Effect of acid,water and alcohol ratios on sol-gel preparation of antireflective amorphous SiO2 coatings

Varying amounts of nitric acid catalyst, water and ethyl alcohol were used in the preparation of SiO₂ sols by hydrolysis and condensation reactions of tetraethyl orthosilicate in a one step acid catalysis process. Hydrolysis of TEOS was followed by FT-IR analyses. Size of SiO₂ particles was seen to vary in 8–41 nm range with respect to changing HNO₃ and water amounts in the sols. Gelation occurred in some systems. Surfaces of films were examined by FESEM and AFM, after coating on glass substrates by dip coating. Thicknesses of the films were measured to be in the range of 80–120 nm. 5.6 ± 0.2% point increase in light transmittance was obtained when HNO₃/TEOS (mol/mol) ratio of 4.74 × 10^? 4 and H₂O/TEOS (mol/mol) ratio of 9.08 were utilized. Sols were found to be stable for months and coatings prepared after 45 days still provided 5.2 ± 0.2% point increase in light transmittance.     

Glass formation in and structural investigation of Li2S + GeS2 + GeO2 composition using Raman and IR spectroscopy

Li₂S + GeS₂ + GeO₂ ternary glasses have been prepared and a wide glass-forming range was obtained. The glass transition temperatures increase with the GeO₂ concentration in the glasses. The vibrational modes of both bridging (Ge–S–Ge) and non-bridging (Ge–S⁻) sulfurs are observed in Raman and IR spectra of binary Li₂S + GeS₂ glasses. Additions of GeO₂ to this binary glass increase the bridging oxygen band (Ge–O–Ge) at the expense of decreasing the bridging sulfur band (Ge–S–Ge), whereas the bands associated with the non-bridging sulfurs (Ge–S⁻) remain constant in intensity up to high GeO₂ concentrations. At higher concentrations of GeO₂ (⩾60%), the non-bridging oxygen band, which is not observed at low and intermediate GeO₂ concentrations, appears and grows stronger. From these observations, it is suggested that the added lithium ions favor the non-bridging sulfur sites over the oxygen sites to form non-bridging sulfurs, whereas the added oxygen prefers the higher field strength Ge⁴⁺ cation to form bridging Ge–O–Ge bonds. The structural groups in the Li₂S + GeS₂ + GeO₂ glasses that are consistent with results of Raman and IR spectra are described and are used to develop a structural model of these glasses.     

Absorption and luminescence in amorphous SixGe1-xO2 films fabricated by SPCVD

Optical absorption and photoluminescence of Ge-doped silica films fabricated by the surface-plasma chemical vapor deposition (SPCVD) are studied in the 2–8 eV spectral band. The deposited on silica substrate films of about 10 μm in thickness are composed as x·GeO₂-(1-x)·SiO₂ with x ranging from 0.02 to 1. It is found that all as‐deposited films do not luminesce under the excitation by a KrF (5 eV) excimer laser, thus indicating lack of oxygen deficient centers (ODCs) in them. After subsequent fusion of silicon containing (x < 1) films by a scanning focused CO₂ laser beam absorption band centered at 5 eV as well as two luminescence bands centered at blue (3.1 eV) and UV (4.3 eV) wavelengths arise, highlighting the formation of the ODCs. The excitation of unfused SPCVD films by an ArF (6.4 eV) excimer laser yields a luminescence spectrum with two bands typical for the ODCs, but with a faster decay kinetics. Intensities of these bands grow up with samples cooling down to a temperature of 80–60 K. Unfused films excited by the ArF laser also demonstrate luminescence due to recombination of a trapped charge resulted from the excitation of localized electron states of the glass network. In the unfused GeO₂ film luminescence related to a self-trapped exciton (STE) typical for GeO₂ crystals with α-quartz structure is observed. The observed STE luminescence can be indicative of the crystalline fraction availability in the film. Whereas GeO₂ crystals are known as not containing twofold coordinated germanium, a polycrystalline inclusion in the SPCVD GeO₂ film serves as a factor explaining the absence of any spectroscopic manifestation of this type of defects in it even after fusion. On the other hand, lack of STE luminescence in other unfused films with x < 1 testifies truly amorphous state of the matter in them.     

