Effect of proton irradiation on electrical properties of a-As2S3

This paper reports the effect of proton irradiation on the electrical properties of a-As₂S₃ in the temperature range of 323–418 K and frequency range 0.1–100 kHz. The variation of transport property is studied with proton irradiation dose (1 × 10¹³ ions/cm² and 1 × 10¹⁵ ions/cm²). It has been observed that proton irradiation changes the dc conductivity (σ_dc), dc activation energy (ΔE_dc) and ac conductivity (σ_ac(ω)). The σ_dc and σ_ac(ω) increases with dose of proton irradiation. The value of frequency exponent (s) decreases with the temperature and irradiation dose. These results are explained in terms of change in density of defect states in these glasses.     

ac conductivity in a-Ge–Se–Bi glasses

In the present paper the effect of Bi impurity (low ∼4 at.% and high ∼10 at.%) on the ac conductivity (σ_ac) of a-Ge₂₀Se₈₀ glassy alloy is studied and the experimentally deduced values are fitted with theoretically deduced values by using correlated barrier hopping model (CBH). Frequency dependent ac conductance of the samples over a frequency range of 100–50 kHz has been taken in the temperature range (268–360 K). At frequency 2 kHz and temperature 298 K, the value of ac conductivity (σ_ac) decreases at low concentration of Bi (4 at.%). However, the value of σ_ac increases at higher concentration of Bi (10 at.%). The ac conductivity is proportional to ω^s for undoped and doped samples. The value of frequency exponent (s) decreases as the temperature increases. These results have been explained on the basis of some structural changes at low and high concentration of Bi impurity.     

Transition from a single-ion to a collective diffusion mechanism in alkali borate glasses

Two distinct regions of the dc conductivity and its temperature dependence as a function of the mol fraction of alkali oxides, X, are observed in Na- and Li-borate glasses. At low alkali contents the dc conductivity σ_dc increases only moderately with X. However, at higher alkali contents, log σ_dc increases linearly and the activation enthalpy ΔH of σ_dc × T decreases linearly with log X, i.e. the dc conductivity reveals an effective power-law behavior. The transition between low alkali and high alkali behavior takes place at X ≈ 0.08 for Na-borate and at X ≈ 0.09 for Li-borate glasses. This behavior suggests that the diffusion mechanism changes at these alkali contents. The results are discussed in terms of ion separations and the transition from a single-ion jump to a collective diffusion mechanism. The vanishing of the mixed-alkali peak in Na–Rb borate and alumino-germanate glasses at sodium contents similar to that observed for the change in slope of σ_dc(X) in this work suggests that both phenomena share the same origin.     

Electrical properties of A2.6+xTi1.4−xCd(PO4)3.4−x (A = Li,K; x = 0.0–1.0) phosphate glasses

Electrical properties of A_2.6+xTi_1.4−xCd(PO₄)_3.4−x (A = Li, K; x = 0.0–1.0) phosphate glasses are investigated over a frequency range from 42 Hz to 1 MHz at different temperatures. Impedance spectroscopy is used to separate the bulk conductivity from electrode effect of electrical conductivity data. The bulk dc conductivity is Arrhenius activated, with activation energies and pre-exponential factors following the Meyer–Neldel rule. The real part of ac conductivity shows universal power law feature. The variation of dielectric constant with frequency is attributed to ion diffusion and polarization occurring in the phosphate glasses. The frequency dependent imaginary part of electric modulus M″(ω) plot shows non-Debye feature in conductivity relaxation. The Kohlrausch–Williams–Watts stretched exponential function was used to describe the modulus spectra and the stretching exponent β is found to be temperature independent. Scaling in M″(ω) shows that the electrical relaxation mechanisms are independent of temperature for given composition at different temperatures.     

Temperature dependency of impedance spectroscopy behaviors in side-chain liquid crystalline polymer

In this paper, the electrical properties of side-chain liquid crystalline polymer (SLCP) are investigated by impedance spectroscopy technique. We report the measurement of dielectric and conductivity for SLCP from 1 kHz to 10 MHz within the temperature range from 300 to 370 K. The DC conductivity obeys Arrhenius law and it gives a small deviation at 315 K. The activation energies are equal to 0.20 eV and 0.75 eV for high and low temperatures, respectively. The frequency dependence of conductivity satisfies the power law, σ_AC = Aw^s, with s = 0.50–0.57. The evaluated power law exponent s exhibits nearly linear decreasing behavior with temperature. This suggests that the Correlated Barrier Hopping (CBH) model is the operating mechanism.     

