Observation of the modulation instability and frequency-doubling in self-defocusing crystal

We report on the experimental observation of the modulation instability of uniform beam and frequency-doubling of interference fringes spatial frequency in self-defocusing photorefractive crystal LiNbO₃:Fe by the same experimental setup. Frequency-doubling appears if the nonlinearity of the c-axis is bigger than the modulation of the cylindrical lenses, otherwise the modulation instability appears.     

Metallic nonlinear magnetooptical nonreciprocal isolator

In advanced optical fiber communication systems where reflection light might cause degradation of the signal quality, optical waveguide isolators play an important role. The effect of a metal layer with negative permittivity on the behavior of nonlinear-magnetooptic isolator is studied. The isolator consists of metal film, nonlinear cladding, and magnetooptic substrate. It is found that difference between forward and backward propagation for TM₀ mode increases with increasing the absolute value of the tuning parameter which is the permittivity of the metal film, ?_f. It is also found that the maximum cut-off thickness of the isolator occurs in self-defocusing case around η = 0.65 and at the highest assumed value of ?_f = −8. These results are helpful in fabricating an isolator with high performance.     

Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD

ZnO thin films were grown on (1 0 0) p-Si substrates by Photo-assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) using diethylzinc (DEZn) and O₂ as source materials and tungsten-halogen lamp as a light source. The effects of tungsten-halogen lamp irradiation on the surface morphology, structural and optical properties of the deposited ZnO films have been investigated by means of atomic force microscope (AFM), X-ray diffraction and photoluminescence (PL) spectra measurements. Compared with the samples without irradiation, the several characteristics of ZnO films with irradiation are improved, including an improvement in the crystallinity of c-axis orientation, an increase in the grain size and an improvement in optical quality of ZnO films. These results indicated that light irradiation played an important role in the growth of ZnO films by PA-MOCVD.     

Photochemical welding of silica microspheres to silicone rubber by ArF excimer laser

Transparent fused silica (SiO₂) microspheres 2.5 μm in diameter were photochemically welded to transparent, flexible silicone rubber ([SiO(CH₃)₂]_n) substrate by 193 nm ArF excimer laser induced photochemical modification of silicone into silicon oxide. Single layer of silica microspheres was easily formed on an adhesive silicone rubber before laser irradiation after dropping of silica microspheres dispersed in ethanol and subsequent tape peeling. The welding rate, the percentage of welded microspheres tested by ultrasonic cleaning with ethanol, was examined by varying the single pulse fluence and irradiation time of ArF excimer laser. The welding layer underneath microsphere, silicon oxide, was also found to emit white light of strong intensity under UV light illumination.     

Magnetic properties of Nd–Fe–B film magnets prepared by RF sputtering

Highly oriented films of ∼6 μm in thickness consisting of the Nd₂Fe₁₄B compound phase were obtained by a three-dimensional sputtering method at room temperature and the subsequent crystallization by annealing. The c-axis orientation and coercivity of film samples were sensitive to the sputtering parameters and annealing conditions. The optimum temperature and time for annealing were 650 °C and 30 min to show the highest coercivity without any deterioration for the orientation of Nd₂Fe₁₄B grains, and furthermore the degree of c-axis orientation was increased by decreasing the Ar gas pressure or input power for sputtering. The resultant film magnets with good magnetic properties of B_r=∼1.06 T, H_C=∼371 kA/m, and (BH)_max=∼160 kJ/m³ were obtained under the optimized parameters for sputtering.     

Anisotropy of photoconductivity and nonlinear effects in GaSe monocrystals at high optical excitation

In this work, the photoelectric properties of gallium selenide (GaSe) monocrystals in the edge absorption region, with various configurations of current contacts, at low and high optical excitation levels are investigated. The photoconductivity spectrum behavior is determined by localized electronic and excitonic states along c-axis. It is shown that the localization of electronic and excitonic states in one-dimensional fluctuation potential along c-axis results to an anisotropy in photoconductivity spectrum at various current contacts configurations. At E⊥c the photoconductivity is observed in the hν < E_g and hν > E_g regions. In the case of hv < E_g, the maximum photoconductivity, in the impurity and exciton absorption region are observed at 1.975 eV and 2.102 eV, respectively. With rising of excitation energy level, suppression of photoconductivity in the exciton absorption region and increases in impurity absorption region is observed. At E||c contact configuration, the considerable photoconductivity is observed only in the impurity absorption region, which also increases with rising of excitation level. It is supposed that, suppression of photoconductivity in the exciton absorption region at high excitation levels is connected with exciton-exciton interaction, which results to a nonlinear light absorption. The results are compared with the absorption and photoluminescence measurements.     

