Theoretical cross sections for keV antiprotons

Partial and total close-coupled semiclassical (impact parameter) cross sections and total classical Monte-Carlo cross sections for interactions in and , p+H collisions are computed in the intermediate keV range for antiprotons, , up to 100 keV lab. Total cross sections for antihydrogen, , formation are found to be large, 10−20×10⁻¹⁶ cm² in a wider energy range than was anticipated earlier, up to some 20 keV lab. New estimates of cross sections for ionisation of atomic hydrogen by antiproton impact are reported for the low-energy range 1–30 keV lab where they are 10−20×10⁻¹⁷ cm², being much larger than the corresponding cross sections for ionisation of hydrogen by proton impact. Data for excitation of H by impact is also presented.     

Crosstalk improvement of a thermo-optic polymer waveguide MZI-MMI switch

A 2 × 2 MZI-MMI switch based on thermo-optic effect with a ridge in the silicon substrate was proposed and the performance of switch was simulated. The main purpose behind this change in substrate layer is to localize the heating at a heated arm single mode waveguide and limit the increasing temperature at a second one. The switch performance of the device should be improved, compare to the usual one. Using finite difference beam propagation method (FD-BPM) and thermal computing simulation based on finite element method (FEM), the results clearly indicate that the MZI-MMI switch can satisfy −31 dB crosstalk at two states.     

A 1 × 2 optical switch using one multimode interference region

A 1 × 2 optical switch using only one multimode interference (MMI) region is designed and demonstrated in GaAs/AlGaAs. This design makes a single MMI region works as MMI coupler using paired interference at “off” state and symmetric interference at “on” state. By injecting a current of 110 mA, the measured on/off ratio and crosstalk are 23 dB and 33 dB, respectively in the demonstrated device with GaAs/GaAlAs.     

Broadband 2 × 2 free-space optical switch using electronically controlled liquid lenses

To the best of our knowledge, proposed is the first liquid lens technology-based 2 × 2 free-space optical switch using a pair of Electronically Controlled Variable Focus Lenses (ECVFLs). By independently controlling the focal lengths of two cascaded liquid ECVFLs, the two input optical beams are spatially adjusted to couple to their respective output beam ports. At 633-nm, the experimental switch demonstrates 26.3 dB crosstalk, 23.0 dB within-channel isolation, 1.1 dB optical loss, and 0.2 dB Polarization Dependent Loss (PDL). A 0.2 dB Wavelength Dependent Loss (WDL) is measured over 633-nm and 514-nm wavelengths. A 1 × 2 optical-fiber coupled switch version is also tested. The proposed switch can be useful in free-space laser systems as well as fiber-based modules.     

Recording simulation beyond 2 Tbit/in on bit-patterned media with shielded planar head

A simple technique for bit-patterned media was proposed to increase achievable areal recording densities beyond 2 Tbit/in². Introduction of longitudinal magnetic anisotropy to the media indicated reduced effect of magnetostatic interaction between the dots. Recording simulation with a shielded planar pole head exhibited increased write shift margins in both down and cross track directions compared with that of the perpendicular anisotropy media. It was suggested that recording of an areal density of 2.5 Tbit/in² would be realized with a down and cross track margins of 3.5 and 4.0 nm, respectively. Better recording performance at high areal densities is expected if suitable head could be designed.     

Image states on beryllium surfaces with low indices

Using the self-consistent pseudopotential method, we have calculated the binding energy of the image states for the (0001) , and surfaces of beryllium. It is shown for the (0001) face that there exists a pronounced resonance image state with n=1 and energy −0.95 eV at the point of the surface Brillouin zone. In the surface, which has a wide band gap in the vicinity of the vacuum level, the calculated image state with n=1 at the point has energy −1.2 eV and is a surface state of gap type. For the face in the vicinity of the point band gaps are absent. However, the symmetry of the bulk states near the vacuum level enables the existence of a resonance image state with n=1 and energy −0.6 eV. Fiz. Tverd. Tela (St. Petersburg) 41, 935–940 (June 1999)     

Energy gaps at neutrality point in bilayer graphene in a magnetic field

Utilizing the Baym-Kadanoff formalism with the polarization function calculated in the random phase approximation, the dynamics of the ν = 0 quantum Hall state in bilayer graphene is analyzed. Two phases with nonzero energy gap, the ferromagnetic and layer asymmetric ones, are found. The phase diagram in the plane ($ \bar \Delta _0 $ \bar \Delta _0 , B), where $ \bar \Delta _0 $ \bar \Delta _0 is a top-bottom gates voltage imbalance, is described. It is shown that the energy gap scales linearly, ΔE ∼ 14B [T] K, with magnetic field.     

A polymeric optical switch array based on arrayed waveguide grating structure

A novel 1 × N optical switch array based on arrayed waveguide grating (AWG) structure is presented in this paper. The device is designed for polymeric materials with a large negative thermooptic (TO) coefficient, which is employed to change the imaging effect and to realize optical switching. When input wavelength is located in a special waveband, the optical signal will image at different output channel as temperature changes. The two-dimensional finite difference beam propagation method (FD-BPM) has been used to simulate a 1 × 9 optical switch array. The insertion loss of this switch array is below 1.37 dB and the extinction ratio is better than 31 dB at 1550 nm, when the coupling and propagation loss is neglected. The optimum design and the simulation results show that this structure could be a multiple wavelengths switching at the same time.     

