Influence of the Native Oxide Layer on the Silicon Surface During Initial Stages of Nitridation

 Thin SiO₂ layers were produced by thermal oxidation of Si wafer material. To study the effect of nitridation on the oxide layers, the specimens were nitrided in a furnace at high temperature. Non-destructive ion beam analysis was performed to determine changes in the elemental concentrations and depth profiles of the major components. In particular, N and O concentrations were measured using the non-resonant nuclear reactions ¹⁴N(d, α)¹²C and ¹⁶O(d, p)¹⁷O, respectively. To obtain depth profiles of the as-prepared and nitrided specimens, the samples were measured with RBS and heavy ion elastic recoil detection analysis. The ion beam analyses revealed an increase in thickness of the SiO₂ layers with temperature. The specimens nitrided at 1200 °C were almost free of N. Surface topology investigations with scanning electron microscopy revealed concentric annular artificial patterns at the surfaces. In the centre of the pattern, only silicon was measured. Additionally, a band consisting of Si, O, and N surrounding the pattern was discovered. The findings are in agreement with specimens prepared at higher temperatures. Received June 19, 2000. Revision December 9, 2000.     

Low temperature plasma for the preparation of crater walls for compositional depth profiling of thin inorganic multilayers

An indirect, compositional depth profiling of an inorganic multilayer system using a helium low temperature plasma (LTP) containing 0.2% (v/v) SF₆ was evaluated. A model multilayer system consisting of four 10 nm layers of silicon separated by four 50 nm layers of tungsten was plasma‐etched for (10, 20, 30) s at substrate temperatures of (50, 75, and 100) °C to obtain crater walls with exposed silicon layers that were then visualized using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) to determine plasma‐etching conditions that produced optimum depth resolutions. At a substrate temperature of 100 °C and an etch time of 10 s, the FWHM of the second, third, and fourth Si layers were (6.4, 10.9, and 12.5) nm, respectively, while the 1/e decay lengths were (2.5, 3.7, and 3.9) nm, matching those obtained from a SIMS depth profile. Though artifacts remain that contribute to degraded depth resolutions, a few experimental parameters have been identified that could be used to reduce their contributions. Further studies are needed, but as long as the artifacts can be controlled, plasma etching was found to be an effective method for preparing samples for compositional depth profiling of both organic and inorganic films, which could pave the way for an indirect depth profile analysis of inorganic–organic hybrid structures that have recently evolved into innovative next‐generation materials. Copyright © 2016 John Wiley & Sons, Ltd.     

Effects of electron–electron interaction on the band structure in polydiacetylenes

The ground‐state band structure of polydiacetylenes is theoretically studied with the extensional Su–Schriffer–Heeger model supplemented by electron–electron interactions. The results show the following. First, the interval of valence bands (conduction bands) increases because of the electron–electron interactions. Second, the effect of the on‐site Coulomb energy (U) is different from that of the nearest neighbor Coulomb repulsion (V); the competition between U and V shows that U makes the bandwidth narrower and the gap broader, whereas V makes the bandwidth broader and the gap narrower. There is a critical value of U/V. Third, the whole band width (E_w) decreases when the U/V ratio is less than 1.0 and increases when the U/V ratio is greater than 1.0 at V = 2.0 eV. Thus, the ground‐state band structure is sensitive to the U/V ratio. The results also show that electron–electron interactions can play an important role in the band structure of polydiacetylenes. © 2000 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 38: 1656–1661, 2000     

