The Application of a Plasma Erosion Opening Switch to a Nanosecond Generator at the Power Level of 1010 W

This paper is devoted to experimental studies of a short-pulse (80 ns) inductive system with a coaxial plasma erosion opening switch (PEOS), operating at the 2-5 × 1010 W level. Scalings of the PEOS and ion diode characteristics with different parameters (PEOS plasma density and velocity, PEOS electrode geometry, load impedance, type and strength of an external magnetic field) were carried out. It was seen that for the most efficient energy and power switching to the load by the PEOS, the following conditions are preferable: high velocity and low density of the plasma flow, negative polarity of the inner PEOS electrode, coincidence of the switch current and injected plasma flow directions, the absence of an external magnetic field, and the presence of an additional self-field in the PEOS region. Power enhancement of a factor of 3 and pulse shortening by a factor of 2 were obtained under optimal conditions.     

Pulsed Power Compression Research by Vacuum Opening Switch at ILE Osaka

The performance of a vacuum fast opening switch in an inductive store pulse compression system was investigated theoretically and experimentally at the Institute of Laser Engineering, Osaka University. A parameter survey for the pulsed power compression system was performed for optimizing the power amplification and efficiency. An analysis of the plasma erosion opening switch (PEOS) showed that a low-density high-injection velocity plasma and a small radius switch is desired for pulse compression. In experiments, the effect of plasma injection velocity and injection polarity on the switch operation was studied on an "inverse pinch" electron beam diode, and high-voltage and high-impedance operation were performed on an ion diode.     

重复频率脉冲强X射线源

 介绍了一台重复率1～2Hz、采用等离子体断路开关和电感储能技术的脉冲强X射线源。距辐射靶0.5m处的峰值剂量率为0.25MGy/s,1m处的平均剂量率为0.15kGy/h,脉宽(FWHM)约为100ns。给出了装置构成、原理及初步调试结果。     

The Jon Beam Opening Switch

Plasma opening switches (POS's) have shown excellent characteristics in pulsed power applications. Proposed POS scaling predicts that the fastest opening time for a given conducted current should occur using a high-velocity low-density plasma as the switch medium. The ion beam opening switch (IBOS) uses a charge-neutral ion beam of 100-300 kV, ? 120 A/cm2 as the switch "plasma." Its velocity of up to 600 cm/?s and density of ~1012/cm3 make this a very fast low-density plasma compared with typical 10 cm/?s and 1013/cm3 POS plasmas. The IBOS has conducted ? 70 kA flowing in a parallel-plate transmission line driven by a 4-? pulser. IBOS opening time is load dependent, being ? 4 ns into a 15-nH load and about twice as long into a 4-? electron diode load. However, switch impedance is not zero during the entire conduction time, rising to ? 3 ? by the time of peak current. Peak current conducted before opening does not vary linearly with either injected ion current or switch axial length. Instead, the conduction current scales with plasma density in the switch, and is nearly independent of switch area until the area is restricted to a narrow (~1 cm) strip.     

“强光一号”等离子体开关及负载稳定性分析

"强光一号"等离子体断路开关(POS)及负载二极管系统工作性能不够稳定,通过分析数据指出POS等离子体源参数差异性是导致系统不稳定的主要原因。POS等离子体源参数重复性测量结果表明,在开关断路时刻等离子体源瞬时发射等离子体密度重复性极差在10%左右,而开关区间累积等离子体密度极差超过100%。开关区间累积等离子体密度和阴极重粒子发射会对POS断路性能产生显著影响。计算表明开关区间累积等离子体密度差异对POS断路电流阈值影响达到200kA,与运行数据统计结果一致;在断路电流阈值相同的条件下,阴极物质逸出对二极管电压影响显著,MCNP程序计算结果表明,产生辐射剂量差别可以达到80%,与统计数据相当。     

Computer Simulation of High-Power Ion Beam Generation Using the Plasma Erosion Opening Switch and Microsecond Store Systems