GeO2 based high k dielectric material synthesized by sol–gel process

Recently, there has been lot of research on new high dielectric constant (high k) materials for use in future generations of ultra-large scale integrated circuits (ULSI). There are number of requirements for the new high k materials, such as high dielectric constant, thermal stability (400 °C or higher), high mechanical strength, and good adhesion to neighboring layers. Keeping in view the properties required for the replacement of existing SiO₂ dielectrics, new high k dielectric material based on GeO₂ has been synthesized. Polycrystalline GeO₂ thin films have been deposited by simple, and cost effective sol–gel spin coating process. The obtained xerogel films of germanium oxide have been annealed at 400 °C, 600 °C and 800 °C for 3 h in argon atmosphere. Elemental composition, morphology, and phase analysis have been measured by employing X-ray photoelectron spectroscopy, scanning electron microscopy, and X-ray diffraction techniques, respectively. The formation of the hexagonal GeO₂ phase at and above 400 °C has been reported. The composition of the annealed films have been measured and found to be 68 at.% of O, 32 at.% of Ge for GeO₂, which are close to the stoichiometry of the GeO₂.     

Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

Bismuth silicate and bismuth titanate thin films were deposited by atomic layer deposition (ALD). A novel approach with pulsing of two Bi-precursors was studied to control the Si/Bi atomic ratio in bismuth silicate thin films. The crystallization of compounds formed in the Bi₂O₃–SiO₂ and Bi₂O₃–TiO₂ systems was investigated. Control of the stoichiometry of Bi–Si–O thin films was studied when deposited on Si(1 0 0) and crystallization was studied for films on sapphire and MgO-, ZrO₂- and YSZ-buffered Si(1 0 0). The Bi–Ti–O thin films were deposited on Si(1 0 0) substrate. Both Bi–Si–O and Bi–Ti–O thin films were amorphous after deposition. Highly a-axis oriented Bi₂SiO₅ thin films were obtained when the Bi–Si–O thin films deposited on MgO-buffered Si(1 0 0) were annealed at 800 °C in nitrogen. The full-width half-maximum values for 200 peak were also studied. An excess of bismuth was found to improve the crystallization of Bi–Ti–O thin films and the best crystallinity was observed with Ti/Bi atomic ratio of 0.28 for films annealed at nitrogen at 1000 °C. Roughness of the thin films as well as the concentration depth distribution were also examined.     

Structural investigations of nitrided Nb2O5 and Nb2O5–SiO2 sol–gel derived films

Sol–gel derived xNb₂O₅–(100 ? x)SiO₂ films (where x = 100, 80, 60, 50, 40, 20, 0 mol%) were nitrided at various temperatures (800 °C, 900 °C, 1000 °C, 1100 °C and 1200 °C). The structural transformations occurring in the films as a result of ammonolysis were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The XRD results have shown that the temperatures below 1100 °C were too low to obtain a pure NbN phase in the samples. The AFM observations indicate that the formation of the NbN phase and the size of NbN grains are related to the silica content in the layer. NbN grains become more regular and larger as the niobium content increases. The maximum grain size of about 100 nm was observed for x = 100. Preparation of the Nb₂O₅–SiO₂ sol–gel derived layers and the subsequent nitridation is a promising method of inducing crystalline NbN in amorphous matrices. It follows from the XPS results that a small amount of Nb₂O₅ remains in the films after nitridation at 1200 °C and that nitrogen reacted not only with Nb₂O₅ but also with SiO₂.     