Dielectric low-k composite films based on PMMA,PVC and methylsiloxane-silica: Synthesis,characterization and electrical properties

This report describes the preparation of low-k inorganic–organic hybrid dielectric films, based on a polymethylmethacrylate–polyvinylchloride (PMMA–PVC) blend and a silica powder functionalized on the surface with methylsiloxane groups (m-SiO₂). By dispersing m-SiO₂ into a [(PMMA)_x(PVC)_y] 50/50 (x/y) wt% polymer blend, six [(PMMA)_x(PVC)_y]/(m-SiO₂)_z hybrid inorganic–organic materials were obtained, with z ranging from 0 to 38.3 wt% and x = y = (100 − z)/2. The transparent, homogeneous, crack-free films were obtained by a solvent casting process from a THF solution. The morphology, thermal stability and transitions of hybrid materials were studied by environmental scanning electron microscopy (ESEM), thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). ESEM revealed that hybrid dielectric films are very homogeneous materials. The electrical response of the dielectric films was studied by detailed broadband dielectric spectroscopy (BDS). BDS measurements were performed at frequencies of 40 Hz to 10 MHz and a temperature range of 0–130°C. In these temperature and frequency ranges the proposed materials have a dielectric constant of <3.5 and a tan δ of <0.05. BDS also revealed molecular relaxation events in [(PMMA)_x(PVC)_y]/(m-SiO₂)_z materials as a function of temperature and sample composition. Results showed that these films with z in the range 25–35 wt% are very promising low-k dielectrics for applications in organic thin film transistor (OTFT) devices.     

Exploration on nano-composite fumed silica-based composite polymer electrolytes with doping of ionic liquid

Fumed silica (SiO₂)-based composite polymer electrolytes were prepared by means of solution casing technique. Horizontal attenuated total reflectance-Fourier Transform Infrared (HATR-FTIR) study shows the complexation between polymer matrix and SiO₂. The highest ionic conductivity of (4.11 ± 0.01) × 10^? 3 Scm^? 1 is achieved upon inclusion of 8 wt.% of SiO₂. Three different regions have been observed in the frequency dependence–ionic conductivity study. The conductivity rises sharply with frequency at low frequency regime. It is followed by a frequency independent plateau region and sharp decrease in the conductivity at high frequency range. The dielectric permittivity (ε^') and dielectric loss (ε^") are decreased with increasing the frequency. This phenomenon is mainly attributed to the electrode polarization effect. The formation of electrical double layer has been proven in these dielectric permittivity studies. This indicates the non-Debye properties of the nano-composite polymer electrolytes.     

Effect of isothermal annealing and visible-light illumination on the AC-impedance behavior of undoped selenium thin films

The effect of post-deposition isothermal annealing (30 °C ? T_A ? 70 °C) and visible-light illumination on the complex AC-impedance of undoped selenium thin films deposited at the substrate temperatures T_S = 30, 50, 70 °C has been studied in the frequency range 0.2–12 kHz. The AC-impedance of amorphous selenium (a-Se) films (T_S, T_A < 50 °C) was mainly capacitive, with no loss peaks being observed in their Z″(ω)–ω curves, irrespective of illumination. This behavior was ascribed to a dominant charge-carrier trapping effect of bulk/surface charged defects usually present in a-Se. On the other hand, the measured Z″(ω)–Z′(ω) diagrams of illuminated polycrystalline Se samples (50 °C ? T_S, T_A ? 70 °C) exhibited almost full semicircles, whereas their Z″(ω)–ω curves revealed prominent loss peaks at well-defined frequencies. As the annealing temperature or light intensity is increased the loci of the points determined by intersections of these semicircles with the Z′-axis at the low-frequency side shift greatly towards the origin, while the loss-peak positions shift to higher frequencies. These experimental findings were explained in terms of a significant increase in electrical conductivity of selenium films due to thermally-induced crystallization at temperatures beyond glass-transformation region of undoped selenium and to creation of electron–hole pairs by visible-light illumination.     

