Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs,respectively)

Studies of binary chalcogenide alloys have established that the onset of network rigidity is generally delayed by a network self-organization resulting in an intermediate phase with significant deviations from mean-field chemical bonding. In Ge_xSe_1−x, the onset of local chemical bonding rigidity occurs for a mean-field coordination, r_c = 2.4 at x = 0.2, but percolation of stress resulting in network rigidity is delayed until r_c = 2.52. This paper demonstrates that low levels of electrically active defects in gate dielectrics for (i) thin film transistors (TFTs) in liquid crystal displays (LCDs), and (ii) aggressively-scaled metal- oxide-semiconductor field effect transistors (MOSFETs) are derived from similar network self-organizations that occur for a narrow range of dielectric compositions. The dielectrics of this article are non-crystalline (nc-) Si_xN_yH_z alloys in which a chemical self-organization occurs during deposition at 300 °C, and nc-(SiO₂)_x(Si₃N₄)_y(ZrO₂)_z alloys in which it occurs during post-deposition annealing at ∼900 °C. For each of these alloys, the values of x, y and z, are approximately 0.3, 0.4 and 0.3.     

Growth and characterization of lead-free Ba(1−x)CaxTi(1−y)ZryO3 single crystal

A lead-free Ba_(1?x)Ca_xTi_(1?y)Zr_yO₃ (BCZT) single crystal (x=0.08, y=0.26) was grown by the Czochralski (CZ) method in a mixed flux of TiO₂ and ZrO₂. The composition of as-grown BCZT was analyzed by electron probe micro-analysis. The structure, dielectric properties and phase transition were investigated at different temperatures. The X-ray diffraction results confirmed that the structure of the as-grown BCZT crystal was cubic both at 25 °C and 500 °C. The temperature dependence of the dielectric constant and Raman spectra characterization revealed that there was a phase transition from cubic to tetragonal, which happened between 200 K and 250 K. With increasing frequency, the Curie temperature shifted towards high temperature.     

Optical band gap and Raman spectra in some (Bi2O3)x(WO3)y(TeO2)100−x−y and (PbO)x(WO3)y(TeO2)100−x−y glasses

The glasses representing (Bi₂O₃)_x(WO₃)_y(TeO₂)_100?x?y and (PbO)_x(WO₃)_y(TeO₂)_100?x?y systems were prepared. The dilatometric glass-transition temperatures of examined glass samples were found in the region 383–434 °C, the coefficient of thermal expansion varied from 12 to 16 ppm/°C and the density ranged from 6.30₂ to 6.80₈ g/cm³. From the optical transmission measurements of thin glassy bulk samples prepared by a glass blowing, the optical gap values were found in the narrow region 3.21–3.36 eV. For the temperature interval 300–480 K, the values of the temperature coefficient of the optical band gap varied from 3.7 × 10^?4 to 5.24 × 10^?4 eV/K. It is suggested that Raman feature observed at around 350 cm^?1 can be assigned to an overlap of Raman bands attributed to WO₆ corner shared octahedra and to the following three atomic linkages: Bi–O–Te, Pb–O–Te and W–O–Te.     

Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer

This work reports the effect of the presence of a Ni buffer layer on the photoluminescence (PL) of SiC_xN_y nanoparticle films prepared by RF plasma magnetron sputtering process in a reactive N₂ + Ar + H₂ gas mixture. An introduction of a Ni buffer of 80 nm or thicker remarkably improves the PL of the films. Annealing in a temperature range of 400–1100 °C is found to significantly affect the PL intensity. Optimal PL is achievable at 600 °C. X-ray photoelectron and Fourier-transform infrared spectroscopy suggest that the strong PL is directly related to the composition of the SiC_xN_y nanoparticle and the concentration of Si–O, and Si–N bonds. The results are relevant to the development of wide bandgap optoelectronic devices.     

