have been found. Upon transition to a magnetically ordered state, the linear positive component in the magnetoresistance of the PrB₆ and NdB₆ compounds becomes dominant, whereas the quadratic contribution to the negative magnetoresistance is completely suppressed in the commensurate magnetic phase of these compounds. The presence of several components in the magnetoresistance has been explained by assuming that, in the antiferromagnetic phases of PrB₆ and NdB₆, ferromagnetic nanoregions (ferrons) are formed in the 5d band in the vicinity of the rareearth ions. The origin of the quadratic contribution to the negative magnetoresistance is interpreted in terms of the Yosida model, which takes into account scattering of conduction electrons by localized magnetic moments of rare-earth ions. Within the approach used, the local magnetic susceptibility χ_loc has been estimated. It has been demonstrated that, in the temperature range T _N < T < 20 K, the behavior of the local magnetic susceptibility χ_loc for the compounds under investigation can be described with good accuracy by the Curie-Weiss dependence χ_loc ∝ (T − Θ _p )⁻¹.     

Magnetoresistance of the semiconducting spinelide Cu0.625Ga0.375Cr2Se4 having a low-temperature long-range magnetic order-spin glass transition

A study is reported of the dependence of magnetoresistance Δρ/ρ on the square of magnetization σ ² of the semiconducting spinelide Cu_0.625Ga_0.375Cr₂Se₄, which exhibits a low-temperature transition from long-range magnetic order (LRMO) to the spin glass (SG) state in strong magnetic fields. It is shown that at the freezing temperature T _f the Δρ/ρ(σ ²) relations change their slope, and that below T _f this slope is about one half that for T>T f. This finding, together with the earlier observation that the freezing temperature does not depend on the frequency of the ac magnetic field in which it was measured, suggests that the spin-glass phase consists of spins of individual Cr³⁺ ions, and that the SG-LRMO crossover is a phase transition. Fiz. Tverd. Tela (St. Petersburg) 40, 315–317 (February 1998)     

Double spin asymmetry in exclusive ρ0 muoproduction at COMPASS

The longitudinal double spin asymmetry A₁ ^ρ for exclusive leptoproduction of ρ⁰ mesons, μ+N→μ+N+ρ, is studied using the COMPASS 2002 and 2003 data. The measured reaction is incoherent exclusive ρ⁰ production on polarised deuterons. The Q² and x dependence of A₁ ^ρ is presented in a wide kinematical range, 3×10^-3<Q²< 7 (GeV/c)² and 5×10^-5<x<0.05. The results presented are the first measurements of A₁ ^ρ at small Q² (Q²< 0.1 (GeV/c)²) and small x (x<3×10^-3). The asymmetry is in general compatible with zero in the whole kinematical range. PACS 13.60.Le; 13.88.+e     

Dislocational kinetics in the intense deformation of fcc single crystals

The stability of the dislocational subsystem of fcc single crystals deformed in dynamic conditions is investigated. It is shown that, depending on the deformational conditions, the system may have one or two steady states, one of which is ρ _s ⁽¹⁾ . When the system has one trivial steady state, it may be stable or unstable. In some conditions, a second unstable point ρ _s ⁽²⁾ appears; in this case, ρ _s ⁽¹⁾ is stable. Tomsk State Architectural and Building Academy. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 43–48, August, 1997.     

Radiation damages under irradiation of the BCS superconductor MgB<Subscript>2</Subscript> by high-energy electrons

This paper reports on the results of investigations of the influence of irradiation of the two-band BCS superconductor MgB₂ by electrons with an average energy $ \bar {\rm E} $ \bar {\rm E} ∼ 10 MeV at high doses (0 ≤ ϕt ≤ ∼2.5 × 10¹⁸ cm⁻²) on the temperature and width of the transition to the superconducting state, the temperature dependence of the electrical resistivity in the normal state, the crystal lattice parameters, and the diffraction line intensity. An increase in the electron irradiation dose ϕt leads to the following effects: a decrease in the critical temperature T _c ; an increase in the width of the superconducting transition ΔT _c ; and a decrease in the “residual electrical resistivity” ρ_{273 K}/ρ_{40 K}, in the parameters a and c of the hexagonal crystal lattice, and in the ratio between the diffraction line intensities I ₁₁₀/I ₁₀₀. From analyzing the results obtained, it has been established that the main type of radiation damages under irradiation of the BCS superconductor MgB₂ by high-energy electrons is the formation of vacancies in the B sublattice, which leads to a narrowing of the large band gap Δ_σ on the Fermi surface.     

