Synthesis and photoluminescence of aligned SiO<Subscript>x</Subscript> nanowire arrays

Aligned SiO_x nanowire arrays standing on a Si substrate were successfully synthesized using a simple method by heating a single-crystalline Si slice covered with SiO₂ nanoparticles at 1000 °C in a flowing Ar atmosphere. The SiO_x nanowire arrays were characterized by scanning electron microscopy and transmission electron microscopy. The SiO_x nanowires become progressively thinner from bottom to top. The formation process of the SiO_x nanowire arrays is closely related to a vapor–solid mechanism. Room-temperature photoluminescence measurements under excitation at 260 nm showed that the SiO_x nanowire arrays had a strong blue–green emission at 500 nm (about 2.5 eV), which may be related to oxygen defects. Received: 29 April 2002 / Accepted: 30 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-551-559-1434, E-mail: gwmeng@mail.issp.ac.cn     

Quantitative measurements of the CH radical in sooting diffusion flames at atmospheric pressure

The potential of Laser Induced Fluorescence detection of the CH radical using C–X (0–0) excitation is investigated in a sooting methane/air diffusion flame at atmospheric pressure. Fluorescence is detected using the very narrow (<0.4 nm) Q-branch of the C–X (0–0) band, which enables the measurement of CH in sooting flames without interference from PAH fluorescence and soot emissions. Absolute concentrations are obtained using Cavity Ring Down Spectroscopy. 1D CH profiles in the sooting zone are recorded using a CCD camera with an excellent signal-to-noise ratio. The C–X (0–0) excitation associated with Q-branch detection is shown to be three times more efficient than the B–X scheme. Received: 4 March 2002 / Revised version: 5 November 2002 / Published online: 5 May 2003 RID="*" ID="*"Corresponding author. Fax: +33-3/2033-6463, E-mail: eric.therssen@univ-lille1.fr     

Large-scale synthesis of crystalline β-SiC nanowires

Large quantities of high-purity crystalline β-SiC nanowires have been synthesized at relatively low temperature via a new simple method, the chemical-vapor-reaction approach, in a home-made graphite reaction cell. A mixture of milled Si and SiC powders and C₃H₆ were employed as the starting materials. The results show that the nanowires with diameters of about 10–35 nm are single crystalline β-SiCwithout any wrapping of amorphous material, and the nanowire axes lie along the 〈111〉 direction. Some unique properties are found in the Raman scattering from the β-SiC nanowires, which are different from previous observations of β-SiC materials. A possible growth mechanism for the β-SiC nanowires is proposed. Received: 27 August 2002 / Accepted: 28 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-29/8491-000, E-mail: zjli-sohu@sohu.com     

Microstructures and dielectric properties of compositionally graded (Ba1-xSrx) TiO3 thin films prepared by pulsed laser deposition

Compositionally graded (Ba_1-xSr_x)TiO₃ (BST) (x:0.0∼0.25) thin films were grown on Pt (111)/TiO₂/SiO₂/Si (100) substrates using layer-by-layer pulsed laser deposition in the temperature range 550–650 °C. Both downgraded (Ba/Sr ratio varying from 100/0 at the bottom surface to 75/25 at the top surface) and upgraded (Ba/Sr ratio varying from 75/25 at the bottom surface to 100/0 at the top surface) BST films were prepared. Their microstructures were systematically studied by X-ray diffractometry and scanning electron microscopy. A grain morphology transition from large ‘rosettes’ (>0.30 μm) to small compact grains (70–110 nm) was observed in the downgraded BST films as the deposition temperature was increased from 550 to 650 °C. No such grain morphology transition was detected in the upgraded BST films. Dielectric measurements with metal electrodes revealed an enhanced dielectric behavior in the downgraded films. This enhancement is mainly attributed to the large compressive stress field built up near the interface between the downgraded film and substrate. Furthermore, the BaTiO₃ layer in the downgraded BST films not only serves as a bottom layer but also as an excellent seeding layer for enhancing the crystallization of the subsequent film layers in the downgraded films. Received: 10 December 2001 / Accepted: 12 March 2002 / Published online: 19 July 2002 RID="*" ID="*"Corresponding author. Fax: 86-25/359-5535, E-mail: xhzhu@public1.ptt.js.cn     

