Analysis of Fabry-Perot interference effects on the modulation properties of liquid crystal displays

In this paper, we present the analysis of Fabry-Perot interferences in a twisted nematic liquid crystal display (LCD), and its influence on the modulation properties of the device. We develop a theoretical analysis based on the Jones matrix formalism and compare the results with the experimental response of a commercial display. The developed theory considers multiple reflections to derive a new Jones matrix for the display, which accounts for both polarization and Fabry-Perot interference effects. The validity of this treatment is limited to normal incidence illumination, but it is much simpler than other 4 × 4 matrix treatments developed for a general oblique incidence. It is shown that the existence of multiple reflections can be added to previously existing simplified models for the display, resulting in a modified Jones matrix with two new parameters: the Fresnel reflection coefficient r and the voltage independent phase Φ. In addition, a calibration procedure is proposed where the calculation of these two new parameters related with the multiple reflections, can be uncoupled from the calculation of the rest of the parameters, related with the modulation properties. We remark the good agreement between the theoretical results and the experimental measurements.     

Planar quarter wave stacks prepared from chalcogenide Ge-Se and polymer polystyrene thin films

Planar quarter wave stacks based on amorphous chalcogenide Ge-Se alternating with polymer polystyrene (PS) thin films are reported as Bragg reflectors for near-infrared region. Chalcogenide films were prepared using a thermal evaporation (TE) while polymer films were deposited using a spin-coating technique. The film thicknesses, d∼165 nm for Ge₂₅Se₇₅ (n=2.35) and d∼250 nm for polymer film (n=1.53), were calculated to center the reflection band round 1550 nm, whose wavelengths are used in telecommunication. Optical properties of prepared multilayer stacks were determined in the range 400-2200 nm using spectral ellipsometry, optical transmission and reflection measurements. Total reflection for normal incidence of unpolarized light was observed from 1530 to 1740 nm for 8 Ge-Se+7 PS thin film stacks prepared on silicon wafer. In addition to total reflection of light with normal incidence, the omnidirectional total reflection of TE-polarized light from 8 Ge-Se+7 PS thin film stacks was observed. Reflection band maxima shifted with varying incident angles, i.e., 1420-1680 nm for 45° deflection from the normal and 1300-1630 nm for 70° deflection from the normal.     

Theoretical analysis of non-polarizing beam splitters with appropriate amplitude and phase

When used at oblique angles of incidence, the reflectance and transmittance of thin films exhibit strong polarization effects, particularly for the films inside a glass cube. However, the polarization effects are undesirable in many applications. Novel non-polarizing beam splitter designs are shown. Non-polarizing beam splitters with unique optical thin films are achieved through the combination of interference and frustrated total internal reflection. The non-polarizing condition expressions based on frustrated total internal reflection are derived, and examples of the non-polarizing beam splitters are also presented with the optimization technique and the results of R_p=(50±0.5)%, R_s=(50±0.5)%, and Δ_r=(0±0.3) in the wavelength range of 400-700 nm are obtained.     

In vitro evaluation of bioactivity of CaO-SiO2-P2O5-Na2O-Fe2O3 glasses

Glasses with compositions 41CaO(52 − x)SiO₂4P₂O₅·xFe₂O₃3Na₂O (2 ≤ x ≤ 10 mol.%) were prepared by melt quenching method. Bioactivity of the different glass compositions was studied in vitro by treating them with simulated body fluid (SBF). The glasses treated for various time periods in SBF were evaluated by examining apatite formation on their surface using grazing incidence X-ray diffraction, Fourier transform infrared reflection spectroscopy, scanning electron microscopy and energy dispersive spectroscopy techniques. Increase in bioactivity with increasing iron oxide content was observed. The results have been used to understand the evolution of the apatite surface layer as a function of immersion time in SBF and glass composition.     

