Energy transfer coupling of two-photon absorption and reverse saturable absorption for enhanced optical power limiting

We introduce a new approach to enhancing the optical power-limiting function at near-IR wavelength (~800 nm) by coupling effective two-photon absorption in one molecule with excited-state absorption in another molecule. We experimentally demonstrate this approach by using a strong two-photon absorbing dye, AF-380, and a strong reverse saturable absorber, C(60) . A nanosecond time-resolved experiment is used to show that energy transfer from AF-380 to C(60) generates triplet excitation in C(60) that further absorbs the pump beam to enhance the power-limiting function.     

Multicore, tapered optical fiber for nonlinear pulse reshaping and saturable absorption

We present a new method to create a coupled waveguide array via tapering a seven-core telecommunications fiber. The fiber based waveguide array is demonstrated to exhibit the novel physics associated with coupled waveguide arrays, such as discrete diffraction and discrete self-focusing. The saturable absorber characteristics of the device are characterized and an autocorrelation measurement reveals significant single-pass pulse reshaping.     

Spectral response modeling and analysis of p-n-p In_(0.53)Ga_(0.47)As/InP HPTs

We report our results on the modeling of the spectral response of the near-infrared(NIR) lattice-matched p-n-p In_(0.53)Ga_(0.47)As/InP heterojunction pbototransistors(HPTs).The spectral response model is developed from the solution of the steady state continuity equations that dominate the excess optically generated minority-carriers in the active regions of the HPTs with accurate boundary-conditions.In addition,a detailed optical-power absorption profile is constructed for the device modeling.The calculated responsivity is in good agreement with the measured one for the incident radiation at980 nm,1310 nm,and 1550 nm.Furthermore,the variation in the responsivity of the device with the base region width is analyzed.     

Studies on third-order nonlinear optical properties and reverse saturable absorption in polythiophene/poly (methylmethacrylate) composites

We report here the studies on third-order nonlinear optical properties of two novel polythiophene composite films investigated using the Z-scan technique. The measurements were carried out using a Q-switched, frequency doubled Nd:YAG laser producing 7 nanosecond laser pulses at 532 nm. Z-scan results reveal that the composite films exhibit self-defocusing nonlinearity. The real and imaginary parts of the third-order nonlinear optical susceptibility were of the order 10⁻¹² esu. The effective excited-state absorption cross section was found to be larger than the ground state absorption cross section, indicating that the operating nonlinear mechanism is reverse saturable absorption (RSA). The polythiophene composite films also exhibit good optical power limiting of the nanosecond laser pulses. The nonlinear optical parameters are found to increase on increasing the strength of the electron-donor group, indicating the dependence of χ ⁽³⁾ on the electron-donor/acceptor units of polythiophenes.     

Structural and electronic properties of group III Rich In0.53Ga0.47As(001)

The structural and electronic properties of group III rich In_0.53Ga_0.47As(001) have been studied using scanning tunneling microscopy/spectroscopy (STM/STS). At room temperature (300 K), STM images show that the In_0.53Ga_0.47As(001)–(4 × 2) reconstruction is comprised of undimerized In/Ga atoms in the top layer. Quantitative comparison of the In_0.53Ga_0.47As(001)–(4 × 2) and InAs(001)–(4 × 2) shows the reconstructions are almost identical, but In_0.53Ga_0.47As(001)–(4 × 2) has at least a 4× higher surface defect density even on the best samples. At low temperature (77 K), STM images show that the most probable In_0.53Ga_0.47As(001) reconstruction is comprised of one In/Ga dimer and two undimerized In/Ga atoms in the top layer in a double (4 × 2) unit cell. Density functional theory (DFT) simulations at elevated temperature are consistent with the experimentally observed 300 K structure being a thermal superposition of three structures. DFT molecular dynamics (MD) show the row dimer formation and breaking is facilitated by the very large motions of tricoodinated row edge As atoms and z motion of In/Ga row atoms induced changes in As–In/Ga–As bond angles at elevated temperature. STS results show there is a surface dipole or the pinning states near the valence band (VB) for 300 K In_0.53Ga_0.47As(001)–(4 × 2) surface consistent with DFT calculations. DFT calculations of the band-decomposed charge density indicate that the strained unbuckled trough dimers being responsible for the surface pinning.     

