High power diode-pumped passively Q-switched and mode-locking Nd:GdVO4 laser at 912 nm

A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO₄ laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr⁴⁺:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (T_U) of the saturable absorber on the QML laser performance was investigated. Using the T_U = 95% Cr⁴⁺:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~ 224 kHz and ~ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the T_U = 90% Cr⁴⁺:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.     

Diode-pumped passively Q-switched 912 nm Nd:GdVO4 laser and pulsed deep-blue laser by intracavity frequency-doubling

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr⁴⁺:YAG laser and its efficient intracavity frequency-doubling to 456 nm deep-blue laser were demonstrated in this paper. Using a simple V-type laser cavity, pulsed 912 nm laser characteristics were investigated with two kinds of Cr⁴⁺:YAG crystal as the saturable absorbers, which have the different initial transmissivity (T_U) of 95% and 90% at 912 nm. When the T_U = 95% Cr⁴⁺:YAG was used, as much as an average output power of 2.8 W 912 nm laser was achieved at an absorbed pump power of 34.0 W, and the pulse width and the repetition rate were ∼ 40.5 ns and ∼ 76.6 kHz, respectively. To the best of our knowledge, this is the highest average output power of diode-pumped passively Q-switched Nd³⁺-doped quasi-three-level laser. Employing a BiBO as the frequency-doubling crystal, 456 nm pulsed deep-blue laser was obtained with a maximum average output power of 1.2 W at a repetition rate ∼ 42.7 kHz.     

Tunable, passively Q-switched single-longitudinal-mode Nd:YVO4 laser using a chirped volume Bragg grating

A Nd:YVO₄ laser was locked with a chirped volume Bragg grating to achieve single-longitudinal-mode output. Tuning was performed from 1,063 to 1,065?nm by translating the grating and a maximum output power of 4?W was obtained. With a Cr⁴⁺:YAG saturable absorber, Q-switched pulses with 4?ns and a pulse energy of 5.7???J were achieved which could be frequency doubled in PPKTP with a conversion efficiency exceeding 50?%.     

1444-nm Q-switched pulse generator based on Nd:YAG/V:YAG microchip laser

Q-switched microchip laser emitting radiation at eye-safe wavelength 1444 nm was designed and realized. This laser was based on composite crystal which consists of 4 mm long Nd:YAG active medium diffusion bonded with 1 mm long V:YAG saturable absorber. The diameter of the composite crystal was 5 mm. The initial transmission of the V:YAG part was T ₀ = 94% @ 1440 nm. The microchip resonator consists of dielectric mirrors, directly deposited onto the composite crystal surfaces. These mirrors were specially designed to ensure desired emission at 1444 nm and to prevent parasitic lasing at other Nd³⁺ transmissions. The output coupler with reflectivity 94% for the generated wavelength 1444 nm was placed on the V³⁺-doped part. The laser was operating under pulsed pumping for the duty-cycle up to 50%. With increasing value of mean pumping power a strong decrease of generated pulse length was observed. The shortest generated pulses were 4.2 ns long (FWHM). Stable pulses with energy 34 μJ were generated with repetition rate up to 1.5 kHz. Corresponding pulse peak power was 8.2 kW. The wavelength of linearly polarized TEM₀₀ laser mode was fixed to 1444 nm.     

Self-starting five optical cycle pulse generation in Cr<Superscript>4+</Superscript>:YAG laser

We report stable self-starting near-transform-limited 26-fs pulses at 250-mW output power from a Kerr-lens mode-locked (KLM) Cr⁴⁺:YAG laser using chirped mirrors in combination with prisms. The highest output power achieved in KLM regime was 600 mW at 55-fs pulse duration. The experimental results agree well with the results of theoretical analysis with respect to KLM self-starting ability and stability against continuous-wave and multi-pulse operation. Parameter ranges for stable transform-limited KLM pulses as well as the shortest achievable pulse durations are established. Using an InGaAs-InP semiconductor saturable absorber mirror we could obtain self-starting 57-fs pulses at the average output power of 200 mW. Two-photon absorption was found to be the main mechanism favoring the multiple-pulse operation. Received: 2 May 2002 / Revised version: 16 July 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +43-1/58801-38799, E-mail: sorokina@tuwien.ac.at     