Structural characterization of SiGe nanoclusters formed by rapid thermal annealing

This work presents the structural characterization of nanoclusters formed from a-Si:H/Ge heterostructures processed by rapid thermal annealing (RTA) at 1000 °C for annealing times varying between 30 s and 70 s. The a-Si:H layers were grown on electron cyclotron resonance (ECR) using SiH₄ and Ar precursor gases. The Ge layer was grown in an e-beam evaporation system. The structural characterizations were performed by high-resolution X-ray diffractometer (HRXRD) on grazing incidence X-ray reflection mode (GIXRR) and micro-Raman measurements. The average grain size, Ge concentration (x_Ge) and strain were estimated from Lorentzian GIXRR peak fit. The average grain size varied from 3 nm to 7.5 nm and decreased with annealing time. The x_Ge increase with annealing time and varied from 8% to 19%, approximately. The strain calculated for (1 1 1), (2 2 0) and (3 1 1) peaks at 40 s, 50 s, 60 s and 70 s annealing time suggest the geometrical changes in nanoclusters according to process time.     

A novel terahertz wave reflective polarizer for THz communication

We design terahertz wave reflective polarizer that operates over a wide terahertz wavelength range and is based on a periodic bilayer structure. The structure is characterized by transfer matrix calculations. Results of simulations show that the mirror is highly reflecting for incidence angle θ ≤ 60°and TE as well as TM polarization in the wavelength range between 541.6 μm and 574.2 μm (i.e. frequency band between 522.5GHZ and 533.9 GHZ). As the incidence angle increases this reflection band blueshifts for both TM and TE polarizations.     

Full-field refractive index measurement with simultaneous phase-shift interferometry

Using the phenomenon of total internal reflection and a beam splitting device, a technique of simultaneous phase-shift interferometry is proposed for measuring the full-field refractive index. Because this method applies a beam splitting device that mimics the characteristics of beam splitting and phase modulation, four interferemetric images of various phase distributions can be simultaneously captured. Therefore, this setup can avoid errors caused by non-simultaneous capturing of images and offers the benefits of high stability, ease of operation, and real-time measurement. Furthermore, using the phenomenon of total internal reflection, the phase difference between p- and s-polarized light varies considerably with the refractive index of a tested specimen. This can substantially increase the measurement resolution. The feasibility of this method is verified using an experiment, and the measurement resolution can be higher than 3.65 × 10⁻⁴ RIU.     

Optical and electrical properties of thermally oxidized bismuth thin films

Bismuth trioxide (Bi₂O₃) thin films were prepared by dry thermal oxidation of metallic bismuth films deposited by vacuum evaporation. The oxidation process of Bi films consists of a heating from the room temperature to an oxidation temperature (T_o = 673 K), with a temperature rate of 8 K/min; an annealing for 1 h at oxidation temperature and, finally, a cooling to room temperature. The optical transmission and reflection spectra of the films were studied in spectral domains ranged between 300 nm and 1700 nm, for the transmission coefficient, and between 380 nm and 1050 nm for the reflection coefficient, respectively. The thin-film surface structures of the metal/oxide/metal type were used for the study of the static current-voltage (I-U) characteristics. The temperature of the substrate during bismuth deposition strongly influences both the optical and the electrical properties of the oxidized films. For lower values of intensity of electric field (ξ < 5 × 10⁴V/cm), I-U characteristics are ohmic.     

Omnidirectional antireflective properties of porous tungsten oxide films with in-depth variation of void fraction and stoichiometry

We report on the fabrication of porous hot-wire deposited WO_x (hwWO_x) films with omnidirectional antireflective properties coming from in-depth variation of both (i) void fraction from 0% at the Si substrate/hwWO_x interface to 30% within less than 7 nm and to higher than 50% at the hwWO_x/air interface, and (ii) x, namely hwWO_x stoichiometry, from 2.5 at the Si/hwWO_x to 3 within less than 7 nm. hwWO_x films were deposited by means of hw deposition at rough vacuum and controlled chamber environment. The films were analyzed by Spectroscopic Ellipsometry to extract the graded refractive index profile, which was then used in a rigorous coupled wave analysis (RCWA) model to simulate the antireflective properties. RCWA followed reasonably the experimental reflection measurements. Void fraction and x in-depth variation, controlled by the hw process, greatly affect the antireflective properties, and improve the omnidirectional and broadband characteristics. The reflection suppression below 10% within the range of 500-1000 nm for angles of incidence up to more than 60° is demonstrated.     