This paper deals with computer simulation of plasma erosion opening switch (PEOS) operation in the context of short-pulse high-power ion beam (HPIB) generation in microsecond store systems. The scaling of PEOS parameters and ion diode characteristics with various operating conditions was determined. The simulations showed the best PEOS characteristics for a hydrogen plasma (i.e., the lowest mass) with a high flow velocity and low density, although for some applications a plasma with A/Z > 1 may be preferable. It was shown that the efficiency of HPIB generation in the diode depends on its location relative to the PEOS, the time delay of anode plasma formation, the use of a spiral electrode in the PEOS region, and the use of an arrangement involving an ion return current bypass through the PEOS region. The optimization of the PEOS and ion diode with coaxial configurations and 100 kJ stored in the 600-kV Marx yielded a 16-percent overall efficiency HPIB generation in the diode, with a diode voltage and power of 4.2 MV and 0.42 TW, respectively.     

A Summary of Experimental Results from Inductive Store Pulse Compression Experiments with Plasma Opening Switches on the Pulse Power Generators Pollux and KALIF

Experimental results from inductive store pulse compression experiments with plasma opening switches are presented. The experiments have been performed on the high-power pulse generators Pollux and KALIF operating at nominal powers of 0.1 and 1.5 TW, respectively. A large range of switch geometries, currents, voltages, and magnetic fields have been investigated. Diode loads with falling and rising impedance characteristics have been applied. A peak-power multiplication of 2 has been demonstrated in the Pollux experiments. The power multiplication in the present experiments was limited by the lack of magnetic insulation in the switch and adjacent feed section at higher load impedances. The limitations were much more severe than predicted by laminar flow theories of magnetic insulation. Generally, magnetic insulation was superior, with diode loads having rising impedance characteristics.     

Fast processes on cathode surface resulting in pseudosparkdischarge

An alternative mechanism for emission during the high-current phase of a pseudospark discharge is presented. A high current density is provided by multiple arc cathode spots which appear due to cathode-plasma breakdown. The model of plasma formation in the main gap of the pseudospark switch is discussed, together with conditions required for the initiation of spot during some tens of nanoseconds, the appearance of a moving double plasma layer, and high-current transport through the plasma-filled diode     

Scaling microsecond-conduction-time plasma opening switch operationfrom 2 to 5 MA

We describe experiments in which conduction currents were successfully scaled from 2 to 5 MA for conduction times around 1 μs in a coaxial geometry plasma opening switch (POS) on the 4 MJ ACE 4 driver. Simple models of POS operation, derived from previous work, were used to scale successful results from drivers that operate at microsecond conduction times, but at currents below 1 MA. An MHD model for the conduction phase was verified in which the square root of the plasma density is approximately proportional to the product of conduction time and peak conduction current divided by the switch radius and length. For the opening phase, a model where the POS gap is approximately constant when the local plasma conditions at the beginning of the conduction phase are kept roughly the same is consistent with the observed POS opening voltages of at least 1 MV. The conduction current was increased by increasing the POS cathode radius from 6 to 20 cm while maintaining roughly the same plasma density. This increase in radius resulted in the observed increase in the conduction-current/conduction-time product from 2 to 5 MA μs while maintaining MV POS voltages     

Application of a ferroelectric plasma cathode as a high-current switch

In this paper the parameters of two types of high-current switches based on ferroelectric BaTiO₃ ignition are presented. Both types of switches showed a reliable and controllable operation with a repetition rate of several Hz. The first type is a vacuum two-electrode switch ignited by the plasma which is generated by a BaTiO₃ cathode. This type of switch was tested in the voltage range of 3-25 kV and switched current amplitude of 2-15 kA with either negative or positive polarity of the high-voltage electrode. The second type is a BaTiO₃ surface flashover strip-like switch ignited by a driving pulse which has an amplitude of several kV. It was shown that the application of the driving pulse (>10 kV) leads to the appearance of many non-complete surface discharges which transform further to a multi-channel discharge. This type of switch was tested in the voltage range of 1-25 kV and current amplitude of 0.5-15 kA. The design of the switches, their lifetime, the time jitter and the parameters of the switched current for different discharge conditions are presented. Received 5 November 2001     

