X-ray diffraction measurements for liquid Ge–Si alloys using synchrotron radiation

Energy dispersive X-ray diffraction measurements have been carried out for liquid Ge_1−xSi_x alloys (x = 0.0, 0.3, 0.5, 1.0) using synchrotron radiation at SPring-8. We measured the X-ray diffraction spectra of liquid Ge and Si up to a high temperature range, (liquid Ge from 1270 to1870 K and liquid Si from 1680 to 2020 K), liquid Ge_0.7Si_0.3 at 1620 K, and liquid Ge_0.5Si_0.5 at 1540, 1590, 1670 and 1720 K. The total structure factors of the liquid Ge–Si alloys have a characteristic shoulder on the high-wave-vector side of the first peak. We deduced a pair distribution function from the Fourier transform of the observed structure factor, which was weakly dependent on the temperature. The nearest-neighbor coordination number of liquid Ge–Si alloys is close to that of pure liquid Ge and Si. The first peak of the pair distribution function moved to a shorter distance with increasing Si concentration. These results may indicate that the atomic radii of the Si and Ge atoms in the pure liquid are preserved in the liquid alloys.     

Tracer diffusion of 22Na and 45Ca,ionic conduction and viscosity of two standard soda-lime glasses and their undercooled melts

The tracer diffusivities of ⁴⁵Ca in two different high purity standard soda-lime silica glasses have been measured by the radiotracer method below and above their calorimetric glass transition temperatures. Calorimetric glass transition temperatures (T_g) of 845 K and 867 K have been obtained for standard glasses I and II, respectively, using differential scanning calorimetry (DSC) at a heating rate of 20 K/min. In this paper, we focus on the results of ⁴⁵Ca diffusion and conductivity of the two standard soda-lime glasses and compare them with ²²Na diffusivities also obtained in our laboratory [E.M. Tanguep Njiokep, H. Mehrer, Solid State Ionics 177 (2006) 2839, E.M. Tanguep Njiokep, H. Mehrer, Defect Diffus Forum 237–240 (2005) 282]. The ⁴⁵Ca diffusion coefficients obtained are found to follow the Arrhenius law, both below (Tanguep Njiokep and Mehrer, 2006, 2005) and above T_g. In the Arrhenius diagram a change of slope of the ⁴⁵Ca diffusivities appears at 835 K for standard glass I and at 790 K for standard glass II. At the same time, the ionic conductivities display a change in slope at 790 K and 778 K for standard glasses I and II, respectively. These temperatures are somewhat smaller than the calorimetric glass transition temperatures obtained at a heating rate of 20 K/min. Rather, they appear to be close to values of T_g obtained by extrapolation to a vanishing heating rate (Tanguep Njiokep and Mehrer, 2006). The viscosity diffusion of standard glass I is considerably smaller than the conductivity diffusion coefficient and both tracer diffusivities. In both glasses the ionic conductivity is essentially due to the motion of Na ions. The contribution of Ca ions to the conductivity is negligible.     

Preparation and characterization of telluride glasses

Chalcogenide bulk glasses Ge₂₀Se_80?xTe_x for x ∈ (0, 10) have been prepared by systematic replacement of Se by Te. Selected glasses have been doped with Er and Pr, and all systems have been characterized by transmission spectroscopy, measurements of dc electrical conductivity and low-temperature photoluminescence. Absorption coefficient has been derived from measured transmittance and estimated reflectance. Both absorption and low-temperature photoluminescence spectra reveal shifts of absorption edge and/or dominant luminescence band to longer wavelength due to Te → Se substitution. Arrhenius plots of dc electrical conductivity, in the temperature range 300–450 K, are characterized by activation energies roughly equal to the half of the optical gap. Arrhenius plots for temperatures below 300 K yield much lower activation energies. The dominant low-temperature luminescence band centered at about half the band gap energy starts to quench above 200 K and a new band appears at 900 nm. The band at 900 nm, due to band to band transitions, overwhelms the spectra at room temperature. Systems doped with Er exhibit a strong luminescence due to ⁴I_13/2 → I_15/2 transition of Er³⁺ ion at 1539 nm, and Pr doped samples exhibit a relatively weak luminescence peak at 1590 nm, which we tentatively assign to ³F₃ → ³H₄ transition of Pr³⁺ ion.     

