Surface studies of 2,4-pentanedione on γ-Al2O3/NiAl (1 0 0) and NiAl (1 0 0)

The chemical compound 2,4-pentanedione (Hacac) has been shown to etch the oxidized metal surfaces metals such as copper and nickel, but not their unoxidized surfaces. Here it is shown that on the γ-Al₂O₃/NiAl (1 0 0) surface (oxidized NiAl (1 0 0)) etching of aluminum occurs at 170 K and 750 K. Reflection-absorption infrared spectroscopy (RAIRS) is used to show that Hacac binds to both the clean, metallic and oxidized surfaces, but decomposition and combustion products dominate on the metallic surface and no etching occurs. The binding process that involves a deprotonation reaction of the enol species was identified by redshift in the carbonyl peaks and the appearance of an Al-H peak observed in the IR spectrum. The implication of these results is that there is both an unusual low temperature and high temperature etching of the alumina by bound acac.     

Surface and redox chemistry of Sm0.95Ce0.05Fe1 − xNixO3 − δ perovskites

A new series of perovskite materials with formula Sm_0.95Ce_0.05Fe_1 − xNi_xO_3 − δ (0 ≤ x ≤ 0.10) has been prepared by sol-gel combustion via a citrate precursor route. X-ray diffraction data showed that materials prepared by this method had a single orthorhombic phase belonging to the Pnma (62) space group. The study of powders sintered in air and in reducing atmospheres reveals that these materials do not show phase separation in air (up to 1350 °C) nor under 5% v/v H₂/N₂ (up to 700 °C), but a phase separation of Sm₂O₃ does occur at and above 800 °C under 5% v/v H₂/N₂ without deterioration of the perovskite phase. The surfaces of all the powders (fresh, in-situ reduced and ex-situ reduced) were Sm rich, and multiple oxidation states for Fe were observed. XP analysis of in-situ reduced samples (800 °C and above) shows that metallic Fe forms in all nickel doped materials except x = 0.07. The surface oxygen vacancies and percentages of lattice and adsorbed oxygen for this series of Ni doped materials were determined and the oxygen recapturing ability is explained in terms of the multiple oxidation states of Fe.     

Interaction of H2S with α-Fe2O3(0 0 0 1) surface

The atomic-scale structural changes in an α-Fe₂O₃ (hematite) (0 0 0 1) surface induced by sulfidation and subsequent oxidation processes were studied by X-ray photoemission spectroscopy, LEED, and X-ray standing wave (XSW) measurements. Annealing the α-Fe₂O₃(0 0 0 1) with a H₂S partial pressure of 1 × 10⁻⁷ Torr produced iron sulfides on the surface as the sulfur atoms reacted with the substrate Fe ions. The oxidation state of the substrate Fe changed from 3+ to 2+ as a result of the sulfidation. The XSW measured distance of the sulfur atomic-layer from the unrelaxed substrate oxygen layer was 3.16 Å. The sulfide phase consisted of three surface domains identified by LEED. Formation of the two-dimensional FeS₂ phase with structural parameters consistent with an outermost layer of (1 1 1) pyrite has been proposed. Atomic oxygen exposure oxidized the surface sulfide to a sulfate () and regenerated the α-Fe₂O₃(0 0 0 1) substrate, which was indicated by a (1 × 1) LEED pattern and the re-oxidization of Fe to 3+.     

Catalysis of the hydrogen oxidation reactions by Sr-doped LaMn1 − yCryO3 ± δ oxides

Sr-doped and Sr-free La_1 − xSr_xMn_1 − yCr_yO_3 ± δ (LSMC, x(Sr) = 0-0.2, y(Cr) = 0.4-0.6) perovskite-type oxides were synthesized and evaluated as single phase anodes for use in intermediate temperature solid oxide fuel cell applications. Their thermo-chemical and chemical stabilities were investigated in hydrogen at high temperatures and correlated with their oxygen non-stoichiometry (3 ± δ), determined by permanganate titration. The catalytic activity towards hydrogen oxidation was examined as a function of oxide sintering time, operating temperature, and the Sr and Cr contents, using a Pt mesh current collector. While all of the perovskite oxides studied here showed some irreversible performance degradation with time under both open circuit and anodically polarized conditions, La_0.9Sr_0.1Mn_0.6Cr_0.4O_3.03 (LSMC9164), sintered at 1200 °C for 10 h, was found to be the most catalytically active and also the most stable.     

