红外探测用无铅铁电陶瓷的热释电特性研究进展

铁电陶瓷具有优异的热释电性能,是红外探测器的核心敏感元材料,目前普遍采用铅基陶瓷材料,发展无铅铁电陶瓷用于热释电红外探测是近年来电介质物理与材料的一个热点.本文综述了无铅铁电陶瓷的热释电性能研究进展,主要包括钛酸钡基、钛酸铋钠基、铌酸锶钡基、铌酸钾钠基等系列铁电陶瓷的热释电效应研究现状,归纳了不同体系增强热释电效应的手段.通过比较分析主要无铅铁电陶瓷的热释电性能和退极化性能的制约关系,指出钛酸铋钠基陶瓷是目前最具应用潜力的无铅材料体系,并对无铅铁电陶瓷热释电探测应用未来的发展方向进行了展望.     

p型Ba_yFe_xCo_(4-x)Sb_(12)化合物的热电性能

以 2 价的Ba作为填充原子 ,在x=1.0— 1.6 ,y=0— 0 .6 3的组成范围内 ,系统地研究了Ba填充分数及Fe含量对p型BayFexCo4-xSb1 2 化合物电性能及热性能的影响 ,探讨了填充原子的氧化价对电性能的影响规律 ,优化了p型BayFexCo4-xSb1 2 化合物的组成和热电性能 ,对于富Co组成的Ba0 .2 7FeCo3Sb1 2 试样 ,本研究得到了 0 .9最大无量纲热电性能指数 (ZT) .     

热释电效应的几种应用

晶体的32种对称类型中有21种没有对称中心,而在具有压电性的20种无对称中心的点群中,有10种点群的晶体具有热释电效应.这类晶体存在固有的自发极化,当晶体的温度变化时,自发极化强度也随之改变,与极化强度方向垂直的晶体表面产生过剩的热释电电荷.最早观察到热释电现象的矿石是电气石.十九世纪初发现罗息盐(酒石酸钾钠)的热释电性,以后又陆续发现很多晶体具有热释电性能.目前常用的红外探测器材料有硫酸三甘肽(TGS)、钽酸锂、铌酸锶钡以及钛酸铅陶瓷等.实用的热释电材料都是铁电体,它们的极化强度能随外加电场而反转.二十世纪三十年代有人…     

金属离子掺杂对TiO2/白云母纳米复合材料中TiO2的颗粒形态及相组成的影响

采用化学液相沉积法制备了系列未掺杂和掺杂不同金属离子的TiO2白云母纳米复合材料.利用扫描电子显微镜(SEM),x射线衍射(XRD)对其TiO2薄膜的TiO2颗粒形态和相组成进行了详细研究.结果表明,TiO2颗粒在15—50nm之间;除球形颗粒外,掺杂Mn2+,Zn2+的样品中还出现有金红石柱状颗粒.TiO2薄膜中相组成以锐钛矿、金红石共存为特征;掺杂金属离子对TiO2相组成的影响取决于金属离子的离子半径、电荷及配位体特征. 关键词： 金属离子掺杂 TiO2 颗粒形态 相组成     

Ba_2Ca(PO_4)_2:Eu~(2+)蓝色荧光粉的合成及其发光特性

采用高温固相法合成了Ba2Ca(PO4)2:Eu2+蓝色荧光粉,研究了合成温度、合成时间、Ba/Ca比值以及Eu2+掺杂量等对材料的物相及发光特性等的影响.研究结果显示,合成温度为900/1200?C,合成时间为4 h时,可以获得纯相的Ba2Ca(PO4)2;以343 nm紫外线作为激发源时,Ba2Ca(PO4)2:Eu2+呈非对称的宽谱特征,主峰位于454 nm,分析认为,Eu2+在Ba2Ca(PO4)2中占据不同的晶体学格位,形成了不同的发光中心,造成材料呈非对称发射;监测454 nm发射峰,对应的激发光谱覆盖200—450 nm区域,主峰位于343 nm,且在长波紫外段(350—410 nm)有很强的激发带;增大Eu2+掺杂量,Eu2+在Ba2Ca(PO4)2中的发射出现了浓度猝灭现象,且材料的发射峰出现了明显的红移;减小基质中Ba/Ca配比,材料在绿色区域的发射逐渐增强,材料的发光颜色由蓝逐渐变为蓝绿色,分析认为,Eu2+进入Ba2Ca(PO4)2基质体系后,不但取代Ba2+的格位,而且取代Ca2+的格位,形成不同的发光中心,从而影响材料的发光特性.     