InOx semiconductor films deposited on glass substrates for transparent electronics

Transparent undoped semiconductor indium oxide films were deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) of indium at low substrate temperature. It was experimentally verified that the variation of rf power density has a strong influence on the electrical and structural properties of the films. The thickness of the InO_x films is of about 100 nm. Results show that InO_x films show an average visible transmittance of about 85% and energy gap of about 2.6 eV. Structural and electrical conductivity measurements show that films are polycrystalline and there exists a linear variation of conductivity logarithm vs reciprocal of temperature. Electrical conductivity variation of 17.6 to 5.8 × 10⁻³ (Ω cm)⁻¹ for films produced at rf power densities ranging from 3.9 to 78.1 mW cm⁻³ was obtained. This controllable semiconductor behavior can therefore satisfy the requirement of a particular application for these type of films.     

Electrical properties of a-Se85−xTe15Snx thin films

Se–Te alloys are an important system of chalcogenide glasses from application point of view. The incorporation of Sn additive alters the electrical properties of these alloys. The conductivity measurements have been done on the thin films of a-Se_85−xTe₁₅Sn_x (x = 0, 2, 4, 6 and 10 at.%) deposited using vacuum evaporation technique. Both dark (σ_d) and photoconductivity (σ_ph) show a maximum for x = 6 at.% of Sn, which, decreases on further Sn addition to the binary Se–Te alloy. The dark activation energy (ΔE_d) shows a minimum for x = 2 at.% of Sn, but increases on further Sn addition. There is a sharp decrease in photosensitivity (σ_ph/σ_d) on Sn addition to Se₈₅Te₁₅ alloy. The charge carrier concentration (n_σ) calculated with the help of dc conductivity measurements also show a maximum at x = 6 at.% of Sn. The results are explained on the basis of increase in the density of localized states present in the mobility gap on Sn incorporation.     

Conductivity percolation transition of Agx(Ge0.25Se0.75)100−x glasses

The ionic conductivity of several chalcogenide glasses increases abruptly with mobile ion addition from values typical of insulating materials (10⁻¹⁶–10⁻¹⁴ Ω⁻¹ cm⁻¹) to values of fast ionic conductors (10⁻⁷–10⁻¹ Ω⁻¹ cm⁻¹). This change is produced in a limited concentration range pointing to a percolation process. In a previous work [M. Kawasaki, J. Kawamura, Y. Nakamura, M. Aniya, Solid State Ionics 123 (1999) 259] the transition from semiconductor to fast ionic conductor of Ag_x(Ge_0.25Se_0.75)_100−x glasses was detected at x¹ ≅ 10 at.% in the form of a steep change in the conductivity. Ag_x(Ge_0.25Se_0.75)_100−x glasses with x ⩽ 25 at.%, prepared by a melt quenching method, are investigated by impedance spectroscopy in the frequency range 5 Hz–2 MHz at different temperatures, T, from room temperature to 363 K and by DC measurements at room temperature. The conductivity of the glasses, σ, was obtained as a function of silver concentration and temperature. For x ⩾ 10 at.% our results are in agreement with those reported by Kawasaki et al. [M. Kawasaki, J. Kawamura, Y. Nakamura, M. Aniya, Solid State Ionics 123 (1999) 259]. The percolation transition was observed in the range 7 ⩽ x ⩽ 8. The temperature dependence of the ionic conductivity follows an Arrhenius type equation σ = (σ_o/T) · exp(−E_σ/kT). The activation energy of the ionic conductivity, E_σ, and the pre-exponential term, σ_o, are calculated. The results are discussed in connection with other chalcogenide and chalcohalide systems and linked with the glass structures.     

Thermal and electric transport properties of (60−x)V2O5–xAs2O3–20Fe2O3–10CaO–10Li2O unconventional glassy system

This paper presents the results of kinematical studies of glass transition and crystallization in the unconventional glassy system (60?x)V₂O₅–xAs₂O₃–20Fe₂O₃–10CaO–10Li₂O (x = 0, 10, 20, 30, 40 mol%) using differential scanning calorimetry (DSC). The glass transition temperatures (T_g), the onset crystallization temperatures (T_c), and the peak temperatures of crystallization (T_p) were found to be dependent on the compositions and the heating rates. From the dependence on heating rates of (T_g) and (T_p) the activation energy for glass transition (E_g) and the activation energy for crystallization (E_c) are calculated. The thermal stability of (60?x)V₂O₅–xAs₂O₃–20Fe₂O₃–10CaO–10Li₂O was evaluated in term of, criteria ΔT = T_c ? T_g. All the results confirm that the thermal stability increase with increasing As₂O₃ contents. From the electric–dielectric measurements it was found that, σ_dc, σ_ac(ω) and θ_D/2 decrease with increasing As₂O₃ contents. It is also observed that the dielectric constant (ε₁(ω)) and the loss factor (tan δ) decrease with increasing As₂O₃ contents in this glass system.     

