抛物量子点中极化子的温度依赖性

根据Pekar类型变分法在电子与声子强耦合的条件下计算了抛物量子点中强耦合极化子的基态能量.讨论了电子-声子耦合强度,量子点受限长度对基态能量的影响,同时引进温度参数并讨论了其对基态能量的影响,结果得出在低温的条件下,耦合强度和受限长度对基态的能量影响起主要作用;在高温的条件下,温度对基态的能量影响起主要作用,而耦合强度与受限长度的影响很小.     

InN量子点的液滴外延及物性表征

由于1. 55μm波段广泛应用于通信领域,为了探索不同生长温度对InN量子点的形貌影响,并且实现自组装InN量子点在1. 55μm通信波段的发光,对InN量子点的液滴外延及物性进行了相关研究。首先利用射频等离子体辅助分子束外延(PA-MBE)技术在GaN模板上,采用液滴外延方法在3种温度下生长了InN量子点结构。生长过程中靠反射高能电子衍射(RHEED)对样品进行原位监控。原子力显微镜(AFM)表征结果表明随着生长温度升高,量子点尺寸变大,密度减小。在生长温度350℃和400℃下,观测到了量子点;当温度高于450℃时,未观测到InN量子点。当生长温度为400℃时,量子点形貌最好,密度为6×10~8/cm~2,对400℃下生长的InN量子点进行了变温PL测试,成功得到InN量子点在1. 55μm波段附近的光致发光,并且随着测试温度的升高,量子点的发光峰位发生了先红移后蓝移最后又红移的S型曲线变化,这种量子点有望在未来应用于量子通信领域。     

Enhanced Cross-Phase Modulation via Phase Control in a Quantum dot Nanostructure

A four-level quantum dot (QD) nanostructure interacting with four fields (two weak near-infrared (NIR) pulses and two control fields) forms the well-known double-cascade configuration. We investigate the cross-phase modulation (XPM) between the two NIR pulses. The results show, in such a closed-loop scheme, that the XPM can be greatly enhanced, while the linear absorption and two-photon absorption (gain) can be efficiently depressed by tuning the relative phase among the applied fields. This protocol may have potential applications in NIR all-optical switch design and quantum information processing with the solid-state materials.     

New material systems for third generation infrared photodetectors

Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed. Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs). In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.     

Quantification of DNT isomers by capillary liquid chromatography using at‐line SERS detection or multivariate analysis of SERS spectra of DNT isomer mixtures

With the global surge of terrorism and the increased use of bombs in terrorist attacks, national defence and security departments now demand techniques for quick and reliable analysis, in particular, for detection of toxic and explosive substances. One approach is to separate different analytes and matrix material before detection. In this work microliquid chromatography was used to separate two dinitrotoluene (DNT) isomers prior to detection via online UV–Vis spectroscopy. For identification, retention times were compared with reference samples and quantification was done by integration of UV–Vis absorption. Because UV detection is not particularly selective, Raman microscopic analysis was coupled to the liquid chromatography using a flow‐through microdispenser. Because DNT is difficult to detect with conventional Raman spectroscopy, the sensitivity was increased via surface‐enhanced Raman scattering (SERS) using silver‐quantum dots. Different analytical approaches to identify and quantify mixtures of two DNT isomers were evaluated. Good quantitative results were obtained using UV detection after microchromatographic separation (Limit of Detection: 0.11 and 0.06 for 2,4‐DNT and 2,6‐DNT). Coupling with SERS allowed for more confident differentiation between the highly structurally similar DNT isomers because of the additional spectral information provided by SERS. The application of a partial least squares algorithm also allowed direct SERS detection of DNT mixtures (root mean square error of prediction: 0.82 and 0.79 mg·L^–1 for 2,4‐DNT and 2,6‐DNT), circumventing the time‐consuming separation step completely. Copyright © 2012 John Wiley & Sons, Ltd.     

Self quenched quantum dot avalanche photodetector for mid-infrared single photon detection

In this paper a single photon detector with operating wavelength of 6 μm is proposed and its performance characteristics are studied. Intersubband absorption of single photons in quantum dot layers leads to creation of photoelectrons which are injected to multiplication region and under above breakdown condition a large output pulse is generated. The detector is designed for self quenching operation in which an additional layer called transient carrier buffer (TCB) is used for trapping of backward avalanche generated holes at the interface of TCB and charge layer. The accumulated holes impose an additional charge in such a way that the voltage across the multiplication region drops and the output is quenched. A model is developed to analyze the performance of detector and results of simulation predict detection efficiency about 12% at T = 150 K. Also the quenching and recovering performance of detector is studied and results show that both higher temperatures and higher bias improve dynamics of detector. However higher temperatures result in higher dark count rate.     