Sol‐Gel‐Process in the Ammono‐System – a Novel Access to Silicon Based Nitrides

Controlled coammonolysis of elementalkylamides in aprotic organic solvents at low temperatures have been shown to result in the formation of polyazanes. The synthetic procedure developed may be addressed as “sol‐gel‐route in the ammono system”. Pyrolysis of these novel polymer precursors gave access to multinary nitrides. For the model systems Si(NHMe)₄/B(NMe₂)₃, Si(NHMe)₄/Ti(NMe₂)₄, and Si(NHMe)₄/Ta(NMe₂)₅ polymeric boro‐, titano and tantalosilazanes were obtained. Pyrolysis in ammonia at 1000 °C yielded amorphous silicon boron nitride, silicon titanium nitride and silicon tantalum nitride powders; further heating of the nitride powders at 1500 °C in nitrogen atmosphere led to the formation of partly crystalline composites of α‐Si₃N₄ and amorphous silicon boron nitride for the Si/B/N system, a composite of finely dispersed TiN and amorphous silicon titanium nitride for the Si/Ti/N system, and crystalline TaN and amorphous silicon nitride for the Si/Ta/N system. Furthermore, the structure and pyrolysis chemistry of the polymeric intermediates, as well as the morphology of the pyrolysis products, were studied by NMR, MAS‐NMR, FT‐IR, DTA‐TG‐MS, XRD, SEM, EDX and elemental analyses.     

Theoretical studies of the band structure and optoelectronic properties of ZnOxS1−x

In the present article, we have revisited the electronic band gap nature of ZnO_xS_1?x (0 ≤ x ≤ 1) with the recently developed modified Becke and Johnson exchange potential and the calculated band gaps are found consistent with the experimental results. We expect that the band gap bowing parameter obtained in the present work will be close to the experimental one. As the optical properties of ZnO_xS_1?x (0 ≤ x ≤ 1) are very important, therefore different optical parameters like dielectric functions, refractive index and reflectivity are also calculated. The results are illustrated in terms of band structures, band gap energy as a function of oxygen composition, total and partial density of states. © 2012 Wiley Periodicals, Inc.     

Analysis of light elements in superposed layers by Monte Carlo simulation of EELS spectra

A Monte Carlo code, previously set up to simulate electron energy loss spectra of carbon films on silicon at 100 kV, has been extended to the analysis, at 300 kV, of a Si/SiO₂/Si structure; the final goal is the determination of the oxygen concentration in SiO_x precipitates embedded in a Si matrix. The upgrading of the programme has required the introduction of relativistic kinematics and relativistic corrections to elastic and inelastic cross sections.The Si/SiO₂/Si samples have been prepared by CVD deposition of a 16 nm thick silicon film onto a silicon wafer covered with a 11 nm thick thermal oxide. The thickness of both films has been checked by transmission electron microscopy on cross sections. The EELS experiments have been performed on planar sections, in regions of different thickness; the EELS spectra have been acquired with a parallel 666 Gatan spectrometer, fitted to a Philips CM 30 TEM/STEM, operating at 300 kV. The stoichiometry of the SiO_x can be obtained by the ratioing of the areas under the OK and SiK edges, taking advantage of the possibility given by the Monte Carlo simulation to separate the background electrons from the one suffering the characteristic energy loss. The agreement between experiments and calculations in the case examined is satisfactory, so that the application of this procedure to SiO_x precipitates is promising.     

Round‐robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling

An international round‐robin test (RRT) was performed to investigate a method to determine the interface location and the layer thickness of multilayer films by secondary ion mass spectrometry (SIMS) depth profiling as a preliminary study to develop a new work item proposal in ISO/TC‐201. Two types of reference materials were used in this RRT. A SiGe alloy (Si_52.4Ge_47.6) reference film was used to determine the relative sensitivity factors of Si and Ge. A Si/Ge multilayer reference film was used to determine the relative sputtering rates of the Si and Ge layers. The layer thicknesses were measured from the interfaces determined by a 50 atomic percent definition. Seven laboratories from 5 countries participated in this international RRT. The RRT reference expanded uncertainties for Si and Ge layers in a Si/Ge multilayer with similar thicknesses as the reference film were 0.76 and 1.17 nm, respectively. However, those in a thinner Si/Ge multilayer film were slightly larger at 1.04 and 1.59 nm, respectively. Most of the thickness ratios in the 2 Si/Ge multilayer films were consistent with the RRT reference value within their expanded uncertainties.     