Spectroscopy of AlO: Combined analysis of the AΠi → XΣ and BΣ → XΣ transitions

A combined analysis of the A²Π_i → X²Σ⁺ and B²Σ⁺ → X²Σ⁺ band systems of AlO, involving 21,500 line assignments, has been performed. The analysis indicates that the previously reported γ values of the B²Σ⁺ state are questionable. The present analysis shows that γ(B²Σ⁺) ≈ 0.014 cm⁻¹, essentially independent of the vibrational level. The positive sign is consistent with second order interaction with the higher-lying C²Π_r and lower-lying A²Π_i states. It also appears that many of the previously reported γ and γ_D values of X²Σ⁺ (v > 0) are doubtful. In fact, γ(X²Σ⁺) is observed to become increasingly negative for v″ > 1, due to second order interaction with the low-lying A²Π_i state. The present results are based on models where the hyperfine structure of the ²Σ⁺ states has been taken into account explicitly. Intensity patterns of the branches of the B²Σ⁺ → X²Σ⁺ system have been shown to be influenced by the case bβ_S coupling in the ground state v = 0,1 levels. This gives rise to intensity differences of around 10 percent in the R₁/R₂ and P₁/P₂ doublet components. The synthesized intensity patterns are fully in accord with the F₁/F₂ assignments of the present work.     

Electrical Properties of Fe-doped Perovskite-like BaNb0.75-xFexNa0.25O3-δ (0.05 < x < 0.5)

In this paper, we report the electrical properties of Fe-doped perovskite-like compounds with a nominal chemical formula of BaNb_0.75-xNa_0.25Fe_xO_3-δ (0.05 < x < 0.5) (BNF). Various solid-state structural and electrical characterization techniques, including powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), alternating current (AC) impedance spectroscopy and direct current (DC) methods were used for characterization. PXRD patterns for BNF members show the formation of perovskite-like structure. The total electrical conductivity values were determined under ambient air and wet air in the temperature up to 700 °C. The Fe concentration was strongly correlated to the conductivity response, with the x = 0.5 member exhibiting the highest conductivity in air. A relationship between the humidity content and conductivity in air was also observed in low Fe concentration BNF members (x = 0.5, 0.15), suggesting the presence of potential proton conduction; while the conductivity of high Fe content samples (x ≥ 0.3) showed little dependence on the humidity. The chemical stability of BNF samples was investigated in boiling H₂O and in flowing 100% CO₂ at elevated temperatures and the results demonstrated that all members were structurally stable under both conditions, except the x = 0.5 member which decomposed into BaCO₃ in the presence of CO₂ at 800 °C.     

Investigations on the thermo-chemical stability and electrical conductivity of K-doped Ba3 − xKxCaNb2O9 − δ (x = 0.5, 0.75, 1, 1.25)

In this paper, we report the synthesis, crystal structure and electrical transport properties of new K-doped Ba₃CaNb₂O₉ (BCN) and investigate their chemical stability in H₂O and pure CO₂ at elevated temperature. The powder X-ray diffraction (PXRD) of Ba_2.5K_0.5CaNb₂O_9 − δ, Ba_2.25K_0.75CaNb₂O_9 − δ, Ba₂KCaNb₂O_9 − δ, and Ba_1.75K_1.25CaNb₂O_9 − δ showed the formation of a single-phase double perovskite (A₃BB^/₂O₉)-like cell with a lattice constant of a ∼ 2a_p (where a_p is a simple perovskite cell of ∼ 4 Å). Perovskite-like structure was found to be retained after treating with CO₂ at 700 °C and also after boiling H₂O for 120 h. The lattice constant of CO₂ and H₂O treated samples was found to be comparable to that of the corresponding as-prepared compound. The total electrical conductivity of all the investigated K-doped BCN increases with increasing K content in BCN in various atmospheres, including air, dry H₂, wet N₂ and wet H₂. The electrical conductivity in dry and wet H₂ atmospheres was found to be higher than that of air in the temperature range of 300-700 °C, while in wet N₂ a slightly lower value was observed. Among the compounds investigated in the present study Ba_1.75K_1.25CaNb₂O_9 − δ showed the highest total electrical conductivity of 1 × 10^− 3 S/cm in dry H₂ at 700 °C with an activation energy of 1.28 eV in the temperature range of 300-700 °C.     