Determination of breakdown voltage of In_(0.53)Ga_(0.47)As/InP single photon avalanche diodes

We examine the saturation of relative current gain of In0.53 Ga0.47As/InP single photon avalanche diodes(SPADs) operated in Geiger mode.The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method.The analysis method is temperature-independent and can be applied to most SPADs.     

The defect density of a SiNx/In0.53Ga0.47As interface passivated using (NH4)2Sx

Passivation of the electronic defect states at a SiN_x/InGaAs interface has been achieved using (NH₄)₂S_x treatments of the InGaAs surface. The X-ray photoelectron spectroscopy technique was used to investigate the mechanism of sulfur passivation. The results indicate that sulfur treatment can effectively erase the native oxides, and S-In, S-Ga and S-As bondings are formed after sulfidation. The fabrication of Au/SiN_x/InGaAs metal–insulator–semiconductor diodes has been achieved by depositing a layer of SiN_x on (NH₄)₂S_x-treated n-InGaAs using the plasma enhanced chemical vapor deposition technique. The effect of passivation on the InGaAs surface before and after annealing was evaluated by current–voltage and capacitance–voltage measurements. The results indicate that the SiN_x passivation layer exhibits good insulative properties. The annealing contributes to the decrease of the fixed charge density and the minimum surface state density, which are 4.5×10¹¹ cm^-2 and 3.92×10¹¹ cm^-2 eV^-1, respectively. A 256×1 InP/InGaAs/InP heterojunction short-wavelength infrared detector, fabricated with the sulfidation plus a SiN_x passivation layer, has shown a good response uniformity of 4.81%. PACS 73.20.At; 73.40.Kp; 73.40.Rw; 81.40.Rs; 71.55.Eq     

Multiferroic behavior and magnetoelectric effect in CoFe2O4/Pb(Zr0.53Ti0.47)O3 thick films

A CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃ (CFO/PZT) multiferroic composite thick film assisted by polyvinylpyrrolidone (PVP) was prepared by a hybrid sol–gel processing and spin coating technique. Scanning electronic microscopy indicated a porous microstructure with a thickness of 6.2 μm. Pure PZT perovskite phase observed from x-ray diffraction suggested that the low ratio of CFO particles was deeply buried in the PZT matrix. Ferroelectric and ferromagnetic properties were observed simultaneously at room temperature as well as a lower leakage current compared with a CFO/PZT thin film. The dynamic and static magnetoelectric effects were strongly dependent on the applied DC/AC magnetic field but their values were very low. The results demonstrated the prediction that ferroelectric and ferromagnetic properties can induce a strong magnetoelectric coupling only if a dense microstructure was achieved.     

Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing

We investigated the effect of rapid thermal annealing (RTA) on the photoluminescence (PL) and electroluminescence of the In_0.53Ga_0.47As/In_0.53(Ga_0.6Al_0.4)_0.47As multiple quantum well (MQW) laser structure with InGaAlAs barrier layers provided by the digital-alloy technique. The SiO₂- (Si₃N₄-) capped samples followed by the RTA exhibited a significant improvement of PL intensity without any appreciable shifts in PL peak energy for settings of up to 750 °C (800 °C) for 45 s. This improvement is attributed to the annealing of nonradiative defects in InAlAs layers of digital-alloy InGaAlAs and partially those near the heterointerfaces of the digital-alloy layers. The InGaAs/InGaAlAs MQW laser diodes fabricated on the samples annealed at 850 °C show a hugely improved lasing performance. Received: 2 September 2002 / Accepted: 3 September 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +82-62/970-2204, E-mail: ytlee@kjist.ac.kr     