高密度等离子体融断开关融蚀现象的粒子模拟研究

 利用自行研制的2.5维全电磁柱坐标粒子模拟程序对高密度等离子体融断开关融断区域中的融蚀现象进行了模拟研究,详细地介绍了计算模型的建立以及复杂边界的算法处理。模拟结果表明在融断开关导通电流的最后阶段,由于磁压力、磁场渗透作用和非中性静电融蚀作用,在融断区域的阴极附近会形成一定宽度的真空鞘层。由于等离子体密度的下降以及初始真空鞘层的存在,使得即使只有较小的离子电流,融蚀机制也完全可以导致PEOS最终断开。     

短脉冲高剂量率γ射线源技术研究

 介绍了“强光一号”加速器产生宽度约20 ns的高剂量率脉冲γ射线的工作过程;分析了短脉冲γ射线源二极管的管绝缘体和真空磁绝缘传输线的结构与绝缘性能;说明了等离子体断路开关的工作特性;阐述了二极管工作阻抗和阴阳极的设计原则与设计参数。给出了不同短脉冲γ射线源的实验结果,得到了3种辐射参数：脉冲宽度约20 ns,辐射面积为2,30和100 cm²时,相应的辐射剂量率为10¹¹,0.7×10¹¹和10¹⁰ Gy/s。     

Study of repetitive plasma opening switch generator technology

Repetitive plasma opening switch (POS) research for X-ray and electron beam generators for commercial applications is reviewed. This research was started on the RS-20 generator in 1991 with submicrosecond conduction times, 100 kA currents, and MV voltages. In the experiments wall-plug to electron beam production efficiency was increased from 10-50%. Maximum voltage obtained at POS was 3 MV starting from 0.8 MV at the Marx generator. POS operation was improved using an applied external magnetic field for the opening phase. Diode current and total generator efficiency were increased by combining the POS and diode system in one technology unit. For the opening phase of the high-impedance, repetitive POS, a set of conditions based on early POS experiments in the Kurchatov Institute were proposed. Repetitive POS generators have obtained peak X-ray dose rates of 1 MGy/s and electron dose rates of 10 GGy/s. This may be important for applications as pulsed irradiation may cause more efficient sterilization at lower doses. An X-ray generator based on repetitive POS technology at 5 MV and 200 kW in the electron beam is proposed     

High-gradient plasma-wakefield acceleration with two subpicosecond electron bunches

A plasma-wakefield experiment is presented where two 60 MeV subpicosecond electron bunches are sent into a plasma produced by a capillary discharge. Both bunches are shorter than the plasma wavelength, and the phase of the second bunch relative to the plasma wave is adjusted by tuning the plasma density. It is shown that the second bunch experiences a 150 MeV/m loaded accelerating gradient in the wakefield driven by the first bunch. This is the first experiment to directly demonstrate high-gradient, controlled acceleration of a short-pulse trailing electron bunch in a high-density plasma.     

Interferometry of flashboard and cable-gun plasma opening switcheson Hawk

Interferometry of plasma opening switch (POS) plasmas on the Hawk generator has shown many important features of the plasma evolution during conduction and opening. Opening occurs when a low-density region forms at a radial location determined by plasma redistribution during the conduction phase, consistent with J×B forces and the measured plasma distributions produced by the sources alone. High neutral densities have been detected in the POS region during conduction. Low-density plasma appears between the POS and the load at the time current appears in the load, and high-density plasmas appear there later in time. There are two important differences between the density evolution of POS's utilizing flashboard and cable-gun plasma sources. 1) There is a substantial (two-three times) increase in the electron inventory during conduction using cable guns that is not detected using flashboards. This is attributed, primarily, to ionization of ions and neutrals for the cable-gun case. 2) The conduction scaling with plasma density implies that the cable-gun POS has an effective ion mass/charge ratio about double that for the flashboard POS     

Bistable optically controlled semiconductor switches in afrequency-agile RF source

The processes of persistent photoconductivity followed by photoquenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a photoconductive switch to be developed that can be closed by the application of one laser pulse (λ=1.06 μm) and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser (λ=2.13 μm). This switch is called the bistable optically controlled semiconductor switch (BOSS). The opening phase of the BOSS requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (~1 MeV). Neutron-irradiated BOSS devices have been opened against a rising average electric field of about 36 kV/cm (18 kV) in a time less than 1 ns while operating at a repetition rate, within a two-pulse burst, of about 1 GHz. The ability to modify the frequency content of the electrical pulses, by varying the time separation, is demonstrated. Results demonstrating the operation of two BOSS devices imbedded in a frequency-agile RF source configuration are also discussed     