Nitridation of SiO2–B2O3 aerogels

SiO₂–B₂O₃ aerogels have been prepared by drying wet gels at a supercritical condition for ethanol in an autoclave. Aerogels have been nitrided for 6 h in flowing ammonia at the temperature of 1200 °C. It has been found that the amount of nitrogen incorporated in these aerogels always exceeds 20 wt%. This is a much higher value compared with the amount of nitrogen incorporated in a pure silica aerogel nitrided at the same conditions. The specific surface area of SiO₂–B₂O₃ aerogels has been between 312 and 359 m²/g. After nitridation some shrinkage of aerogels has been observed and the surface area decreases about 20%. In FTIR spectra of SiO₂–B₂O₃ aerogels a typical bands for SiO₂ are observed. After nitridation a shift and broadening of 1100 cm^?1 band to lower wavenumbers indicates that Si–N and B–N bonds are formed in nitrided aerogels.     

Boron removal from metallurgical-grade silicon using lithium containing slag

The possibility of extracting boron impurity from metallurgical-grade silicon by lithium containing slag refining for solar cell application was investigated. The distribution coefficients of boron between CaO–SiO₂–Li₂O and CaO–SiO₂–LiF slags were examined. The boron content in the refined silicon was studied under different conditions of mass ratio of slag to silicon and refining time. The results showed that a small amount of Li₂O or LiF had significant effect on the distribution coefficients of boron. The removal of boron impurity using CaO–SiO₂–LiF system was more effective than using CaO–SiO₂–Li₂O system. Values of boron content in the refined silicon did not decrease significantly when the mass ratio exceeded 4, while it had been obviously falling with the increase in refining time. When the mass ratio of CaO–SiO₂–Li₂O slag to metallurgical-grade silicon was 4, the boron content in silicon was successfully reduced from 2.2 × 10^? 5 to 1.3 × 10^? 6 after slag refining for 2 h at 1823 K.     

Optical investigations of germanium nanoclusters – Rich SiO2 layers produced by ion beam synthesis

In this work, refractive index and extinction coefficient spectra of germanium nanoclusters – rich SiO₂ layers have been determined using variable angle spectroscopic ellipsometry (VASE) in the 250–1000 nm range. The samples were produced by Ge⁺ ion implantation into SiO₂ layers on Si substrates and subsequent annealing at temperatures from 700 to 1100 °C. It is known from previous investigations of similar samples that the Ge nanoclusterization process starts already at 800 °C and spherical Ge nanocrystallites 5–8 nm in diameter are observed in the SiO₂ layers after annealing for 1 h at even higher temperatures of 1000–1100 °C. Rutherford backscattering spectrometry (RBS) was employed to measure the Ge atom concentration depth profiles in the studied samples. The RBS results helped us choose realistic models for the VASE analysis which were necessary for a proper interpretation of the VASE data. It has been found that the refraction index value for the SiO₂/Si layer increases after Ge implantation. This effect can be explained by a defect-dependent compaction of ion-bombarded layers. A band’s tail in the extinction coefficient spectra for all the samples is observed which originates from a strong ultraviolet absorption band at 6.8 eV due to a Germanium Oxygen-Deficiency Center (GeODC) and/or a Ge-E’center in SiO₂. The annealing process results in the emergence of weaker extinction coefficient bands in the 400–600 nm region, associated with direct band-to-band transitions in Ge nanostructures. Transformation of these bands, including their blue-shift with the increasing annealing temperature could be explained via a quantum-confinement mechanism, by size and structural changes in Ge nanostructures.     

Reactions between sol–gel coatings and some technical glass substrates during consolidation

SiO₂ and Na₂O–SiO₂ coatings have been applied on float glass and other technical glass substrates by a sol–gel dip-coating process. After drying and baking these films at temperatures up to 500 °C and for times up to 1020 min, the in-depth profiles of the different constituents were measured by secondary neutral mass spectrometry (SNMS). Sn, Al, and Si turned out to be immobile, whereas a diffusion coefficient of ≈10⁻¹⁷ cm²/s could be evaluated for Mg at 500 °C for the transport from float glass into the films. Ca diffused a little faster, however, especially for the Na₂O–SiO₂ films a saddle point and finally a peak occurred in the interface region. This interface peak was even stronger for Na, showing quite anomalous profiles. The mechanism of this peak formation is explained mainly as an up-hill diffusion process. According to this model at the interface non-bridging –O⁻ ions are formed, whose electroneutrality has to be maintained by mobile cations like Na⁺ and Ca²⁺, even diffusing against their own concentration gradient. The other glass substrates, two borofloat glasses and an alkali-poor display glass showed similar but less pronounced effects.     

