Influence of DC external magnetic field on AC transport current loss of HTS tape

We measured the AC transport current loss of Bi 2223 multifilament Ag-sheathed tape under DC external magnetic field of 0–0.2 T. There were discrepancies between the measured data and Norris' formula for elliptical model in the range of low value of I_p/I_c (I_p and I_c are peak of the AC transport current and critical current of the tape respectively), while without DC background field, the loss of the tape was close to Norris' formula. Theoretically speaking, even with the DC background field and decreased critical current the AC transport current loss of the tape follows Norris' formula which is derived from the Bean model. When DC background field is applied to the HTS tape, n value of the power law E–J characteristics decreases together with the decrease of J_c. Dependence of the AC transport current loss on the n value was analyzed by numerical calculation. The results show that the loss depends on the n value and that decrease of the n value is one of the causes of the discrepancies between the measured data and Norris' formula.     

Finite element analysis of AC loss in non-twisted Bi-2223 tape carrying AC transport current and/or exposed to DC or AC external magnetic field

AC losses in Bi-2223 superconducting tapes carrying AC transport current and/or exposed to DC or AC magnetic field are calculated with a numerical model based on the finite element method. Superconducting property is given by the E–J characteristic represented by a power law using equivalent conductivity. First, transport loss and magnetization loss are calculated numerically and compared with measured values. The calculated losses almost agree with the measured losses. Frequency dependencies of calculated and measured transport losses are compared with each other. Next, the influence of DC external magnetic field on the transport loss is studied. DC external magnetic field reduces n that is an exponent in the power law connecting resistivity and current density. The numerically calculated transport loss increases with increasing DC magnetic field. Finally, the total loss of superconducting tape carrying AC transport current in AC magnetic field is calculated. In the perpendicular magnetic field, the calculated total loss is lager than the sum of the transport loss and the magnetization loss, while they almost agree with each other in the parallel magnetic field.     

Nonlinear DC conduction behavior in epoxy resin/graphite nanosheets composites

Epoxy resin (ER)/graphite nanosheet (GN) composites with a low percolation threshold (owing to particular geometry of GN with the high aspect ratio) were fabricated. The nonlinear conduction behavior of ER/GN composites above the percolation threshold by the action of variable DC electrical field was investigated. For specimens, the current density or current reduces with decreasing graphite nanosheets concentrations, and the J–E curves are well fitted by a cubic, J=σ₁E+σ₃E³. Moreover, the crossover current density J_c, at which nonlinearity takes place, scales with the linear conductivity σ₁ as with x≈1.390 and the third-order conductivity, σ₃, also scales with J_c as with y≈1.175. Through the discussion of the nonlinearity within the framework of two theoretical models, the nonlinear random resistor network (NLRRN) and the dynamic random resistor network (DRRN), it is indicated that neither of these two models can fully explain our experimental results. Taking into account the microscopic structures and conduction processes of the composites, it is likely that a combination of these two models explain the nonlinear characteristics better.     

Composition and electric field effects on the transport properties of Bi doped chalcogenide glasses thin films

The temperature dependence of the DC electrical conductivity σ_DC was measured in the temperature range from 300–500 K. It was found that there are double activation energies, E_σ, for Ge₂₀Se_80−xBi_x (x=0, 2.5 and 5 at%) films, while there is single activation energy for Ge₂₀Se_72.5Bi_7.5. when incorporation of Bi=7.5 at%, the pre-exponential value σ₀ decreases by about six order of magnitude, the activation energy in the extended states E_σ decreases from 0.96 to 0.09 eV. Also the effect of applied electric field was studied and observed that, activation energy in high temperature region increases with increasing electric field; this behavior can be understood assuming that the contribution to the conductivity activation process is due to conduction in the extended states and also due to hopping in the localized states. With the increasing electric field, as former process, which is having high activation energy, becomes more predominant due to the dumping of the carriers in the extended states, the effective activation energy of the system increases, in spite of the fact that the activation energy of the extended states conduction may remain constant. Finally, the electrical data suggests that the addition of bismuth produces localized states near the conduction band edge so that the electrical transport is due to hopping of electrons after being excited into localized states at the conduction band edge.     