CdSe/ZnS电化学发光法测定去甲肾上腺素

以巯基丙酸为稳定剂制备了水溶性CdSe/ZnS量子点,并采用滴涂法制备了CdSe/ZnS修饰的金电极（CdSe/ZnS/GE）,研究其电化学发光（ECL）性质,考察了pH、CdSe/ZnS浓度、扫描速度、静置时间等实验条件对ECL强度的影响。结果表明,在碱性溶液中,去甲肾上腺素（NE）在鲁米诺溶液中对CdSe/ZnS的电化学发光信号有明显的增敏作用,由此建立了一种检测去甲肾上腺素的新方法。当去甲肾上腺素的浓度（C_NE）在2.3×10^-5~1.0×10^-8 mol/L范围内时,去甲肾上腺素的浓度与相对电化学发光强度呈现良好的线性关系。线性回归方程为ΔI_ECL=118.788C_NE-15.333（R=0.994 4）,最低检测限（S/N=3）为0.33×10^-8 mol/L。     

基于量子阱结构的高效磷光有机电致发光器件

采用多重量子阱结构制作了高效红色磷光有机电致发光器件。以4,4'-bis(N-carbazolyl)-1,10-biphenyl (CBP)掺杂bis(1-phenyl-isoquinoline)(Acetylacetonato) iridium(Ⅲ) (Ir(piq)₂(acac))为发光层,4,4'-bis(N-carbazolyl)-1,10-biphenyl(Bphen)为电荷控制层,形成了Ⅱ型双量子阱结构,器件的最大亮度为15 000 cd/m²,最大电流效率为7.4 cd/A,相对于参考器件提高了21%。研究结果表明:以Bphen为电荷控制层形成的Ⅱ型多重量子阱结构能有效地将载流子和激子限制在势阱中,并且使空穴和电子的注入更加平衡,从而提高了载流子复合的几率和器件的效率。     

单轴应力对量子阱红外探测器吸收波长的影响

以单轴应力作用下超晶格量子阱应变能带理论为基础,采用电子反射与干涉方法,研究了单轴应力对超晶格能带的影响,推导了单轴应力与超晶格导带子能级的定量关系。以GaAs-AlGaAs-GaAs为例,具体计算了导带中子能级对应力的依赖关系,进而给出了单轴应力对n型AlGaAs-GaAs量子阱红外探测器(QWIP)吸收波长的影响。计算结果表明,随着单轴压应力的增大,量子阱红外探测器的吸收波长表现出较明显的变化。当单轴压力增大到1.3GPa,量子阱红外探测器的吸收峰值移动了将近1.1μm,并且基本与应力呈线性关系。量子阱红外探测器吸收波长连续可调范围5.57～4.46μm。     

有机多层量子阱结构的光致发光特性的研究

采用多源高真空有机分子束沉积系统(OMBDs),将两种有机小分子材料PBD和Alq₃以交替生长的方式,制备了不同厚度的PBD/Alq₃有机多层量子阱结构(OMQWs), 并利用电化学循环伏安法和光吸收分别测定了PBD和Alq₃的最低空分子轨道(LUMO)和最高占据分子轨道(HOMO)。该结构类似于无机半导体中的Ⅰ型量子阱结构,PBD层作为势垒层,Alq3层作为势阱层和发光层,并进行了小角X射线衍射(XRD)的测量。利用荧光光谱研究了OMQWs光致发光(PL)特性,得到随着阱层厚度的降低,光致发光的峰位将蓝移;同时随垒层厚度的减小,PBD的发光峰逐渐消失。利用量子阱结构可以使PBD的能量有效的传递给Alq₃,从而增强Alq₃的发光。     

Investigation of optical properties of modulation doped GaN/AlGaN MQWS nanostructures

Due to many important applications, the group III-nitride semiconductors have recently attracted remarkable attention among the semiconductor researchers and engineers. In this paper, we report on the impact of the extrinsic and temporal carriers on the screening of the polarization internal fields. The optical efficiency of GaN/AlGaN multiple quantum well (MQW) nanostructures were studied by means of photoluminescence (PL) and time-resolved PL measurements. Extrinsic carriers come from Si doping in the barriers while temporal carriers originate when the samples are excited by the laser beam. The emission peaks of MQWs in PL spectra of the undoped and low-doped samples show a shift towards higher energy levels as excitation intensity increases, while the other samples do not exhibit such a phenomenon due to the dominance of the extrinsic carriers. The transient data confirm the results of the PL measurements.     

