Relaxation of anomalous muonium in silicon

The relaxation rate ^* of anomalous muonium in silicon with different dopant concentrations was investigated as a function of temperature. Below 140 K, a close correlation between ^* and the concentration of conduction electrons was found. We conclude from this behavior that the relaxation of anomalous muonium in this temperature region is caused by the scattering of conduction electrons. A microscopic model is developed and the value of the exchange interactionJ _ex is derived.The financial support of the Bundesminister für Forschung und Technologie is gratefully acknowledged.     

ESR and conductivity studies of doped polyacetylene

Low temperature ESR spectra of cis-rich and trans-rich polyacetylene, lightly doped with pentafluorides (AsF₅, SbF₅) exhibit two clearly distinguishable ESR lines. Detailed studies of these two lines as a function of temperature, doping concentration and microwave power indicate that one of these lines originates from localized spins, the other from conduction electrons. The concentration of the localized spins, generally speaking, decreases with doping. The Pauli-like susceptibility associated with the conduction electrons changes from 1.5×10^–7 to 15×10^–7 emu·cm³/mole for various doping levels and correlates with the conductivity of the same samples. The longitudinal relaxation time of the localized spins in doped trans-rich was found to beT ₁100 s at low temperatures, consistent with values of others in undoped trans rich. The temperature dependence of the homogeneous transverse relaxationT ₂ of the localized spins in doped trans-rich polyacetylene is similar to that of undoped trans polyacetylene. These facts show that the localized spins originate from undoped regions of the doped polyacetylene, perhaps due to inhomogenous doping. Our results are consistent with either formation of metallic islands, or, probably more, with impurity band conduction in strongly disordered semiconductors.     

Superconductivity-induced phonon self-energy effects in high-T c superconductors

The superconductivity-induced self-energy of phonons has been calculated in the lowest-order conserving approximation using conventional strong-coupling theory and also including scattering at nonmagnetic impurities. Results for the dependence of the shift and the width of phonons on temperature and scattering rates are presented and their sensitivity on the strength of the electron-phonon coupling and on impurities is pointed out. The theory is applied to optical data in YBa₂Cu₃O₇ using the experimental one-phonon density, the value ofT _c and [^*=0.25 as inputs. Neglecting anisotropies and the momentum dependence of the electron-phonon coupling the resulting strong-coupling model with 2.9 yields results which are in good agreement with the data, in particular, if impurity scattering is taken into account.     

Hole-phonon scattering in zinc doped GaSb

The phonon thermal conductivity values in Zn-doped GaSb are explained for hole concentrations ranging from 2 × 10¹⁷ to 4 × 10¹⁹ cm^-3. The concentration dependence of thermal conductivity above 3 × 10¹⁸ cm^-3 is similar to other doped materials and is explained by considering the scattering of phonons by free electrons (holes) given by Ziman and Kosarev and applying the screening effects suggested by Crossby and Grenier. The density-of-states effective mass is kept constant and the dilatation deformation potential is found to increase with hole concentration. For impurity concentrations less than 3 × 10¹⁸ cm^-3, the thermal conductivity is found to increase with hole concentration. Since this concentration region is below the metal-insulator transition, the theory of scattering of phonons by holes bound to the impurity atoms explains the conductivity results. The values of acceptor hole radius and deformation potential constants are in agreement with the experimental values.     

Effect of electron-hole scattering on the resistivity and Hall coefficient in YBaCuO

Coupled electron-hole (e-h) Boltzmann equations are applied to evaluate the resistivity and Hall coefficientR _H for a two-band model system with e-h, impurity, and phonon scatterings. We show that the anomalous temperature dependences =T andR _H ^–1 =T observed on YBaCuO compounds can be obtained by assuming a special two-band model in which the e-h scattering is responsible for the resistivity and the chemical potential varies linearly with temperature.     

