Formation of copper/gold solid solutions by ion beam mixing

The formation of copper/gold solid solutions due to ion beam mixing was studied by Rutherford backscattering, high-voltage electron microscopy and transmission high-energy electron diffraction. Irradiation of multilayered Cu/Au thin films were performed with Xe⁺ ions or Ar⁺ ions at room temperature to doses ranging from 5×10¹⁵ to 2.5×10¹⁶ ions/cm² and energies from 100 to 300 keV. The ion beam mixing leads to uniformly mixed metal layers. The grain size of mixed layers is pronounced increase. It was found that Cu/Au solid solutions are formed with different composition in dependence on itinial composition and implantation dose. Cu-rich and Au-rich solid solutions are induced by ion beam mixing at an initial composition Cu _x Au_100–x withx70. In addition to these solid solutions, a solid solution of middle composition Cu₆₀...₄₀Au₄₀...₆₀ is formed for an initial composition withx<70. The kinetics of formation of solid solution is discussed as a function of the initial composition and implantation dose. Post-annealing experiments of mixed Cu₅₀Au₅₀ multilayers lead to lattice transformations and provide a superlattice structure CuAuI of the L1₀-type. With this process of ordering is associated the formation of dislocation loops.     

Materials modification at zirconium–silicon interface using swift heavy ions

The reactivity of the Zr/Si interface induced by swift heavy ion beams of Au has been investigated in the present work. Zirconium was evaporated on a clean silicon substrate in ultra high vacuum (UHV) at a pressure of 10^?8 Torr by the electron beam evaporation technique and the final layer was a thin film of Au to avoid oxidation of zirconium. The Zr/Si system was irradiated by 350 MeV Au²⁶⁺ ions at liquid nitrogen temperature at different fluences (0.46×10¹⁴, 1.85×10¹⁴ and 4.62×10¹⁴ ions/cm²). Rutherford back scattering (RBS) spectroscopy using 2 MeV He ions was used to monitor the Zr and Si concentration profiles and interdiffusion at the interfaces. The irradiation at the Zr/Si interface showed mixing. X-ray diffraction measurements confirmed the formation of the ZrSi₂ phase. Thermal spike formation and melting in the tracks was found to be the dominant process at the interfaces.     

Swift heavy ion beam mixing at V/Si interface

Vanadium silicides are of increasing interest because of applications in high temperature superconductivity and in microelectronics as contact materials due to their good electrical conductivity. In the present work ion beam induced mixing at Si/V/Si interface has been investigated using 120 MeV Au ions at 1 × 10¹³ to 1 × 10¹⁴ ions/cm² fluence at room temperature. V/Si interface was characterized by Grazing Incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM) techniques before and after irradiation. It was found that the atomic mixing width increases with ion fluence. GIXRD and RBS investigations confirm the formation of V₆Si₅ silicide phase at the interface at the highest ion irradiation dose.     

Metallophilic Bond‐Induced Quenching of Delayed Fluorescence in Au25@BSA Nanoclusters

The metallophilic bond is a weak interaction between closed‐shell ions and has been widely used a probe for various sensing of toxic chemicals for environmental safety concerns. Here, the interaction between Au nanoclusters (NCs) and metallic ions (mercury (Hg²⁺) and copper (Cu²⁺) ions) is explored using steady‐state and time‐resolved luminescence and transient absorption measurements. For Hg²⁺ ions, the delayed fluorescence (DF) of bovine serum albumin (BSA) protected Au₂₅ (Au₂₅@BSA) NCs is quenched via an effective triplet state electron transfer through the metallophilic bond. However, the Cu²⁺ ions do not alter the DF in Au₂₅@BSA NCs because of the absence of the metallophilic interaction. Furthermore, for Au₈@BSA and Au₁₀@histidine, in which there are no Au⁺ ions on the surface, the fluorescence is not quenched by Hg²⁺ ions. Such a novel triplet electron transfer process through metallophilic bonds are observed and reported for the first time. The reduction of the reverse intersystem crossing is the crucial for Hg²⁺ ion sensing in the fluorescent Au₂₅@BSA NCs.     

