Ultrafast all-optical XOR logic gate based on a symmetrical Mach-Zehnder interferometer employing SOI waveguides

We present an integrated Silicon-on-Insulator (SOI) based Mach-Zehnder interferometer (MZI) in order to perform ultrafast all-optical XOR logic gate operation with a bit rate of ∼ 0.33 Tb/s. A numerical simulation is carried out in order to study various parameters such as extinction ratio and eye-opening parameters, characterizing the performance of the XOR logic gate. The output XOR logic gate signal can have improved extinction and eye margin if the initial powers of primary signals and the probe continuous-wave (CW), and SOI waveguide length are judiciously adjusted.     

All optical latches using quantum-dot semiconductor optical amplifier

The design and performance of two optical latches, the Set-Reset (SR) latch and D-Flip-Flop has been studied. These latches are the building blocks of large optical processors. The latches are built using two optical logic operations NAND and NOT. Both NAND and NOT operations are realized by using Mach-Zhender interferometer (MZI) utilizing semiconductor optical amplifier with quantum dot active region (QD-SOA). Nonlinear dynamics including carrier heating and spectral hole-burning in the QD-SOA are taken into account together with the rate equations in order to realize the all-optical logic operations. Results show that this scheme can realize the functions of Set-Reset latch and D-Flip-Flop at high speeds (∼250 Gb/s). The dependence of the output quality (Q factor) on QD-SOA parameters is also discussed.     

Design of ultra compact all-optical XOR and AND logic gates with low power consumption

We propose a novel ultra-compact all-optical XOR and AND logic gates without using nonlinear optics. In order to realize these devices, we adopt photonic crystal waveguides (PCWs) based on multi-mode interference devices. Numerical results show that the operating bandwidth of the ON to OFF logic-level contrast ratio of not less than 6.79 dB is 35 nm for XOR logic gate and 9 nm for AND logic gate. Proposed logic gates have the potential to be key components for an optical packet switching system due to their small feature sizes and low power consumption.     

Reconfigurable all-optical logic gate using four-wave mixing (FWM) in HNLF for NRZ-PolSK signal

We demonstrate a reconfigurable all-optical logic gate for NRZ-PolSK signal based on FWM in a highly nonlinear fiber at 10 Gb/s. Half subtracter, XOR, AB?, āB or XNOR, AND, and NOR logic gates can be implemented simultaneously. The input power for the HNLF is optimized to be as low as about 15.2 dBm and the high Q factors above 8 dB for eye diagrams are achieved. Experimental results show Q factors of AB?, āB, AND, and NOR were higher than those of XOR, and XNOR. Error-free operation is achieved experimentally for 10 Gb/s 2⁷-1 pseudorandom bit sequence (PRBS) data. Power penalties for the logic gate are less than 3 dB. Simulation analysis about the wavelength characteristic for all logic gates is given and it predicts that the reconfigurable logic gate can realize error-free operation when the wavelength separation is less than 5 nm.     

Parity checking and generating circuit with semiconductor optical amplifier in all-optical domain

In this paper, an all-optical parity checker and parity generator circuit is proposed in which SOA-MZI configuration is used to implement the XOR logic gate. This performance monitoring logic device is simulated at ultra high speed i.e. 120 GHz. Two logic circuits are proposed for parity generator, in one design inverter used to generate parity bit is implemented by the same additional XOR gate as inverter while in 2nd design inverter is implemented using XGM in SOA and thus number of SOA in 2nd design is reduced. ER ratio achieved in 1st case is 9.28 with maximum Q factor 73.39 and minimum BER 0 while in 2nd design it is 9.35 with maximum Q factor 8.41 and minimum BER 1.93e−17. ER ratio achieved in parity checker circuit is 32.54 with maximum Q factor 77.76 and minimum BER 0.     

On the feasibility of full pattern-operated all-optical XOR gate with single semiconductor optical amplifier-based ultrafast nonlinear interferometer

The possibility of implementing an ultrafast all-optical XOR gate using a single semiconductor optical amplifier (SOA)-based ultrafast nonlinear interferometer (UNI) is theoretically investigated and demonstrated. For this purpose a comprehensive model that characterizes the performance of a SOA when it is successively driven by two strong pseudorandom binary sequences is applied to simulate the specific module under dual rail switching mode of operation. In this manner an extensive set of curves is obtained allowing to analyze and evaluate the impact of the input data, SOA and interferometer critical parameters on the fully loaded Q-factor. Their thorough study and interpretation reveals that the satisfaction of their requirements in order to render acceptable this metric is feasible from a technological perspective and thus if their selection is made according to the extracted guidelines then pattern-free and error-free modulo-2 arithmetic can be straightforwardly realized at 20 Gb/s. This prediction can be of practical interest in simplifying and assisting the design of more sophisticated interconnections of enhanced combinatorial and sequential functionality in which the XOR gate is the core logical unit.     

