纤锌矿GaN柱形量子点中类氢施主杂质态

在有效质量近似和变分原理的基础上,选取含两个变分参数的波函数,研究了纤锌矿结构的GaN/AlxGa1-xN单量子点中类氢施主杂质体系的结合能随量子点(QD)尺寸以及杂质在量子点中位置的变化,并与以前使用不同尝试波函数的计算结果进行了比较。结果表明:由我们选取的两变分参数波函数得到的结果与前人选取的两变分参数波函数得到的结果相比有所改进,而与选取一个变分参数波函数得到的结果一致。同时我们还计算了体系的维里定理值随量子点半径的变化情况,所得结果与前人工作结果一致,说明本文选取的两变分参数波函数能很好地描述柱形量子点中施主杂质态的运动。     

柱形量子点中弱耦合磁极化子的性质

应用线性组合算符方法和幺正变换方法,研究在抛物势作用下的柱形量子点中磁极化子的性质。对ZnS量子点的数值计算表明,量子点中磁极化子的基态能量随特征频率、回旋共振频率的增大而增加,这是由于特征频率增加时振动能量、回旋共振频率增加时外磁场中的附加能量增加所致。当特征频率(或回旋共振频率)增加到某一值时,磁极化子能量由负变为正。基态能量随柱高的减小而增加,且柱高越小,增加越快;当柱高减小到某一值时,磁极化子能量也由负变为正。总之,柱形量子点中的磁极化子,其基态能量与量子点的尺度、外磁场、特征频率等有关。     

Photoionization cross section of a donor impurity in a two-dimensional anisotropic quantum dot

A system of an electron with a hydrogenic impurity confined in a two-dimensional anisotropic quantum dot has been investigated. We report a calculation for the binding energy of a donor impurity. The important feature of a donor impurity in a two-dimensional anisotropic quantum dot is obtained via an analysis of the binding energy. The photoionization cross section associated with intersubband transitions has been calculated. The results are presented as a function of the incident photon energy. The results show that the photoionization cross section of a donor impurity in a two-dimensional anisotropic quantum dot is strongly affected by the degree of anisotropy and the size of the quantum dot.     

Phase behavior of symmetric ternary block copolymer-homopolymer blends in thin films and on chemically patterned surfaces

The phase diagram of symmetric ternary blends of diblock copolymers and homopolymers in thin films was determined as a function of increasing volume fraction of homopolymer (phi(H)) and was similar to that for these materials in the bulk. Blends with compositions in the lamellar region of the diagram (phi(H)< or =0.4) could be directed to assemble into ordered lamellar arrays on chemically striped surfaces if the characteristic blend dimension (L(B)) and the period of the stripes (L(S)) were commensurate such that L(S)=L(B)+/-0.10L(B). Blends with compositions in the microemulsion region of the diagram (phi(H) approximately 0.6) assembled into defect-free lamellar phases on patterned surfaces with L(S)> or =L(B), but formed coexisting lamellar (with period L(S)) and homopolymer-rich phases when L(S)相似文献   

Linear and Nonlinear Optical Absorptions of a Donor Impurity in Spherical Quantum Dots

An investigation of the optical properties of a hydrogenic donor in sphericalparabolic quantum dots has been performed by using the matrix diagonalization method. The optical absorption coefficient between the ground (L=0) and the first excited state (L=1) have been examined based on the computed energies and wave functions. The results are presented as a function of the incident photon energy for the different values of the confinement strength. These results show the effects of the quantum size and the impurity on the optical absorption coefficient of a donor impurity quantum dot.     

Barrier Li Quantum Dots in Magnetic Fields

The methods for the few-body system are introduced to investigate the states of the barrier Li quantum dots (QDs) in an arbitrary strength of magnetic field. The configuration, which consists of a positive ion located on the z-axis at a distaneed from the two-dimensional QD plane (the x-y plane) and three electrons in the dot plane bound by the positive ion, is called a barrier Li center. The system, which consists of three electrons in the dot plane bound by the ion,is called a barrier Li QD. The dependence of energy of the state of the barrier Li QD on an external magnetic field B and the distance d is obtained. The angular momentum L of the ground states is found to jump not only with the variation orB but also with d.     

Shallow Donor Impurity Ground State in a GaAs/AlAs Spherical Quantum Dot within an Electric Field

Using the configuration-integration methods {(CI)} [Phys. Rev.B 45 (1992) 19], we report the results of the Hydrogenic-impurity ground state in a GaAs/AlAs spherical quantum dot under an electric field. We discuss the variations of the binding energies of the Hydrogenic-impurity groundstate as a function of the position of impurity D, the radius R of the quantum dot, and also as a function of electric field F. We find that the ground energy and binding energy of impurity placed anywhere depend strongly on the position of impurity. Also, electric field can largely change theHydrogenic-impurity ground state only limiting to the big radius of quantum dot. And the differences in energy level and binding energyare observed from the center donor and off-center donor.     