An investigation on the variations in properties of Ni+ irradiated ZnO thin films

ZnO thin films, irradiated by 80 MeV Ni⁺ ions, were analysed with the help of different characterization techniques like X-ray diffraction, optical absorption, transmission, photoluminescence (PL), electrical resistivity, photosensitivity (PS) and thermally stimulated current (TSC) measurements. Crystallinity and absorption edge were hardly affected by irradiation. PL spectrum of pristine sample showed a broad peak at 517 nm, whereas irradiated film had two emissions at 517 and 590 nm. Intensity ratio between these two emissions (I₅₁₇/I₅₉₀) decreased with the fluence, and finally at a fluence of 3×10¹³ ions/cm², the emission at 517 nm completely disappeared. Electrical resistivity of the sample irradiated with a fluence of 1×10¹³ ions/cm² drastically increased. However, on increasing the fluence to 3×10¹³ ions/cm², resistivity decreased, probably due the onset of hopping conduction through defects. PS also decreased due to irradiation. TSC measurements on pristine sample could reveal only one defect level at 0.6 eV, due to interstitia1 zinc (Zn_I). But, irradiation at a fluence of 1×10¹² ions/cm², resulted in three different defect levels as per TSC studies. Interestingly, the sample irradiated at a fluence of 3×10¹³ ions/cm² had only one defect level corresponding to a deep donor. The possible origin of these defect levels is also discussed in the paper.     

Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO

1 MeV Cu²⁺ ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 × 10¹⁷ ions/cm² at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at room-temperature and the saturation magnetization of this sample was estimated to be 0.12 μ_B per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu²⁺ (d⁹) state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu¹⁺ (d¹⁰) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800 °C on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu₂O phase.     

Reaction of cyanide ions with copper on Si surfaces and its use for Si cleaning

A Si cleaning method has been developed by use of potassium cyanide (KCN) dissolved in methanol. When silicon dioxide (SiO₂)/Si(1 0 0) specimens with 10¹⁴ atom/cm² order copper (Cu) contaminants are immersed in 0.1 M KCN solutions of methanol at 25 °C, the Cu concentration is reduced to below the detection limit of total X-ray fluorescence spectrometer of ∼3 × 10⁹ atoms/cm². X-ray photoelectron spectra show that the thickness of the SiO₂ layers is unchanged after cleaning with the KCN solutions. 10¹⁴ cm⁻² order Cu contaminants on the Si surface can also be removed below ∼3 × 10⁹ atoms/cm², without causing contamination by potassium ions. UV spectra show that Cu-cyano complex ions are formed in the KCN solutions after the cleaning. The main Cu species in the KCN solutions is ions with the concentration of []:[Cu⁺] = 1:1.6 × 10²³. Even when the KCN solutions are contaminated with 64 ppm Cu²⁺ ions in the solutions, which form ions, the cleaning ability does not decrease, showing that ions are not re-adsorbed. The KCN solutions can also passivate defect states such as Si/SiO₂ interface states, leading to the improvement of characteristics of Si devices.     

Phase formation by ion beam mixing in the Ti/Si multilayer system

The irradiation effect of 350 MeV Au⁺ ions on Ti/Si multilayers has been studied using Rutherford backscattering spectroscopy, X-ray reflectivity (XRR) and grazing incidence X-ray diffraction (GIXRD). Intermixing effects have been studied as a function of fluences of 0.46 × 10¹⁴, 1.82 × 10¹⁴ and 4.62 × 10¹⁴ cm⁻². Rutherford backscattering spectra (RBS) confirm mixing at the interface. X-ray reflectivity patterns show damage at the interfaces with the absence of a continuous fringe pattern at high fluence doses in comparison to the pristine interface. Mixing leads to titanium di-silicide (TiSi₂) phase formation as a shown by grazing incidence X-ray diffraction patterns. The observed intermixing is attributed to energy deposited by the incident ions in the electronic system of the target. Swift heavy ion irradiation induced intermixing increases with fluence.     