Ion conducting phosphate glassy materials

Fast ion conducting (FIC) phosphate glasses have become very important due to a wide range of applications in solid-state devices. We present an overview on silver based fast ion conducting phosphate glasses. Silver phosphate glasses containing chlorides of some metals viz; Li, Na, Mg, Pb and Cu [Ag₂O–P₂O₅–xMCl_y, where x = 0, 1, 5, 10 and 15 wt% and y = 1 when M = Li or Na and y = 2 when M = Mg, Pb or Cu] have been synthesized by melt quenching technique. Studies on these glassy materials characterized by X-ray diffraction, Fourier transform infrared spectroscopy, differential scanning calorimetric techniques and ion transport measurements are presented. The FT-IR studies support the formation of P–O–M linkages. The values of glass transition temperature (T_g) of the glassy materials containing lithium or sodium chloride have been found to decrease with increasing dopant concentrations indicating expansion of the glassy network. On the other hand, the T_g values increase with increasing magnesium, lead or copper chloride concentrations in silver phosphate glasses. This indicates an increase in cross–link density and enhanced chemical durability of these glassy materials. Ion transport studies suggest that the values of electrical conductivities of the metal chloride doped glassy materials are higher than those of the undoped ones and, at a particular dopant concentration, the following trend is observed.σ (–LiCl) ≥ σ (–NaCl) > σ (–MgCl₂) > σ (–PbCl₂) > σ (–CuCl₂)These results are supported by the experimental results of FT-IR spectral and thermal studies.     

Electrical conductivity and dielectric relaxation in non-crystalline films of tungsten trioxide

Amorphous tungsten trioxide (a-WO₃) thin films were prepared by thermal evaporation technique. The electrical conductivity and dielectric properties of the prepared films have been investigated in the frequency range from 100 Hz to 100 kHz and in the temperature range 293–393 K. In spite of the absence of the dielectric loss peaks, application of the dielectric modulus formulism gives a simple method for evaluating the activation energy of the dielectric relaxation. The frequency dependence of σ(ω) follows the Jonscher’s universal dynamic law with the relation σ(ω) = σ_dc + Aω^s, where s is the frequency exponent. The conductivity in the direct regime, σ_dc, is described by the small polaron model. The electrical conductivity and dielectric properties show that Hunt’s model is well adapted to a-WO₃ films.     

Influence of amorphous buffer layers on the crystallinity of sputter-deposited undoped ZnO films

Undoped ZnO films were deposited by radio frequency (RF) magnetron sputtering on amorphous buffer layers such as SiO_x, SiO_xN_y, and SiN_x prepared by plasma enhanced chemical vapor deposition (PECVD) for dielectric layer in thin film transistor (TFT) application. ZnO was also deposited directly on glass and quartz substrate for comparison. It was found that continuous films were formed in the thickness up to 10 nm on all buffer layers. The crystallinity of ZnO films was improved in the order on quartz>SiO_x >SiO_xN_y>glass>SiN_x according to the investigated intensities of (0 0 2) XRD peaks. The crystallite sizes of ZnO were in the order of SiO_x～glass >SiN_x. Stable XRD parameters of ZnO thin films were obtained to the thickness from 40 to 100 nm grown on SiO_x insulator for TFT application. Investigation of the ZnO thin films by atomic force microscope (AFM) revealed that grain size and roughness obtained on SiN_x were larger than those on SiO_x and glass. Hence, both nucleation and crystallinity of sputtered ZnO thin films remarkably depended on amorphous buffer layers.     

Luminescence of Dy3+-doped GexGa5Se(95−x) glasses

Dysprosium doped Ge_xGa₅Se_(95?x) (x = 15–30) chalcogenide glasses were synthesized in this present work. The Vis–NIR transmission spectra, photoluminescence spectra and lifetime were measured. Glasses (x = 27.5, 29.17 and 30) doped with 0.2 wt% dysprosium ions shows relatively strong emission bands at 1146 and 1343 nm when pumped at 808 nm. The emission lifetime ranged from 440 to 540 μs. The oscillator strengths and intensity parameters Ω_t (t = 2, 4 and 6) were calculated using Judd–Ofelt theory.     

MOCVD and characterization of Hf-silicate thin films using HTB and TEMAS

Hafnium silicate (HfSi_xO_y) films were deposited by metal-organic chemical vapor deposition (MOCVD) using a combination of precursors: hafnium tetra-tert-butoxide [Hf(OC(CH₃)₃)₄, HTB] and tetrakis-ethylmethylamino silane [Si(N(C₂H₅)(CH₃))₄, TEMAS]. The activation energy was independent on the ratio of precursor amounts in the surface reaction regime. The grown films showed Hf-rich characteristics and the impurity concentrations were less than 1 at.% (below detection limits). Hafnium silicate films were amorphous up to 700 °C annealing. Hf/(Hf + Si) composition ratio and dielectric constant (k) of the Hf-silicate films decreased by increasing the growth temperature above 270 °C.     