Electronic Structure of Helium Atom in a Quantum Dot

Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method.To be specific,precise energy eigenvalues of bound 1sns(~1S~e)(n=1-6)states and the resonance parameters i.e.positions and widths of~lS~e states due to 2sns(n=2-5)and 2pnp(n=2-5)configurations of confined helium below N=2 ionization threshold of He~+have been estimated.The two-parameter(Depth and Width)finite oscillator potential is used to represent the confining potential due to the quantum dot.It has been explicitly demonstrated that the electronic structural properties become sensitive functions of the dot size.It is observed from the calculations of ionization potential that the stability of an impurity ion within a quantum dot may be manipulated by varying the confinement parameters.A possibility of controlling the autoionization lifetime of doubly excited states of two-electron ions by tuning the width of the quantum cavity is also discussed here.     

The Modes of Internal Motion and Classification of a Three-Electron State in Quantum Dots

The physics underlying the low-lying states of a three-electron system (S = 1/2, L = 0 to 6) confined in a two-dimensional quantum dot by a parabolic potential has been investigated. The modes ofinternal motion in the low-lying states have been identified based on an analysis of the inherent nodal surfaces originating from the quantum mechanical symmetry. Furthermore, a classification for the low-lying states has been proposed.     

Barrier Li Quantum Dots in Magnetic Fields

The methods for the few-body system are introduced to investigate the states of the barrier Li quantumdots (QDs) in an arbitrary strength of magnetic field. The configuration, which consists of a positive ion located on thez-axis at a distance d from the two-dimensional QD plane (the x-y plane) and three electrons in the dot plane boundby the positive ion, is called a barrier Li center. The system, which consists of three electrons in the dot plane bound bythe ion, is called a barrier Li QD. The dependence of energy of the state of the barrier Li QD on an external magneticfield B and the distance d is obtained. The angular momentum L of the ground states is found to jump not only withthe variation of B but also with d.     

Realization of quantum-dot cellular automata using semiconductor quantum dots

We demonstrate that a quantum-dot cellular automata device can be fabricated using electron beam lithographically defined gates on GaAs/AlGaAs heterostructure materials, and that by tuning the four quantum dot (J. Phys. C: Solid State Phys. 21 (1988) L893) system polarization of one double dot can lead to polarization in the neighboring double dot (Phys. Rev. B 67 (2003) 033302). The polarization is detected using a 1-D or 0-D channel defined next to one pair of double dots which acts as a non-invasive voltage probe (Phys. Rev. Lett. 70 (1993) 1311). Ultimately a cellular automata device should be isolated from reservoirs to prevent charge fluctuations caused by co-tunneling. The non-invasive voltage probe is used to show that coupled double dots isolated from reservoirs can be made to have a sharper polarization transition. By studying the broadening of the polarization signal from a coupled double dot system isolated from reservoirs, we deduce the charge dephasing times for intra dot scattering to be more than 0.2 ns (Phys. Rev. B 67 (2003) 073302).     

Rashba spin-orbit interaction effects on thermal and magnetic properties of parabolic GaAs quantum dot in the presence of donor impurity under external electric and magnetic fields

Based on the effective mass approximation, the magnetic and thermal properties of parabolic GaAs quantum dot have been investigated in the presence of Rashba Spin-Orbit interaction (RSOI), donor impurity and applied magnetic and electric fields. The exact diagonalization method has been used to solve the Hamiltonian of an electron confined in a quantum dot (QD) and obtain the eigenenergies and the binding energy of the donor impurity as a function of various QD physical parameters. We have shown the dependence of the average statistical energy, magnetization, magnetic susceptibility and heat capacity of the donor impurity in the QD on: the Rashba interaction parameter, the magnetic and electric fields, confining frequency, and temperature. The results reveal that these parameters can tune the magnetic properties of the GaAs quantum dot and flip the sign of magnetic susceptibility from negative (diamagnetic) to positive (paramagnetic) type material.     

Background charges and quantum effects in quantum dots transport spectroscopy

We extend a simple model of a charge trap coupled to a single-electron box to energy ranges and parameters such that it gives new insights and predictions readily observable in many experimental systems. We show that a single background charge is enough to give lines of differential conductance in the stability diagram of the quantum dot, even within undistorted Coulomb diamonds. It also suppresses the current near degeneracy of the impurity charge, and yields negative differential lines far from this degeneracy. We compare this picture to two other accepted explanations for lines in diamonds, based respectively on the excitation spectrum of a quantum dot and on fluctuations of the density-of-states in the contacts. In order to discriminate between these models, we emphasize the specific features related to environmental charge traps. Finally we show that our model accounts very well for all the anomalous features observed in silicon nanowire quantum dots.     