水中针-板结构小能量脉冲火花放电特性北大核心CSCD

开展了J量级系统储能下电脉冲参数对水中火花放电特性影响研究。驱动源采用参数可调的固态重频纳秒脉冲电源,放电负载为水中针-板结构(间距1 mm),在低重频条件(约5 Hz)下进行实验。通过调节放电参数、拍摄高速阴影图像、光谱诊断以及声信号测量,研究水中脉冲放电的物理特性,得到不同放电参数下放电演化规律及其对声学、光谱特性影响。实验发现:在J量级储能下,放电通道连通两极后,回路电流在几百ns内快速上升至10 A左右,随后缓慢下降,持续50~60μs。发现预设脉宽对放电影响较大,短脉宽条件下放电会被电源固态开关强制截断出现反向放电,而长脉宽条件下放电通道在后期变得不稳定甚至熄弧中断,出现气泡中二次放电现象。辐射光谱揭示了更多等离子体信息,推断通道电子密度在1018 cm-3量级,随着脉宽增加,特征谱线强度增加,表明活性粒子数密度增加,但粒子种类不变。短脉冲(<150μs)作用下产生的脉冲声波的特征宽度在110~150μs,而当脉宽继续增大,声波脉宽并不继续增加而是保持不变,保持在150μs左右。研究结果对水中小能量火花放电的机理研究有一定参考价值,为水声学、液相等离子体等领域的应用提供思路。     

Generation of a submillisecond electron beam with a high-density current in a plasma-emitter diode under the conditions of open plasma boundary emission

The generation of a 250-μs-wide electron beam in a plasma-emitter diode is studied experimentally. A plasma was produced by a pulsed arc discharge in hydrogen. The electron beam is extracted from a circular emission hole 3.8 mm in diameter under open plasma boundary conditions. The beam accelerated in the diode gap enters into a drift space in the absence of an external magnetic field through a hole 4.1 mm in diameter made in the anode. The influence of electron current deposition at the edge of the anode hole on the beam’s maximum attainable current, above which the diode gap breaks down, is studied for different accelerating voltages and diode gaps. The role of processes occurring on the surface of the electrodes is shown. For an accelerating voltage of 32 kV, a mean emission current density of 130 A/cm² is achieved. The respective mean strength of the electric field in the acceleration gap is 140 kV/cm. Using the POISSON-2 software package, the numerical simulation of the diode performance is carried out and the shape of steady plasma emission boundaries in the cathode and anode holes is calculated. The influence of the density of the ion current from the anode plasma surface on the maximum attainable current of the electron beam is demonstrated.     

Compact pulsed power generator using an inductive energy storagesystem with two-staged opening switches

The pulsed power generator, named ASO-I, is extremely compact and light in comparison with a conventional pulsed power generator, which consists of a Marx bank and a water pulse forming line. The ASO-I has a two-staged opening switch, consisting of fuses in water and a plasma erosion opening switch, and can be operated hundreds of times a day at an output power of 230 kV and 35 kA. The parallel fuses are effective for power multiplication, and small differences in length of the parallel fuses do not influence the output power. The risetime of current through the short-circuit load decreases with the increase of the gap length of the spark gap, which is placed between the fuses and the load. The plasma erosion opening switch can be operated as a second opening switch, and the risetime of the current through the short-circuit load decreases from 250 to 10 ns. The maximum resistance of the plasma erosion opening switch is 3.5 Ω with an open-circuit load     

低密度等离子体融断开关的粒子模拟研究

 采用2.5维柱坐标粒子模拟程序研究了低密度等离子体融断开关（PEOS）工作过程中的物理现象,介绍了计算模型的建立和复杂边界的算法处理。模拟结果表明,在PEOS导通电流的过程中,电流通道最初在等离子体的发生器端形成,并且随着导通时间的增大而向负载端漂移。离子的空间分布并没有明显的变化,当PEOS发生断路时,等离子体离子的密度会迅速降低,并最终导致PEOS阴极附近的等离子体的密度已接近为零,此时,阴极电子完全受磁场箍缩作用而不能到达阳极,PEOS完全断开。