Effects of modifier additions on the thermal properties,chemical durability,oxidation state and structure of iron phosphate glasses

Modified iron phosphate glasses have been prepared with nominal molar compositions [(1?x)·(0.6P₂O₅–0.4Fe₂O₃)]·xR_ySO₄, where x = 0–0.5 in increments of 0.1 and R = Li, Na, K, Mg, Ca, Ba, or Pb and y = 1 or 2. In most cases the vast majority or all of the sulfate volatalizes and quarternary P₂O₅–Fe₂O₃–FeO–R_yO_z glasses or partially crystalline materials are formed. Here we have characterized the structure, thermal properties, chemical durability and redox state of these materials. Raman spectroscopy indicates that increasing modifier oxide additions result in depolymerization of the phosphate network such that the average value of i, the number of bridging oxygens per –(PO₄)– tetrahedron, and expressed as Qⁱ, decreases. Differences have been observed between the structural effects of different modifier types but these are secondary to the amount of modifier added. Alkali additions have little effect on density; slightly increasing T_g and T_d; increasing α and T_liq; and promoting bulk crystallization at temperatures of 600–700 °C. Additions of divalent cations increase density, α, T_g, T_d, T_liq and promote bulk crystallization at temperatures of 700–800 °C. Overall the addition of divalent cations has a less deleterious effect on glass stability than alkali additions. ⁵⁷Fe Mössbauer spectroscopy confirms that iron is present as Fe²⁺ and Fe³⁺ ions which primarily occupy distorted octahedral sites. This is consistent with accepted structural models for iron phosphate glasses. The iron redox ratio, Fe²⁺/ΣFe, has a value of 0.13–0.29 for the glasses studied. The base glass exhibits a very low aqueous leach rate when measured by Product Consistency Test B, a standard durability test for nuclear waste glasses. The addition of high quantities of alkali oxide (30–40 mol% R₂O) to the base glass increases leach rates, but only to levels comparable with those measured for a commercial soda-lime-silica glass and for a surrogate nuclear waste-loaded borosilicate glass. Divalent cation additions decrease aqueous leach rates and large additions (30–50 mol% RO) provide exceptionally low leach rates that are 2–3 orders of magnitude lower than have been measured for the surrogate waste-loaded borosilicate glass. The P₂O₅–Fe₂O₃–FeO–BaO glasses reported here show particular promise as they are ultra-durable, thermally stable, low-melting glasses with a large glass-forming compositional range.     

Optical phonons and Raman scattering in ternary II–VI spheroidal nanocrystals embedded in a glass matrix

Theoretical and experimental studies of the spatial phonon confinement in ternary CdS_xSe_1−x nanocrystals embedded in a glass matrix formed by the composites (40)SiO₂₋(30)Na₂CO₃–(29)B₂O₃–(1)Al₂O₃ (mol%) + [(2)CdO + (2)S + (2)Se] (wt%) were carried out. From the analysis of the surface phonon modes, the theoretical procedure has allowed the determination of the geometrical characteristics of the nanocrystals. The calculated frequencies were compared with the experimental values obtained from the Raman spectra of CdS_xSe_1−x nanocrystals grown under different thermal treatments. A good correlation between the experimental and calculated CdS-like and CdSe-like surface optical modes was observed. The Raman selection rules and their connection with the nature of the surface optical phonons is discussed in order to use Raman spectroscopy as a probe to determine the composition x and the geometrical shape of the semiconductor nanocrystals.     

Electromechanical and electro-optic properties of xBiScO3–yBiGaO3–(1−x−y)PbTiO3 single crystals

Single crystals in the xBiScO₃–yBiGaO₃–(1−x−y)PbTiO₃ (BS–BG–PT) system were grown by the high temperature solution method using Pb₃O₄ and Bi₂O₃ as the flux. The dielectric permittivity (ε_r) at room temperature for unpoled tetragonal crystals was determined to be 500–600 with dielectric loss tangents less than 0.3%. The Curie temperature was found to be around ∼420–450°C, with a dielectric maximum, exhibiting relaxor behavior. The longitudinal piezoelectric coefficient (d₃₃) was found to be ∼300 pC/N for 〈0 0 1〉 oriented tetragonal crystals with electromechanical coupling factor (k₃₃) of 75%, with a shear mode, d₁₅∼290 pC/N and k₁₅∼45%, lateral mode, d₃₁∼−55 pC/N and k₃₁∼−37%. The remnant polarization (P_r) was 46 μC/cm² with a coercive field (E_c) of 43 kV/cm at 1 Hz and DC field of 60 kV/cm. The linear electro-optic (E-O) coefficients of poled crystals determined using an automated scanning Mach–Zehnder interferometer method at room temperature and wavelength of 632.8 nm were r₃₃=36 and r₁₃=4 pm/V, respectively.     