Properties of Hg implanted Hg1? x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1−x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W⁻¹, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W⁻¹ were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W⁻¹ at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance. Work supported by CNR-CISE contract No. 73.01435.     

Structural and phase transformations in Ni3Fe during high-dose ion implantation

The results are given for experimental studies of the structural-phase state formed in the surface and nearsurface layers of a disordered polycrystalline Ni₃Fe alloy during high-dose ion implantation. The studies used Auger electron spectroscopy, transmission electron microscopy, x-ray structural analysis, and microhardness measurements. The ion implantation was done using the “Raduga” vacuum arc source with a multicomponent cathode of composition Zr (89.5 wt. %)+C+N+O with an acceleration voltage of 50 kV. The implanted ion dose was varied in the range (6.0·10¹⁶–6.0·10¹⁷) ions/cm². It was established that in the surface layer which is alloyed during ion implantation there is amorphization with simulataneous formation of finely dispersed ZrO₂ particles whose dimensions increase with increasing implanted ion dose; this is accompanied by an increased internal mechanical stress. Beyond the ion-implanted layer a sublayer about 10 μm thick with a high dislocation density is formed (the “long-range action” effect). The results of microhardness measurements correlate with the data from structural studies. Institute of the Physics of Strength and Materials Science, Siberian Section, Russian Academy of Science; Tomsk State University—Architectural-Construction University; and Scientific Research Institute for Nuclear Physics at Tomsk Polytechnic University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 15–24, November, 1998.     

Microwave spectrum ofcis 3-fluorophenol

The microwave spectrum ofcis 3-fluorophenol involving rotational states up toJ=28 has been observed and analysed in the frequency range 23–25 GHz in the ground vibrational state at room temperature. Analysis yields three rotational and five quartic centrifugal distortion constants. A tentativer ₀ structure has been proposed satisfying the observed rotational constants. The small value of the inertia defect Δ=0·07 confirms the planarity of the conformer.     

Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in <Emphasis Type="Italic">p</Emphasis>-Si/SiGe/Si structures with an anisotropic <Emphasis Type="Italic">g</Emphasis> factor

Magnetoresistivity ρ _xx and ρ _xy and the acoustoelectronic effects are measured in p-Si/SiGe/Si with an impurity concentration p = 1.99 × 10¹¹ cm⁻² in the temperature range 0.3–2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective g factor on the angle of magnetic field tilt θ to the normal to the plane of a two-dimensional p-Si/SiGe/Si channel is determined. A first-order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor ν = 2 at θ ≈ 59°–60°.     

Ferroelectric and phase transition studies in cesium nitrate: poly(vinyl?alcohol)?composite films

The composite films of cesium nitrate (CsNO₃) and poly(vinyl alcohol) (PVA) with varying composition were prepared using the solvent cast method. The hysteresis loop characteristics show optimum remnant polarization (P _r ) of 2.75 μC/cm² at 50 wt.% composition. The field emission scanning electron microscope images show a nearly homogeneous distribution of CsNO₃ grains in the 50 wt.% composite film. The temperature dependence of the remnant polarization shows a diffused transition temperature range from the ferroelectric to the paraelectric phase and this has been attributed to the reduced enthalpy. The butterfly features of the dielectric constant–voltage (ε–V) characteristics have been attributed to polarization switching.     

Magnetic, electrical, and optical properties of Ca1 ? x Ce x MnO3 ( x ≤ 0.12) single crystals