Oxidation mechanism and ferryl domain formation on the α-Fe2O3 (0 0 0 1) surface

Recent experimental evidence calls for a reinterpretation of the oxidized structure in chemically distinct domains of the hematite (0 0 0 1) surface as the ferryl (FeO) termination rather than the bulk terminated O₃-Fe-Fe-R structure. Although this interpretation is consistent with experimental data and ab initio thermodynamics calculations, it raises serious questions about how molecular oxygen can be dissociated on a surface where reactive iron centers are slightly more than 5 Å apart. Here, we propose a novel cooperative bimolecular mechanism that provides a reasonable pathway for the formation of the unusual ferryl surface termination and should be readily reversible, which is important for understanding the function of hematite surfaces as an oxidation catalyst.     

Non-universal dielectric relaxation in SrFeO3 − δ

SrFeO_3 − δ compound is prepared by the thermal decomposition method followed by ball milling. Analysis of Mössbauer spectrum and X-ray diffraction study proves the presence of multi-phase nature, i.e., Sr₈Fe₈O₂₃ and Sr₄Fe₄O₁₁ phases at room temperature. Furthermore, the Mössbauer spectrum at room temperature evidenced the presence of major Fe^3.5+ which is the resultant of equal contributions of Fe⁴⁺ and Fe³⁺. The Nyquist plot at all measured temperatures (80–230 K) suggests that the dielectric response is well associated with single relaxation time (exponential parameter, n∼1$n\sim 1$) i.e., the Debye-type. Modulus analysis exhibits the non-universal dielectric behaviour (stretched exponential parameter, β>1$\beta >1$) below 230 K and the Debye-type responds (β∼1$\beta \sim 1$) at and above 230 K. The Debye-type behaviour exhibited by SrFeO_2.81 at around room temperature in its defect state offers a new opening for this material for multifunctional applications.     

Antiferroelectric phase transition in pyrochlore-like (Dy1− xCax)2Ti2O7 − δ (x = 0, 0.1) high temperature conductors

Low-temperature ordering transitions in polycrystalline high temperature conductors (Dy_1 − xCa_x)₂Ti₂O_7 − δ (x = 0, 0.1) prepared using co-precipitation, mechanical activation and solid-state reactions at 1400 or 1600 °C have been studied by impedance spectroscopy at low frequencies and thermal mechanical analysis (TMA). The dielectric permittivity and loss tangent of the ceramics obtained have been measured as a function of temperature at low frequencies (0.5−500 Hz). The results provide evidence for the relaxation of point defects, most likely oxygen vacancies, at 500−600 °C and an antiferroelectric low-temperature phase transition of the second order, associated with re-arrangement process in the oxygen sublattice of pyrochlore structure. The temperature of the antiferroelectric transition is 700 to 800 °C, depending on the synthesis procedure and ceramic composition. Calcium doping of Dy₂Ti₂O₇ leads to the formation of additional oxygen vacancies and, in the case of the samples prepared via co-precipitation, increases the peaks in permittivity due to the relaxation process and ordering transition by three or six times, respectively.     

Flexible broadcasting and multicasting in 4λ × 10 Gb/s AOPR TWDM PON system

In this letter, we propose a new architecture of Time Wavelength Division Multiplexing Passive Optical Network (TWDM PON) system to support dynamic multi wavelength allocation (DMWA) in both upstream and downstream directions using an integrated semiconductor optical amplifier (SOA) and arrayed waveguide grating (AWG) with multi wavelength select continuous wave (CW) pump probe signal module. The significance of this architecture is the flexible routing function with the capability of multicasting and broadcasting between multiple optical line terminal (OLT) PON port with multiple optical distribution network (ODN) link using a new wavelength tuning free (WTF) OLT transmitter module to eliminate wavelength tuning delay in downstream signal utilizing multicasting Cross Gain Modulation (XGM) wavelength conversion. The experimental results show that 4λ × 10-Gb/s TWDM PON system can be used to connect 4096 users with the conventional fixed wavelength OLT transceivers with 36 dB link loss.     