Enhancement of ferroelectricity in the compositionally graded (Pb,Sr)TiO3 thin films derived by a sol–gel process

The compositionally graded Pb_1−xSr_xTiO₃ (PST) films with a fine compositional gradient from Pb_0.6Sr_0.4TiO₃ to Pb_0.3Sr_0.7TiO₃ were fabricated on LNO-buffered Pt/Ti/SiO₂/Si substrates by a sol–gel deposition method. The graded films crystallized into a pure perovskite structure and exhibited highly (1 0 0) preferred orientation after post-deposition annealing. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency and direct current bias field. Dielectric constant peaks, common to a ferroelectric transition, were not observed in the temperature range of 25–250 °C within which the dielectric constant showed weak temperature dependence. This compositionally graded thin film can result in a dielectric constant more than double and a remanent polarization at least two and a half times larger than conventional PST thin films.     

Structural relaxation and glass transition behavior of novel (Ti33Zr33Hf33)50(Ni50Cu50)40Al10 alloy developed by equiatomic substitution

A series of glass forming alloys (Ti₃₃Zr₃₃Hf₃₃)_100−x−y(Ni₅₀Cu₅₀)_xAl_y (x = 20–70 at.% and y = 0–30 at.%) have been developed by equiatomic substitution of similar elements. Of these alloys (Ti₃₃Zr₃₃Hf₃₃)₅₀(Ni₅₀Cu₅₀)₄₀Al₁₀ was chosen in this study to investigate the structural relaxation and glass transition behavior. The as-quenched (Ti₃₃Zr₃₃Hf₃₃)₅₀(Ni₅₀Cu₅₀)₄₀Al₁₀ alloy was fully amorphous and had a wide supercooled liquid region ΔT = T_x(503 °C) − T_g(433 °C) = 70 °C, where T_g and T_x are the glass transition and crystallization temperatures, respectively. Low temperature pre-heat treatments of the (Ti₃₃Zr₃₃Hf₃₃)₅₀(Ni₅₀Cu₅₀)₄₀Al₁₀ alloy for 10 min at 310 °C, 370 °C and 390 °C caused structural relaxation accompanied by the formation of very fine scale lattice ordering. After these heat treatments, the glass transition became hard to observe in the (Ti₃₃Zr₃₃Hf₃₃)₅₀(Ni₅₀Cu₅₀)₄₀Al₁₀ alloy. Increasing the pre-heat treatment temperatures and holding times caused the glass transition to become more clearly detectable with increasing endothermic heat release.     

Optical and electrical properties of as-prepared and annealed (Se80Te20)100 − xAgx (0 ≤ x ≤ 4) ultra-thin films

Optical and electrical properties of the (Se₈₀Te₂₀)_100 ? xAg_x (0 ≤ x ≤ 4) ultra-thin films have been studied. The ultra-thin films were prepared by thermal evaporation of the bulk samples. Thin films were annealed below glass transition temperature (328 K) and in between glass transition temperature and crystallization temperature (343 K). Thin films annealed at 343 K showed crystallization peaks for Se–Te–Ag phases in the XRD spectra. The transmission and reflection of as-prepared and annealed ultra-thin films were obtained in the 300–1100 nm spectral region. The optical band gap has been calculated from the transmission and reflection data. The refractive index has been calculated by the measured reflection data. It has been found that the optical band gap increases, but the refractive index, extinction coefficient, real and imaginary dielectric constant decrease with increase in Ag content. The optical band gap and refractive index show the variation in their values with increase in the annealing temperature. The extinction coefficient increases with increasing annealing temperature. The surface morphology of ultra-thin films has been determined using a scanning electron microscope (SEM). The measured dc conductivity, under a vacuum of 10^? 5 mbar, showed thermally activated conduction with single activation energy in the measured temperature range (288–358 K) and it followed Meyer–Neldel rule. The dc activation energy decreases with increase in Ag content in pristine and annealed films. The results have been analyzed on the bases of thermal annealing effects in the chalcogenide thin films.     