The magnetic, electrical, and optical properties of Ca_{1 − x} Ce _x MnO₃ (x≤0.12) manganite single crystals are investigated with the aim of revealing the specific features of the multiphase electronic and magnetic state as a function of the cerium concentration and the atmosphere used for growing single crystals. It is found that the concentration dependence of the low-temperature magnetization M(x) of the single crystals is shifted toward the high-concentration range as compared to the corresponding dependence of the polycrystals, which is explained by the predominant cation deficiency. The electrical resistivity and the reflection spectra of the single crystals in the infrared spectral range indicate that charge carriers exhibit a band nature at temperatures close to room temperature. The temperature dependence of the electrical resistivity of the single crystal with x = 0.08, which has the maximum magnetization in the studied series of Ca_{1 − x} Ce _x MnO₃ compounds, unlike polycrystals, exhibits a metallic behavior over the entire temperature range. The G-type antiferromagnetic phase with the Néel and Curie temperatures T _N(G) = T _C = 100 K is characterized by maxima of the electrical resistivity ρ and the magnetoresistance Δρ/ρ = |(ρ₀ − ρ _H )/ρ₀| = 38% in the magnetic field H = 90 kOe. The magnetoresistance Δρ/ρ of the single crystals at cerium concentrations x = 0.10 and 0.12 with variations in temperature exhibit three specific features: near the temperature of charge ordering T _co, near the temperature of the magnetic phase transition to the C-type antiferromagnetic phase T _N(C), and near the temperature of the phase transition to the magnetic charge-ordered phase T _N(MCO). An anomalous temperature dependence of the magnetization is revealed for a single crystal with x = 0.10 grown in oxygen at a pressure of 5 atm, which is explained by the presence of regions with hole conductivity due to cation deficiency. The inhomogeneous electronic and magnetic state is associated with the interrelation of the charge, orbital, and spin orderings. Original Russian Text ? N.N. Loshkareva, A.V. Korolev, N.I. Solin, E.V. Mostovshchikova, S.V. Naumov, N.V. Kostromitina, A.M. Balbashov, 2009, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 135, No. 1, pp. 98–107.     

Crystallization of a dusty plasma in the positive column of a glow discharge

The formation of macroscopic ordered structures in the standing striations of a stationary glow discharge in Ne is observed. A Coulomb quasicrystal is formed by spherical glass particles with diameters of 50–63 μm and charge Z _p~7·10⁵ e. The interparticle distance is approximately 300 μm. This corresponds to a nonideality parameter Γ~5·10⁴, which leads to crystallization in the Yukawa model. The factors leading to the formation of a quasicrystal in the striations are discussed. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 2, 86–91 (25 July 1996)     

Saturable absorbers for passive Q-switching of erbium lasers emitting in the region of 3 μm

The phototropic properties of Fe:ZnSe, Co:ZnSe, and Co:ZnS single crystals have been investigated. It is shown that these crystals can be used to advantage as the saturable absorbers in solid-state erbium lasers emitting in the region of the 3-μm range. The absorption cross sections of the ground states of the Co²⁺ ion in the ZnSe (σ_GSA = 11·10⁻²⁰ cm²) and ZnS (σ_GSA = 5.6·10⁻²⁰ cm²) crystals and of the Fe²⁺ ion in the ZnSe (σ_GSA = 50·10⁻²⁰ cm²) crystal at λ = 2.79 μm were determined experimentally. It has been established that the above-indicated crystals in the excited state absorb light weakly. The use of these crystals as passive Q switches made it possible to realize, for the first time, the regime of Q-switching of a Cr,Er:YSGG laser emitting at a wavelength of 2.79 μm. Single pulses with an energy of 60 mJ and a duration of 170 nsec were obtained in the regime of passive Q-switching. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 747–751, November–December, 2005.     

Anisotropic magnetoresistance of partially relaxed SrRuO3 films

The SrRuO₃ films (50 nm thick) grown by laser evaporation on (001)(LaAlO₃)_0.3 + (Sr₂AlTaO₆)_0.7 substrates were under partially relaxed biaxial compressive mechanical stresses. The films consisted of crystallites with lateral dimensions of 40–100 nm and a relative azimuthal misorientation of about 0.9°. Ferromagnetic ordering of spins in the SrRuO₃ films was manifested by a change in the slope of the temperature dependence of their electrical resistivity ρ at T ≈ 155 K. For a magnetic field H parallel to the measuring current, the maximum values (∼7.5%) of the magnetoresistance MR = [ρ(μ₀ H = 5 T) − ρ(μ₀ H = 0)]/ρ(μ₀ H = 0) were observed at temperatures of about 100 K. At T = 95 K (μ₀ H = 5 T), the anisotropic magnetoresistance of the films was 8% and increased by a factor of approximately 1.5 with decreasing temperature to 4.2 K.     

Comparison of optical properties and mechanical/electrical degradation of some low density polyethylene-and polypropylene-based polymer blends