Ba2+掺杂对Sr3Al2O6:Eu2+红色荧光粉发光性能的影响

采用高温固相法合成了(Sr1-x-yBax)3Al2O6∶3yEu2+红色荧光材料,通过XRD、荧光光谱和热稳定性测试分析,分别研究了Eu2+、Ba2+掺杂对样品的晶体结构、发光性能和热稳定性的影响。XRD测试结果表明,在1 200℃保温3 h条件下合成了具有立方晶体结构、空间群为Pa3的Sr3Al2O6纯相样品,Eu2+、Ba2+的掺入并没有改变其基质晶格的结构类型。荧光光谱分析表明,Eu2+的摩尔分数为4%时,(Sr0.98-yBa0.02)3Al2O6∶3yEu2+样品的发射峰最强,Ba2+的掺入使样品的发射峰发生红移而发射强度降低,且随Ba2+浓度的增加红移越发明显。此外,Ba2+的掺杂提高了Sr3Al2O6∶Eu2+样品的热稳定性。     

半花菁有序超薄膜热释电效应的产生机理

利用Langmuir-Blodgett技术制备的半花菁有机分子超薄膜中存在电滞回线和热释电效应．通过电荷积分法测量其热释电系数在室温下约为12μC·m^-2·K^-1．利用偏振红外吸收光谱研究了有机超薄膜中半花菁分子取向结构随温度变化的关系．讨论了热释电性产生的微观机理. 关键词：     

YBCO中钙掺杂对CuO_2面空穴浓度的影响

本文通过固相反应法制备了(Y1-xCax)Ba2Cu3O7-δ(x=0,0.06,0.12)多晶样品并在流动氧气下退火,研究了Ca掺杂对超导体CuO2面空穴浓度的影响.热重分析结果显示,相同退火条件下Ca2+/Y3+替代所引入的空穴不会被氧含量的降低所完全补偿.热电势测量数据显示,低温退火就可使未掺杂样品处于"临界掺杂浓度",而低剂量Ca掺杂则有可能降低CuO2面的空穴浓度.观察发现无论是否掺Ca样品的p(δ)函数都呈非线性关系,可能来源于CuO1-δ链的有序性.计算显示Ca2+/Y3+替代可能降低材料的超导性能.     

光学材料 发光材料、荧光材料

O482．31 2005053924 BaFBr:Eu2+中Al3+的最佳掺杂浓度研究=Investigation of optimum of Al3+-doped in BaFBr:Eu2+ by electron paramagnetic resonance[刊,中]／刘永胜(天津理工大学理 学院．天津(300191)),余华∥光电子·激光．-2005,16 (4)．-444-446,453 把Al3+掺入BaFBr:Eu2+中,取代了其中部分Ba2+, 这些金属离子将影响到色心F(Br-),使其激发能变小。 通过电子顺磁共振(EPR)谱研究了掺杂Al3+的量值对光 激励发光强度的影响,确定光激励发光强度最大时的最佳 掺杂比例为0．015％。对这一结果从色心的形成机理上进 行了讨论,指出掺杂量不是越多越好,过多的掺杂Al3+能 导致俘获电子的空位发生聚集,俘获电子的能力变弱,使 光激励发光强度降低。图2表1参5(严寒)     

金属掺杂纳米固体超强酸SO_4~(2-)/ZrO_2的IR考察

首先采用sol gel法制备出ZrO(OH) 2 ,再分别用Ni2 + ,Al3 + ,Sn4+ ,Ag+ ,Sn2 + 金属盐溶液和H2 SO4稀溶液浸渍ZrO(OH) 2 的方法合成了一系列金属离子掺杂的SO2 -4/ZrO2 纳米固体超强酸。并用XRD ,TEM和IR技术考察了各样品的性能。结果发现 ,经不同金属掺杂的SO2 -4/ZrO2 颗粒具有固体超强酸的IR谱特征。经Ni2 + ,Sn4+ 掺杂的样品中Zr—O和 SO 键振动吸收峰明显蓝移 ,Zr—O的νZr—O由SO2 -4/ZrO2 的4 85cm-1增大到Ni2 + ,Sn4+ 掺杂样品的 5 0 0cm-1,SO的νas由 1390cm-1增大到 14 0 5和 14 0 0cm-1,而Sn2 + 掺杂的样品变化不大。说明Ni2 + ,Sn4+ 金属离子的掺杂增强了样品的超强酸性。同时还发现 ,随着样品焙烧温度的提高 ,经Ni2 + 和Al3 + 掺杂的SO2 -4/ZrO2 纳米颗粒 ,Zr—O和 SO 键振动吸收峰明显蓝移 ,而Ag+ 掺杂的样品在焙烧温度达到 10 73K时IR谱只是吸收强度减弱 ,振动频率不变。     

Dielectric and pyroelectric properties of Langmuir-Blodgett film capacitors

Thin-film parallel-plate capacitors have been prepared by means of the Langmuir-Blodgett (LB) technique with mono- and multilayers of 10,12-pentacosadiynoic acid (polymerized) or arachidic acid as the dielectric [Al(Al₂O₃)-LB-Al structures]. Capacitance, dielectric losses and pyroelectric properties were determined as functions of temperature and number of layers. In spite of the organization of identical molecules in alternating orientation, the overall structure of the LB films was non-centrosymmetric. Pyroelectric coefficients of about 10^–6 C m^–2 K^–1 were derived.     