Correlation between the method of preparation and the properties of the sol–gel HfO2 thin films

This work describes the preparation of HfO₂ thin films by the sol–gel method, starting with different precursors such as hafnium ethoxide, hafnium 2,4-pentadionate and hafnium chloride. From the solution prepared as mentioned above, thin films on silicon wafer substrates have been realized by ‘dip-coating’ with a pulling out speed of 5 cm min^?1. The films densification was achieved by thermal treatment for 10 min at 100 °C and 30 min at 450 °C or 600 °C, with a heating rate of 1 °C min^?1. The structural and optical properties of the films are determined employing spectroellipsometric (SE) measurements in the visible range (0.4–0.7 μm), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The main objective of this paper was to establish a correlation between the method of preparation (precursor, annealing temperature) and the properties of the obtained films. The samples prepared from pentadionate and ethoxide precursors are homogenous and uniform in thickness. The samples prepared starting from chloride precursor are thicker and proved to be less uniform in thickness. Higher non-uniformity develops in multi-deposition films or in crystallized films. A nano-porosity is present in the quasi-amorphous films as well in the crystallized one. For the samples deposited on silicon wafer, the thermal treatment induced the formation of a SiO₂ layer at the coating–substrate interface.     

Vibrational spectroscopy study of niobium germanosilicate glasses

A series of glasses in the (Ge,Si)O₂–Nb₂O₅–(Na,K)₂O system were prepared by melting and casting. Their density and characteristic temperatures were determined by Differential Thermal Analysis (DTA) and their structure was analyzed by infrared and polarized Raman spectroscopies. DTA data have indicated an increased glass thermal stability with the replacement of GeO₂ by SiO₂. Kramers–Kronig analysis of the infrared specular reflectance data indicated a strong ionic character for the germanosilicate glasses. The Raman spectra of germanosilicate compositions were generally dominated by an intense Boson peak at ∼72 cm⁻¹ and a high frequency, polarised peak at ∼880 cm⁻¹, related to NbO₆ octahedra with at least one non-bridging oxygen. The germanosilicate structure appears to be formed by alternating GeO₄ tetrahedra and NbO₆ octahedra, in addition to SiO₄ tetrahedra.     

Formation of Co2+-doped nanocrystals in La2O3–MgO–Al2O3–SiO2 glass-ceramics

Transparent glass-ceramics were synthesized by heat-treatment of glass with a composition of 5La₂O₃–13.2MgO–28.8Al₂O₃–46SiO₂–4.5TiO₂–2.5ZrO₂–0.15CoO (LMAS) (wt.%). The activation energy of crystallization and the Avrami parameter for the LMAS glass were determined from the DTA curves at different heating rates. The most two intense bands of Raman spectrum of initial glass at ~ 810 cm^?1 and ~ 900 cm^?1 were connected with the presence of [SiO₄] and [TiO₄] tetrahedral, respectively. After heat-treated at 700 °C/10 h+820 °C/8 h, the intensity of the band for [TiO₄] tetrahedral weakened, while an intensive band at ~ 800 cm^?1 for the Ti–O bond appeared. Other bands were characteristics of high-silicate network and x(MgTi₂O₅)·y(Al₂TiO₅) polycrystals. The changes reflected phase separation after heat-treatment of the initial glass. The strong absorption band of glass-ceramics centered at 580 nm can be assigned to ⁴A₂(⁴F)→⁴T₁(⁴P) and the broad absorption band at 1100–1700 nm to ⁴A₂(⁴F)→⁴T₁(⁴F) transitions of tetrahedral coordinated Co²⁺ ion. Two broad emission bands, one was around 660 nm, the other was from 800 nm to 1050 nm, of glass-ceramics correspond to the ⁴T₁(⁴P)→⁴A₂(⁴F) and ⁴T₁(⁴P)→⁴T₂(⁴F) transitions of tetrahedral coordinated Co²⁺ ions. The absorption and emission features clearly demonstrated that Co²⁺ ions were incorporated into nanocrystals and located in tetrahedral sites.     