Dependence of intermediated noble metals on the optical and electrical properties of ITO/metal/ITO multilayers

Sn doped In₂O₃ (ITO) single layer and a sandwich structure of ITO/metal/ITO (IMI) multilayer films were deposited on a polycarbonate substrate using radio-frequency and direct-current magnetron sputtering process without substrate heating. The intermediated metal films in the IMI structure were Au and Cu films and the thickness of each layer in the IMI films was kept constant at 50 nm/10 nm/40 nm. In this study, the ITO/Au/ITO films show the lowest resistivity of 5.6 × 10⁻⁵ Ω cm.However the films show the lower optical transmission of 71% at 550 nm than that (81%) of as deposited ITO films. The ITO/Cu/ITO films show an optical transmittance of 54% and electrical resistivity of 1.5 × 10⁻⁴ Ω cm. Only the ITO/Au/ITO films showed the diffraction peaks in the XRD pattern. The figure of merit indicated that the ITO/Au/ITO films performed better in a transparent conducting electrode than in ITO single layer films and ITO/Cu/ITO films.     

EDXRF measurements on gold diffusion-doped Bi1.8Pb0.35Sr1.9Ca2.1Cu3Oy

Gold (Au) diffusion in superconducting Bi_1.8Pb_0.35Sr_1.9Ca_2.1Cu₃O_y was investigated over the temperature range 500-800 °C by the energy dispersive X-ray fluorescence (EDXRF) technique. It is found that the Au diffusion coefficient decreases as the diffusion-annealing temperature decreases. The temperature dependences of Au diffusion coefficient in grains and over grain boundaries are described by the relations D₁=6.7×10⁻⁵exp(−1.19 eV/k_BT) and D₂=9.7×10⁻⁴exp(−1.09 eV/k_BT), respectively. The diffusion doping of Bi-2223 by Au causes a significant increase of the lattice parameter c by about 0.19%. For the Au-diffused samples, dc electrical resistivity and transport critical current density measurements indicated the critical transition temperature increased from 100 to 104 K and the critical current density increased from 40 to 125 A cm⁻², in comparison with those of undoped samples. From scanning electron microscope (SEM) and X-ray diffraction (XRD) measurements it is observed that Au doping of the sample also improved the surface morphology and increased the ratio of the high-T_c phase to the low-T_c phase. The possible reasons for the observed improvement in microstructure and superconducting properties of the samples due to Au diffusion are also discussed.     

Ion beam mixing of FeNi3 multilayers

An Fe/Ni multilayer of overall FeNi₃ composition, prepared by Joule effect deposition, has been irradiated with 200 keV krypton ions at a nominal dose of 5×10¹⁵ions/cm² to induce mixing at the interface. Depth profiling AES, RBS, XRD (glancing angle) and CEMS have been used to characterize the samples before and after irradiation and also after subsequent mild annealing. In the final structure, we have recognized the presence of embryos of an ordered FeNi₃ superlattice.     

Ion irradiation induced evolution of nanostructure in a graded multi-trilayer system