Pb(Zr,Sn,Ti)O3反铁电陶瓷的低温相变扩散与极化弛豫

用弱场介电温谱、热释电流谱、强场电滞回线和变温X射线衍射谱研究了微量La掺杂Pb(Zr,Sn,Ti)O₃(PZST)反铁电(AFEt)陶瓷在-100—180℃温区内的结构与电学特性.弱场介电温谱显示,AFEt陶瓷在低温段(-100—50℃)呈现介电频率弥散(0.1—100kHz)和扩散型相变的特征,而变温X射线衍射谱却表明材料在这一温区内保持四方相结构;低温下经强场作用后,AFEt被诱导为亚稳三方铁电态,介电频率弥散消失.基于多元复杂化合物的组分起伏理论,讨论了PZST AFEt陶瓷 关键词： Pb(Zr Sn 3反铁电陶瓷')" href="#">Ti)O₃反铁电陶瓷 反铁电弛豫 相变 变温X射线衍射     

溶胶-凝胶法制备Pb(Zr1?xTix)O3复合梯度薄摸以及介电与热释电特性

"在Pt/Ti/SiO2/Si基片上用溶胶-凝胶法生长制备了PZT(Pb(Zr1-xTix)O3)复合梯度铁电薄膜． 薄膜最终结构由6层组成,"向上"梯度薄膜在Pt底电极上的第一层从PbZrO3开始,顶层是PZT(50/50),即第一层是PbZrO3,第二层PZT90/10 (10%Ti),第三层是PZT80/20,第四层PZT70/30,第五层PZT60/40,第六层PZT50/50．每一层与此相反的是"向下"梯度PZT薄膜．用X射线衍射、俄歇电子能谱和阻抗分析来研究梯度薄膜的结构与介电特性．600     

Effect of Misfit Strain on Pyroelectric Properties of (111) Oriented Pb(Zr1-xTix)O3 Thin Films

Based on the Landau-Dovenshire theory, the thermodynamic potential of (111) oriented films is constructed to investigate the pyroelectric properties of Pb(Zr_1-xTi_x)O₃ thin films. Due to the presence of nonlinear coupling terms resulted from the (111) epitaxy with substrates, the effects of misfit strain and electric field on the phase transitions at room temperature are more complex than that of (001) and (110) oriented films. Pb(Zr_0.5Ti_0.5)O₃ thin films with the Ti composition around the morphotropic phase boundary (MPB) have the giant dielectric and pyroelectric properties. Moreover, Pb(Zr_1-xTi_x)O₃ thin films grown on the tensile substrates which induce the triclinic γ phase have the larger dielectric and pyroelectric properties than that on the compressive substrates. Therefore, the physical properties of (111) oriented Pb(Zr_1-xTi_x)O₃ thin films can be adjusted by choosing the suitable substrates.     

Structure and Orientation of 1-Hydroxyl-5-Hexadecyloxy-Naphthalene LB Films Studied By UV-VIS and FTIR Spectroscopy

Ultraviolet-visible (UV-Vis), infrared transmission, and reflection absorption(RA) spectra have been measured for one-and multi-monolayer Langmuir-Blodgett(LB) films of C₁₆H₃₃30Naph(1,5)OH at various temperature to investigate dependencies of the aggregation and phase transitions on the number of monolayers. The UV-vis spectra of the LB films have revealed that the C₁₆H₃₃ONaph(1,5)OH forms aggregates in the LB film. From the temperature dependence of UV-vis absorption spectra, it is clear that the aggregate is gradual converted to monomer upto 80 °C. A comparison of the infrared transmission and RA spectra reveals that the hydrocarbon chains are tilted considerably in the LB film. As for the naphthalene ring part, the result suggest that the ring plane is oriented approximately perpendicular to the substrate surface. The Temperature dependence of infrared transmission spectra have been measured for 1-, 3-, and 11-monolayer LB films to investigate dependence of phase transitions on the number of monolayers. These observations show that the one-monolayer LB films does not have a clear order-disorder transition, while the three-and eleven-monolayer films have a phase transition near 60 °C. Therefore, it seems that the title angles of both the alkyl chain and chromophore part change largely concomitantly with the conversion from the aggregate to the monolayer.     