Structural and electrical properties of evaporated Fe thin films

Series of Fe thin films have been prepared by thermal evaporation onto glass and Si(1 0 0) substrates. The Rutherford backscattering (RBS), X-ray diffraction (XRD), Scanning electron microscopy (SEM) and the four point probe techniques have been used to investigate the structural and electrical properties of these Fe thin films as a function of the substrate, the Fe thickness t in the 76-431 nm range and the deposition rate. The Fe/Si samples have a 〈1 1 0〉 for all thicknesses, whereas the Fe/glass grows with a strong 〈1 0 0〉 texture; as t increases (>100 nm), the preferred orientation changes to 〈1 1 0〉. The compressive stress in Fe/Si remains constant over the whole thickness range and is greater than the one in Fe/glass which is relieved when t > 100 nm. The grain size D values are between 9.2 and 30 nm. The Fe/glass films are more electrically resistive than the Fe/Si(1 0 0) ones. Diffusion at the grain boundary seems to be the predominant factor in the electrical resistivity ρ values with the reflection coefficient R greater in Fe/glass than in Fe/Si. For the same thickness (100 nm), the decrease of the deposition rate from 4.3 to 0.3 Å/s did not affect the texture and the reflection coefficient R but led to an increase in D and a decrease in the strain and in ρ for both Fe/glass and Fe/Si systems. On the other hand, keeping the same deposition rate (0.3 Å/s) and increasing the thickness t from 76 to 100 nm induced different changes in the two systems.     

The influence of skew rays on angular losses in air-clad fibres

Detailed experimental transmission properties of high numerical aperture air-clad undoped fibres are presented. Measurements of the angular transmissivity indicate a 15% lower numerical aperture (NA = 0.75) compared to theoretical predictions for the bridge thickness and wavelength ratio of δ/λ = 0.226. The discrepancy is attributed to skew rays that are deliberately launched and which are subject to larger loss rates through diffractive tunnelling in frustrated total internal reflection than meridional rays. Measurements of the angular propagation losses show that light launched at angles less than the critical angle for total internal reflection experiences low initial losses as well as low propagation losses. Light launched at steeper angles experiences a significant initial loss attributed to loss of skew rays within 1.5 m of propagation as well as larger general propagation losses.     

Comparative study on structural and optical properties of CdS films fabricated by three different low-cost techniques

Highly crystalline and transparent cadmium sulphide films were fabricated at relatively low temperature by employing an inexpensive, simplified spray technique using perfume atomizer (generally used for cosmetics). The structural, surface morphological and optical properties of the films were studied and compared with that prepared by conventional spray pyrolysis using air as carrier gas and chemical bath deposition. The films deposited by the simplified spray have preferred orientation along (1 0 1) plane. The lattice parameters were calculated as a = 4.138 Å and c = 6.718 Å which are well agreed with that obtained from the other two techniques and also with the standard data. The optical transmittance in the visible range and the optical band gap were found as 85% and 2.43 eV, respectively. The structural and optical properties of the films fabricated by the simplified spray are found to be desirable for opto-electronic applications.     

Effect of surface steps on sputtering and surface defect formation: molecular-dynamics study of 5 keV Xe bombardment of Pt(1 1 1) at glancing incidence angles

Using molecular-dynamics simulation, we study sputtering and defect formation induced by 5 keV Xe⁺ ion impact on a Pt(1 1 1) surface at oblique and glancing incidence angles. Impact on a terrace produces yield maxima at ?=60-65° incidence angle towards the surface normal. Beyond 75-80°, no damage is produced due to projectile ion reflection. Impact on a dense-packed step, however, produces defects in sizeable numbers up to glancing incidence, ?=85°. The dependence of the yields on the incidence angle and distance of the impact point of the projectile to the step are discussed.     

Optimization of VI/II pressure ratio in ZnTe growth on GaAs(0 0 1) by molecular beam epitaxy

ZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R_VI/II) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R_VI/II to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a R_VI/II of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the R_VI/II. The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a R_VI/II of 4.0 and then increases at higher ratios. It is suggested that the most suitable R_VI/II be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films.     