Quantum confinement effect in β-SiC nanowires

The quantum confinement effect is important in nanoelectronics and optoelectronics applications; however, there is a discrepancy between the theory of quantum confinement, which indicates that band-gap widening occurs only at small sizes, and experimental observations of band-gap widening in large-diameter nanowires (NWs). This paper reports an obvious blue shift of the absorption edge in the UV-visible absorption spectra of SiC NWs with diameters of 50–300 nm. On the basis of quantum confinement theory and high-resolution transmission electron microscopy images of SiC NWs, band-gap widening in SiC NWs with diameters of up to hundreds of nanometers is fully explained; the results could help to explain similar band-gap widening in other NWs with large diameters.     

Double-state controllable optical switching through three tunnel-coupled quantum dots inside waveguide coupled photonic crystal microcavity

We study optical transmission properties of a combined system which is composed of a photonic crystal (PC) microcavity with low quality factor Q, a triple quantum dot (QD) embedded in cavity and two parallel waveguides. We demonstrate that low coupling strength (i.e., the weak coupling regime) between a cavity and a dot, by means of electron tunnel-induced coupling, can lead to a type of double-state controllable optical switching under the experimentally available parameter conditions.     

Fault-Tolerant Quantum Dialogue Without Information Leakage Based on Entanglement Swapping between Two Logical Bell States

At present, the anti-noise property and the information leakage resistant property are two great concerns for quantum dialogue(QD). In this paper, two anti-noise QD protocols without information leakage are presented by using the entanglement swapping technology for two logical Bell states. One works well over a collective-dephasing noise channel, while the other takes effect over a collective-rotation noise channel. The negative influence of noise is erased by using logical Bell states as the traveling quantum states. The problem of information leakage is avoided by swapping entanglement between two logical Bell states. In addition, only Bell state measurements are used for decoding, rather than four-qubit joint measurements.     

Quantum Information Scrambling in Non-Markovian Open Quantum System

In this paper, we investigate the dynamics of a spin chain whose two end spins interact with two independent non-Markovian baths by using the non-Markovian quantum state diffusion (QSD) equation approach. Specifically, two issues about information scrambling in an open quantum system are addressed. The first issue is that tripartite mutual information (TMI) can quantify information scrambling properly via its negative value in a closed system, whether it is still suitable to indicate information scrambling in an open quantum system. We find that negative TMI is not a suitable quantifier of information scrambling in an open quantum system in some cases, while negative tripartite logarithmic negativity (TLN) is an appropriate one. The second one is that up to now almost all information scrambling in open quantum systems reported were focus on a Markovian environment, while the effect of a non-Markovian environment on information scrambling is still elusive. Our results show that the memory effect of an environment will be beneficial to information scrambling. Moreover, it is found that the environment is generally detrimental for information scrambling in the long-term, while in some cases it will be helpful for information scrambling in the short-term.     

Quantum Correlations in Werner Derivatives

Quantum correlations in Werner derivatives are studied with two diferent approaches,i.e.,measurementinduced disturbance(MID)[Phys.Rev.A 77(2008)022301]and ameliorated MID(AMID)[J.Phys.A 44(2011)352002].They are derived via strict deductions with MID while numerically calculated via the measurement optimization with AMID.Interestingly,quantum correlations captured with both approaches are completely coincident.Moreover,some distinct features of the quantum correlations and their underlying physics are exposed via analyses and discussions.     

P(o)schl-Teller势阱中非局域效应对透射光谱的影响

在考虑半导体量子阱中导带电子对外加激光场非局域光学响应的情况下,利用格林函数方法推导出了光透射率的解析表达式,并以典型的GaAs/AlGaAs为材料的P(o)schl-Teller量子势阱为例进行数值计算.计算结果表明,由于电子对激光场的非局域光学响应,半导体量子阱的透射光谱的谱线在共振峰附近出现明显地蓝移,蓝移的大小与量子阱宽度有紧密的联系.在有效的纳米尺度范围内,半导体量子阱越宽,透射谱线的蓝移也就越大.另外,光场强度和量子阱结构参数等因素对透射光谱的影响也被澄清.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

采用多量子阱光折变器件的新型相干光通信接收方案探索

探索一种采用多量子阱光折变器件的新型相干空间光通信接收方案,和传统的差拍方案相比,可以省掉繁琐的中频跟踪电子学系统,并对大气光通信传输常见的波面畸变、偏振面无规律变化及多普勒频移等干扰有所抑制。也报道该方案零拍接收以及器件性能研究的实验结果。