Continuous-wave broadly tunable Cr:ZnSe laser pumped by a thulium fiber laser

We describe a compact, broadly tunable, continuous-wave (cw) Cr²⁺:ZnSe laser pumped by a thulium fiber laser at 1800 nm. In the experiments, a polycrystalline ZnSe sample with a chromium concentration of 9.5 × 10¹⁸ cm⁻³ was used. Free-running laser output was around 2500 nm. Output couplers with transmissions of 3%, 6%, and 15% were used to characterize the power performance of the laser. Best power performance was obtained with a 15% transmitting output coupler. In this case, as high as 640 mW of output power was obtained with 2.5 W of pump power at a wavelength of 2480 nm. The stimulated emission cross-section values determined from laser threshold data and emission measurements were in good agreement. Finally, broad, continuous tuning of the laser was demonstrated between 2240 and 2900 nm by using an intracavity Brewster cut MgF₂ prism and a single set of optics.     

High-peak-power,short-pulse-width,LD end-pumped,passively Q-switched Nd:YAG 946 nm laser

High-peak-power, short-pulse-width diode pumped 946 nm Nd:YAG laser in passively Q-switching operation with Cr⁴⁺:YAG is reported. The highest average output power reaches 3.4 W using the Cr⁴⁺:YAG with initial transmissivity T₀=95%. When the T₀=90% Cr⁴⁺:YAG is employed, the maximum peak power of 31.4 kW with a pulse width of 8.3 ns at 946 nm is generated.     

The study of green laser performances by using composite crystals of different initial transmissions

This paper reported a passively Q-switched green laser of LD pumped linear cavity structure by using Nd:YAG/Cr⁴⁺:YAG composite crystal and the type II phase matching KTP crystal. The dependence of average output power, pulse width and pulse repetition rate on pump power at different initial transmissions of Cr⁴⁺:YAG were measured and analyzed. With Cr⁴⁺:YAG of 80% initial transmission, under pump power of 13.97 W, the output average power is up to 681 mW, with pulse width of 200 ns and pulse repetition rate of 9.1 kHz. The laser operates in a fundamental mode.     

Diode-end-pumped passively Q-switched Nd:Y0.8Lu0.2VO4 laser with Cr:YAG crystal

A diode end-pumped passively Q-switched Nd: Y_0.8Lu_0.2VO₄ laser with a Cr⁴⁺: YAG crystal is first demonstrated in this paper. The maximum continuous wave (CW) output power of 5.59 W is obtained at the incident pump power of 13.07 W with the output transmission T = 20%, resulting in an optical-to-optical efficiency of 42.7%. For Q-switching operation, the measured pulse duration of 8.5 ns, the pulse energy of 45.24 μJ and the peak power of 5.32 kW are respectively obtained for the output transmission of 50% when the Cr⁴⁺: YAG crystal is used with an initial transmission (T₀) of 60%.     

Mn, Cr-co-doped MgAl2O4 phosphors for white LEDs

The Mn-, Cr-doped and Mn, Cr-co-doped MgAl₂O₄ powders have been synthesized via a gel-solid reaction method. Energy transfer from Mn²⁺ to Cr³⁺ has been observed for the first time in the co-doped MgAl₂O₄ phosphors. When excited with blue light with a wavelength of 450 nm at room temperature, both green emission from Mn²⁺ around 520 nm and red emission from Cr³⁺ around 675and 693 nm were generated. Moreover, the color of the emission can be modified by controlling the doping concentrations of Mn²⁺ and Cr³⁺. Therefore, MgAl₂O₄: Mn²⁺, Cr³⁺ could be used as a single-phased phosphor for white LED with a blue LED chip. The energy transfer in terms of Mn²⁺ to Cr³⁺ is determined by means of radiation and reabsorption.     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.     