Determination of localized states in porous silicon

We determined the density of state distribution near the Fermi level in porous silicon from the analysis of the current–voltage (J–V) and the current–thickness (J–T) characteristics in the space-charge-limited-current (SCLC) regime. The distribution exhibits a minimum density at the Fermi level, which is similar to the U-shape-trap-distribution observed in crystalline Si–SiO₂ interface or in amorphous Si. Theoretical analysis well explains both the J–V and the J–L characteristics, which implies that the current flow is entirely controlled by localized states situated at the quasi-Fermi level.     

Graduation of electron spectrometer intensity scale. Part 2. How to do it

Graduation function G(E′) absolute values have been determined experimentally for the first time for the intensity scale of an ordinary Auger electron spectrometer. The determination of G(E′) includes creation of an original standard signal and measurement of the consequent reaction of the spectrometer using a “giant rectangular modulation” operation mode, integration of the measurand, and use of an original G(E′) definition. The experimental values of G(E′) are presented in the correct dimensional units for a pass energy range E′ = 150–1000 eV. A non-monotonous behaviour of G(E′), a strong dependence of G(E′) on the multiplier entrance bias voltage, and a discrepancy between the graduation functions of spectrometers of the same type with CMA are demonstrated. Possibilities are predicted for a similar G(E′) determination for other types of spectromer.     

Numerical modelings of superconducting wires for AC loss calculations

Superconducting properties of superconducting wires as well as the influence of their composite structure and twisting should be taken into account for their numerical modeling for AC loss calculations. Furthermore, complicated electromagnetic conditions in electrical apparatuses under which superconducting wires are used influence their AC loss properties; superconducting wires carry their transport current and are exposed to the external magnetic field whose direction and magnitude vary spatially. A series of numerical models of superconducting tapes based on the finite element method has been developed. In each model, some of the above-mentioned factors that could influence the AC loss properties are taken into account. The models are formulated with the current vector potential and the scalar magnetic potential (T–Ω method). Superconducting property is given by the E–J characteristic represented by a power law. The current distributions in non-twisted and twisted superconducting tapes carrying their transport current and/or exposed to the external magnetic field are calculated with these models to estimate their AC loss. The current distribution in a short piece of superconducting tape exposed to AC magnetic field is also calculated.     

Ionic conduction in dilute pseudo-binary systems CuBr–Cu2Se

Ionic conductivity, σ_i, of dilute pseudobinary alloys (CuBr)_1−x(Cu₂Se)_x (x≤0.1) in their γ-phase has been measured by an ac method. The increase of the ionic conductivity propertional to x has been observed, which is attributed to interstitial ions brought by Cu₂Se dissolved in CuBr. It is found that the temperature dependence of mobility of interstitial ions, μ, evaluated by the relation Δσ_i/x=kμ (k is a constant) is bent at the temperature corresponding to the extrinsic–intrinsic transition of the based material CuBr.     

Numerical calculation of current density distributions in high temperature superconducting tapes with finite thickness in self field and external field

The current density distribution of high temperature superconducting (HTS) tapes is modeled for the combined case of an alternating self and applied magnetic field. This numerical analysis is based on the two-dimensional Poisson equation for the vector potential. A one-dimensional current (z-direction) and a one-dimensional applied field (y-direction) are assumed. The vector potential is rewritten into an equation of motion for the current density J(x,y,t). The model covers the finite thickness of the conductor and an n-power E–J relation. The magnetic field dependence of J_c is also included in this E–J relation. A time-dependent two-dimensional current distribution that is influenced by the aspect ratio of the conductor and the material properties in E=f(J,B) is calculated numerically. The numerical results are compared with the experimental results for the AC loss of a tape driven by a transport current. Finally, a total AC loss factor is given for two cases in magnetic field direction, perpendicular and parallel to the conductor broad side.     

Electrical properties of pure and Li2O-doped CuO/Fe2O3 system precalcined at different temperatures

The electrical properties of pure and Li₂O-doped CuO/Fe₂O₃ solids were investigated. Pure and variously doped solids were subjected to thermal treatment at 1073–1273 K and the amount of dopant was varied between 0.84 to 3.36 mol%. The effect of precalcination temperature and amount of Li₂O added on the electrical conductivity σ, activation energy E_a and dielectric constant * were studied. The variation of ′ and ″ as a function of frequency for pure and variously doped solids precalcined at different temperatures was also investigated. The results obtained were discussed.     