New organic–inorganic hybrid matrices doped with rhodamine 6G as solid-state dye lasers

We report on the laser action of rhodamine 6G (Rh6G) incorporated into new hybrid organic–inorganic monolithic materials. The synthesis of these materials proceeded via the simultaneous sol-gel process of the inorganic part (tetraethoxysilane or tetramethoxysilane) and the free-radical polymerization of an organic monomer part (2-hydroxypropyl methacrylate, 2-hydroxyethyl methacrylate and a 1:1 v/v copolymer of this monomer with methyl methacrylate). The wt. % proportion of the alkoxide was systematically varied in each organic formulation, and the effect of each organic–inorganic composition on the lasing properties of Rh6G was evaluated. The laser samples were transversely pumped and the influence on the laser action of dye concentration, pump wavelength and pump repetition rate was analyzed. Lasing efficiencies of up 26% and good stabilities, with a 90% drop in the initial laser output of up to 12000 pump pulses at 2.5 Hz, were obtained when the samples were pumped at 355 nm with 5.5 mJ/pulse from the third harmonic of a Q-switched Nd:YAG laser. Received: 31 July 2002 / Revised version: 14 October 2002 / Published online: 20 December 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/564-4853, E-mail: ogarcia@ctp.csic.es     

Photoemission study of clean and c(4×2)-2CO-covered Pt (111) using high-harmonic radiation

An extreme ultraviolet (EUV) laser light source based on high-harmonic generation is presented. Coherent radiation in the photon energy range hν=20–120 eV is produced in the conversion media argon, neon and helium. High-harmonic radiation in the energy range 20–50 eV is applied to investigate photoemission spectra of Pt (111) and CO/Pt (111). In the photoemission spectra of the clean surface, new secondary electron emission structures are found which influence the cross section analysis of the CO states. When taking these Pt resonances into consideration, the 4σ and 5σ CO shape resonances are found at photon energies of 37 eV and 28 eV, respectively. Additionally, a resonance at hν=31 eV is also observed for the CO 1π state, in contrast to formerly published experimental data. Experimental and theoretical data suggest that this resonance is not connected to the well-known shape resonances in the σ-channel. Based on theoretical approaches, it is identified as an autoionization resonance. Received: 8 April 2002 / Accepted: 22 May 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +49-251/833-3604, E-mail: kutzner@uni-muenster.de     

Large-scale synthesis of SnO2 nanobelts

Tin dioxide (SnO₂) nanobelts have been successfully synthesized in bulk quantity by a simple and low-cost process based on the thermal evaporation of tin powders at 800 °C. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations reveal that the nanobelts are uniform, with lengths from several-hundred micrometers to a few millimeters, widths of 60 to 250 nm and thicknesses of 10 to 30 nm. X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and selected-area electron diffraction analysis (SAED) indicate that the nanobelts are tetragonal rutile structure of SnO₂. The SnO₂ nanobelts grow via a vapor–solid (VS) process. Received: 3 June 2002 / Accepted: 10 June 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-551/559-1434, E-mail: gwmeng@mail.issp.ac.cn     

Preparation and characterization of a poled nanocrystal and polymer composite PbTiO3/PEKc film for electro-optic applications

