Hard photon next-to-leading corrections to two-fermion production in e + e − collisions above the Z 0 peak

A complete next-to-leading order calculation of the initial-state O (α) photonic corrections to hadron and lepton-pair production in e ⁺ e ^?. collisions is presented. The impact of the next-to-leading order corrections on the twofermion cross section and forward-backward asymmetry is studied in detail for several event selections, with special emphasis on hard photon effects at LEP1.5 and LEP2 energies. It is shown that for typical realistic event selections, initial-state next-to-leading order corrections in the soft approximation can be safely extrapolated to energies above the Z ⁰ peak without significant loss of precision.     

Influence of relativistic effects on electron-loss cross sections of heavy and superheavy ions colliding with neutral atoms

The influence of relativistic effects, such as relativistic interaction and relativistic wave functions, on the electron-loss cross sections of heavy and superheavy atoms and ions (atomic number Z ? 92) colliding with neutral atoms is investigated using a newly created RICODE-M computer program. It is found that the use of relativistic wave functions changes the electron-loss cross section values by about 20–30% around the cross-section maximum compared to those calculated with nonrelativistic wave functions. At relativistic energies E ≥ 200 MeV/u, the relativistic interaction between colliding particles leads to a quasiconstant behavior of the loss cross sections σ _EL ^rel ～ const, to be compared with the Born asymptotic law σ _EL ^B ～ lnE/E.     

Initial growth process and surface structure of Ag on Si(111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AES

The growth process of silver on a Si(111) substrate has been studied in detail by low-energy ion-scattering spectroscopy (ISS) combined with LEED-AES. Neon ions of 500 eV were used as probe ions of ISS. The ISS experiments have revealed that the growth at room temperature and at high temperature are quite different from each other even in the submonolayer coverage range. The following growth models have been proposed for the respective temperatures. At room temperature, the deposited Ag forms a two-dimensional (2D) island at around 2/3 monolayer (ML) coverage, where the Ag atoms are packed commensurately with the Si(111)1 substrate. One third of the substrate Si surface remains uncovered there. Then it starts to develop into Ag crystal, and at a few ML coverage a 3D island of bulk Ag crystal grows directly on the substrate. An intermediate layer, which covers uniformly the whole surface before the growth of Ag crystal, does not exist. At high temperatures (>~200°C), the well-known Si(111)√3-Ag layer is formed as an intermediate layer, which consists of 2/3 ML of Ag atoms and covers the whole surface uniformly. These Ag atoms are embedded in the first double layer of the Si substrate. It is concluded that the formation of the √3 structure needs relatively high activation energy which may originate from the large displacement of Si atoms owing to the embedment of the Ag atoms, and does not proceed below about 200°C. The most stable state of the Ag atoms on the outermost Si layer is in the shape of an island, both for the Si(111) surface and for the Si(111)√3-Ag surface.     

Photoemission investigation on the oxidation of Si(111)Ag interfaces and its relation to the interface structure

We give the first photoemission results on the enhancement of Si reactivity to oxygen when a noble metal (Ag) is present. The tunability of synchrotron radiation (SR) has been used to get high surface sensitivity and to take advantage of cross section energy dependence. We show that when one monolayer of Ag is deposited onto Si(111), the exposure to oxygen (30 × 10⁶L) originates the overgrowth of an oxide phase which is basically SiO₂. This indicates that Ag breaks the sp³ configuration of Si atoms with a consequent dramatic increase in the Si reactivity. This behaviour rules out the model of Ag adsorbed on top of Si with an atomically abrupt interface.     

First-principles study on structural and electronic properties of AlNSix heterosheet

Under generalized gradient approximation (GGA), the structural and electronic properties of AlN and Si sheets, hydrogen terminated AlN and Si nanoribbons with hexagonal morphology and 2, 4, 6 zigzag chains across the ribbon width and the hexagonally bonded heterosheets AlNSi_x (x=2, 4, and 6) consisting of hexagonal networks of AlN (h-AlN) strips and silicene sheets with zigzag shaped borders have been investigated using the first-principles projector-augmented wave (PAW) formalism within the density function theory (DFT) framework. The AlN sheet is an indirect semiconductor with a band gap of 2.56 eV, while the Si sheet has a metallic character since the lowest unoccupied conduction band (LUCB) and the highest occupied valence band (HOVB) meet at one k point from Γ to Z. In the semiconductor 6-ZAlNNR, for example, the states of LUCB and HOVB at zone boundary Z are edge states whose charges are localized at edge Al and N atoms, respectively. In metallic 6-ZSiNR, a flat edge state is formed at the Fermi level E_F near the zone boundary Z because its charges are localized at edge Si atoms. The hybridizations between the edge states of h-AlN strips and silicene sheets result in the appearance of border states in the zigzag borders of heterosheets AlNSi_x whose charges are localized at two atoms of the borders with either bonding or antibonding π character.     