Microstructure, hydrogenation and optical behavior of Mg-Ni multilayer films deposited by magnetron sputtering

Mg-Ni multilayer films with sequential Mg and Ni layers were prepared by direct current magnetron sputtering. The substrate temperature influences the microstructure of the films greatly. The film deposited at 298 K exhibits multilayered structure, while the film shows nanocrystalline/amorphous composite structure at the deposition temperature of 473 K. The optical properties between hydrogenation/dehydrogenation states of the films were performed using spectrophotometer in visible light region. The film deposited at 473 K can switch from mirror-like metallic state towards brownish yellow transparent state under 0.6 MPa H₂ at 298 K, and the optical transmittance modulation reaches up to 20% both at a wavelength of 770 nm and IR region, while the film deposited at 298 K exhibits low optical change, and the optical switching behavior can hardly be found. The extra free energy stored in the boundary of the nanocrystallines benefits the formation of magnesium-based hydride, resulting in the enhancement of the optical switching properties of the Mg-Ni film deposited at 473 K.     

Properties of neutral charmed mesons in <Emphasis Type="Italic">pA</Emphasis> interactions at 70 GeV

The results of data handling for the E-184 experiment involving the irradiation of the active target, consisting of carbon, silicon, and lead plates by a 70-GeV proton beam are presented. When the two-prong neutral charmed meson decay signal was selected and the cross section for charm production at a near-threshold energy was estimated (σ(c $ \bar c $ \bar c ) = 7.1 ± 2.4(stat.) ± 1.4(syst.) μb/nucleon), some properties of D ⁰ and $ \bar D^0 $ \bar D^0 were investigated. These include the atomic-weight dependence of the cross section on the target mass number (its A dependence); the differential cross sections dσ/dp _t ² and dσ/dx _F; and the dependence of the parameter α on x _F, p _t ², and p _lab. The experimental results are compared with the predictions of the FRITIOF7.02 program.     

Annihilation of ultra low energy antiprotons

The p interaction at ultra low energies is considered taking into account the Coulomb interaction. It is shown that Coulomb effects dramatically modify the usual behaviour of the annihilation cross section. A possibility to extract the scattering length from experimental data is discussed.     

Adsorption-transport modeling of anions through PVD membrane in the presence of the screen phenomenon

A mathematical model for transport and adsorption of chloride and sulphate ions through PVD membrane is presented at two pressures; 8 and 15 bar and 40 °C. The PVD membrane is negatively charged. Saturated brine containing NaCl with the concentration higher than 97% was challenged with the membrane as the feed. Other available ions in the solution were Fe²⁺, Ca²⁺, Mg²⁺ and SO₄²⁻. The screen effect of the cations on the membrane surface charge facilitates the passage of the anions through the membrane without any noticeable electrostatic repulsion. Hermia blocking laws combined with experimental results indicate that the internal pore closure of the membrane by anions and cake deposition on the membrane surface by cations are the separation mechanisms. The transmission of anions through the membrane may be predicted with a simple transport equation (convection and diffusion) combined with an adsorption isotherm. Both Langmuir and Freundlich adsorption isotherms were employed due to the simplicity and validity in liquid systems. The isotherm’s parameters were determined at 10 bar during the unsteady state filtration. Under this condition, the permeate flux and concentration varied sharply due to adsorption. Finally, the model was compared with the experimental rejection data. An acceptable agreement around 95% at 8 bar and 92% at 15 bar was observed between theoretical model and experimental data.     

Anisotropy of elastic strains and specific features of the defect structure of <Emphasis Type="Italic">a</Emphasis>-plane GaN epitaxial films grown on <Emphasis Type="Italic">r</Emphasis>-plane sapphire

The structural state of GaN epitaxial layers grown on r-plane sapphire through metal-organic vapor phase epitaxy has been investigated using X-ray diffraction. The interplanar spacings in two directions in the (11$ \bar 2 $ \bar 2 0) plane of the interface and in the direction perpendicular to it, as well as the diffraction peaks in the ϑ and ϑ-2ϑ scan modes in the Bragg and Laue geometries, are measured on double- and triple-crystal diffractometers. The intensity distribution maps for asymmetric Bragg reflections are constructed for two azimuthal positions of the sample. An analysis of the data obtained has demonstrated that the elastic strain is anisotropic and that the X-ray diffraction pattern parallel to the interface plane is broadened. The layers are contracted in the [1$ \bar 1 $ \bar 1 00] direction and unstrained in the [0001] direction. The broadening of the Bragg reflections in the [1$ \bar 1 $ \bar 1 00] direction is considerably larger than that in the [0001] direction. It is shown using the Williamson-Hall plots for the Bragg and Laue reflections that these broadenings are not related to different degrees of mosaicity but are determined by the local dilatations and misorientations around defects. The data obtained are analyzed, and the conclusions regarding the dislocation structure of the samples are drawn.     