Broad UHF ferromagnetic resonance of iron rich-aluminum pulsed laser deposited thin films

The magnetic susceptibility of Fe–Al off-normal pulsed laser deposited thin films was measured at ultra high frequencies, UHF. Different Fe_1?x–Al_x films from pure Fe to x = 0.2 Al were prepared. The films were ≈40 nm thick and non-crystalline peaks were detected by the X-ray diffractometry studies. The magnetization of the films remained between 2.0 and 1.8 T for composition less than or equal to 20% Al. A magnetic anisotropy, from H_k ≈ 18 Oe for pure Fe to H_k ≈ 130 Oe for 20% Al was measured. These samples exhibited a well-defined ferromagnetic resonance at frequencies between ≈2.0 GHz and 3.8 GHz depending on composition. The broad resonance peaks had a width, at half maximum, w_h, in the interval from 2.5 GHz to 4.0 GHz depending on Al content. After fitting the magnetic hysteresis loops using a simple distribution of anisotropy values, we used the Landau–Lifshitz–Gilbert equation to fit the UHF magnetic susceptibility. From this last fit we obtained a high damping coefficient value (≈4 times higher than that corresponding to Co or CoFe films), explaining this broad ferromagnetic resonance of these Fe_1?x–Al_x films.     

Bulk glassy (Fe0.474Co0.474Nb0.052)100 − x(B0.8Si0.2)x alloys prepared using commercial raw materials

The alloy compositions have been optimized by modifying the B and Si contents in (Fe_0.474Co_0.474Nb_0.052)_100 ? x(B_0.8Si_0.2)_x alloy system with commercial materials. The thermal stability of the supercooled liquid improves with the increased B and Si contents from x = 22 to 28. The composition of the alloy with x = 26 is close to a eutectic point. By copper mold casting, (Fe_0.474Co_0.474Nb_0.052)_100 ? x(B_0.8Si_0.2)_x bulk glassy alloys with diameters up to 5 mm were synthesized for the composition range of x from 22 to 28. In addition to high glass-forming ability (GFA), the (Fe_0.474Co_0.474Nb_0.052)_100 ? x(B_0.8Si_0.2)_x glassy alloys exhibit good soft magnetic properties as well, i.e., rather high saturation magnetization of 0.84–1.07 T, low coercive field of 1.8–3.2 A/m, high initial permeability of 10100–24100 at 1 kHz under a field of 1 A/m and Curie temperature of 620–730 K.     

Preparation of mixed arsenic/antimony chalcogenide glasses and some optical and thermo-physical properties

The preparation of mixed glasses of As₂S_3−xSe_x (x = 0–3) and (1 − y) · As₂S₃y · Sb₂S₃ (y = 0–1) has been carried out by an in situ pouring technique. X-ray diffraction (XRD) was used to confirm the glassy nature of the materials and monitor devitrification. Visible-IR transmission, photoluminescence, refractive index and micro-Raman were measured as a function of composition. Microhardness (MH) and thermal expansion coefficient (TEC) were also measured. Raman peaks in As₂S₃ and As₂Se₃ were observed around 338 cm⁻¹ and 230 cm⁻¹, respectively in this first composition series in which S was replaced by Se. When As was replaced by Sb, in the case of second composition series, the As₂S₃ related Raman peak became broader and shifted to lower wave number, reflecting some structural change/devitrification. MH increased (1.31–1.50 GPa) with Se and Sb content while the TEC was found to decrease (2.5–1.4 × 10⁻⁵/K). The progressive increase in the content of either Se or Sb in As₂S₃ is anticipated to modify bond lengths and bond angles. The combined effect of these structural modifications would change the local structure of the glass forming a more rigid glass network thereby increasing the hardness and decreasing TEC.     

The effect of fluoride on the Fe2+/Fe3+-redox equilibrium in glass melts in the system Na2O/NaF/CaO/Al2O3/SiO2

Liquids with the base compositions (16 − x/2)Na₂O · xNaF · 10CaO · 74SiO₂ (x = 0, 1, 3, and 4) and (10 − x/2) · Na₂O · xNaF · 10CaO · yAl₂O₃ · (80 − y)SiO₂ (x = 0, 1, 3, 5 and y = 5 and 15) doped with 0.25 mol% Fe₂O₃ were studied by means of square-wave voltammetry in the temperature range from 1000 to 1500 °C. With increasing temperature, the redox equilibria were shifted to the reduced state. Also while increasing the alumina concentration, the Fe²⁺/Fe³⁺-redox equilibrium is shifted to the reduced state. In the soda-lime–silica melt the addition of fluoride shifts the equilibrium to the oxidized state, while in the aluminosilicate melts with 15 mol% Al₂O₃, the equilibrium is shifted to the reduced state. In the aluminosilicate melts with 5 mol% Al₂O₃, the equilibrium was not affected by the fluoride concentration. This is explained by the structure of the respective glass compositions.