Influence of ionic interfacial layers on electronic properties of Alq3/Si(100) interface

The electronic structures of Alq₃/Si(100), Alq₃/LiBr/Si(100), and Alq₃/KCl/Si(100) systems are presented in this report. Their energy level diagrams were prepared and discussed. The formation of the LiBr and KCl interfacial layers between an Alq₃ film and a Si(100) substrate results in a decrease of the energy barrier at the interface. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq₃ as well as LiBr and KCl layers were vapour evaporated onto n‐type Si(100) crystal. The electron affinity of clean Si(100) surface was 4.0 eV, and the position of the valence band maximum was 0.7 eV below E_F. The energetic distance between the valence band maximum of Si(100) and the highest occupied molecular orbital level were 1.5, 2.6, and 2.2 eV, for the Alq₃/Si(100), Alq₃/LiBr/Si(100), and Alq₃/KCl/Si(100) systems, respectively.     

Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation

Thin silicon nitride (SiN _x ) layers with the stoichiometric N/Si ratio of 1.33 in the maximum of the concentration depth distributions of nitrogen were produced by implanting 10 keV¹⁵N ₂ ⁺ in 100 silicon at room temperature under high vacuum conditions. The depth distribution of the implanted isotope was measured by resonance nuclear reaction analysis (NRA), whereas the layer structure of the implanted region and the geometrical thickness of the layers were characterised by high resolution transmission electron microscopy (TEM). SiN _x layers with a thickness of about 30 nm were determined by NRA. Channeling Rutherford backscattering spectrometry was used to determine the disorder in the silicon substrate. Sharp interfaces of a few nanometers between the highly disordered implanted region and the crystalline structure of the substrate thickness were observed by TEM. The high thermal stability of SiN _x layers with N/Si ratios from under to over stoichiometric could be shown by electron beam rapid thermal annealing (1100 °C for 15 s, ramping up and down 5 °C/s) and NRA.     

Co-templating synthesis of highly dispersed 1D ZnO nanostructures in amorphous SiO2 under hydrothermal condition

One-dimensional (1D) ZnO nanostructures were grown in amorphous SiO₂ matrix by a co-templating method under hydrothermal condition. Using ethylenediamine (EDA) groups grafted mesoporous silica MCM-41 as a co-template, the growth of 1D ZnO nanostructures was oriented by soft EDA groups and confined inside the hard mesochannels of MCM-41. The microstructure and morphology of the 1D-ZnO-nanostructures/SiO₂ composite were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray energy dispersive spectroscopy (EDS). All these results indicate that the 1D ZnO nanostructures were synthesized and highly dispersed in the amorphous SiO₂ matrix. Blue-shifted exciton absorption was observed from the co-templating synthesized sample.     

Characterization of chemical information and morphology for in‐depth oxide layers in decarburized electrical steel with glow discharge sputtering

A combination of scanning electron microscopy, X‐ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy with a sampling method by glow discharge sputtering was successfully employed to characterize the chemical information and microscopic features of oxide layers formed during decarburization annealing of electrical steel in the depth direction at high resolution. The discontinuous surface oxides consisted of SiO₂, (Fe,Mn)SiO₃/(Fe,Mn)₂SiO₄, and FeO. SiO₂ embedded in the (Fe,Mn)₂SiO₄ at the surface may be developed by the preferential nucleation and growth kinetics. The discrete or often relatively spherical oxides of internal oxidation by the energetically favorable surface effect were identified as a mixture of SiO₂ and (Fe,Mn)₂SiO₄ at a depth of ~0.5 µm from the surface. The oxides of networks and small particles at a depth greater than ~1 µm were solely silica, of which the morphologies were possibly caused by the enhanced diffusion of oxygen atoms and Si atoms at grain boundaries or sub‐grain boundaries. The equilibrium and kinetic considerations served by theoretical calculations were introduced to understand the formation and behavior of the observed in‐depth oxidation. Copyright © 2013 John Wiley & Sons, Ltd.     