Switchable optical nonlinear properties of W_(18)O_(49) nanowires by Ag nanoparticles supported

<正>During the past decades,nonlinear optical(NLO)materials have attracted special interest because of their potential applications in photonic devices,such as optical switching,frequency conversion and electro-optic modulators.Among the finding ways to obtain excellent NLO materials with both large NLO response and short response time,the most common approach is to design and prepare new materials     

A neutron diffraction study of the glass transition in (KBr)0.47(KCN)0.53

The molecular crystal (KBr)_0.47 (KCN)_0.53 has been investigated by elastic neutron diffraction at the transition from the paraelastic to the orientational glass state. The freezing temperature is characterized by the onset of a momentum transfer dependent broadening of the diffraction lines indicating the transition from a crystalline to an amorphous state.     

利用不完全自锁模激光研究C60的反饱和吸收效应

本文报道首次采用色心晶体的不完全自锁模激光（１０６４ｎｍ）对Ｃ６０分子反饱和吸收效应的研究，实验结果与采用平均过程的研究方法是一致的，文中还讨论了Ｃ６０分子反饱和吸收效应产生的原因。     

The nonlinear refraction and nonlinear absorption in 4-(4,6-diaminopyrimidin-2-ylthio) substituted double-decker Lu(III) phthalocyanine

A 4-(4,6-diaminopyrimidin-2-ylthio) substituted double-decker Lu(III) phthalocyanines (4) have been prepared and characterized by elemental analysis, IR, UV-vis and ¹H NMR spectroscopies. The nonlinear refractive index, nonlinear absorption and the optical limiting (OL) performance of the compound 4 in a 0.5 mm spectroscopic cell in DMF solution were investigated by using 4 ns pulse laser at 532 nm. Z-scan experiments have been conducted between 0.24 and 2.39 GW/cm² peak intensities for 10 Hz repetition rate and also between 2.39 and 23.89 GW/cm² peak intensities for 1 Hz repetition rate. The thermal effect contributes to the nonlinear response of the material higher than 0.72 GW/cm² peak intensity at 10 Hz. We measured the effective nonlinear refractive index of the material as 1.2×10⁻¹¹ esu at 3.5×10⁻⁴ M concentration with the peak intensity less than 0.72 GW/cm² and we found that nonlinear absorption was very small. On the other hand, when concentration is increased to 2.4×10⁻³ M material's nonlinear absorption becomes dominant mechanism for the nonlinear response and the compound 4 indicates OL behavior at 2.4×10⁻³ M concentration.     

Near-field plasmonic coupling for enhanced nonlinear absorption by femtosecond pulses in bowtie nanoantenna arrays

Plasmonic bowtie nanoantennas (BNAs) can exhibit a strong enhancement of optical field, leading to large nonlinear effects. We investigated the nonlinear optical absorption of an array of BNA by femtosecond pulses, using the open-aperture Z-scan technique. The BNA array composed of paired gold nanotriangles was fabricated by nanosphere lithography. We experimentally demonstrated that upon decreasing the gap width, nonlinear absorption is enhanced due to both the enhancement of near-field coupling of nanoantennas and the minimum of the spectral detuning between the center wavelength of the laser for excitation and the localized surface plasmon resonances. The role of near-field resonant plasmonic coupling in BNA is analyzed theoretically and confirmed by our simulations.     

Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As

The passivation of III-V semiconductor materials with sulphur is widely reported to reduce interface state defects and improve semiconductor device performance. The most common approach utilises ammonium sulphide ((NH₄)₂S), however there are wide variations in the reported processing parameters involved in this procedure. This study provides a comprehensive review of the various parameters used as well as determining the optimal processing conditions in terms of sample pre-treatments, temperature of the (NH₄)₂S solution, length of time the sample is in the solution and (NH₄)₂S concentration, by measuring the level of residual native oxides and surface roughness by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively.     