Composition and thermal-induced effects on the optical constants of Ge20Se80−xBix thin films

 The effects of composition and thermal annealing near crystallization temperature, T_c on the optical and structural properties of Ge₂₀Se_80−xBi_x (x=0, 2.5, 5 and 7.5 at%) was investigated. The influence of incorporation Bi content in Ge₂₀Se_80−xBi_x system results in a gradual decrease in the indirect optical gap from 1.89 to 1.44 eV, this behavior can be explained as increased tailing. On annealing, the optical band gap E_g decreases gradually for the crystallized films while the refractive index increases, this behavior can be attributed to transformation from amorphous to crystalline and was explained in the light of dangling bond model. The refractive index n of as-prepared and annealed films has been analyzed according to the Wwmple–DiDominico single oscillator model and the values of E_o and E_d were determined. The effect of annealing on the nature and degree of crystallization has been investigated by studying the structure using transmission electron microscope, X-ray diffraction and scanning electron microscope.     

Effect of Li2O doping on electrical properties of CoFe2O4

The solid–solid interactions between cobalt and ferric oxides to produce CoFe₂O₄ were followed up using XRD investigation. The effect of Li₂O-doping on the ferrite formation was also studied. The electrical and dielectric parameters of pure and doped mixed solids precalcined at 1273 K were measured using d.c and a.c instruments.The dopant concentration was varied between 0.5 and 6 mol% Li₂O. The results obtained revealed that Li₂O doping much enhanced the ferrite formation due to an increase in the mobility of the reacting species.

The addition of the smallest amount of Li₂O (0.5 mol%) resulted in measurable variations in the electrical constants (ρ, E_a, ′, ″ and tan δ). Resistivity increased upon increasing the dopant concentration up to 1.5 mol% exceeding the values measured for the undoped sample. Furthermore, the presence of 6 mol% Li₂O brought about a significant decrease of electrical resistivity. Also, the activation energy decreased with increasing the dopant concentration. The dielectric constant behaves according to ε=const. 1/ρ^1/2.

The Li₂O-doping modified the values of different dielectric constants, the change in these constants was found to be strongly dependent on the amount of Li₂O added.These results have been discussed in terms of the potentiality of Li₂O in increasing the mobility of the reacting species involved in the ferrite formation.     

Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch

An experimental study of leakage current is presented in a semi-insulating(SI) Ga As photoconductive semiconductor switch(PCSS) with voltages up to 5.8 kV(average field is 19.3 kV/cm). The leakage current increases nonlinearly with the bias voltage increasing from 1.2×10~(-9)A to 3.6×10~(-5)A. Furthermore, the dark resistance, which is characterized as a function of electric field, does not monotonically decrease with the field but displays several distinct regimes. By eliminating the field-dependent drift velocity, the free-electron density n is extracted from the current, and then the critical field for each region of n(E) characteristic of PCSS is obtained. It must be the electric field that provides the free electron with sufficient energy to activate the carrier in the trapped state via multiple physical mechanisms, such as impurity ionization, fielddependent EL2 capture, and impact ionization of donor centers EL10 and EL2. The critical fields calculated from the activation energy of these physical processes accord well with the experimental results. Moreover, agreement between the fitting curve and experimental data of J(E), further confirms that the dark-state characteristics are related to these field-dependent processes. The effects of voltage on SI-Ga As PCSS may give us an insight into its physical mechanism.     

Influence of the Tl- and Hg-content on magnetic and transport properties of the Pb, Sr-doped Tl-1223 and Hg-1223 superconductors

The effects of the thallium and mercury content x on the as-sintered and post annealed samples of M_xPb_0.4Sr_1.6Ba_0.4Ca₂Cu₃O_8+δ {M: Tl (0.32≤x≤0.74) or Hg (0.18≤x≤0.68)} have been studied by magnetization and transport measurements. For Tl-1223 we have found the optimum Tl doping level to be x=0.53 regarding the grain properties, the content of superconducting phase, the first penetration field H_pl^wl, the transport (J_c^tr), magnetic intergrain (J_c^M) and intragrain (J_c^g) critical current densities. The critical temperature T_c of the as-sintered Tl-1223 sample decreased with increasing Tl content. Post-annealing in oxygen improved the T_c for Tl contents of x≥0.53 and had generally positive effects on the critical current densities. The intergrain properties of the Hg-1223 samples were much worse than those of the Tl-based superconductors.     