Unidirectional variation of lattice constants of Al-N-codoped ZnO films by RF magnetron sputtering

Al-N-codoped ZnO films were fabricated by RF magnetron sputtering in the ambient of N₂ and O₂ on silicon (1 0 0) and homo-buffer layer, subsequently, annealed in O₂ at low pressure. X-ray diffraction (XRD) spectra show that as-grown and 600 °C annealed films grown by codoping method are prolonged along crystal c-axis. However, they are not prolonged in (0 0 1) plane vertical to c-axis. The films annealed at 800 °C are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. X-ray photoelectron spectroscopy (XPS) shows that Al content hardly varies and N escapes with increasing annealing temperature from 600 °C to 800 °C.     

Factors that influence the modulation instability in self-defocusing photorefractive crystal

We report on the experimental observation of the modulation instability in self-defocusing photorefractive LiNbO₃: Fe crystal. Experimental results show that the modulation instability is related to the illumination time; and it is also related to the angle that between the direction of c-axis and the direction of the threadlike beam that illuminate the crystal. And the modulation instability is also related to the shape of the incident light.     

One-dimensional electronic order in underdoped surface of YBa2Cu3Oy studied by STM

We have performed low-temperature scanning tunneling microscopy (STM) experiments on the cold-cleaved surface of YBa₂Cu₃O_y single crystals to study the nanoscale electronic order in high-T_c superconductors. STM images measured at low-bias voltage below ∼50 meV show the one-dimensional (1D) electronic modulation along the Cu-O bonds (parallel to the b-axis). The 1D electronic modulation does not have long-range order and the periodicity along the a-axis varies within the range ∼2a-4a depending on the position on the surface, indicating the glassy electronic order in the underdoped CuO₂ plane.     

Magnetic structures and magnetocrystalline anisotropy in bulk and thin film Fe3Pt

Magnetic structures and magnetocrystalline anisotropy (MCA) of tetragonal phase Fe₃Pt with an L1₂ atomic ordering in bulk and thin film are investigated by means of the first-principles full-potential linearized augmented plane-wave method. The results obtained predict that the tetragonal phase, in which the tetragonal distortion with (c/a) = 0.95 makes an asymmetry of magnetic properties along the c-axis (out-of-plane) and a-axis (in-plane), has an out-of-plane MCA. In addition, from the thin film calculations, the presence of surface is found to strongly enhance the out-of-plane MCA.     

Gigantic uniaxial pressure effect in single crystals of iron-based superconductors

In order to elucidate the anisotropic pressure effect on superconductivity in an iron-based superconductor, magnetization measurements have been performed in Ba(Fe_0.92Co_0.08)₂As₂ single crystals under uniaxial pressures applied along the c-axis. Gigantic T_c suppression, dT_c/dP_//c = −15 K/GPa, was observed when the anisotropic deformation with the a-expansion and c-compression was induced by the c-pressure, which should be compared with dT_c/dP < +1 K/GPa in the isotropic pressure case. This suggests that the a-axis (c-axis) compression has a positive (negative) contribution to T_c.     

Time series of ac conductivities of terbium nitrate crystals at low temperatures

Time series of ac conductivities are measured at 2 kHz along three crystal directions in terbium nitrate crystal below 50 K. The anisotropy is found in the structure of the fluctuation observed in the time series of the conductivities. The bursts with non-periodic oscillations are found in only the measurements of the time series of the ac conductivities for one direction perpendicular to the c-axis (c2-axis). The anisotropy is seen in probability distribution functions and power spectral ones derived from the time series of the conductivities. The characteristic behaviors are found in the time series of the conductivity for the one crystal direction perpendicular to the c-axis. Asymmetric non-Gaussian line shape of the probability distribution function is seen for the c2-axis. Chaotic behavior is also found in the function of the correlation exponent to the embedding dimension derived from the time series of the conductivities.     