Anisotropy effects in superconductors with magnetic impurities. I

The influence of Fermi surface anisotropy on the superconducting transition temperature of strong coupling superconductors containing magnetic and nonmagnetic impurities is investigated. It is found that the concentration dependent transition temperature shows typical departures from the corresponding curve of a single-band isotropic superconductor. These departures occur either for very small ( _ij) or for very large ( _ij0) interband scattering of conduction electrons on nonmagnetic impurities (i, j label the states in different bands or in different zones of the Fermi surface). In the case of unequal cut-off frequencies for different zones on the Fermi surface it is shown that all effects of unequal cut-offs can be eliminated by introducing effective electron-phonon pairing interactions. In the presence of impurities these effective pairing interactions become weakly impurity dependent giving rise to a new pair-weakening mechanism. Quantitative results on the basis of a simple two-band or two-zone model are presented.     

Comment on Eliashberg's free energy of a strong-coupling metal

We derive in the Migdal-Eliashberg approximation new formulas for the free energy, entropy, and specific heat of conduction electrons coupled to phonons. Analytic results in terms of standard functions are obtained for Einstein phonons, and the calculation for realistic phonon spectra is reduced to simple, weighted integrals over Eliashberg's spectral function ² F(). Our derivation requires a careful analysis of the range of validity of the Midgal-Eliashberg approximation which leads to some insight into the problem of lattice instabilities induced by a strong electron-phonon coupling.     

Tunable Photoluminescence Spectra of Doped Semiconductor Superlattices

Taking into account the density state tails appearing due to fluctuations of impurity concentrations, the spontaneous emission spectra of doped semiconductor superlattices are calculated. In the framework of the model developed, the explanation of the experimentally observed longwave edge and the shift of the photoluminescence spectra with increase in the excitation level and temperature is given. The role of the defects formed on -irradiation is discussed, and the lifetime of current carriers is evaluated depending on the design parameters and excitation conditions of the GaAs doped superlattices.     

Ab initio calculation of the deformation potentials for intervalley phonons in silicon

The fully self-consistent first-principles calculations of electron scattering from short-wavelength phonons between lower valleys in the conduction band of a silicon crystal are carried out for the first time. The calculations of the lattice constant, the electron and phonon spectra, and the scattering probabilities are performed in the framework of a unified approach within the electron density functional theory. The theory contains no phenomenological assumptions regarding the relative position of minima in the conduction band, effective masses of carriers, interatomic forces, and scattering probabilities. The electron-phonon coupling constants (deformation potentials) for symmetry-allowed f and g transitions are calculated. The calculated constants lie in the range of values measured in different experiments involving intervalley transitions in silicon.     

Pion photoproduction on3He including final-state interaction

Coherent ⁰ and ⁺ photoproduction and elastic and charge-exchange pion scattering on³He has ben calculated in a consistent model. Realistic three-body Faddeev wave functions have been used and full nonlocal DWIA results for pion photoproduction are obtained. Furthermore, two-step processes such as³He(, ⁰)³He(⁰, ⁺)³H are included giving rise to unexpected large results. The comparison with experimental data is very good over a wide range of photon energies and nuclear momentum transfers. A long-time discrepancy between previous impulse-approximation calculations and experimental data has been removed.Supported by the Deutsche Forschungsgemeinschaft (SFB 201)     

Exact solution of the multichannel Kondo problem,scaling, and integrability

In this work we give the exact solution of the model describing the scattering of conduction electrons by an impurity in the orbital singlet state (so-calledn- channel Kondo problem). Depending on the relation between the impurity spinS and the number of electron scattering channelsn, the model behaves differently at low energies. At 2S the effective charge increases to infinity at low energies, whereas atn > 2S it tends to a finite fixed point. The model under study is the first example of the one-dimensional quantum field theory exhibiting scaling behavior.     