Nanostructural modifications in a double-graded Pt/Ni/C multi-trilayer, due to irradiation by an energetic ion-beam, have been analyzed using X-ray reflectivity (XRR), X-ray standing wave (XSW) and cross-sectional transmission electron microscopy (X-TEM) techniques. 2 MeV Au²⁺ ions were rastered on Pt/Ni/C multi-trilayer samples producing a uniformly irradiated area at ion-fluences ranging from 1 × 10¹⁴ ions/cm² to 2 × 10¹⁵ ions/cm². Ion irradiation induced modifications of microstructural parameters, e.g., layer thicknesses and electron densities of individual layers and interface roughnesses have been obtained from XRR analysis. Pt- and Ni-fluorescence yield from the as-deposited sample under the XSW condition show the distinct existence of Pt and Ni layers. The almost indistinguishable Pt- and Ni-fluorescence data over the first order Bragg peak from the sample irradiated at the highest ion-fluence, suggest complete mixing of Pt and Ni. Strong mixing between Pt and Ni in the ion irradiated samples is also corroborated by XRR results. X-TEM studies reveal the individual layer structure in the as-deposited sample. This layer structure is lost in the sample irradiated at the highest ion fluence indicating a complete mixing between Pt and Ni layers and nanoscale grain growth of Pt-Ni alloys. Additionally, formation of Pt-Ni alloy nano-clusters in the C-layers is observed. The results are understood in the light of the positive heat of mixing between Pt and C, and Ni and C and the negative heat of mixing between Pt and Ni. The effect of heat of mixing becomes dominant at high fluence irradiation.     

SHI induced silicide formation and surface morphology at Co/Si system

Ion beam mixing is a useful technique to produce modifications at the surface and interface of the solid material. In the present work, ion beam induced modifications at Co/Si interface using 120 MeV Au-ion irradiation has been studied at ion fluences in the range of 10¹² to 10¹⁴ ions/cm² by secondary ion mass spectroscopy (SIMS) technique and calculated mixing efficiency at the interface. Silicide formation has been discussed on the basis of swift heavy ion (SHI) irradiation induced effects. Surface morphology and roughness of irradiated system with fluence 5 × 10¹³ and 1 × 10¹⁴ ions/cm² is studied by scanning tunneling microscopy (STM). Roughness of the surface shows marks of melting process and confirms the appearance of some pinholes in the reacted Co/Si system. Comparative study was also undertaken on annealed sample at 300 °C and then irradiated at a dose 1 × 10¹⁴ ions/cm².     

Composition dependent structural modification in relaxed Si1−xGex films by 100 MeV Au beam

We report the modification of molecular beam epitaxy grown strain-relaxed single crystalline Si_1−xGe_x layers for x=0.5 and 0.7 as a result of irradiation with 100 MeV Au ions at 80 K. The samples were structurally characterized by Rutherford backscattering spectrometry/channeling, transmission electron microscopy (TEM) and high-resolution X-ray diffraction before and after irradiation with fluences of 5×10¹⁰, 1×10¹¹ and 1×10¹² ions/cm², respectively. No track formation was detected in both the samples from TEM studies and finally, the crystalline to amorphous phase transformation at 1×10¹² ions/cm² was examined to be higher for Si_0.3Ge_0.7 layers compared to Si_0.5Ge_0.5 layers.     

197Au Mössbauer study of a gold-doped YBa2Cu3O7-σ high-temperature superconductor

A high temperature superconductor with the composition YBa₂Cu_2.9Au_0.1O_7– was studied by Mössbauer spectroscopy with the 77 keV gamma rays of¹⁹⁷Au, by X-ray diffraction, and by magnetization measurements. The main component in the Mössbauer spectrum, a quadrupole doublet with an isomer shift of +3.29 mm/s with respect to metallic gold and a quadrupole splitting of 3.61 mm/s, can be attributed to Au³⁺ in a square planar oxygen coordination, as is expected for gold replacing Cu(1). A further, weak doublet becomes dominant upon reduction of the specimen, and has an isomer shift of +3.46 mm/s and a quadrupole splitting of 7.12 mm/s. This component may be Au⁺ or Au³⁺ in an unusual coordination. Only a small fraction of the gold was found to be metallic in both the oxidized and the reduced state.     

