Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates

Conventional electron-beam lithographic patterning of GaAs substrates followed by reactive-ion etching of small holes has been successfully used to control the nucleation of InAs dots. We have observed >50% single dot occupancy for holes wide and deep and show that the dot occupancy and dot size can be varied by changing the size of the holes. Luminescence from an array of these site-controlled dots has been demonstrated. Thus this use of substrate patterning is a viable technique to controllably place single dots at pre-determined positions in devices.     

Characterization of GaN layers grown on silicon-on-insulator substrates

In this study, we report growth and characterization of GaN layers on (1 0 0)- and (1 1 1)-oriented silicon-on-insulator (SOI) substrates. Using metalorganic chemical vapor deposition (MOCVD) technique, GaN layers are grown on KOH treated Si (1 0 0) overlayers of thin SIMOX SOI substrates. Growth of GaN on such surface with an AlN buffer leads to c-axis orientated textured GaN. This is evident from high-resolution X-ray diffraction (HRXRD) measurement, which shows a much broader rocking curve linewidth. Significantly enhanced photoluminescence (PL) intensity and partial stress relaxation is observed in GaN layers grown on these SOI substrates. Furthermore, GaN grown on (1 1 1)-oriented bonded SOI substrates shows good surface morphology and improved optical quality. Micro-Raman, micro-PL, and HRXRD measurements reveal single crystalline hexagonal GaN oriented along (0 0 0 1) direction. We also report growth and characterization of InGaN/GaN multi-quantum well structures on (1 1 1)-oriented bonded SOI. Such an approach to realize nitride epilayers would be useful to fabricate GaN-based micro-opto-electromechanical systems (MOEMS) and sensors.     

Integrity of functional self-assembled monolayers on hydrogen-terminated silicon-on-insulator wafers

Silicon-on-insulator (SOI) wafers are commonly used to design microelectronics, energy conversion, and sensing devices. Thin solid films on the surfaces of SOI wafers have been a subject of numerous studies. However, SOI wafers modified by self-assembled monolayers (SAMs) that can also be used as functional device platforms have been investigated to a much lesser extent. In the present work, tert-butoxycarbonyl (t-boc, (CH₃)₃-C-O-C(O)-)-protected 1-amino-10-undecene monolayers were covalently attached to a H-terminated SOI (1 0 0) surface. The modified wafers were characterized by X-ray photoelectron spectroscopy to confirm the stability of the SAM/Si interface and the integrity of the secondary amine in the SAM. The transmission electron microscopy investigation suggested that this t-boc-protected 1-amino-10-undecene SAM produces atomically flat interface with the 2 μm single crystalline silicon of the SOI wafer, that the SiO_x and both available Si/SiO_x interfaces are preserved, and that the organic monolayers are stable, with apparent thickness of 1.7 nm, which is consistent with the result of the density functional theory modeling of the molecular features within a SAM.     

Design and fabrication of compact 3-dB coupler in silicon-on-insulator

A novel compact 3-dB coupler is proposed and fabricated in silicon-on-insulator. The new coupler provides large output waveguide spacing of 125.0 μm with short device length of 867.0 μm and large cross-section of 6.0 × 4.0 μm. The device length can be remained essentially unchanged even when the output spacing is further enlarged to realize the complex applications in photonic integrated circuits. The fabricated device exhibits excess loss of 6.3 dB and low imbalance of 0.26 dB.     

Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

We have deposited a 12 nm thick Ge layer on Si(1 0 0) held at 200 °C by thermal evaporation under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self-assembled growth of nanostructural Ge islands on the Ge layer occurred. Atomic force microscopy (AFM) and grazing incidence small-angle X-ray scattering (GISAXS) were used to characterize such layers. GISAXS measurements evidenced the formation of cylinder shaped structures upon annealing at 700 °C, which was confirmed by AFM measurements with a very sharp tip. A Ge mass transport from the layer to the islands was inferred by X-ray reflectivity and an activation energy of 0.40 ± 0.10 eV for such a process was calculated.     

Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 μm. In this particular study, the dots were grown at 450 °C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 μm while the best spacer thickness was found to be 200 nm.     

Experimental investigation on submicron rib waveguide microring/racetrack resonators in silicon-on-insulator

In experiment, characteristics of silicon microring/racetrack resonators in submicron rib waveguides have been systematically investigated. It is demonstrated that only a transverse-electric mode is guided for a ratio of slab height to rib height h/H = 0.5. Thus, these microring/racetrack resonators can only function for quasi-transverse-electric mode, while they get rid of transverse-magnetic polarization. Electron beam lithography and inductively coupled plasma etching were employed and improved to reduce sidewall roughness for low propagation loss and high performance resonators. Then, the effects of waveguide dimensions, coupling region design, waveguide roughness, and oxide cladding for the resonators have been considered and analyzed.     