Growth and optical properties of a new self-Q-switched laser crystal: Cr:Yb3Al5O12

Cr⁴⁺:YbAG (Cr⁴⁺:Yb₃Al₅O₁₂) crystal with a size up to Φ24 mm×30 mm was grown by the Czochralski method. In the absorption spectrum, there are two absorption bands at 939 and 969 nm, respectively, which are suitable for InGaAs diode laser pumping, and there is an absorption band at 1030 nm, which is suitable for passive Q-switched laser output at 1.03 μm. A broad emission spectrum from 970 to 1100 nm was exhibited from 940 nm wavelength pumping. This crystal is promising as a self-Q-switched laser crystal used for compact, efficient, highly stable, passive self-Q-switched thin chip solid-state lasers.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

Diode-pumped passively mode-locked Yb:LSO/SESAM laser

Diode-end-pumped passively mode-locked Yb³⁺:Lu₂SiO₅ (Yb:LSO) lasers both in the picosecond and the femtosecond regimes were demonstrated in this paper. The mode-locked lasers were initiated by using of semiconductor saturable absorber mirrors (SESAM). In the absence of intra-prisms for pulse compression, the laser emitted 1.6 W of output power with pulses width of about 4.3 ps. A pair of SF10 prisms was inserted into the laser cavity, pulses as short as 699 fs was generated around a center wavelength of 1043.6 nm with an average output power of 800 mW and a peak power of 11.0 kW.     

Continuous-wave and passively Q-switched laser performance of a disordered Nd:GYSGG crystal

The performance of continuous wave (CW) and passively Q-switched Nd:GYSGG lasers was investigated for the first time. The CW output powers of 4.2 W with dual wavelength of 1058.4 nm and 1061.5 nm were obtained under the diode pump power of 17 W with slope efficiencies of 26%. By using Cr⁴⁺:YAG wafer as saturable absorber, Q-switching operation was performed and the short pulse with pulse width of 6.6 ns was obtained with the peak power of 9.97 kW.     

Diode pumped Nd:GSAG and Nd:YGG laser at 942 and 935 nm

Two new Nd³⁺ doped crystals show laser activity between the ⁴F_3/2 and ⁴I_9/2 levels. Diode pumped emission of Nd:GSAG at 942 nm wavelength with 950 mW output power and 14% optical to optical efficiency as well as laser emission of Nd:YGG at 935 nm with 700 mW output power and 11% efficiency have been obtained. These wavelengths are useful for water vapour absorption measurements.     

Spectroscopic characteristic and energy levels of Cr in Cr:KAl(MoO4)2 crystal

This paper reports polarized spectral properties and energy levels of Cr³⁺ in KAl(MoO₄)₂ crystal. The absorption and emission cross sections are estimated as 3.72×10^-20 cm² at 669 nm and 2.74×10^-20 cm^-2 at 823 nm for σ-polarization, respectively. The energy levels of Cr³⁺ ion in KAl(MoO₄)₂ crystal were calculated based on the Tanabe-Sugano theory. It is suggested that Cr³⁺ ions occupy at an intermediate crystal field site in Cr³⁺:KAl(MoO₄)₂.     

Efficient passively Q-switched operation of a diode-pumped Nd:GGG laser with a Cr:YAG saturable absorber

The continuous-wave (cw) and passive Q-switching operation of a diode-end-pumped gadolinium gallium garnet doped with neodymium (Nd:GGG) laser at 1062 nm was realized. A maximum cw output power of 6.9 W was obtained. The corresponding optical conversion efficiency was 50.9%, and the slope efficiency was determined to be 51.4%. By using Cr⁴⁺:YAG crystals as saturable absorbers, Q-switching pulse with average output power of 1.28 W, pulse width of 4 ns and repetition rate of 6.2 kHz were obtained. The single-pulse energy and peak power were estimated to be 206 μJ and 51.6 kW, respectively. The conversion efficiency of the output power from cw to Q-switching operation was as high as 84.7%.     

Y3Al5O12 ceramic absorbers for the suppression of parasitic oscillation in high-power Nd:YAG lasers

The objective of this study was to identify a material suitable to absorb radiation at the wavelength of neodymium-doped Yttrium Aluminum Garnet (Y₃Al₅O₁₂:YAG), 1064 nm. M-(M= Sm³⁺, Co²⁺, Co³⁺, Cr³⁺, and Cr⁴⁺) doped highly transparent YAG ceramics were fabricated, and their absorption spectra were measured. Unlike Co²⁺ and Cr³⁺-doped ceramic samples, Co³⁺ and Cr⁴⁺ and Sm³⁺-doped:YAG ceramics were found to have significant absorption at 1064 nm. However, the Sm³⁺-doped YAG clearly emerged as the best candidate because it is also transparent at 808 nm, the pumping wavelength laser diode (LD), and also at most absorption bands used for flash-lamp pumping.     

Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror

We report on a diode pumped passively Q-switched Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.