Enhancement of the electron mobility with infrared photoexcitation in Si: Te at low temperatures

Hall measurements on Te-doped silicon (N _Te 10¹⁶ cm^–3) have been performed in the temperature range between 10 K and 300 K with infrared photoexcitation of electrons into the conduction band. The samples exhibit electron Hall mobilities which are increased by approximately 50% compared to measurements in the dark. The increased electron mobility can be correlated with an increased electron population of shallow donor levels by photoexcitation. Coulomb scattering due to charged shallow donor centers is converted into less efficient dipole scattering (Te-acceptor pairs) by the light-induced redistribution of electrons.     

Analysis of electrical conduction in an <Emphasis Type="BoldItalic">n</Emphasis> -type GaAs epilayer

The magnetic field dependence of conductivity tensor components, magnetoresistance, and the Hall coefficient have been analyzed in an n-type Si-doped GaAs epilayer at temperatures from 11 to 295 K. Carriers from the conduction band and the impurity band take part in the electrical conduction. The conduction band is located in the epilayer and the impurity band is located in a narrow layer, less than 0.1 m thick, between the GaAs buffer and GaAs semi-insulating substrate. At temperatures below 20 K the localization and magnetic freeze-out of the conduction band electrons have been taken into account as quantum corrections to the electrical conduction. The dependence of the mobility on energy has been considered in the analysis of the experimental data. A wide peak of partial conductions versus mobility appears in the mobility spectrum. From the analysis of the mobility spectrum of conduction band electrons it follows that at low temperatures the mobility of non-degenerated conduction band electrons is limited by scattering on screened charge centers. The mobility spectrum technique has been used as a tool for interpolation and extrapolation of the experimental data beyond the experimentally investigated magnetic field range. PACS 72.20.-i; 72.60.+g     

On Suhl's dispersion equations for dilute magnetic alloys in a finite magnetic field

A one dimensional, nonlinear, singular integral equation was recently shown to be equivalent to Suhl's dispersion equations for the Kondo-problem of a half-spin magnetic impurity in a finite magnetic field. We investigate this integral equation further analytically and numerically and obtain numerical solutions which we use for a calculation of transport coefficients. The normal part of the scattering potential of the magnetic impurity is included via ans-wave phase shift. The transport coefficients are universal functions of the ratiosT/T _K andB/B _K of the temperatureT and the zero magnetic field Kondo-temperatureT _K and of the magnetic inductionB and the Kondo magnetic inductionB _K. We find maxima in the electrical and thermal resistivities as functions ofT/T _K forBB _K. These are typical Kondo phenomena, and can be influenced by. Interference of and the phases of Kondo-scattering amplitudes leads to dramatic effects in the thermopower and the Hall coefficient.SFB 125The numerical part of this work was performed at the Institut für Festkörperforschung, Kernforschungsanlage Jülich, F.R. Germany     

Effect of impurity scattering of a tunneling electron on variable-range hopping conduction

Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction a to electron localization lengtha. This correction depends on the impurity scattering length and impurity concentrationN and may be of the order ofa(Na ³ ) ora(Na ³ )^1/2.     

Conductivity anisotropy ofn-type silicon in the range of warm and hot carriers

The electric conductivity ofn-type silicon was measured as a function of the field intensity in different crystallographic directions at temperatures between 78 and 275 °K. From the data at medium fields (range of warm carriers) the coefficientsβ ₀ andγ ₀ ofSchmidt-Tiedemann's anisotropy theory were determined. Especially at low temperatures these coefficients are different for lightly and heavily doped crystals. The differences can be explained by the influence of ionized impurity scattering in addition to lattice scattering. The repopulation of the energy valleys of the conduction band as a function of the field intensity was calculated from the ratioγ ₀/β ₀ and — in the range of hot carriers — from the conductivities measured in <001> and <111> directions. A maximum increase of population of a cool valley was found to be between 0.5 and 1.2 of the zero-field population, depending on the particular sample, the field intensity being about 0.5 kV/cm and the lattice temperature 89 °K.     