Kinetic effects in the self-assembly of pure and mixed tetradecyl and octadecylamine molecules on mica

The self-assembly of tetradecylamine (C14) and of mixtures of tetradecyl and octadecylamine (C18) molecules from chloroform solutions on mica has been studied using atomic force microscopy (AFM). For pure components self-assembly proceeds more slowly for C14 than for C18. In both cases after equilibrium is reached islands of tilted molecules cover a similar fraction of the surface. Images of films formed by mixtures of molecules acquired before equilibrium is reached (short ripening time at room temperature) show only islands with the height corresponding to C18 with many pores. After a long ripening time, when equilibrium is reached, islands of segregated pure components are formed.     

High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applications

Direct wafer bonding between high-density-plasma chemical vapour deposited (HDP-CVD) oxide and thermal oxide (TO) has been investigated. HDP-CVD oxides, about 230 nm in thickness, were deposited on Si(0 0 1) control wafers and the wafers of interest that contain a thin strained silicon (sSi) layer on a so-called virtual substrate that is composed of relaxed SiGe (∼4 μm thick) on Si(0 0 1) wafers. The surfaces of the as-deposited HDP-CVD oxides on the Si control wafers were smooth with a root-mean-square (RMS) roughness of <1 nm, which is sufficiently smooth for direct wafer bonding. The surfaces of the sSi/SiGe/Si(0 0 1) substrates show an RMS roughness of >2 nm. After HDP-CVD oxide deposition on the sSi/SiGe/Si substrates, the RMS roughness of the oxide surfaces was also found to be the same, i.e., >2 nm. To use these wafers for direct bonding the RMS roughness had to be reduced below 1 nm, which was carried out using a chemo-mechanical polishing (CMP) step. After bonding the HDP-CVD oxides to thermally oxidized handle wafers, the bonded interfaces were mostly bubble- and void-free for the silicon control and the sSi/SiGe/Si(0 0 1) wafers. The bonded wafer pairs were then annealed at higher temperatures up to 800 °C and the bonded interfaces were still found to be almost bubble- and void-free. Thus, HDP-CVD oxide is quite suitable for direct wafer bonding and layer transfer of ultrathin sSi layers on oxidized Si wafers for the fabrication of novel sSOI substrates.     

Highly-sensitive silicon-on-insulator sensor based on two cascaded micro-ring resonators with vernier effect

A highly-sensitive integrated optical biosensor based on two cascaded micro-rings resonator (MRR) is investigated theoretically and experimentally. The free spectral ranges (FSRs) of two cascaded micro-rings are designed to be slightly different in order to generate Vernier effect. A preliminary investigation of our sensor with a Q factor of 2 × 10⁴ using different ethanol concentrations shows that the Vernier effect can improve the sensitivity to 1300 nm per refractive index unit (RIU), compared to 62 nm/RIU for a single ring sensor. The sensor also has a large measurement range of refractive index change up to 1.15 × 10^− 2 RIU. It can be useful for low-cost and highly-sensitive optical biosensor system.     

Force spectroscopy in noncontact mode

We have analyzed the possibility of using noncontact scanning force microscopy (NCAFM) to detect variations in surface composition, i.e., to detect a ‘spectroscopic image' of the sample. This ability stems from the fact that the long-range forces, acting between the AFM tip and sample, depend on the composition of the AFM tip and sample. The long-range force can be magnetic, electrostatic, or van der Waals forces. Detection of the first two forces is presently used in scanning force microscopy technique, but van der Waals forces have not been used. We demonstrate that the recovery of spectroscopic image has a unique solution. Furthermore, the spectroscopic resolution can be as good as lateral one.     

Pseudo-non-contact AFM imaging?

Recent non-contact atomic force microscopy studies have demonstrated that imaging of single atom defects is possible. However, the imaging mechanism was unclear. Long-range forces of attraction, which are normally associated with non-contact mode, are not known to produce sufficient lateral resolution to image atoms. In this study, we suggest a mechanism that could be responsible for the resolution achieved. We use realistic interatomic interaction parameters to do numerical simulations. These simulations are in good agreement with experimental data. As a result, we are able to ‘separate' the attractive and repulsive forces acting between the AFM tip and the sample surface. Calculations indicate that the force responsible for image contrast in the experimental studies mentioned above, is in most cases the repulsive contact force, and not the long-range attractive force. We check our conclusions against a variety of interatomic interaction parameters and our results remain valid for any reasonable set of such parameters, including the power law of the attractive potential N<9.     