Composite thin films of PbTiO₃ nanocrystals and high-transparency PEKc polymer for applications in electro-optical devices were prepared using the spin coating technique. The size of the PbTiO₃ nanocrystals was estimated to be 30–40 nm using a transmission electron microscope. The transmission technique, a simple method for measuring the electro-optic coefficients of poled composite polymer films was developed. The electro-optic coefficient γ₃₃ of poled PbTiO₃/PEKc composite polymer films was measured to be 18.34 pm  V^-1 at 633 nm under room temperature. The index at 633 nm and the dielectric constant at 100 kHz under room temperature were determined to be 1.65248 and 7.32, respectively. The figure of merit F₂=n⁷γ²/ε was estimated to be 1546, showing very good electro-optical properties. Received: 5 February 2002 / Accepted: 12 March 2002 / Published online: 19 July 2002 RID="*" ID="*"Corresponding author. Fax: +852/2788-7791, E-mail: eeytc@cityu.edu.hk     

Preferential regrowth of indium–tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

Effects of thermal treatments on the electrical properties and microstructures of indium–tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800 °C revealed Schottky contact characteristics with a barrier height corresponding to ITO’s work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In₂O₃ (222)//GaN (0001) with an ideal metal–semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In₂O₃ at high temperature. Received: 1 September 2000 / Accepted: 15 November 2000 / Published online: 28 February 2001     

Germania/ormosil hybrid materials derived at low temperature for photonic applications

We report on germania/organically modified silane (ormosil) hybrid materials produced by the sol–gel technique for photonic applications. Acid-catalyzed solutions of γ-glycidoxypropyltrimethoxysilane mixed with germanium isopropoxide have been used as precursors for the hybrid materials. Planar waveguide films with a thickness of about 2 μm have been prepared by a single spin-coating process and low-temperature heat treatment from these high germanium content hybrid materials. Atomic force microscopy, thermal gravimetric analysis, UV–visible spectroscopy, and Fourier-transform infrared spectroscopy have been used to investigate the optical and structural properties of the films. The results have indicated that a dense, low absorption, and high transparency (in the visible range) waveguide film could be achieved at a low temperature. A strong UV-absorption region at short wavelengths ∼200 nm, accompanied by a shoulder peaked at ∼240 nm, has been noticed due to the neutral oxygen monovacancy defects. The propagation mode and loss properties of the planar waveguide films have also been investigated by using a prism-coupling technique. Received: 5 November 2002 / Revised version: 27 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +65-67909081, E-mail: ewxque@ntu.edu.sg     

Dielectric breakdown of rubber materials by femtosecond irradiation

We report the reversible micro-structuring of a synthetic rubber polymer (cis1,4-polybutadiene (PB)) by femtosecond laser illumination. Visco-elastic relaxation of the optically damaged region was observed. The recovery time, typically 10²–10⁴ ms, can be varied by changing the irradiation pulse energy. Multi-shot-induced damage recovers on the much longer scale of 10¹–10² s. It was found that the doping of PB by 4 wt. % of pentazadiene ([4-NO₂]–phenyl–N=N–N(C₃H₇)–N=N–phenyl–[4-NO₂]) reduces the threshold of light-induced photo-modification by 20%. This is explained by photo-induced (homolytic) cleavage of the pentazadiene bonds and formation of gaseous N₂, which facilitates material failure at the irradiated spot. The recovery of optical transmission can be applied to optical memory, optical and micro-mechanical applications. The underlying mechanism of the phenomenon is discussed in terms of anelastic α- and β-relaxation (polymer backbone and chains/coils relaxation, respectively). Received: 11 October 2001 / Accepted: 9 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +81-88/656-7598, E-mail: misawa@eco.tokushima-u.ac.jp     

Growth of completely (110)-oriented Pt film on Si (100) by using MgO as a buffer by pulsed laser deposition

(110)-textured MgO films were grown on Si (100) with etching and without etching by pulsed laser deposition. The deposited MgO films were shown to be droplets-free. The MgO film was used as a buffer layer to further grow Pt film on Si (100). A completely (110)-oriented Pt film was obtained on such a buffer layer and its surface is very smooth with a roughness of about 7.5 nm over 5×5 μm. This can be used as a new oriented Pt electrode on silicon for devices. Received: 23 January 2001 / Accepted: 27 April 2001 / Published online: 27 June 2001     