Structural and optical properties of Ga2(1−x)In2xO3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD

Ga_2(1−x)In_2xO₃ thin films with different indium content x [In/(Ga + In) atomic ratio] were prepared on α-Al₂O₃ (0 0 0 1) substrates by the metal organic chemical vapor deposition (MOCVD). The structural and optical properties of the Ga_2(1−x)In_2xO₃ films were investigated in detail. Microstructure analysis revealed that the film deposited with composition x = 0.2 was polycrystalline structure and the sample prepared with x up to 0.8 exhibited single crystalline structure of In₂O₃. The optical band gap of the films varied with increasing Ga content from 3.72 to 4.58 eV. The average transmittance for the films in the visible range was over 90%.     

Current–voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current–voltage (I−V) measurements in the temperature range 140–300 K. The I–V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) (Φ_B) increases with the increasing temperature. The I–V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal–semiconductor interface. The zero-bias barrier height Φ_B vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of Φ_B=0.615 eV and standard deviation σ_s0=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm⁻² K⁻² and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm⁻² K⁻². This may be due to greater inhomogeneities at the interface.     

Phase coexistence between the (√3 × √3)R30° - β and (1 × 1) phases on Pb/Ge(1 1 1)

We have characterized the phase transition between the (1 × 1) and (√3 × √3)R30° - β phases on Pb/Ge(1 1 1) using low energy electron microscopy (LEEM). We show that the transition is first-order and that, in the coexistence region of the two phases, the dominant mechanism for phase separation changes critically with Pb coverage, from nucleation and growth at 1.33 ML (saturation coverage of the β phase) to spontaneous domain switching due to thermal fluctuations of the local Pb density for slightly smaller coverage. As the Pb coverage decreases, the concentration of vacancies in the β phase increases, making additional possible Pb adsorption sites available. The larger resulting local density fluctuation of Pb becomes comparable to the density difference of the two phases, manifesting itself in the observed domain switching.     

Highly thermal stable transparent conducting SnO2:Sb epitaxial films prepared on α-Al2O3 (0 0 0 1) by MOCVD

Antimony-doped tin oxide (SnO₂:Sb) single crystalline films have been prepared on α-Al₂O₃ (0 0 0 1) substrates by metal organic chemical vapor deposition (MOCVD). The antimony doping was varied from 2% to 7% (atomic ratio). Post-deposition annealing of the SnO₂:Sb films was carried out at 700-1100 °C for 30 min in atmosphere ambient. The effect of annealing on the structural, electrical and optical properties of the films was investigated in detail. All the SnO₂:Sb films had good thermal stability under 900 °C, and the 5% Sb-doped SnO₂ film exhibited the best opto-electrical properties. Annealed above 900 °C, the 7% Sb-doped SnO₂ film still kept high thermal stability and showed good electrical and optical properties even at 1100 °C.     

Structural and photoluminescence properties of SnO2:Ga films deposited on α-Al2O3 (0 0 0 1) by MOCVD

Gallium-doped tin oxide (SnO₂:Ga) films have been prepared on α-Al₂O₃ (0 0 0 1) substrates at 500 °C by the pulse mode metalorganic chemical vapor deposition (MOCVD) method. The relative amount of Ga (Ga/(Ga+Sn) atomic ratio) varied from 3% to 15%. Post-deposition annealing of the films was carried out at different temperatures for 1.5 h in ambient atmosphere . The structural, electrical, optical and photoluminescence (PL) properties of the films have been investigated as a function of annealing temperature. All the films have the rutile structure of pure SnO₂ with a strong (2 0 0) preferred orientation. A single ultraviolet (UV) PL peak near 337.83 nm was observed at room temperature for the 3% Ga-doped as-grown film and near 336 nm for the 15%-doped film, which can be ascribed to electron transition from the oxygen vacancy and interstitial Ga³⁺ donor levels to the acceptor level formed by the substitution of Ga³⁺ for the Sn site. After annealing, the luminescence spectra have changed a little bit, which is being discussed in detail.     