High frequency dynamics of liquid bismuth

The dynamic structure factor S(Q, ω) of liquid Bi was measured at 580 K in the Q range from 0.15 to 0.6 Å⁻¹ using inelastic neutron scattering. The obtained spectra clearly demonstrate the existence of well defined longitudinal propagating modes. A positive dispersion is found in the low Q region, where the mode velocity undergoes a transition between the hydrodynamic value and a high frequency value 20% larger. The damping of the excitations does not follow the hydrodynamic Q² trend and is stronger than in any metallic liquid investigated so far. The quasielastic lineshape contains a broad Q-independent Lorentzian contribution, other than a small sharp peak, which has yet been observed in liquid Hg and Ga.     

Experimental evidence against the existence of an ideal glass transition

The absolute liquid heat capacity of poly(α-methyl styrene) was determined at temperatures far below T_g and T_K in previous work by use of pentamer/polymer athermal mixtures. Here the data is compared to data compiled by Wunderlich and coworkers from 0 K to above T_g in order to obtain the absolute entropy for the polymer in its equilibrium state at temperatures as much as 180 K below the glass temperature or 130 K below the Kauzmann temperature. The results provide no evidence of a second-order transition or of a smeared transition in the entropy. In addition, we find no evidence that the entropy would become negative at a finite temperature.     

Temperature dependence of the photoinduced fatigue-recovery phenomena of photoluminescence under prolonged irradiation in GeS2 chalcogenide glass

We report the time-dependent intensities for the photoluminescence (PL) at various temperatures (10 K ? T ? 300 K) in amorphous GeS₂, which is known to exhibit not only PL fatigue but also PL recovery behavior. A difference in reversibility in fatigue-recovery process was found between room temperature (RT) and those at 110 K or below. Another small band of PL was also observed at 10 K or less, which also showed a time-dependence in intensity. A functional form to describe the time dependence was adopted based on a simplified model which have been obtained in a previous study and extended to describe the fatigue-recovery behaviors for all temperature range which have measured below RT.     

Precise sound velocity measurement for liquid Se50Te50 under high pressure

We have measured the sound velocity in liquid Se₅₀Te₅₀ at 19.5, 32.6, 45.6, and 58.2 MHz simultaneously by means of an ultrasonic pulse transmission/echo method. By using a phase-sensitive-detection technique the relative error was reduced to less than 0.1%. The temperature dependence of sound velocity at 100 MPa exhibits a minimum at 600 ^oC and a maximum at 1035 ^oC, which are related to the large structural change accompanied by the semiconductor–metal (S–M) transition. In addition, sound dispersion has been observed at temperatures from 500 °C to 900 °C for the first time, where anomalous sound attenuation was previously reported. This result implies that a structural relaxation on nanosecond timescale takes place in the S–M transition region.     

Electrical properties of annealed a-SiC:H thin films

In the present work the dependence of electrical properties of a-SiC:H thin films on annealing temperature, T_a, has been extensively studied. From the measurements of dark dc electrical conductivity, σ_D, in the high temperature range (from 283 up to 493 K), was found that the conductivity activation energy, E_a, is invariant for T_a ⩽ 673 K and equal to 0.64 eV, whereas for T_a from 673 up to 873 K, E_a increases at about 0.2 eV reaching to a maximum value 0.85 eV at T_a = 873 K, suggesting the optimum material quality. This behavior of E_a as a function of T_a is mainly attributed to relaxation of the strain in the amorphous network, which is possibly combined with weak hydrogen emission for temperatures up to 873 K. For further increase of T_a (>873 K) the phenomenon of hydrogen emission, causes rapid decrease of E_a down to 0.24 eV at T_a = 998 K, deteriorating the material quality. These results are also supported by the measurements of dark dc electrical conductivity in the low temperature range (from 133 up to 283 K), where the dependence of the density of gap states at the Fermi level, N(E_F), on annealing temperature presents the minimum value at T_a = 873 K. The Meyer–Nelder rule was found to hold for the a-SiC:H thin films for annealing temperatures up to 873 K. Finally, the dependence of dark dc electrical conductivity at room temperature, σ_DRT, on T_a showed to reflect directly the dependence of E_a on T_a.     