Electronic distribution of SiO by x-ray spectroscopy

Si Kβ X-ray emission has been comparatively studied in Si, SiO and SiO₂. Taking into account the chemical shift of the inner K level, the position of the valence band of SiO relative to those of SiO₂ and Si has been obtained. The existence of silicon monoxide is confirmed.     

Interfacial properties of thermally oxidized Ta2Si on Si

Many refractory metal silicides have received great attention due to their potential for innovative developments in the silicon‐based microelectronic industry. However, tantalum silicide, Ta₂Si, has remained practically unnoticed since its successful application in silicon carbide technology as a simple route for a high‐k dielectric formation. The thermal oxidation of Ta₂Si produces high‐k dielectric layers, (O? Ta₂Si)‐based on a combination of Ta₂O₅ and SiO₂. In this work, we investigate the interfacial properties of thermally oxidized (850–1050 °C) Ta₂Si on commercial silicon substrates. The implications of diffusion processes in the dielectric properties of an oxidized layer are analyzed. In particular, we observe migration of tantalum pentoxide nanocrystals into the substrate with increasing oxidation temperature. An estimation of the insulator charge and interfacial O? Ta₂Si/Si trap density is also presented. Copyright © 2008 John Wiley & Sons, Ltd.     

Interface characterization of a metal‐oxide‐semiconductor structure by biased X‐ray photoelectron spectroscopy

X‐ray photoelectron spectroscopy (XPS) measurements of a Pt/HfO₂(SiO₂)/Si metal‐oxide‐semiconductor (MOS) structure under a bias voltage applied between the gate metal and the silicon substrate were studied. The binding energy shifts of Pt 4f, Hf 4f, O 1s and Si 2p according to the applied voltage were investigated using the MOS structure. After the influence of measurements on the results was carefully examined under various conditions, the amount of the shifts was analyzed from a viewpoint of band alignment. Based on the experimental results, a new way of interpreting the deviation of the electric properties from the ideal ones in a band diagram was proposed. It was demonstrated that the biased XPS is a very powerful method to understand the origin of the electric properties of MOS. Copyright © 2010 John Wiley & Sons, Ltd.     

Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates

The band alignment and defect states of GaInZnO thin films grown on SiO₂/Si via radio frequency (RF) magnetron sputtering were investigated by using X‐ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo‐electron emission and photo‐induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo‐induced current transient spectroscopy and thermally stimulated exo‐electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field‐effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect. Copyright © 2016 John Wiley & Sons, Ltd.     

Determination of the interface band alignment of Mg2Si/4H-SiC heterojuction for potential photodetector application

The Mg₂Si/4H-SiC heterojunction was prepared by radio frequency (RF) magnetron sputtering technique. The binding energies of Mg 2p, Si 2p, and C 1s core levels and the maxima of valence band were measured by X-ray photoelectron spectroscopy (XPS). Using the optical bandgap of Mg₂Si (0.78 eV) and 4H-SiC (3.25 eV), the band offsets of valence band (VBO) and conduction band (CBO) at Mg₂Si/4H-SiC interface were identified as 1.47 and 1.00 eV, respectively. The band alignment was evaluated to be type-I band alignment. The Mg₂Si/4H-SiC heterojunction could be a promising candidate for the infrared (IR) photodetector.     

Density Functional Investigations of Electronic Structure and Dehydrogenation Reactions of Al‐ and Si‐Substituted Magnesium Hydride