Fabrication and characterization of Er3+-doped GeO2–PbO and GeO2–PbO–Bi2O3 glass fibers

Glass fibers were drawn from GeO₂–PbO–Bi₂O₃ and GeO₂–PbO melts previously doped with Er³⁺. From the differential thermal analysis curve, the glass transition temperature was determined to be 420 °C, and no crystallization peak was observed in the temperature range of that analysis, indicating stability with regard to devitrification. Raman spectroscopy was performed to characterize the structure of the glasses, which exhibited large transmission windows (0.5–5.0 μm) and large refractive indices (∼2.0). Infrared to visible upconversion of Er³⁺ was observed in the fibers. The visible emissions were related to the upconverted green emissions at about 530 nm (²H_11/2 → ⁴I_15/2) and 550 nm (⁴S_3/2 → ⁴I_15/2), and red emission at 668 nm (⁴F_9/2 → ⁴I_15/2) under 980 nm excitation. The infrared transition (⁴I_13/2 → ⁴I_15/2) was peaked at 1.53 μm. The results obtained suggest that the fibers exhibit the same structures as the parent glasses and can be used in upconversion fiber optical devices.     

Properties and structure of (1 − x)Li2O–xNa2O–Al2O3–4SiO2 glass systems

(1 − x)Li₂O–xNa₂O–Al₂O₃–4SiO₂ glasses were studied for the progressive percentage substitution of Na₂O for Li₂O at the constant mole of Al₂O₃ and SiO₂. The crystallization temperature at the exothermic peak increased from 898 to 939 °C when the Na₂O content increases from 0 to 0.6 mol. The coefficient of thermal expansion and density of these as-quenched glasses increase from 6.54 × 10⁻⁶ °C⁻¹ to 10.1 × 10⁻⁶ °C⁻¹ and 2.378 g cm⁻³ to 2.533 g cm⁻³ when the Na₂O content increases from 0 to 0.4 mol, respectively. The electrical resistivity has a maximum value at Na₂O · (Li₂O + Na₂O)⁻¹ = 0.4. The activation energy of crystallization decreases from 444 to 284 kJ mol⁻¹ when the Na₂O content increased from 0 to 0.4 mol. Moreover, the activation energy increases from 284 kJ mol⁻¹ to 446 kJ mol⁻¹ when the Na₂O content increased from 0.4 to 0.6 mol. The FT-IR spectra show that the symmetric stretching mode of the SiO₄ tetrahedra (1035–1054 cm⁻¹) and AlO₄ octahedra (713–763 cm⁻¹) exhibiting that the network structure is built by SiO₄ tetrahedra and AlO₄.     

Superconducting properties of an NbN–SiO2 disordered system obtained by ammonolysis of NbN–SiO2 sol–gel derived coatings

Studies in superconducting properties of NbN–SiO₂ films are reported. The films were obtained through nitridation of sol–gel derived Nb₂O₅–SiO₂ coatings at 1200 °C, a process leading to the formation of disordered structures with NbN metallic grains dispersed in the insulating SiO₂ matrix. Electrical resistivity was measured with the conventional four-terminal method in the temperature range from 5 to 280 K. The samples’ superconducting properties, examined with magnetically modulated microwave absorption (MMMA), depend on the NbN/SiO₂ molar ratio and the film’s thickness.     