SrTiO3金属-绝缘体-半导体结构的介电与界面特性

采用金属有机分解法在p型Si衬底上制备了SrTiO3（STO）薄膜.研究了STO薄膜金属 绝缘体 半导体(MIS)结构的介电和界面特性.结果表明，STO薄膜显示出优异的介电性能，在10kHz处的介电常数约为105，损耗低于001，这来源于多晶结构和良好的结晶性；MIS结构中的固定电荷密度Nf和界面态密度Dit分别约为15×1012cm-2和(14—35)×1012cm-2eV-1，这主要与Si/STO界面处形成的低介电常数界面层有关. 关键词： SrTiO3薄膜 MIS结构 介电性能 Si/STO界面     

Pulsed laser deposition of perovskite relaxor ferroelectric thin films

Structural, dielectric and ferroelectric properties of thin films of La-doped lead zirconate titanate (PLZT) and sodium bismuth titanate-barium titanate (NBT-BT) perovskite relaxor ferroelectric have been investigated. PLZT films were deposited on Pt/Si substrates in oxygen atmosphere by pulsed laser deposition (PLD) and radio frequency (RF) discharge-assisted PLD, using sintered targets with different La content and Zr/Ti ratio, near or at the boundary relaxor ferroelectric. The films are polycrystalline with perovskite cubic or slightly rhombohedral structure. A slim ferroelectric hysteresis loop, typical for relaxors, has been measured for all film sets. Dielectric characterization shows a large value of capacitance tunability and low dielectric loss. However, common problems related to lead diffusion into the metallic electrode layer do not allow one to obtain high capacitance values, due to the formation of an interface layer with low dielectric constant. Lead-free NBT-BT thin films have been deposited on single crystal (1 0 0)-MgO substrates starting from targets with composition at the morphotropic phase boundary between rhombohedral and tetragonal phase. Films deposited by PLD are polycrystalline perovskite with a slight (1 0 0) orientation. Capacitance measurements were performed using interdigital metallic electrodes deposited on the film's top surface and showed high relative dielectric constant, on the order of 1300.     

酞菁铜LB薄膜复合光波导的高速双稳特性

对以有机材料酞菁铜的LB薄膜作覆盖层的K~+离子交换玻璃光波导,进行了高速光学双稳特性研究.利用比较波导的输入和输出光脉冲形状法,在532nm光波长得到开关时间为24ps的高速光学双稳特性.     

Improved dielectric properties of (Pb,Ca)TiO3 thin films prepared by metal-organic decomposition method

(Pb,Ca)TiO₃ (PCT) thin films have been deposited on Pt/Ti/SiO₂/Si substrate by metal-organic decomposition (MOD) technique. The film processing parameters such as drying and annealing temperatures have been optimized to obtain good-quality PCT films. Compositional analysis of the film has been studied by X-ray photoelectron spectroscopy (XPS). The effect of the annealing temperature on the crystalline structure, microstructure and electrical properties have been investigated by X-ray diffraction, atomic force microscopy (AFM) and impedance analyzer, respectively. Amorphous PCT films form at 350 °C and crystallize in the perovskite phase following the isothermal annealing at ?650 °C for 3 h in oxygen ambient. Typical tetragonal structure of the PCT film is evidenced from X-ray diffraction pattern. The grain size in the PCT films increases with an increase in annealing temperature. Significant improvement in the dielectric constant value is observed as compared to other reported work on PCT films. The observed dielectric constant and dissipation factor at 100 kHz for 650 °C annealed PCT films are 308 and 0.015, respectively. The correlation of the film microstructural features and electrical behaviors is described.     

Epitaxial growth and in-plane dielectric properties of orthorhombic HoMnO3 films

Orthorhombic HoMnO3(HMO) thin films were grown epitaxially on LaAlO3(001) substrates by using pulsed laser deposition technique. The films showed perfect orthorhombic crystallization and were well-aligned with the substrates. The in-plane dielectric constant and loss of HMO films were measured as functions of temperature(80–300 K) and frequency(120 Hz–100 kHz) by using coplanar interdigital electrodes. Two thermally activated dielectric relaxations were found, and the respective peaks shifted to higher temperatures as the measuring frequency increased. The in-plane dielectric properties of epitaxial orthorhombic HMO films were considered as universal dielectric response behavior, and the dipolar effects and the hopping conductivity induced by the charge carriers were used to explain the results.