Polarons in boron doped iron phosphate glasses

The electrical conductivity and dielectric properties of xB₂O₃–(40 ? x)Fe₂O₃–60P₂O₅ (x = 6–20, mol%) glasses were investigated in the frequency range from 0.01 Hz to 1 MHz and the temperature range from 303 K to 523 K. At temperatures below 523 K an ac conductivity and the dielectric constant follow the universal dielectric response (UDR), being typical for hopping or tunneling of localized charge carriers. A detailed analysis of the temperature dependence of the UDR parameter s in terms of the theoretical model for tunneling of small polarons revealed that below 523 K this mechanism governs the charge transport in these glasses. The comparison of the values of characteristic coefficients W_∞ and α determined by two different methods confirms the polaronic behavior of boron doped iron phosphate glasses.     

Dielectric properties of bis(2,4 pentanedionato)copper(II) crystalline films grown on Si substrate for low-k applications

Bis(acetylacetonato)copper(II) thin films were prepared by sublimation at about 245 °C in vacuum on p-Si and glass substrates for dielectric and optical investigations. They were characterized by the X-ray diffraction (XRD) and energy-dispersion X-ray fluorescence (EDXRF) methods. The XRD pattern reveals that the prepared films were polycrystalline of monoclinic P2₁/n structure. The optical absorption spectrum of the prepared film was not identical to that of the molecular one, which identified by a strong absorption peak at 635 nm. The onset energy of the optical absorption of the complex was calculated by using Hamberg et al. method, which is usually used for common solid-state semiconductors and insulators. The dielectric properties for the complex as insulator were investigated on samples made in form of a metal-insulator-semiconductor (MIS) structure. The dielectric properties were studied in frequency range 1–1000 kHz and temperature range 298–333 K. The dielectric relaxation was analyzed in-terms of dielectric modulus M¹(ω). Generally, the present study shows that films of the complex grown on Si substrate are a promising candidate for low-k dielectric applications; it displays low-k value around 1.7 ± 0.1 at high frequencies.     

Electrical properties of annealed a-SiC:H thin films

In the present work the dependence of electrical properties of a-SiC:H thin films on annealing temperature, T_a, has been extensively studied. From the measurements of dark dc electrical conductivity, σ_D, in the high temperature range (from 283 up to 493 K), was found that the conductivity activation energy, E_a, is invariant for T_a ⩽ 673 K and equal to 0.64 eV, whereas for T_a from 673 up to 873 K, E_a increases at about 0.2 eV reaching to a maximum value 0.85 eV at T_a = 873 K, suggesting the optimum material quality. This behavior of E_a as a function of T_a is mainly attributed to relaxation of the strain in the amorphous network, which is possibly combined with weak hydrogen emission for temperatures up to 873 K. For further increase of T_a (>873 K) the phenomenon of hydrogen emission, causes rapid decrease of E_a down to 0.24 eV at T_a = 998 K, deteriorating the material quality. These results are also supported by the measurements of dark dc electrical conductivity in the low temperature range (from 133 up to 283 K), where the dependence of the density of gap states at the Fermi level, N(E_F), on annealing temperature presents the minimum value at T_a = 873 K. The Meyer–Nelder rule was found to hold for the a-SiC:H thin films for annealing temperatures up to 873 K. Finally, the dependence of dark dc electrical conductivity at room temperature, σ_DRT, on T_a showed to reflect directly the dependence of E_a on T_a.     