On the link between strong and weak coupling expansions for the SU(2) lattice gauge theory

The intermediate region between the strong and weak coupling expansions of SU(2) lattice gauge theory is analyzed by inverting the strong coupling series of the average plaquette energy E_p(J).

Taking into account the weak coupling behaviour too, we get Padé approximants for J(E_p) valid in the whole physical region. The zeros of pJ/pE_p are mapped into singularities of E_p(J); they occur for complex values of J and give rise to a peak in the specific heat in fair agreement with the Monte Carlo simulation data. The variable E_p is further used to analyze the strong coupling expansions for the roughening indicator, the string tension and the mass gap.     

Electrical conductivity, optical and metal–semiconductor contact properties of organic semiconductor based on MEH-PPV/fullerene blend

The electrical conductivity, optical and metal–semiconductor contact properties of the MEH-PPV:C₇₀ organic semiconductor have been investigated. The electrical conductivity results show that the MEH-PPV:C₇₀ film is an organic semiconductor. The optical band gap of the film was found to be 2.06 eV and the fundamental absorption edge in the film is formed by the direct allowed transitions. The refractive index dispersion curve of the film obeys the single oscillator model and E_d and E_o dispersion parameters were found to be 10.61 and 3.89 eV, respectively. The electrical characterization of the ITO/MEH-PPV:C₇₀ diode have been investigated by current–voltage characteristics. ITO/MEH-PPV:C₇₀ diode indicates a non-ideal current–voltage behavior with ideality factor n (2.50) and barrier height φ_B (0.90 eV) values.     

Magnetic hysteresis of the magnetoresistance and the critical current density in polycrystalline YBa2Cu3O7−δ–Ag superconductors

A systematic study of the magnetic hysteresis in transport properties of polycrystalline YBa₂Cu₃O_7−δ–Ag compounds has been made based on two kinds of measurements at 77 K and under applied magnetic fields up to 30 mT: critical current density J_c(B_a) and magnetoresistance R(B_a). The R(B_a) curves show a minimum in their decreasing branch occurring at B=B_min which was found to be both the excitation current I_ex and the maximum applied magnetic field B_am dependent. In addition, for a certain value of B_am>5 mT, we have observed that B_min increases with increasing I_ex and reaches a saturation value. The J_c(B_a) curves show a maximum in decreasing applied magnetic fields occurring at B=B_max. We have also found that B_max increases with increasing B_am and reaches a saturation value. The minimum in the R(B_a) and the maximum in J_c(B_a) curves were found to be related to the trapped flux within the grains. All the experimental results are discussed within the context of the flux dynamics and transport mechanisms in these high-T_c materials.     

虚阴极产生微波的一些基本特性

用Vlasov-Poisson方程对相对论电子束在单板、双板间的传播过程进行了数值模拟,给出了单板模型空间电荷积累最大的位置,不同位置上的电流J、电子数密度n、电场E的振荡频率随入射电子数密度n₀、入射速度v₀的变化关系,双板模型空间电荷积累最大的位置,J、n、E的振荡频率随入射流J₀及两板间距离的变化关系。虚阴极位置的数值结果与稳态理论给出的结果相近,它的振荡频率符合经验公式(1~√2π)ω_peb。单板时入射电子数密度按速度服从高斯分布,能散△E_n/E_n < 10%时的数值结果给出与单能情况基本相同的结论。     

A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current–voltage (I–V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs_0.25P_0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and ΔE_c was estimated as 200–240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K.     

Structure and composition of secondary phase particles in cobalt-doped TiO2 films

The microstructural properties of secondary phase particles formed in epitaxial Co_xTi_1−xO₂ anatase thin films grown on (0 0 1)LaAlO₃ by a reactive RF magnetron co-sputter deposition are examined. These films exhibit ferromagnetic behavior in magnetization measurements, showing a M–H loop at room temperature with a saturation magnetization on the order of 0.7 μ_B /Co. X-ray photoemission spectrometry indicates that the Co cations are in the Co²⁺ valence state. Cross-section electron microscopy reveals that a significant fraction of the cobalt segregates into Co–Ti–O secondary phase particles. Selected area electron diffraction shows that the secondary phase particles are cobalt-rich anatase. While the cobalt is concentrated in the segregated particles, local energy dispersive spectrometry indicates some Co throughout the film.