Quantum entanglement transition in vertically coupled two single-electron quantum dots with charged impurity

Effects of a charged impurity on the ground state of two vertically coupled identical single-electron quantum dots with and without applied magnetic field are investigated. In the absence of the magnetic field, the investigations of the charged impurity effect on the quantum entanglement (QE) in some low-lying states are carried out. It is found that, both the positive charged impurity (PCI) and the negative charged impurity (NCI)reduce the QE in the low-lying states under consideration except that the QE in the ground state is enhanced by the NCI. Additionally, in the domain of B from 0 Tesla to 15 Tesla, the ground state energy E, the ground state angular momentum L and the ground state QE entropy S are worked out. As far as the ground state are concerned, the PCI (NCI) blocks (induces) the angular momentum phase transition and the QE phase transition besides the known fact (i. e., the PCI/NCI decreases/increases the energy) in the magnetic field.     

抛物量子点中强耦合束缚极化子的光学声子平均数

采用线性组合算符和幺正变换方法研究了在库仑场束缚下抛物量子点中强耦合束缚极化子的振动频率和光学声子平均数,并对其进行了数值计算。结果表明:强耦合束缚极化子的振动频率和光学声子平均数随量子点的有效受限长度的增加而减小,随电子-LO声子耦合强度的增强而增加,束缚极化子的振动频率随库仑势的增加而减小。     

States of local moment induced by nonmagnetic impurities in cuprate superconductors

By using a model Hamiltonian with d-wave superconductivity and competing antiferromagnetic (AF) orders, the local staggered magnetization distribution due to nonmagnetic impurities in cuprate superconductors is investigated. We show that the net moment induced by a single impurity corresponds to a local spin with S(z)=0 or 1/2 depending on the strength of the AF interaction U and the impurity scattering strength epsilon. Phase diagram of epsilon versus U for the moment formation is presented. We discuss the connection of this result with the Kondo problem. When two impurities are placed at the nearest neighboring sites, the net moment is always zero, unusually robust to parameter changes. For two neighboring strong impurities, separated by a Cu-ion site, the induced net moment has S(z)=0, 1/2, or 1.     

Exact analytical solutions for shallow impurity states in symmetrical paraboloidal and hemiparaboloidal quantum dots

The problem of a shallow donor impurity located at the centre of a symmetrical paraboloidal quantum dot (SPQD) is solved exactly. The Schrödinger equation is separated in the paraboloidal coordinate system. Three different cases are discussed for the radial-like equations. For a bound donor, the energy is negative and the solutions are described by Whittaker functions. For a non-bound donor, the energy is positive and the solutions become coulomb wave functions. In the last case, the energy is equal to zero and the solutions reduce to Bessel functions. Using the boundary conditions at the dot surfaces, the variations of the donor kinetic and potential energies versus the size of the dot are obtained. The problem of a shallow donor impurity in a Hemiparaboloidal Quantum dot (HPQD) is also studied. It is shown that the wave functions of a HPQD are specific linear combinations of those of a SPQD.     

Substitutional impurity in the graphene quantum dots

The process of formation of the localized defect states due to substitutional impurity in sp²-bonded graphene quantum dot is considered using a simple tight-binding-type calculation. We took into account the interaction of the quantum dot atoms surrounding the substitutional impurity from the second row of elements. To saturate the external dangling sp² orbitals of the carbon additionally 18 hydrogen atoms were introduced. The chemical formula of the quantum dot is H₁₈C₅₁X, where X is the symbol of substitutional atom. The position of the localized levels is determined relative to the host-atoms (C) ε_p energies. We focused on the effect of substitutional doping by the B, N and O on the eigenstate energies and on the total energy change of the graphene dots including for O the effect of lattice distorsion. We conclude that B, N, and O can form stable substitutional defects in graphene quantum dot.     

Two-electron quantum dot molecule: composite particles and the spin phase diagram

We study a two-electron quantum dot molecule in a magnetic field by the direct diagonalization of the Hamiltonian matrix. The ground states of the molecule with the total spin S = 0 and S = 1 provide a possible realization for a qubit of a quantum computer. Switching between the states is best achieved by changing the magnetic field. Based on an analysis of the wave function, we show that the system consists of composite particles formed by an electron and flux quanta attached to it. This picture can also be used to explain the spin phase diagram.     

Transport in a dissipative Luttinger liquid

We study theoretically the transport through a single impurity in a one-channel Luttinger liquid coupled to a dissipative (Ohmic) bath. For nonzero dissipation, the single impurity is always a relevant perturbation which suppresses transport strongly. At zero temperature, the current voltage relation of the link is I approximately exp(-E0/eV), where E0 approximately eta/kappa and kappa denotes the compressibility. At nonzero temperature T, the linear conductance is proportional to exp(-sqrt(CE0/kBT)). The decay of Friedel oscillation saturates for a distance larger than L(eta) approximately 1/eta from the impurity.