Microwave absorption properties of rod-shaped Co-Ni-P shells prepared by metallizing Bacillus

The rod-shaped Co-Ni-P shells were prepared by metalling Bacillus. The microstructures and composition of the shells were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive analysis (EDS). The electromagnetic parameters were measured by the coaxial line method in the frequency of 2-18 GHz. It was found that the Bacillus were successfully coated with Co-Ni-P, and the inner structure of the shells are hollow in structure. The shells exhibit excellent microwave absorption properties in 5-17 GHz frequency. The microwave reflection loss is above −10 dB in 5.38-16.6 GHz frequency. The maximum microwave reflection loss reaches −35.83 dB at 9.12 GHz for samples thickness 2.4 mm, and the widest bandwidth for microwave reflection loss above −10 dB is about ∼5.32 GHz for samples thickness 2.0 mm. These results confirm the feasibility of applying Bacillus as biotemplates for fabrication of the metallic shells as lightweight microwave absorption materials are very promising for applications.     

Preparation and microwave-absorbing properties of NiFe2O4-polystyrene composites

NiFe₂O₄ nanoparticles were synthesized by the polyacrylamide gel method with acrylamide as the monomer and N,N′-methylenediacrylamide as lattice agent. The average crystallite sizes of the nickel ferrites annealed at 500, 600 and 800 °C are about 10, 30 and 50 nm, respectively. Ferrite-polystyrene composites were made by hot pressing, and microwave-absorbing properties of the composites with different contents of 35, 45, 55 and 65 wt% ferrite were investigated by testing complex permeability and complex permittivity in the X-band (8.2-12.4 GHz) frequency range. All the parameters, ε′, ε″, μ′ and μ″, increase with increasing ferrite content. The reflection losses were calculated based on a model of a single-layered plane wave absorber backed by a perfect conductor. The composite with 65 wt% ferrite content shows a minimum reflection loss of −13 dB at 11.5 GHz with a −10 dB bandwidth over the extended frequency range of 10.3-13 GHz for an absorber thickness of 2 mm.     

Femtosecond pulsed laser deposition of Ge quantum dot growth on Si(1 0 0)-(2 × 1)

Ge quantum dots were grown on Si(1 0 0)-(2 × 1) by femtosecond pulsed laser deposition at various substrate temperatures using a femtosecond Ti:sapphire laser. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to analyze the film structure and morphology. The morphology of germanium islands on silicon was studied at different coverages. The results show that femtosecond pulsed laser deposition reduces the minimum temperature for epitaxial growth of Ge quantum dots to ∼280 °C, which is 120 °C lower than previously observed in nanosecond pulsed laser deposition and more than 200 °C lower than that reported for molecular beam epitaxy and chemical vapor deposition.     

Interpretation of initial stage of 3C-SiC growth on Si(1 0 0) using dimethylsilane

The initial stage of cubic silicon carbide (3C-SiC) growth on a Si(0 0 1) surface using dimethylsilane (DMS) as a source gas was observed using scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). It was found that the dimer vacancies initially existing on the Si(0 0 1)-(2 × 1) surface were repaired by the Si atoms in DMS molecules, during the formation of the c(4 × 4) surface. From the STM measurement, nucleation of SiC was found to start when the Si surface was covered with the c(4 × 4) structure but before the appearance of SiC spots in the RHEED pattern. The growth mechanism of SiC islands was also discussed based on the results of RHEED, STM and temperature-programmed desorption (TPD).     

Temperature phase-matching properties of mixed chalcopyrite AgGa1−xInxS2 crystal

AgGa_1−xIn_xS₂ with x = 0.14 ± 0.01 was found to be 90° phase-matchable for the second harmonic generation (SHG) of CO₂ laser radiation at 10.591 μm at 203 °C. In addition, temperature-tuned 90° phase-matched difference frequency generation (DFG) at 4.02 μm was demonstrated by mixing the idler output of a Nd:YAG third harmonic pumped β-BBO optical parametric oscillator and its fundamental source at 1.0642 μm. The Sellmeier and thermo-optic dispersion formulas that reproduce well these experimental data are presented.