Synthesis and characterizations of phthaloyl chitosan-based polymer electrolytes

Phthaloyl chitosan (PhCh) has been synthesized by reacting excess phthalic anhydride with chitosan in the presence of nitrogen gas (N₂). Confirmation of phthaloyl chitosan structure by Fourier-transform infrared (FTIR) spectroscopy shows bands at 1773 and 1713 cm^? 1 attributable to the pthalimido group. From X-ray diffraction (XRD), the samples are largely amorphous. Thermal stability of chitosan is increased on phthaloylation. Ammonium thiocyanate (NH₄SCN) salt has been added to the solution of phthaloyl chitosan in N,N-dimethylformamide (DMF) before casting to form films. The amount of NH₄SCN salt added ranges from 5 to 50 wt. % concentration. The highest conductivity at 298 K is (2.42 ± 0.01) × 10^? 5 S cm^? 1 for the sample 70 wt. % PhCh-30 wt. % NH₄SCN. Impedance of the films has been measured at temperatures between 298 K and 373 K and in the frequency range from 0.1 Hz to 1 × 10⁷ Hz. Relaxation peaks are observed from dielectric loss and tangent delta variation with frequency at ambient and elevated temperatures in the frequency range investigated for the highest conducting sample. Decomposition voltage is ~ 2.07 V and transference number measurements show that charge conduction is mainly by ions.     

Octahedral fluoride glasses: Raman spectra and structure of niobium pentafluoride

Raman spectroscopy is used to characterize the NbF₅ phases in the temperature range 80–500 K. A new clear glass is formed by quenching the melt to liquid nitrogen temperatures having a glass transition at ～206 K and crystallization at ～233 K. For all phases including the melt, the glass, the supercooled liquid, the crystalline solid and the gas, the Raman spectra show a rather common high frequency band at ～760 cm^?1 which is attributed to the Nb–F terminal frequency of partially bridged ‘NbF₆’ octahedra. Based on the systematics of the Raman spectra for all phases and the literature physicochemical data a model is proposed for the glass and the liquid phases where ‘NbF₆’ octahedral bridged in cis and/or trans configurations form a variety of cyclic and/or chain structures which intermix building up the overall structure. At exceptionally low energies (<11 cm^?1) a rather weak in intensity Boson peak is observed in the glass which shifts to even lower energies with increasing temperature. Librational and/or tortional motions of the bridged octahedra participating in the glass structure are possible candidates for the origin of this peak.     

Microdynamics of a monoatomic liquid metal

Modified microscopic theory of the collective dynamics of a simple liquid has been used to explain the recently observed accurate detailed coherent dynamical structure factor S(k, ω) of liquid Na at 390 K as measured by high resolution inelastic X-ray scattering (IXS) in the wave-vector, κ, range 1.5 nm^?1 ? κ ? 14.6 nm^?1. The computed values of detailed spectral lineshape of S(k, ω), the dispersion relation and the velocity of sound are in reasonable agreement with the corresponding experimental results. Variation of longitudinal viscosity with κ has also been reported.     

Electrical properties of liquid 3d transition metal–Si alloys

The electrical resistivity, R, and the thermoelectric power, S, have been measured for liquid transition metal–Si alloys (TM_cSi_1−c, TM = Ni, Fe, Mn), and liquid Cr_0.1Si_0.9 and Co_0.1Si_0.9 alloys as a function of temperature. The electrical resistivity increases rapidly with the addition of Fe, Mn and Cr to liquid Si and the liquid Mn_cSi_1−c alloys with 1 ⩾ c ⩾ 0.6 have an electrical resistivity of approximately 200 μΩ cm. The composition dependence of the electrical resistivity for liquid Fe_cSi_1−c and Ni_cSi_1−c systems exhibits a maximum at the composition c = 0.5 and c = 0.6, respectively. Liquid TM–Si alloys have a negative value of thermoelectric power over the wide composition range. The variation of R and S by the addition of Fe, Co and Ni solutes to liquid Si is in good agreement with that estimated from the 3d resonant scattering theory. The composition dependence of R and S of liquid Ni–Si can be qualitatively explained by the extended Ziman’s formula.     