Nanoscale ion-beam mixing in Au–Si and Ag–Si eutectic systems

MeV ion induced mixing in the nanoscale regime for Au and Ag nanoislands on silicon substrates has been studied. Au and Ag nanoislands are grown on silicon substrates at room temperature and irradiated with 1.5-MeV Au²⁺ ions at various fluences. Cross-sectional high-resolution transmission electron microscopy and Rutherford backscattering spectrometry (RBS) are used to study the ion-beam mixing in Au/SiO_x/Si and Ag/SiO_x/Si systems. We observe a metastable mixed phase for the Au–Si system at a fluence of 1×10¹⁴ ionscm^-2, while no mixed phase is formed for the Ag–Si system. For both Au–Si and Ag–Si systems, a part of the islands is pushed into the substrate. The mixed phase of the Au–Si system is found to be crystalline in nature. The higher eutectic temperature and lower heat of mixing of the Ag–Si system compared to the Au–Si system could be responsible for the lack of mixing and silicide formation in the Ag–Si system. PACS 61.80.Jh; 61.82.Rx; 68.37.Lp; 64.75.+g; 61.46.+w     

Morphology, luminescence, and electrical resistance response to H2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte

Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1 × 10¹⁷ cm⁻³ and 1 × 10¹⁸ cm⁻³ in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified by electrochemical deposition of gold in a pulsed voltage regime. Photoluminescence and photosensitivity measurements indicate efficient light trapping and porous surface passivation. The photoluminescence and electrical resistivity of the membranes are sensitive to the adsorption of H₂ and CO gas molecules. These properties are also influenced by the deposition of Au nanoparticles inside the pores.     

Modifications of structural,optical and electrical properties of nanocrystalline bismuth sulphide by using swift heavy ions

Modified chemical bath deposited (MCBD) bismuth sulphide (Bi₂S₃) thin films’ structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 °C and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 10¹² ions/cm² fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model.     

Hall Mobility of As‐Grown Cu2O Thin Films Obtained Via Electrodeposition on Patterned Au Substrates

Hall measurement of an electrodeposited Cu₂O film is rendered difficult as the bilayer structure of semiconductor on top of a conductive substrate obviates the measurement. Here, we propose the use of a patterned Au on glass substrate in line/space configuration for the Hall measurement of electrodeposited Cu₂O. A continuous, (111) oriented Cu₂O film was electrodeposited on 8 μm/2 μm Au‐line/space on glass substrate and Hall measurement was performed. The room temperature Hall measurement of the Cu₂O film on the patterned substrate indicates p‐type conduction with a hole concentration of 2.2 × 10¹⁷ cm^?3 and mobility of 4.7 × 10^?3 cm² V^?1 s^?1. Additionally, the temperature dependent resistivity exhibits a negative slope that is characteristic of a semiconductor. Therefore, the measured electrical characteristics can be attributed to the electrodeposited Cu₂O semiconductor film rather than the conductive substrate. This method can be applied for the Hall measurement of any other electrodeposited semiconductor by optimizing the line/space geometry of the conductive substrate.     

Optoelectronic properties of Cu1−xPtxFeO2 (0 ≤ x ≤ 0.05) delafossite for p-type transparent conducting oxide

The samples of Cu_1−xPt_xFeO₂ (0 ≤ x ≤ 0.05) delafossite have been synthesized by solid-state reaction method to investigate their optical and electrical properties. The properties of electrical resistivity and Seebeck coefficient were measured in the high temperature ranging from 300 to 960 K, and the Hall effect and the optical properties were measured at room temperature. The obtained results of Seebeck showed the samples are p-type conductor. The optical properties at room temperature exhibited the samples are transparent visible light material with optical direct gap 3.45 eV. The low electrical resistivity, hole mobility and carrier density at room temperature displayed value ranging from 0.29 to 0.08 Ω cm, 1.8 to 8.6 cm²/V s and 1.56 × 10¹⁸ to 4.04 × 10¹⁹ cm⁻³, respectively. The temperature range for transparent visible light is below 820 K because the direct energy gap contains value above 3.1 eV. Consequently, the Cu_1−xPt_xFeO₂ delafossite enhance performance for materials of p-type transparent conducting oxide (TCO) with low electrical resistivity.