The effect on the hydrogen storage attributes of magnesium hydride (MgH₂) of the substitution of Mg by varying fractions of Al and Si is investigated by an ab initio plane‐wave pseuodopotential method based on density functional theory. Three supercells, namely, 2×2×2, 3×1×1 and 5×1×1 are used for generating configurations with varying amounts (fractions x=0.0625, 0.1, and 0.167) of impurities. The analyses of band structure and density of states (DOS) show that, when a Mg atom is replaced by Al, the band gap vanishes as the extra electron occupies the conduction band minimum. In the case of Si‐substitution, additional states are generated within the band gap of pure MgH₂—significantly reducing the gap in the process. The reduced band gaps cause the Mg? H bond to become more susceptible to dissociation. For all the fractions, the calculated reaction energies for the stepwise removal of H₂ molecules from Al‐ and Si‐substituted MgH₂ are much lower than for H₂ removal from pure MgH₂. The reduced stability is also reflected in the comparatively smaller heats of formation (ΔH_f) of the substituted MgH₂ systems. Si causes greater destabilization of MgH₂ than Al for each x. For fractions x=0.167 of Al, x=0.1, 0.167 of Si (FCC) and x=0.0625, 0.1 of Si (diamond), ΔH_f is much less than that of MgH₂ substituted by a fraction x=0.2 of Ti (Y. Song, Z. X. Guo, R. Yang, Mat. Sc. & Eng. A 2004 , 365, 73). Hence, we suggest the use of Al or Si instead of Ti as an agent for decreasing the dehydrogenation reaction and energy, consequently, the dehydrogenation temperature of MgH₂, thereby improving its potential as a hydrogen storage material.     

Preparation and properties of silylated PTFE/SiO2 organic–inorganic hybrids via sol–gel process

A study on poly(tetrafluoroethylene) (PTFE) reinforced with tetraethoxysilanes (TEOS) derived SiO₂ is described. It included the manufacturing process of SiO₂‐reinforced PTFE and the effects of silylation agent on the properties of the hybrid material, such as porosity, hydrophobic, thermal resistance, dielectric and mechanical properties, and microstructure. PTFE/SiO₂ hybrids of 50 wt % SiO₂ loading were prepared via a sol–gel process and were shaped by a two‐roll milling machine. Trimethylchlorosilane and hexamethydisilazane were used as the silylation agents. Our results showed that the water absorption and dielectric loss of PTFE/SiO₂ hybrid had significantly improved with silylation agent. The silylation process replaced Si? OH with Si? CH₃ on the surface of the TEOS‐derived silica colloidal particle. The existence of trimethylsilyl [? Si(CH₃)₃] on the surface of the modified PTFE/SiO₂ hybrid was confirmed via infrared and solid‐state ²⁹Si magic‐angle spinning nuclear magnetic resonance spectra. Nitrogen‐sorption techniques were used to characterize the modified and unmodified PTFE/SiO₂ hybrids. The microstructure of SiO₂ in the matrix was also evaluated with scanning electron microscopy and transmission electron microscopy. Our results showed that the silylated sol–gel‐derived PTFE/SiO₂ hybrids had exhibited high porosity (53.7%) with nanosize pores (10–40 nm) and nanosize colloidal particles (20–50 nm). This manifests itself as have the ultralow dielectric properties (D_k = 1.9 and D_f = 0.0021), low coefficient of thermal expansion (66.5 ppm/°C), high tensile modulus (141 MPa), excellent thermal resistance (T_d = 612 °C), and an increased hydrophobia (θ = 114°); moreover, the hydrophobic property of the PTFE/SiO₂ hybrid was thermally stable up to 400 °C. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 1789–1807, 2004     

Synthesis, characterization, and photoactivity of Ta2O5-grafted SiO2 nanoparticles

Herein, we discuss the synthesis as well as material and photochemical characterization of nanometer‐sized Ta₂O₅ decorated, in a controlled fashion, on top of 20 nm diameter SiO₂ particles to yield a composite oxide with a tunable band‐gap width. Particular emphasis is paid to control of particle size, and control of the distribution of the overlying oxide. The nanoscale dimension imparts a high surface area and introduces quantum confinement effects that displace the conduction band more negatively and the valence band more positively on the electrochemical scale of potentials. This band shift results in an increase of the number of possible participants in photocatalytic reactions. The band shift is shown to result in an increase in driving force for thermodynamically feasible reactions. By decorating SiO₂ with smaller‐sized Ta₂O₅, the interplay of the Lewis acidity of SiO₂ and the contact area between Ta₂O₅ and SiO₂ is utilized to develop a photocatalyst with higher photoactivity than pure Ta₂O₅.