The synthesis of highly oriented GaN nanowire arrays

Highly oriented GaN nanowire arrays have been achieved by the catalytic reaction of gallium with ammonium. The resulting materials were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM images show that the resulting materials are nanowire arrays with a uniform length of about 10 μm. XRD, EDS, TEM and SAED indicate that the nanowire arrays are single-crystal hexagonal GaN with a wurtzite structure. They have diameters of 10 to 20 nm. Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. E-mail: wwwangjc@sina.com     

On the accurate determination of pressure- induced line shifts in the 2ν<Subscript>3</Subscript> band of H<Subscript>2</Subscript>O at 1320 nm

A simple technique is demonstrated for the accurate determination of pressure-induced line shifts of water in air. High- and low-pressure water samples are simultaneously probed on selected overtone transitions at 1.32 μm using a current-modulated distributed-feedback diode laser and harmonic detection. The resultant profiles yield an average line shift of -293±30 MHz/atm for the 3,3,0 (002)2,2,1 (000)transition at 227251 GHz and -134±7 MHz/atm for the 3,2,1 (002)2,1,2 (000) transition at 227027 GHz. Comparisons are made between first- and second-harmonic detection, and wavelength- and frequency-modulation regimes. The effect of modulation broadening on the returned line shifts is quantified. Received: 12 August 2002 / Revised version: 21 October 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +44-01865/275410, E-mail: gus.hancock@chemistry.ox.ac.uk     

Microstructural properties of bulk nanocrystalline Ag–Ni alloy prepared by hot pressing of mechanically pre-alloyed powders

A bulk nanocrystallined Ag50Ni alloy has been prepared by hot-pressing the mechanically pre-alloyed powders at 620 °C under a normal pressure of 58 MPa in vacuum. The microstructural characteristics of the alloy were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results of the precise determination of the lattice parameters of the phases in the powders and in the alloy by XRD show that, after mechanical alloying for 200 h, the solid solubility of Ag in Ni reaches 4.85±0.21 at %, while that of Ni in Ag reaches 0.84±0.30 at %. After hot pressing, the Ag- and Ni-rich phases in the alloy still show a certain degree of supersaturation, with a solid solubility of 0.45±0.11 at % of Ag in Ni. After further annealing of the alloy at 700 °C for 24 h, the solubility decreases to a value of 0.21±0.11 at % for Ag in Ni and to less than 0.1 at % for Ni in Ag. The grain size of the mechanically alloyed powders was of ca 6 nm. After hot pressing, the grain size of the alloy increased to 40–60 nm and then grew further to 100–110 nm after annealing. The influence of the variation of the grain size and the internal stress on the line breadth of the X-ray diffraction peaks has been evaluated in detail. Finally, the role of the nanocrystalline structure in the fast densification process of the powders is also discussed. Received: 12 September 2001 / Accepted: 18 Febraury 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-24/2389-3624, E-mail: wwt@icpm.syb.ac.cn     

Sub-ps laser microstructuring of soft X-ray Mo/Si multilayer gratings

The sub-picosecond laser microstructuring of multilayer gratings is presented in this paper. A micromachining system operating with a 0.5 ps KrF laser at 248 nm was used to etch grating structures with a groove width of 1–2 μm in Mo/Si and Si/Mo multilayers. Atomic force microscopy, scanning electron microscopy and X-ray reflectivity were used to characterize the microetched patterns. The ω-scans around the 1st Bragg maximum show symmetric satellites up to 3rd order, with positions corresponding to the grating period. The use of sub-picosecond laser pulses minimizes the thermally affected zone and enhances the quality of the etched features. Short pulse laser processing is advantageous for the fabrication of high spatial resolution microstructures required in X-ray optics. Received: 21 May 2002 / Accepted: 19 August 2002 / Published online: 15 January 2003 RID="*" ID="*"Corresponding author. Email: dpapa@iesl.forth.gr     