Active planar waveguides based on sol–gel Er3+-doped SiO2–ZrO2 for photonic applications: Morphological,structural and optical properties

Er³⁺-doped glass-ceramic SiO₂–ZrO₂ optical planar waveguides were prepared by the sol–gel route using different SiO₂:ZrO₂ molar ratios (90:10, 85:15, 80:20 and 75:25). Multilayered films were deposited onto Si(1 0 0) substrates by the dip-coating technique. Structural characterization was performed using vibrational spectroscopy and X-ray diffraction. Some optical properties, densification and surface morphology of these films were investigated as a function of the SiO₂:ZrO₂ ratio, annealing temperature and time. Optical properties such as refractive index, number of propagating modes and attenuation coefficient were measured at 632.8, 543.5 and 1550 nm, by the prism coupling technique. Uniform surface morphology with roughness less than 0.5 nm. Low losses, less than 0.9 dB/cm at 612.8 nm in the TE₀ mode, were measured for the planar waveguides containing up to 25 mol% zirconium oxide. Luminescence of Er³⁺ in the near infrared was observed for the active nanocomposite.     

Photoluminescence of Si or Ge nanocrystallites embedded in silicon oxide

This paper presents the results of photoluminescence, its temperature dependence and Raman scattering investigations on magnetron co-sputtered silicon oxide films with (or without) embedded Si (or Ge) nanocrystallites. It is shown the oxide related defect origin of the visible PL centers peaked at 1.7, 2.06 and 2.30 eV. The infrared PL band centered at 1.44–1.58 eV in Si–SiO_x, system has been analyzed within a quantum confinement PL model. Comparative PL investigation of Ge–SiO_x system has confirmed that high energy visible PL bands (1.60–1.70 and 2.30 eV) are connected with oxide related defects in SiO_x. The PL band in the spectral range of 0.75–0.85 eV in Ge–SiO_x system is attributed to exciton recombination inside of Ge NCs.     

Structure of potassium germanophosphate glasses by X-ray and neutron diffraction: 3. Reverse Monte Carlo simulations

Reverse Monte Carlo (RMC) is used to investigate the origin of the first sharp diffraction peaks (FSDP) found for K₂O–GeO₂–P₂O₅ glasses at very small scattering vector Q = ～7.5 nm^?1. Structures of the ternary glass with the greatest intensity of FSDP (KGeP5 – 25/50/25 mol% K₂O/GeO₂/P₂O₅), of the binary combinations of the three oxides and of vitreous GeO₂ are modeled. Results are deduced from comparisons of the partial structure factors and inspections of model sections. The P sites are uniformly distributed in the structure of KGeP5. The K⁺ ions interact more with the PO₄ units (via O_T-corners) than with Ge-centered units. Main component of the FSDP comes from the S_GeGe(Q) factor. The FSDP is due to separations of ～1 nm between the longish Ge-rich clusters which are visible in the corresponding models. Different to our tentative structural models reported before, the PO₄ tetrahedra possess a broad distribution of numbers of O_T corners. The FSDP’s of the binary K₂O–GeO₂ and K₂O–P₂O₅ glasses (～10 nm^?1) are due to a chemical order between network former and network modifier regions. The MRO of a mixed GeO₂–P₂O₅ glass of small P₂O₅ content (FSDP at ～16 nm^?1) shows great similarity to the MRO of vitreous GeO₂.     

Synthesis and characterization of Cr4+-doped CaO–GeO2–Li2O–B2O3(Al2O3) transparent glass-ceramics

Synthesis and devitrification behavior of Cr-doped CaO–GeO₂–Li₂O–B₂O₃(Al₂O₃) glasses have been studied. A range of glass compositions was found to yield transparent glass-ceramics after devitrification. The size of crystallites is below 1 μm. Glass-ceramic samples exhibit 1050–1600 nm broad-band emission with a maximum around 1260 nm, very similar to the emission of Cr⁴⁺:Ca₂GeO₄ bulk crystals. X-ray diffraction measurements indicate that the structure of crystallites exhibiting near infrared emission in glass-ceramics may be assigned to Cr⁴⁺:Ca₂GeO₄ with increased lattice parameters.