共查询到20条相似文献,搜索用时 62 毫秒
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黄光激光作为激光研究领域的一大热点,取得了丰硕的研究成果及广泛的应用。随着可同时作为激光晶体和喇曼晶体的自喇曼晶体的发展,逐渐掀起了自喇曼黄光激光器的研究热潮。总结归纳了近10年来固体自喇曼黄光激光器的研究进展。按激光器的工作方式将其分成连续式和脉冲式激光器,通过分类比较不同工作方式的激光器各自的优缺点,明确了自喇曼黄光激光器今后的研究趋势是多方法并用。结构紧凑、低阈值等特点使其在生物医疗领域拥有巨大的应用潜力。以后的研究重点更偏向于高转换率、高稳定性、低成本及小型化。该研究报告为后续研究方向提供了参考。 相似文献
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We investigate the effect of the number of laser pulses on the formation of p+/n silicon ultra-shallow junctions during non-melt ultra-violet laser (wavelength, 355 nm) annealing. Through surface peak temperature calculating by COMSOL Multiphysics, the non-melt laser thermal annealing is performed under the energy density of 130 mJ/cm2. We demonstrate that increasing the number of laser pulses without additional pre-annealing is an effective annealing method for achieving good electrical properties and shallow junction depth by analyzing sheet resistance and junction depth profiles. The optimal number of laser pulses is eight for achieving a high degree of activation of dopant without further increase of junction depth. We have also explained the improved electrical characteristics of the samples on the basis of fully recovered crystallinity as revealed by Raman spectroscopy. Thus, it is suggested that controlling the number of laser pulses with moderate energy density is a promising laser annealing method without additional pre-annealing. 相似文献
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M. Kawata S. Nadahara J. Shiozawa M. Watanabe T. Katoda 《Journal of Electronic Materials》1990,19(5):407-411
Stress in polycrystalline silicon (poly-Si) was characterized with laser Raman spectroscopy. Effects of diffusion of phosphorus,
annealing and oxidation on stress were especially studied. Relaxation of undirectional stress by annealing and oxidation was
observed. Undirectional stress was relaxed by heavy doping of phosphorus which made a grain size larger. Compressive stress
increased, however, by oxidation in poly-Si with a smaller grain size. 相似文献
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Raman spectra of the transverse-optic phonon mode from a light-emitting layer of a SiC diode have been measured. The phonon
peak broadens and shifts to lower frequency with the rise of temperature when the injected current is increased. The frequency
shift was compared with a result for bulk reference measured separately at various temperatures. We found that the temperature
of the light-emitting layer reached 350°C at a current density of ∼200 A/cm2. 相似文献
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由稳态条件下描述光纤中受激拉曼散射(SRS)效应的光功率耦合方程出发,采用解析方法对多阶级联拉曼光纤激光器(CRFLs)进行了理论分析。根据拉曼光纤激光器级联阶数的奇偶性分别推导出了多阶级联拉曼光纤激光器的输出功率、光-光转换效率最大时的拉曼光纤长度和输出耦合器反射率。通过忽略反射回谐振腔输入端的剩余抽运光功率,计算了5阶级联拉曼光纤激光器的输出特性和光-光转换效率随光纤长度和输出耦合器反射率的变化。利用已有的5阶级联掺锗拉曼光纤激光器输出特性实验数据与理论分析结果进行了对比。 相似文献
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