Efficient generation of blue light by frequency doubling of a Nd:YAG laser operating on 4 F 3/24 I 9/2 transitions

Efficient room-temperature operation of ⁴ F _3/2⁴ I _9/2 transitions in diode-end-pumped Nd:YAG lasers at 946 nm and 938.5 nm is reported. 7.0-W continuous-wave output power at 946 nm and 3.9 W at 938.5 nm have been obtained. An analytical model has been developed for the quasi-three-level laser including the influence of energy-transfer upconversion. Frequency doubling of these transitions in periodically poled KTP generated blue light at 473 nm and 469 nm. Both single-pass extra-cavity as well as intracavity schemes have been investigated. Received: 31 July 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +46-8/750-5430, E-mail: stefan.bjurshagen@acreo.se     

From nitride to carbide: control of zirconium-based hard materials film growth and their characterization

High-quality thin films of ZrC_yN_1-y and the novel tribological material Zr_0.8Al_0.2C_yN_1-y have been grown by pulsed reactive crossed-beam laser ablation using Zr and Zr–Al ablation targets, respectively, and a pulsed gas. The gas mixture provided the carbon and nitrogen for the solid-solution films. Control of the stoichiometry (i.e. y) was determined by the relative partial pressures of the nitrogen- and carbon-containing gases. It was found that optimal control of the film chemistry was achieved by using the least thermally reactive gases. In this manner, it was possible to activate the gas species exclusively by collisions in the gas phase with the ablation-plume particles, thereby decoupling the chemistry from surface processes. The films were characterized for their chemical, crystallographic, optical, and tribological properties. All the films had very low impurity levels and a cubic rock salt crystal structure over the entire investigated temperature range between 100 and 600 °C. Exceedingly high quality epitaxial films could be grown on MgO (001) at 600 °C. Films grown on stainless steel were polycrystalline. The hardness of the films showed a maximum for both sets for stoichiometries predicted by a recent theoretical model for hardness based on band-structure calculations. In addition, all the films had an exceptionally low coefficient of friction versus steel. Received: 22 August 2001 / Accepted: 3 March 2002 / Published online: 19 July 2002     

Generation of 100 μJ pulses at 82.8 nm by frequency tripling of sub-picosecond KrF laser radiation

. Investigations of the efficient generation of powerful coherent radiation at 82.8 nm by frequency tripling of short-pulse KrF laser radiation are presented. Argon gas is selected as nonlinear medium due to the resonantly enhanced 3rd-order susceptibility χ⁽³⁾(-3ω,ω,ω,ω). Pulse energies of 100 μJ at 82.8 nm have been measured for a pump pulse energy of 14 mJ. An upscaling to more than 500 μJ is expected with available more powerful pump lasers. Features of this XUV source and possible applications are discussed. Received: 26 July 2002 / Published online: 15 November 2002 RID="*" ID="*"Corresponding author. Fax: +49-511/7622211, E-mail: reinhardt@iqo.uni-hannover.de     

N+BF<Subscript>2</Subscript> and N+C+BF<Subscript>2</Subscript> high-dose co-implantation in silicon

Nitrogen and boron BF₂, and nitrogen, carbon, and boron BF₂ high-dose (6×10¹⁶–3×10¹⁷ cm^-2) co-implantation were performed at energies of about 21–77 keV. Subsequent high-temperature annealing processes (600, 850, and 1200 °C) lead to the formation of three and two surface layers respectively. The outer layer mainly consists of polycrystalline silicon and some amorphous material and Si₃N₄ inclusions. The inner layer is highly defective crystalline silicon, with some inclusions of Si₃N₄ too. In the N+B-implanted sample the intermediate layer is amorphous. Co-implantation of boron with nitrogen and with nitrogen and carbon prevents the excessive diffusivity of B and leads to a lattice-parameter reduction of 0.7–1.0%. Received: 10 January 2002 / Accepted: 30 May 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/3974895; E-mail: Lucia.Barbadillo@uam.es