Edge assisted epitaxy of CsPbBr3 nanoplates on Bi2O2Se nanosheets for enhanced photoresponse

Bi$_{2}$O$_{2}$Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties. However, it is still a great challenge to construct the heterostructures with direct epitaxy of hetero semiconductor materials on Bi$_{2}$O$_{2}$Se nanosheets. Here, a two-step chemical vapor deposition (CVD) route was used to directly grow the CsPbBr$_{3}$ nanoplate-Bi$_{2}$O$_{2}$Se nanosheet heterostructures. The CsPbBr$_{3}$ nanoplates were selectively grown on the Bi$_{2}$O$_{2}$Se nanosheet along the edges, where the dangling bonds provide the nucleation sites. The epitaxial relationships between CsPbBr$_{3}$ and Bi$_{2}$O$_{2}$Se were determined as ${[200]}_{\rm Bi_{2}O_{2}Se}||{[110]}_{\rm CsPbBr_{3}}$ and ${[110]}_{\rm Bi_{2}O_{2}Se}||{[200]}_{\rm CsPbBr_{3}}$ by transmission electron microscopy characterization. The photoluminescence (PL) results reveal that the formation of heterostructures results in the remarkable PL quenching due to the type-I band arrangement at CsPbBr$_{3}$/Bi$_{2}$O$_{2}$Se interface, which was confirmed by ultraviolet photoelectron spectroscopy (UPS) and Kelvin probe measurements, and makes the photogenerated carriers transfer from CsPbBr$_{3}$ to Bi$_{2}$O$_{2}$Se. Importantly, the photodetectors based on the heterostructures exhibit a 4-time increase in the responsivity compared to those based on the pristine Bi$_{2}$O$_{2}$Se sheets, and the fast rise and decay time in microsecond. These results indicate that the direct epitaxy of the CsPbBr$_{3}$ plates on the Bi$_{2}$O$_{2}$Se sheet may improve the optoelectronic performance of Bi$_{2}$O$_{2}$Se based devices.     

Anomalous phonon softening in the topological insulator Sn-doped Bi_(1.1)Sb_(0.9)Te_2S

Investigations into the phonon behavior provide important information on interactions between different excitations in quantum materials. We perform a detailed study of the phonon behavior in the topological insulator Sn-doped Bi_(1.1)Sb_(0.9)Te_2S using infrared spectroscopy. We observe two IR-active phonon modes at about 64 and 165 cm~(-1), which are labeled with α and β, respectively.While the evolution of the β mode with temperature can be well described by the expected anharmonic decay process, the αmode shifts to lower frequencies with decreasing temperature. Such an anomalous softening of the α mode may arise from the charged-phonon effect due to the coupling between this mode and the topological surface states in Sn-doped Bi_(1.1)Sb_(0.9)Te_2S.     

Optimization of the passively Q-switched laser with a novel central semiconductor saturable absorption mirror (C-SESAM)

The diode-pumped passively Q-switched laser, realized with a novel central semiconductor saturable absorption mirror (C-SESAM), can obtain much higher repetition rate and shorter pulse duration which have been proved theoretically and experimentally. Therefore, it is essential to optimize this kind of lasers to achieve many of the desired properties. The normalized rate equations are solved numerically, when the direct band-gap absorption of the InGaAs thin layer, the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs substrate are simultaneously considered. Some new normalized parameters are introduced and the key parameters of an optimally passively Q-switched laser are determined, including the optimal normalized coupling parameter and the optimal normalized saturable absorber parameters, which can maximize the output energy. A group of general curves are generated, and sample calculations for a diode-pumped Nd³⁺:YVO₄ laser with a novel central semiconductor saturable absorption mirror (C-SESAM) are presented to demonstrate the use of the curves and the relevant formulas.