Effect of akermanite morphology on precipitation of bone-like apatite

Bioactivity in vivo of ceramic materials has been related to their surface micro-topography and may be estimated by means of simulated body fluid method in vitro. In order to investigate the effect of surface topographies of akermanite ceramics on bioactivity in vitro, akermanite ceramics were synthesized by sol-gel method and different surface topographies of disc-shaped akermanite ceramics were prepared by polishing with different SiC sandpapers. Atomic force microscopy (AFM) was used to evaluate the surface morphology and roughness. The bioactivity in vitro of ceramics with different surface states was evaluated by soaking the ceramics in simulated body fluid (SBF). And the samples after being soaked were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersive spectrometry (EDS). The results showed that the amounts of precipitated apatite on the ceramics with different surface roughness after being soaked in SBF were different and the bioactivity in vitro of ceramic with rough surface was significantly higher than that of ceramic with smooth surface. The study suggested that suitable surface roughness may improve the bioactivity in vitro of akermanite ceramics.     

Effect of nitrogen doping on nanomechanical and surface properties of silicon film

The effect of nitrogen ion implantation on the nanomechanical properties of single crystal Si was evaluated by means of a conventional Vickers indentation and nanoindentation tests. The images of Si surfaces before and after nitrogen implantation were observed and their average surface roughnesses were measured by an atomic force microscope (AFM), while the changes in the morphology and microstructure of the single crystal Si by N implantation were examined by field emission scanning electron microscope (SEM) and X-ray diffractometer (XRD). In addition, the hydrophilic/hydrophobic surface property of the N-doping Si film was determined from the measurement of water contact angle by the sessile drop technique. Furthermore, the effects of the doping energy on the surface contact angle and the surface roughness and the Vickers hardness of the film are also investigated.     

Quantitative measurement of tip-sample forces by dynamic force spectroscopy in ambient conditions

We introduce a dynamic force spectroscopy technique enabling the quantitative measurement of conservative and dissipative tip-sample forces in ambient conditions. In difference to the commonly detected force-vs-distance curves dynamic force microscopy allows to measure the full range of tip-sample forces without hysteresis effects caused by a jump-to-contact. The approach is based on the specific behavior of a self-driven cantilever (frequency-modulation technique). Experimental applications on different samples (Fischer-sample, silicon wafer) are presented.     

Design, analysis and optimization of silicon-on-insulator photonic crystal dual band wavelength demultiplexer

A highly efficient photonic crystal dual band wavelength demultiplexer (DBWD) using silicon-on-insulator (SOI) substrates is proposed for demultiplexing two optical communication wavelengths, 1.31 μm and 1.55 μm. Demultiplexing of two wavelength channels is obtained by modifying the propagation properties of guided modes in two arms of Y type photonic crystal structure. Propagation characteristics of proposed DBWD are analyzed utilizing 3D finite difference time domain (FDTD) method. Enhancement in spectral response is further obtained by optimizing the Y junction of demultiplexer giving rise to high transmission and extinction ratio for the wavelengths, 1.31 μm and 1.55 μm. Hence it validates the efficiency of proposed optimized DBWD design for separating two optical communication wavelengths, 1.31 μm and 1.55 μm. Tolerance analysis was also performed to check the effect of variation of air hole radius, etch depth and refractive index on the transmission characteristics of the proposed design of SOI based photonic crystal DBWD.     

Pre- and post-breakdown electrical studies in ultrathin Al2O3 films by conductive atomic force microscopy

The loss of local dielectric integrity in ultrathin Al₂O₃ films grown by atomic layer deposition is investigated using conducting atomic force microscopy. I–V spectra acquired at different regions of the samples by constant and ramping voltage stress are analyzed for their pre- and post-breakdown signatures. Based on these observations, the thickness dependent dielectric reliability and failure mechanism are discussed. Our results show that remarkable enhancement in breakdown electric field as high as 130 MV/cm is observed for ultrathin films of thickness less than 1 nm.     

Lateral force microscopy in low normal force limit

We have studied frictional force between SiN tip and Si surface by using lateral force microscopy. The cantilever we have used has very low stiffness of 0.006 N/m, and the normal force acting on the surface was much lower than the attractive force such as van der Waals force. In this low normal force limit, it was found that the frictional force did not depend on the normal force. We suggest a calibration method to estimate the attractive force from the lateral force data in this limit. The estimated attractive force between Si sample and SiN tip with radius of 10 nm was 0.4 nN in flat region and 0.65 nN at the corner of a rectangular hole.     

Improvement of optical sensing performances of a double-slot-waveguide-based ring resonator sensor on silicon-on-insulator platform

We demonstrate a label-free photonic biosensor with double slots based on micro-ring resonator. The footprint is less than 25 μm × 15 μm. Finite-difference time-domain (FDTD) method is used to analyze the influence of several key parameters on the performance of the double-slots micro-ring resonators. An asymmetric structure is considered for the ring waveguide in order to improve the sensor's bending efficiency. Our numerical analysis shows that the sensitivity of double-slot micro-ring resonator sensor with the radius of 5 μm reaches a value of 708 nm/RIU. The quality factor of 580 and the free spectral range (FSR) of 33 nm are achieved.