Total cross sections of hadron interactions at high energies in a model with low number of constituents

We consider a quantum chromodynamics (QCD)-hadron interaction model in which the gluon density is low in the initial state wave function in rapidity space and real hadrons are produced from color string decay. In this model, the behavior of the total cross sections of pp, p$ \bar p $ \bar p , π^± p, K ^± p, γp, and γγ interactions is well described. The value of the proton-proton total cross section under the energy of the Large Hadron Collider (LHC) is predicted.     

Neutral current cross-sections for neutrinos on protons

Defining the ratiosr _p =σ(vp →vx)/σ(vp →μ ⁻ x) and we obtain the bounds 0.28 ⩽r _p ⩽ 0.61 and using only the parton model and the data of CDHS group with iron target. We also give the complete set of parton-model relations which would allow the determination of all the neutral-current coupling constants from inclusive cross sections alone.     

Oxygen adsorption on a Mo2C(0 0 0 1) surface: Angle-resolved photoemission study

Oxygen adsorption on a C-terminated α-Mo₂C(0 0 0 1) surface has been investigated with Auger electron spectroscopy, low-energy electron diffraction, and angle-resolved photoemission spectroscopy utilizing synchrotron radiation. It is found that the oxygen atoms adsorb on the Mo atoms in the second layer forming a (1 × 1) orthorhombic periodicity. The oxygen adsorption induces a peculiar state around the Fermi level, which is observed at 0.4 eV in the normal-emission spectra. ARPES measurements show that the state is a partially occupied metallic state. The photoionization cross section of the state shows a maximum at the photon energy of 56 eV, which is assigned as originating from the resonance of the Mo 4d photoemission involving Mo 4p → 4d photoexcitation.     

Frequency modulated and polarization maintaining fiber laser with narrow linewidth

A novel configuration of fiber laser with frequency modulation is presented. Frequency modulation, stable polarization state and narrow linewidth are realized by using the waveguide phase modulator, polarization maintaining devices and saturable absorber. It is shown that the laser output reaches 23 mW, linewidth is less than 1 kHz, polarization extinction ratio is higher than 20 dB and maximum value of frequency deviation can reach 7.5 MHz.     

Side-hole to anti-hole conversion in time-resolved spectral hole burning of ruby: Long-lived spectral holes due to ground state level population storage

We report time-resolved transient spectral hole burning of Verneuil-grown 20 ppm and ca. 0.6 ppm ruby (Al₂O₃:Cr³⁺) in zero field and low magnetic fields B∥c at 4 K. The hole-burning spectroscopy of the 20 ppm sample implies relatively rapid cross relaxation in the ⁴A₂ ground state on the ∼1 ms timescale both in zero field and in low magnetic fields, B∥c, up to 0.2 T. In the 0.6 ppm sample, side-hole to anti-hole conversion is observed both in zero field and in low magnetic fields. This conversion is caused by population storage in ⁴A₂ ground state levels. Spin-lattice relaxation, on the 200 ms timescale, is directly observed from the time dependence of the resonant hole and anti holes in B∥c, consistent with a very low cross-relaxation rate. However, in zero field cross relaxation in the ⁴A₂ ground state is still a significant relaxation mechanism for the 0.6 ppm sample resulting in hole decay in ∼50 ms.     

Quantum key distribution experiment through a PLC matrix switch

Quantum key distribution (QKD) is being studied as a way to provide unconditionally secure communications. Several experiments have shown its feasibility. However, most experiments have used a point-to-point occupied optical link. In order to use QKD for secure communications on a real network, it is preferable to be able to change parties on demand and to have quantum transmission and ordinary optical transmission share the optical network. In this work, QKD through a silica-based planar lightwave circuit (PLC) 8 × 8 non-blocking matrix switch was investigated. We found that an interferometer type switch can work even for a single-photon-level light and that a multi-user QKD network can be constructed using a silica-based PLC 8 × 8 non-blocking matrix switch. In addition, single-photon-level transmission and ordinary optical transmission can share the same 8 × 8 non-blocking matrix switch, so which shows the possibility of sending quantum signals through current optical networks.     

Optical switch with low-phase transition temperature based on thin nanocrystalline VOx film

An optical switch is fabricated by using micromachining technology, which is based on thin nanocrystalline vanadium oxide (VO_x) film, and it consists of four layers: a silicon (Si) substrate layer, a VO_x layer, a Si₃N₄ buffer layer, and an aurum (Au) electrode layer. By applying a switching power supply to a pair of the Au electrodes, the optical switch is controlled to exhibit from an “on” state with semi-conducting phase to an “off” state with metallic phase. The optical switch performance is investigated, and testing results show that its extinction ratio is about 14 dB, its switching response time can achieve about 1.5 ms, and the power dissipation required for stimulating switching to work can be below about 15 mW at least, which is lower than the power dissipation of conventional optical switches based on microstructure thin vanadium dioxide (VO₂) films. This kind of optical switch is potential to be applied as optical switch for optical communication.