Fluorine Kα radiation for the excitation of electron spectra

The applicability of the F Kα X-ray line (hv = 676 eV) from potassium fluoride for the excitation of electron spectra is demonstrated. Relative photoionization cross-sections in Au and gaseous Hg have been measured. The F Kα radiation from KF, RbF and CsF has been studied. The Ba Mζ line (hv = 602 eV) is found to be too broad for use in ESCA, even when emitted from metallic barium.     

Growth of nanosize Ag dots with uniform height on?a?Si(111)-7×7-C2H5OH surface, and their electronic properties

C₂H₅OH adsorbs by dissociating on Si-adatom/Si-rest atom pair sites on Si(111)-7×7 surfaces. A half of six Si adatoms and three Si rest atoms are changed to Si-OC₂H₅ and Si-H in every half unit cell at the saturation. When an Ag atom was deposited on this surface, it was stabilized on an intact Si adatom remained in the half unit cell and it did not migrate by hopping. With the increasing number of deposited atoms, uniform height with ca. 5-nm size Ag dots were grown in wide area. A similar growth mode was observed by depositing Ga and Zn on this surface. We deduced that the uniform height growth of 5-nm dots may be given by a layer-by-layer growth of dots in the natural templates composed of six half unit cells. Scanning tunneling spectroscopy indicated that one-monolayer Ag dots had nonmetallic energy gap of ca. 2.2 V at the Fermi level, but the energy gap became narrower with the increasing number of layers and became metallic at eight or nine layers.     

Asymmetry of bremsstrahlung by moderately relativistic polarized electrons

The asymmetry of bremsstrahlung by transversely polarized electrons using Sommerfeld–Maue wave functions has been calculated. In order to simplify the final formula the relativistic approximation has been used. The results obtained show a linear dependence of the asymmetry on the atomic number Z for the range 4≤Z≤26. It is shown that the approach developed gives the zeroth asymmetry for ultrarelativistic energies as expected but for initial electron energies ～5 MeV the asymmetry may achieve a magnitude ～8% (for Z=26). Polarimetry of electrons with energy higher than 1 MeV (where conventional Mott polarimeters have large experimental difficulties) may be carried out using the bremsstrahlung process providing a reasonable asymmetry and high cross section.     

Optical anisotropy of InAs/GaSb broken-gap quantum wells

We investigate in detail the optical anisotropy of absorption of linearly polarized light in InAs/GaSb quantum wells grown on GaSb along the [001] direction, which can be used as an active region of different laser structures. The energy level positions, the wave functions, the optical matrix elements, and the absorption coefficients are calculated using the eight-band k · p model and the Burt-Foreman envelope function theory. In these calculations, the Schr?dinger and Poisson equations are solved self-consistently taking the lattice-mismatched strain into account. We find that a realistic Hamiltonian, which has the C _2v symmetry, results in considerable anisotropy of optical matrix elements for different directions of light polarization and different directions of the initial-state in-plane wave vector, including low-symmetry directions. We trace how the optical matrix elements and absorption are modified when spin-orbit interaction and important symmetry breaking mechanisms are taken into account (structural inversion asymmetry, bulk inversion asymmetry, and interface Hamiltonian). These mechanisms result in an almost 100% anisotropy of the absorption coefficients as the light polarization vector rotates in the plane of the structure and in a plane normal to the interfaces.     

AES and ELS study of gold deposition on top of hydrogen saturated Si(1 1 1) surfaces

Gold was deposited on top of hydrogen saturated Si(1 1 1) clean surfaces. The electronic nature and atomic intermixing between gold overlayer and silicon substrate were studied by AES and ELS. It is claimed that there is a critical thickness (～ 2 ML), where 1 ML = 7.8 × 10¹⁴ atoms cm^?2 for Si(1 1 1), for gold to induce alloyed metallic overlayer formation on the surface of a specimen due to intermixing reaction independently whether a surface of Si(1 1 1) substrate is saturated with hydrogen atoms or not.     