Reversibler Gleichfeld- und Mikrowellen-Durchschlag in n-Typ-Germanium bei 4,2 °K

The microwave induced breakdown characteristic inn-type germanium at 4.2 °K has been observed and compared with the d.c. induced breakdown characteristic obtained from the same sample. The effective microwave breakdown field intensity is nearly equal to the field intensity observed in d.c. induced breakdown. However, in the breakdown region with conductivities greater than 0.1 ohm^?1 cm^?1 a relaxation effect was found and interpreted qualitatively as momentun relaxation. In the initial breakdown the relaxation time τ _m is small,ω ²τ _m ² being ?1 whereω/2π=9·10⁹s^?1 is the microwave frequency. The relaxation time is determined by predominant neutral impurity scattering with at last 5·10¹⁴ impurities per cm³. This scattering mechanism becomes ineffective when the impurities are ionized by hot carriers. Ionized impurity scattering or acoustic phonon scattering will then be predominant with increased and energy dependent values of τ _m . The increased phase shift between carriers and field causes a decreased energy transfer from the field to the carriers, an accordingly smaller ionization rate, and finally results in a nearly constant a.c. conductivity. The observed anisotropy of the breakdown field intensity is in qualitative agreement with the assumption that only carriers in “hot” valleys of the conduction band initiate the breakdown by impact ionization. The unsufficient quantitative agreement may be due to an inhomogeneity of doping which is suggested by comparing the values of the ohmic low temperature conductivity of the samples.     

Anisotropy effects in superconductors with magnetic impurities

The influence of Fermi surface anisotropy on the specific heat jumps,C, at the phase transition for superconductors containing magnetic and nonmagnetic impurities is discussed. In the framework of a simple two-band or two-zone model we find for small interband electron-phonon coupling constants characteristic maxima in theC(T _c )-curve.These departures from the correspondingC-curve of a single-band isotropic superconductor are mostly pronounced forweak andstrong interband Coulomb scattering of conduction electrons on nonmagnetic ions. There is only a small range of intermediate scattering rates for which the maxima are smeared out.Work performed within the research program of the Sonderforschungsbereich 125 — Aachen/Jülich/Köln     

Cross-over effects in heavy-fermion superconductors

The influence of correlation effects on superconductivity in lanthanide and actinide compounds is investigated theoretically. As driving mechanism for the formation of heavy-fermion Cooper pairs different electron-phonon interactions are considered and discussed within the Anderson lattice model. The elimination of the bare electron-phonon interactions and a BCS-like truncation procedure lead to the appearance of different types of Cooper pairs. The stability of these Cooper pairs in the Kondo lattice state is studied by using a semi-phenomenological parameter which effectively describes the correlation off electrons. It is found that hybrid pairing is less important and that superconductivity of conduction andf electrons always occurs simultaneously. Furthermore, in the case of strongly correlatedf electrons a cross-over takes place from mainly heavy-fermion superconductivity to conduction electron superconductivity.Dedicated to B. Mühlschlegel on the occasion of his 60th birthday     

Diffusion of electrons scattered by short-range impurities in a quantizing magnetic field

Formulas for transverse diffusion and conductivity in a semiconductor are obtained for electrons scattered by neutral impurities in a quantizing magnetic field. The formulas are valid for an impurity potential of arbitrary depth. Based on Kubo’s theory [1], calculations are performed using electron wavefunctions of the problem of single-impurity scattering in a magnetic field [2]. The poles of the scattering amplitude correctly determine electron eigenstates and magnetic impurity states. As a result, an exact expression is found for the dependence of transverse diffusion coefficient D _⊥ on longitudinal electron energy ? due to scattering by short-range (neutral) impurities. The behavior of D _⊥(?) is examined over an interval of magnetic field strength for several values of impurity potential depth. The experimental observability of diffusion and conductivity using IR lasers is discussed.