Electrical characterizations of silver chalcogenide glasses

We present a study of the electrical properties of silver chalcogenide glasses ‘40AgI’–30Ag₂S–30GeS₂, 45AgI–27.5Ag₂S–27.5GeS₂ and 50AgI–25Ag₂S–25GeS₂ in the 77–400 K temperature and the 20 Hz to 1 MHz frequency ranges. In our temperature range, a large variation of the real permittivity is observed, in relation with an electrodes polarization effect. As the amount of silver iodide increases in the Ag₂S–GeS₂ matrix, the glass transition temperature and the activation energies decrease, the electrical conductivity increases and reaches 4 Ω⁻¹ m⁻¹ at room temperature for the glass with 50% AgI. The study of the conductivity shows a behavior due to a high ionic conductivity, thermally activated with E_dc = 0.21 eV, E₁ = 0.075 eV (40AgI–30Ag₂S–30GeS₂, 45AgI–27.5Ag₂S–27.5GeS₂), E_dc = 0.17 eV, E₁ = 0.055 eV for 50AgI–25Ag₂S–25GeS₂. For these glasses, we have seen three conductivity regimes. The first two terms are thermally activated. The third term cannot be actually clearly identified because either it is thermally activated with a very low activation energy and frequency dependent, or it is almost non-thermally activated and frequency dependent.     

Experimental confirmation of oscillating properties of the complex conductivity: Dielectric study of polymerization/vitrification reaction

Clear evidence of the existence of fractional kinetics containing the complex power-law exponents were obtained by conductivity measurements of polymerization reaction of polyvinylpyrrolidone (PVP) performed inside a dielectric cell. We established the relationship between the Fourier image R(jω) of the complex memory function K(t) and the time-dependent mean square displacement 〈r²(t)〉. This relationship helps to understand the origin of the different power-law exponents appearing in the real part of complex conductivity Re[σ(ω)] and find a physical/geometrical meaning of the power-law exponents that can form the complex-conjugated values. The complex-conjugated values of the power-law exponents leading to oscillating behavior of conductivity follows from the fractional kinetics suggested by one of the authors (R.R.N.). The relationships [R(jω)⇔Re[σ(ω)]⇔〈r²(t)〉] are becoming very efficient in classification of different types of collective motions belonging to light and heavy carriers involved in the relaxation/transfer process. The conductivity data obtained for Re[σ(ω)] during the whole polymerization process of the PVP at different temperatures (80, 90, 100 °C) are very well described by the fitting function that follows from the suggested theory. Original fitting procedure based on the application of the eigen-coordinates (ECs) method helps to provide a reliable fitting procedure in two stages and use the well-developed and statistically stable linear least square method (LLSM) for obtaining the correct values of the fitting parameters that describe the behavior of Re[σ(ω, T_r)] in the available frequency range for the current time of the chemical reaction T_r measured during the whole process of polymerization. The suggested theory gives a unique possibility to classify the basic types of motions that take place during the whole polymerization process.     

Novel feature of the universal power law dispersion of the ac conductivity in disordered matter

The ac conductivity σ_ac of different types of materials as a function of angular frequency ω is approximated by a ‘universal’ power law σ_ac = Aωⁿ, A and n are fitting parameters .The exponent and the pre-exponential factor depend on temperature, in general. In the present Letter, we suggest an empirical law that states that the temperature evolution of log A is proportional to the temperature evolution of n. Data reported on different materials ascertain that the ratio −log A/n is constant, regardless the nature of the material and the type of conductivity.     

Effect of Cu additive on the electrical properties of Ge–Se alloy

Electrical measurements have been carried out on a-(Ge₂₀Se₈₀)_100−xCu_x (x = 0.0, 0.5, 1.0, 1.5 and 2.0 at.%) thin films. The dark conductivity (σ_d) and photoconductivity (σ_ph) measurements are done in the temperature range 252–349 K. The values of σ_d, σ_ph increase and dark activation energy (ΔE_d), photo activation energy (ΔE_ph) decrease as the concentration of Cu additive increases (up to 1.0 at.%). Photosensitivity (σ_ph/σ_d) increases and decay time constant (τ_d) decreases as the concentration of Cu increases (up to 1.0 at.%). The charge carrier concentration (n_σ) increases with Cu incorporation (up to 1.0 at.%). A reverse in the trend takes place in all these parameters as the Cu concentration is further increased (>1.0 at.%). These results are explained on the basis of change in the density of defect states present in the mobility gap of Ge–Se–Cu alloy.