In this study, the optical properties as well as mechanical and electrical degradation of low-density polyethylene (LDPE)/polypropylene fiber (PP fiber) (10–50% PP fiber), polypropylene (PP)/PP fiber (10–50% PP fiber), and LDPE/diamond (0.1–3% diamond) blends, which are prepared by hot pressing method, with changing thicknesses ranging from 30 to 225 μm, are compared. The spectra, in the wavelength range 200–2500 nm, are examined. Based on optical absorption spectra obtained, Tauc graphs are plotted. Determined values of the direct optical energy gap (E _d ^opt ), the indirect optical energy gap (E _i ^opt ), the width of the band (ΔE), and ultraviolet transmittance (T_UV) are listed. The direct E _d ^opt and indirect E _i ^opt values for organic blends are in the range of 3.10–3.17 eV and 1.52–2.99 eV; for inorganic blends they are 1.80–4.13 eV and 1.55–4.7 eV respectively. The electrical strength (ε) and the mechanical tension (σ) have been investigated, and graphs (the dependence of the electrical life time log τ_ε on ε) are given. The experimental results are analyzed from the viewpoint of the validity of the thermofluctuation theory. LDPE and LDPE/0.5% diamond composite parameters consecutively changed: σ from 68 to 82 MPa, ε from 60·10⁶ to 85·10⁶ V/m, mechanical lifetime τ_σ from 10 to 1.5·10⁵ sec, electrical lifetime τ_ε from 2· 10³ to 2·10⁵ sec, and structure-sensitive parameters γ and χ — from 1.48 to 1.18 (J)MPa/mole and from 0.97 to 0.70 (J)Vm⁻¹/mole respectively. The values of mechanical and electrical durability were observed to increase by 20 and 41%, respectively, for LDPE/0.5% diamond composite. Published in Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 677–683, September–October, 2007.     

Low-temperature resistivity of YBa2Cu3O6+x single crystals in the normal state

A scan of the superconductor-nonsuperconductor transformation in single crystals of YBa₂Cu₃O_6+x (x≈0.37) is done in two alternative ways, namely, by applying a magnetic field and by reducing the hole concentration through oxygen rearrangement. The in-plane normal-state resistivity ρ_ab obtained in the two cases is quite similar; its temperature dependence can be fitted by a logarithmic law in a temperature range of almost two decades. However, an alternative representation of the temperature dependence of σ_ab=1/ ρ _ab by a power law, typical for a 3D material near a metal-insulator transition, is also plausible. The vertical conductivity σ_c=1/ρ_c followed a power law, and neither σ_c(T), nor ρ_c(T) could be fitted by log T. It follows from the ρ_c measurements that the transformation at T=0 is split into two transitions: superconductor-normal-metal and normal-metal-insulator. In our samples, they are separated in oxygen content by Δx≈0.025. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 11, 834–839 (10 June 1997) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Probing the field-induced variation of the chemical potential in Bi2Sr2CaCu2Oy via magneto-thermopower measurements

Approximating the shape of the magneto-thermoelectric power (TEP) ΔS(T,H) measured in Bi₂Sr₂CaCu₂O_y by an asymmetric linear triangle of the form ΔS(T,H)≃S _p (H)±B ^±(H)(T _c −T) with positive B ⁻(H) and B ⁺(H) defined below and above T _c , we observe that B ⁺(H) ≃2B ⁻(H). To account for this asymmetry, we explicitly introduce the field-dependent chemical potential μ(H) of holes into the Ginzburg-Landau theory and calculate both an average ΔS _av(T,H) and fluctuation contribution ΔS _fl(T,H) to the total magneto-TEP ΔS(T,H). As a result, we find a rather simple relationship between the field-induced variation of the chemical potential in this material and the above-mentioned magneto-TEP data around T _c , viz. Δ μ(H)∝S _p (H). Zh. éksp. Teor. Fiz. 116, 257–262 (July 1999) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.     

The Muonic Hydrogen Lamb Shift Experiment at PSI

A measurement of the 2S Lamb shift in muonic hydrogen (μ⁻p) is being prepared at the Paul Scherrer Institute (PSI). The goal of the experiment is to measure the energy difference ΔE(2⁵ P _3/2−2³ S _1/2) by laser spectroscopy (λ≈6μm) to a precision of 30 ppm and to deduce the root mean square (rms) proton charge radius with 10⁻³ relative accuracy, 20 times more precise than presently known. An important prerequisite to this experiment is the availability of long-lived μp_2S -atoms. A 2S-lifetime of ∼1 μs – sufficiently long to perform the laser experiment – at H₂ gas pressures of 1–2 hPa was deduced from recent measurements of the collisional 2S-quenching rate. A new low-energy negative muon beam yields an order of magnitude more muon stops in a small low-density gas volume than a conventional cloud muon beam. A stack of ultra-thin carbon foils is the key element of a fast detector for keV-muons. The development of a 2 keV X-ray detector and a 3-stage laser system providing 0.5 mJ laser pulses at 6 μm is on the way. This revised version was published online in August 2006 with corrections to the Cover Date.