Tensile properties of ZrCu-based bulk metallic glasses at ambient and cryogenic temperatures

The tensile behaviors of a series of (Zr_47.5Cu_47.5Al₅)_1 ? x(Zr₈₀Nb₂₀)_x (x = 0, 0.05, 0.10, 0.15) bulk metallic glasses were studied at ambient and cryogenic (77 K) temperatures. It is found that the tensile strength of the alloys increases as the temperature decreases from 298 K to 77 K. The maximum enhancement is 15.7%, and the toughness of these alloys does not deteriorate at low temperatures. We demonstrate that the higher energy required to raise the temperature in the shear bands from the cryogenic temperature to glass transition temperature is the origin of the tensile strength enhancement at low temperatures.     

High-resolution inelastic X-ray scattering measurements of an Al72Pd20Mn8 alloy above the melting point

The dynamic structure factor S(Q, ω) of the melt of an icosahedral quasicrystal, Al₇₂Pd₂₀Mn₈, was measured at 1223 K near the melting point, T_m = 1140 K, for momentum transfers, Q, from 1.5 nm⁻¹ to 5.55 nm⁻¹ by means of inelastic X-ray scattering technique using synchrotron radiation at SPring-8. The composition of Al₇₂Pd₂₀Mn₈ is a special one in AlPdMn ternary alloys, since icosahedral AlPdMn quasicrystal is formed directly from the melt. The acoustic mode was observed in the low Q region, and a sound velocity was estimated to be 4170 ± 100 m/s.     

Temperature dependency of impedance spectroscopy behaviors in side-chain liquid crystalline polymer

In this paper, the electrical properties of side-chain liquid crystalline polymer (SLCP) are investigated by impedance spectroscopy technique. We report the measurement of dielectric and conductivity for SLCP from 1 kHz to 10 MHz within the temperature range from 300 to 370 K. The DC conductivity obeys Arrhenius law and it gives a small deviation at 315 K. The activation energies are equal to 0.20 eV and 0.75 eV for high and low temperatures, respectively. The frequency dependence of conductivity satisfies the power law, σ_AC = Aw^s, with s = 0.50–0.57. The evaluated power law exponent s exhibits nearly linear decreasing behavior with temperature. This suggests that the Correlated Barrier Hopping (CBH) model is the operating mechanism.     

Optical and electrical properties of as-prepared and annealed (Se80Te20)100 − xAgx (0 ≤ x ≤ 4) ultra-thin films

Optical and electrical properties of the (Se₈₀Te₂₀)_100 ? xAg_x (0 ≤ x ≤ 4) ultra-thin films have been studied. The ultra-thin films were prepared by thermal evaporation of the bulk samples. Thin films were annealed below glass transition temperature (328 K) and in between glass transition temperature and crystallization temperature (343 K). Thin films annealed at 343 K showed crystallization peaks for Se–Te–Ag phases in the XRD spectra. The transmission and reflection of as-prepared and annealed ultra-thin films were obtained in the 300–1100 nm spectral region. The optical band gap has been calculated from the transmission and reflection data. The refractive index has been calculated by the measured reflection data. It has been found that the optical band gap increases, but the refractive index, extinction coefficient, real and imaginary dielectric constant decrease with increase in Ag content. The optical band gap and refractive index show the variation in their values with increase in the annealing temperature. The extinction coefficient increases with increasing annealing temperature. The surface morphology of ultra-thin films has been determined using a scanning electron microscope (SEM). The measured dc conductivity, under a vacuum of 10^? 5 mbar, showed thermally activated conduction with single activation energy in the measured temperature range (288–358 K) and it followed Meyer–Neldel rule. The dc activation energy decreases with increase in Ag content in pristine and annealed films. The results have been analyzed on the bases of thermal annealing effects in the chalcogenide thin films.     