A study of the nucleus 107Ag in the core-excitation model with the (p,t) and (τ, d) reactions

The ¹⁰⁷Ag residual nucleus was studied in the core-excitation model using the (p, t) and (τ, d) reactions. The L, J, π of levels between 0.0 and 2.25 MeV was deduced from the combined reactions. The octupole state observed at 2.19 MeV in other experiments was resolved in (p, t) into a triplet of states at 2.182, 2.203 and 2.229 MeV; octupole strength was observed in (p, t) over a range from 1.144 to 2.229 MeV. Core-excitation wave functions for the quadrupole 2⁺ and 2'⁺ vibration doublets of ¹⁰⁷Ag were constructed using electromagnetic data. These wave functions, combined with data from the ¹⁰⁸Pd(p, t) core reaction, effectively reproduced the ¹⁰⁹Ag(p, t) differential cross sections to these states. The ground-state L = 0 transfer in (p, t) to ¹⁰⁷Ag was only 0.752±0.113 as strong as the corresponding transfer to ¹⁰⁶pd. this is an unexpectedly large blocking effect for an unpaired proton to exert upon a neutron-transfer reaction. An apparent dependence of the (p, t) angular distributions to states of ¹⁰⁷Ag built upon the same core excitation was observed, depending upon the J of the final state.     

Study of Ag/Si(111) submonolayer interface: II. Atomic geometry of Si(111) (√3 × √3 )R30°-Ag surface

Final state diffraction of Ag 3d X-ray photoelectrons from the Si(111) (√3 × √3)R30°-Ag surface has been measured. From a kinematical analysis of the diffraction patterns, it is found that a buried honeycomb framework of Ag atoms is formed on the surface with lateral displacement of the first Si layer.     

Structure of the Ag on Si(111) 7 × 7 interface by means of surface exafs

Polarization dependent surface extended X-ray absorption fine structure (SEXAFS) measurements are used to determine the structure of the Ag on Si(111)7 × 7 system at the early stages (< 3 monolayers (ML)) of interface formation. At room temperature (RT) Ag is found to initially (< 0.5 ML) chemisorb in the threefold hollow site, approximately 0.7 Å above the outermost Si layer with an average Ag-Si distance of 2.48±0.05 Å. Above monolayer coverage the SEXAFS spectrum is dominated by the Ag-Ag distance indicating Ag island formation on the surface. Upon heating (200 ?T? 600°C) a (√3 ×√3)R30° LEED pattern is observed. At the lowest coverage ( < 0.7 ML) this pattern is determined to arise from Ag atoms which are embedded in the threefold hollows, ~ 0.7 Å below the first and above the second Si layer, with a Ag-Si distance of 2.48 ± 0.04 Å. At higher coverage ($\text{\$}\text{?}$1 ML) Ag clusters are found to grow on this interface with the same Ag-Ag distance as in Ag metal. Our results are discussed in the context of previous experimental and theoretical results.     

The interaction of water with SiMo interface. A core and valence photoemission investigation

Core level photoemission with MgKα radiation (hv = 1253.6 eV) and valence photoemission (hv = 21.2 eV) are presented for Si(1 1 1)-Mo interfaces at various Mo coverages (up to 3.2·10¹⁵ at cm⁻²) exposed to 6000 L of H₂O. The metal deposition strongly enhances the oxidation of Si with the complete H₂O dissociation and the formation of a SiO₂-like compound. The results are consistent with an interface growth with the formation of silicide islands.     

Determination of the energy of the σ level for CO adsorbed on Ni(001) using both Auger and direct photoemission

We have measured the energy of the σ shape resonance for a saturated (2 L) coverage of CO on Ni(001) by observation of both the carbon 1s direct emission and the carbon Auger emission. Both measurements were performed on the same sample at the same time with a carefully calibrated monochromator. Although a previous angle-resolved study of the carbon 1s direct emission set the σ resonance at 311 eV, it is clearly seen in both of our measurements near hv = 303 eV, in agreement with previous results using Auger emission. Since shape resonances may be used to determine bond lengths, resolution of this issue has important implications.     