Propagation of a light pulse inside matter in a context of the Abraham–Minkowski dilemma

It is shown that a light pulse propagating in an optical medium exerts the optical pressure on the medium in the regions where leading and trailing edges are propagating. This effect is derived from analysis of unambiguous thought experiments which results contradict one other. It is shown that a magnitude of the pressure is equal to (n − 1/n)W₀, where n and W₀ is the refractive index of the medium and the momentum flux density of the same pulse in free space, respectively. The Abraham form of the momentum of light is redundant if the optical pressure is taken into account. In this case the dilemma disappears because one of the rival alternatives disappears.     

Ultraviolet photoconductive detector based on Al doped ZnO films prepared by sol-gel method

We report a study on the fabrication and characterization of ultraviolet photodetectors based on ZnO:Al films. Using sol-gel technique, highly c-axis oriented ZnO films with 5 mol% Al doping were deposited on Si(1 1 1) substrates. The photoconductive UV detectors based on ZnO:Al thin films, having a metal-semiconductor-metal (MSM) structure with interdigital (IDT) configuration, were fabricated by using Au as a contact metal. The characteristics of dark and photocurrent of the UV detector and the UV photoresponse of the detector were investigated. The linear current-voltage (I-V) characteristics under both forward and reverse bias exhibit ohmic metal-semiconductor contacts. Under illumination using monochromatic light with a wavelength of 350 nm, photo-generated current was measured at 58.05 μA at a bias of 6 V. The detector exhibits an evident wide-range spectral responsivity and shows a trend similar to that in transmittance and photoluminescence spectrum.     

Diode-pumped Nd:BaY2F8 picosecond laser

Picosecond pulse generation at 1050 nm by a diode-pumped Nd:BaY₂F₈ (Nd:BaYF) active crystal has been investigated under low-power pumping (440 mW absorbed). The sample was oriented along the optical axes and cut at Brewster angle for y-axis laser polarization to minimize birefringence effects. Stable passive mode-locking operation has been achieved by inverse saturable absorption with 80-mW output power and 3.7-ps pulses.     

White-Light Nonlinear Photonic Lattices in Self-Defocusing Media

Using fully incoherent white light emitted from an incandescent lamp and amplitude mask, we experimentally investigate the influence of several factors on the fabrication of the lattice in photovoltaic self-defocusing LiNbO3：Fe crystal, the factors include the orientation of the crystalline c axis relative to the principal axis of the photonic lattice and the filament, the diameter of input dark spot and the separation of the adjacent input dark spots. Experimental results reveal that the best fabricating condition of photonic lattices is that the principal axis of lattice is tilted for 45^o relative to the crystalline c axis which is parallel to the filament of the lamp. In addition, it is necessary that the diameter of the input dark spot is larger than the half of their separation.     

Anisotropic properties of self-flux grown LiB3O5 single crystals

In this paper, we report the existence of anisotropic behavior along the crystallographic axes in optical, electrical and thermal properties of lithium tri borate, a recently developed vacuum UV-NLO material. The variation of refractive index with the wavelength along the crystallographic axes was investigated by prism coupling method. The results of impedance spectroscopy measurement reveal the presence of a strong anisotropy in ionic conductivity and dielectric constant along the axes and also show the super-ionic conduction behavior along the c-axis with the activation energy of Δ∼0.20 eV. A thermo-mechanical study in the temperature range of 300-900 K indicates the existence of a strong variation in the linear thermal expansion coefficient (positive value along the a-axis, and negative value along the c-axis) of LiB₃O₅ crystals.     

Influence of Hf doping concentration on microstructure and optical properties of HfxZn1−xO thin films

Hf_xZn_1−xO thin films (x=3, 7, 10 and 15 mol%) were deposited on Si (1 0 0) using pulsed laser deposition. The influence of the Hf concentration on the microstructure and optical properties of the films was studied. It is found that Hf ions can be effectively doped into ZnO and all films crystallize in the hexagonal wurtzite structure with a preferred c-axis orientation. The lattice constants of Hf_xZn_1−xO films increase with the Hf contents. Two ultraviolet peaks centered at about 364 and 380 nm coexist in the fluorescent spectra. With increasing the Hf contents, the intensity of fluorescent peaks enhances remarkably. At the same time the energy gaps gradually increase, while the positions of ultraviolet peaks remain unchanged. The mechanism of luminescent emission for Hf_xZn_1−xO films was discussed.     

Laser-induced thermoelectric voltage in normal state MgB2 thin films

Laser-induced voltage has been observed in c-axis oriented MgB₂ thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB₂.