The 1-v″ bands progression of the BΣ → XΣ system of CO

The B²Σ⁺ → X²Σ⁺ (0-1, 2, 3, 4 progression) electronic transition of ¹²C¹⁷O⁺ was first observed and analyzed by Szajna and Ke¸pa [Spectrochim. Acta A 65 (2006) 1014-1020]. We have now extended our previous studies. The use of high resolution conventional spectroscopic techniques has allowed first rotational analysis of the 1-2, 1-3, 1-4 and 1-5 bands of the first negative system in the 37,000-43,000 cm⁻¹ spectral region. Approximately 500 transition wavenumbers were measured with an estimated accuracy of 0.005 cm⁻¹. The present data were combined with the previous measurements to yield an improved set of molecular constants for the B²Σ⁺(v′ = 0, 1) and X²Σ⁺(v″ = 1, 2, 3, 4, 5). The v′ = 1 and v″ = 5 vibrational levels were observed for the first time and the main molecular constants are (in cm⁻¹, one standard deviation in parentheses)

B2Σ+		X2Σ+
B1 = 1.710792(20)		B5 = 1.825694(23)
D1 = 7.799(15) × 10−6		D5 = 6.085(21) × 10−6
γ1 = 1.9491(37) × 10−2		γ5 = [8.381] × 10−3

Full-size table

     

Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD

Sn-doped Ga_1.4In_0.6O₃ films have been prepared on α-Al₂O₃ (0 0 0 1) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The Sn-doping was varied from 0% to 7% (atomic ratio). Polycrystalline films with resistivity of 4.9 × 10⁻³Ω cm, carrier concentration of 5.9 × 10¹⁹ cm⁻³ and Hall mobility of 21.4 cm² v⁻¹ s⁻¹ was obtained at 5 at.% of Sn concentration. The average transmittance for the Sn-doped Ga_1.4In_0.6O₃ films in the visible range was over 90%. The bandgap of the films varies from 3.85 to 4.21 eV.     

Rovibrational spectroscopy of the Fermi-interacting ν4 = 1 and ν3 = ν6 = 1 levels of DCF3

The high-resolution infrared spectrum of deuterated fluoroform (DCF₃) was studied in the 700 and 1200 cm⁻¹ regions, with the aim of assigning and analyzing the ν₄ CF₃ asymmetric stretching vibration. The Fermi-type anharmonic coupling between the ν₄ = 1 and ν₃ = ν₆ = 1 rovibrational levels, already mentioned in an early work of Ruoff et al. [Spectrochimica Acta Part A 31A (1975) 1099-1100], was studied here for the first time under high resolution. Assignments in the ν₃ + ν₆/ν₄ band system were confirmed and extended by the identification of the ν₃ + ν₆ − ν₆ and ν₄-ν₆ bands in the 700 cm⁻¹ region, the latter being enhanced near the Fermi crossings of the studied levels. Data from both the hot and difference bands were included in the analysis. The close separation of the studied vibrational levels of about 14.8 cm⁻¹ produces a large variety of resonance crossings which involve levels with . Besides the Fermi () and Coriolis () resonances, they were accounted for by inclusion of additional higher-order ( and ) interaction terms between the vibrational states. The least-squares fit of more that 16,000 vibration-rotation transitions provides a quantitative reproduction of data in all bands.     

The rotational spectra of the υ8 = υ9 = 1 and υ6 = υ7 = 1 interacting vibrational states of nitric acid (HNO3)

The analysis of the rotational spectrum of HNO₃ has been extended to include the υ₈ = υ₉ = 1 state at 1205.7 cm⁻¹ and the υ₆ = υ₇ = 1 state at 1223.4 cm⁻¹. Based on 78-519 GHz data, the assignments in the 8¹9¹ vibrational state have been significantly expanded from the previously reported microwave measurements [T.M. Goyette, F.C. De Lucia, J. Mol. Spectrosc. 139 (1990) 241-243]. A new microwave analysis is also reported for the 6¹7¹ vibrational state. A simultaneous analysis takes into account the localized ΔK_a = ±2 Fermi resonances between the vibrational states, describes the torsional splitting of 3.3 and 1.4 MHz for the 8¹9¹ and 6¹7¹ states respectively, and fits to experimental accuracy over 1500 rotational transition frequencies that extend up to J = 59. Infrared energy levels [A. Perrin, J.-M. Flaud, F. Keller, A. Goldman, R. D. Blatherwick, F. J. Murcray, C. P. Rinsland, J. Mol. Spectrosc. 194 (1999) 113-123] were also included in the analysis and fit to experimental accuracy. Measurement of strongly perturbed transitions in each vibrational state provide a determination of the band origin difference of 17.733184(17) cm⁻¹. The rotational constants agree well with those predicted by vibrational-rotational constants of the fundamental modes. Furthermore, the analysis will provide a very accurate simulation of the infrared spectrum of HNO₃ in the 8.3 μm region.