A study of Al/Si(111)-cleaved interface by photoemission,Auger electron yield,and Auger electron spectroscopies

Photoemission, Auger electron yield, and Auger electron spectra are observed for Al/Si(111)-cleaved interfaces. The Al 3p derived state which becomes metallic at monolayer coverage is introduced near the top of the valence band. The Fermi level is stabilized in this metallic state. The present result favors the on-top geometry of Al atoms on a Si(111)-cleaved surface.     

Determination of the factorized atomic part of the X-ray absorption cross section in the near-edge spectrum: Application to the analysis of structural changes in β zeolite with an increase in the aluminum content

A technique for determining the factorized atomic part σ_at(k) of the X-ray absorption cross section in the near-edge range of small photoelectron wave numbers k, based on the selection of this function from the experimental absorption spectrum of the atom in a compound, has been developed. This technique has been tested using the X-ray absorption near-edge structure (XANES) spectra of aluminum and silicon in a number of model compounds with known structure and applied to investigation of changes in the character of the short-range environment of a silicon atom in β zeolite with a variable Si/Al ratio. Use of the function σ_at(k) obtained by the developed technique in the ab initio calculation of the XANES spectra of silicon in a model β zeolite with Si/Al = 100 makes it possible to reduce the effect of the errors of the muffin-tin approximation on the fine structure of the calculated spectrum and substantiate the possibility of comparing relative changes in a certain spectral range with a change in the structure of the short-range environment of silicon in β zeolite with an increase in the aluminum content. On the basis of this approach, the formation of local distortions in the oxygen tetrahedron coordinating an ionized silicon atom with an increase in the aluminum content (decrease in the Si/Al ratio from 100 to 12) has been established.     

Adsorption of Ag and Au atoms on wurtzite ZnO (0001) surface

We perform first-principles calculations to investigate various surface structures in the absorption of Ag and Au atoms on wurtzite ZnO (0001) surface. The results show that both Ag and Au atoms prefer to be absorbed on the H₃ sites (the center of Zn–O ring) of the surface, and the most favorable monolayer (ML) coverage is 1. The calculated electron structure shows that the Ag- and Au-adsorbed ZnO (0001) surfaces exhibit metallic characteristics even the ML coverage of the adatoms is very low. Finally, the work functions of Ag- and Au-adsorbed ZnO (0001) surfaces are calculated and discussed for the first time in the present work.     

Electron and lattice structure of ultra thin Ag films on Si(1 1 1) and Si(0 0 1)

We studied the low temperature (T ? 130 K) growth of Ag on Si(0 0 1) and Si(1 1 1) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated by means of XPS, UPS, LEED, STM and STS. Surprisingly a (√3 × √3)R30° LEED structure for Ag films has been observed after deposition of 2-6 ML Ag onto a Si(1 1 1)(√3 × √3)R30°Ag surface at low temperatures. XPS investigations showed that these films are solid, and UPS measurements indicate that they are metallic. However, after closer STM studies we found that these films consists of sharp Ag islands and (√3 × √3)R30°Ag flat terraces in between. On Si(0 0 1) the low-temperature deposition yields an epitaxial growth of Ag on clean Si(0 0 1)-2 × 1 with a twinned Ag(1 1 1) structure at coverage’s as low as 10 ML. Furthermore the conductivity of few monolayer Ag films on Si(1 0 0) surfaces has been studied as a function of temperature (40-300 K).     

Anomalous electrical transport properties of Ag/Al bilayers grown on Si by molecular beam epitaxy

We have investigated the temperature dependent electrical resistivity, ρ(T), of Ag(100 nm)/Al(10 nm) bilayers grown on Si(111) and quartz substrates using molecular beam epitaxy (MBE). Bilayers grown on Si exhibited an anomalous negative temperature coefficient of resistivity (TCR) in the temperature range of 140-165 K of the ρ(T) plot. However, at temperatures below and above this negative TCR region, ρ(T) exhibited a characteristic positive TCR of metallic alloys. No such resistive anomaly was observed for the bilayers grown on quartz substrates. The observed resistive anomaly could be qualitatively explained by assuming two parallel conduction channels, that is, one at the interface having high Si content and obeying the polaronic behavior at <165 K and another far away from the interface having almost no Si impurity and thus exhibiting pure metallic behavior down to 4 K. In addition, bilayers exhibited a sharp resistive transition at ∼6.5 K, indicating a possibility of a new Ag-Al alloy being a superconducting material.