Structure of molten Al–Si alloys

The temperature variation of the structure and microstructure of molten eutectic Al_1−xSi_x alloys (x = 0.122 and 0.20) have been studied by neutron diffraction and small-angle neutron scattering (SANS), as well as measurements performed on pure liquid Al. All measurements have been performed at five temperatures in a heating–cooling loop. The SANS results unambiguously show that for the eutectic alloy (x = 0.122) the microstructure changes with increasing temperature in a partly reversible way while for the hypereutectic (x = 0.20) alloy the change is almost completely irreversible. This change in microstructure also manifests itself in the shape of the static structure factor S(Q).     

The effect of heat treatment on the paracrystallinity of an opal-CT found in a bentonite

To investigate temperature dependence of paracrystallinity for opal-CT, a bentonite containing approximately 34% by mass opal-CT have been used as material. Since opal-CT can not be separated entirely, the bentonite samples have been heated at different temperatures in the interval from 200 °C to 1300 °C for 2 h, and at 1050 °C for different time intervals changing from 2 h to 24 h. The X-ray diffraction (XRD) patterns of the original and heated samples have been obtained. The increase in the paracrystallinity has been discussed according to the thermal behavior of the relative intensity (I/I₀), relative full width at half-maximum peak height (FWHM/FWHM₀ ≡ W) and d-value of the most characteristics XRD peak for opal-CT between 0.405 nm and 0.410 nm region. The increase in I/I₀ from 1 to 3, and in d(l 0 1) spacing from 0.4050 to 0.4095 and decrease in W from 1 to 0.6 show that there is an increase in paracrystallinity for opal-CT by rising the temperatures between 800 °C and 1300 °C. The increase, of I/I₀ value from 1 to 5 by heating at 1050 °C while time increases from 2 h to 24 h shows that the paracrystallinity of opal-CT increase by time and reaches steady state condition approximately 1300 °C.     

Synthesis and characterization of bulk amorphous Zr65Cu18Ni9Al8 and [Zr0.65Cu0.18Ni0.09Al0.08]98Er2 alloys

Bulk metallic glasses (BMGs), especially Zr-based BMGs, have attracted lot of attention of materials scientists because of their very attractive physical, thermal and mechanical properties and a few unique applications. In the present study, Zr₆₅Cu₁₈Ni₉Al₈ alloy was designed according to the criterion of conduction electron/atom (e/a ratio) ∼1.395 and average atomic size of alloy (R_a) ∼0.1498 nm. Addition of 2 at.% Er was carried out in the base alloy to investigate its effect on thermal and mechanical properties. Characterization of alloys was performed using the techniques of XRD, DSC, and SEM/EDS. Mechanical properties like Vicker’s microhardness, nanohardness, elastic modulus, density and fracture strength were measured. Average shear angle was found to be ∼35 ± 1° for base alloy and about 31 ± 1° for alloy containing 2 at.% Er. Wide supercooled liquid regions of 129 K and 119 K were found for the base alloy and the alloy containing 2 at.% Er.     

Time resolved thermal lens measurements of the thermo-optical properties of Nd2O3-doped low silica calcium aluminosilicate glasses down to 4.3 K

In this work, the thermal lens spectrometry was applied to measure the thermo-optical properties of Nd₂O₃-doped low silica calcium aluminosilicate glasses as a function of temperature, between 4.3 and 300 K. The thermal relaxation calorimetry was used to determine the specific heat, c_p. The results showed a decrease of the thermal diffusivity of about one order of magnitude from 4.3 K up to 300 K, with a T^?1 dependence in the interval between 20 and 70 K and a T^?0.35 between 4.3 and 20 K. The fluorescence quantum efficiencies of the doped samples were calculated down to 50 K, showing a variation of the order of 12% and 25% for the samples with 0.6 and 1.04 mol% of Nd₂O₃, respectively. In addition, the temperature corresponding to the maximum in c_p/T³, the so-called boson peak, was observed at about 17 K for the undoped sample and at lower temperatures for the doped glasses. In conclusion, our results showed the ability of the time resolved thermal lens to determine the thermo-optical properties of glasses at temperatures lower than 300 K, bringing new possibilities for experiments in a wide range of optical materials.