The correlation energies and nonlinear optical absorptions of an exciton in a disc-like quantum dot

Using exact diagonalization techniques, the low-lying states of an exciton, and the linear and nonlinear optical absorptions in a disc-like quantum dot are theoretically studied. The numerical results for the typical GaAs material show the so-called quantum size effect. Also, our study is restricted on the transition between the S state (L = 0) and the P state (L = 1). The optical absorption coefficients are greatly enhanced because of the induced size confinement. Meantime, we find that the total optical absorption coefficient is about two times bigger than that obtained by without considering exciton effects. Additionally, the optical absorption saturation intensity can be controlled by the incident optical intensity I.     

Turbo-switched Mach-Zehnder interferometer performance as all-optical signal processing element at 160 Gb/s

Two variations of the active Mach-Zehnder interferometer (MZI) that incorporate the recently proposed turbo-switch effect are introduced to carry out three key functionalities in forthcoming high-speed optical telecommunication networks, namely, all-optical wavelength conversion, photonic XOR gating and optical time-division demultiplexing. Their performance is numerically investigated at 160 Gb/s using a sophisticated semiconductor optical amplifier (SOA) model. The more practical of the two proposed geometries shows error-free operation as XOR Boolean gate, low patterning as wavelength converter, and poor performance as demultiplexer. For comparison, results derived from well-accepted (or typical) schemes are also presented, and the role of the required extra SOAs as distinguishing elements of the new architectures is investigated.     

Experimental demonstration on 40 Gbit/s all-optical multicasting logic XOR gate for NRZ-DPSK signals using four-wave mixing in highly nonlinear fiber

We propose and demonstrate all-optical multicasting logic XOR gate for non-return-to-zero differential phase-shift keying (NRZ-DPSK) signals by using non-degenerate four-wave mixing (FWM) in a highly nonlinear fiber (HNLF). Theoretical analysis regarding the operation principle of NRZ-DPSK logic XOR gate is clearly described by deriving an analytical solution under the non-depletion approximation. The NRZ-DPSK logic XOR operation is attributed to the linear relationship of complex amplitudes between converted idlers and input NRZ-DPSK signals. By using three non-degenerate FWM processes in an HNLF, 40 Gbit/s all-optical multicasting logic XOR gate for NRZ-DPSK signals are successfully demonstrated in the experiment.     

Nonlinear optical properties of a D system in a spherical quantum dot

The nonlinear optical properties of a D⁻ system confined in a spherical quantum dot represented by a Gaussian confining potential are studied. The great advantage of our methodology is that the model potential possesses the finite height and range. Calculations are carried out by using the method of numerical diagonalization of Hamiltonian matrix within the effective-mass approximation. We calculate the linear, third-order nonlinear and total optical absorption coefficients under the density matrix formalism. Numerical results for GaAs − Ga_1 − xAl_xAs QDs are presented. Our results show that the optical absorption coefficients in a spherical QD are much larger than their values for GaAs quantum wells. It is found that optical absorptions are strongly affected not only the confinement barrier height, dot radius, the electron-impurity interaction but also the position of the impurity.     

Design and demonstration of a novel optical CDMA platform for use in avionics applications

We designed, built, and demonstrated a highly scalable incoherent optical CDMA platform under DARPA contract which was delivered to Lockheed Martin for additional testing in avionic applications. The platform enables users to communicate with each other at ∼1.25 Gbit/s per user with raw BER of less than 10⁻¹². The system architecture uses (3, 11) fast wavelength-hopping, time-spreading prime codes with a chip size of 73 ps utilizing picosecond optical pulses allocated in the time and wavelength domains. A novel design of a “dual code” optical encoder and decoder realized a novel optical layer implementation of an XOR gate and enabled secure network connectivity using a “One-time pad” encryption approach. The testbed is also designed to conduct eavesdropping studies on testbed users. The incoherent OCDMA approach is compatible with existing DWDM optical networks and uses off-the-shelf components.     

Ge quantum dot molecules and crystals: Preparation and properties

Templated self-organization has been used to prepare two-dimensional arrays as well as three-dimensional quantum dot crystals (QDC) containing Ge dots in a Si host crystal. Si(1 0 0) substrates have been patterned with two-dimensional hole gratings using extreme ultra-violet interference lithography (EUV-IL) and reactive ion etching. The EUV-IL was realized by multiple beam diffraction using Cr gratings on SiN_x membranes fabricated by e-beam lithography. Si/Ge overgrowth was performed by molecular beam epitaxy. The impact of the microscopic shape and size of the prepattern using the mask design and the EUV-IL exposure dose as parameters on the Ge dot nucleation has been studied with atomic force microscopy, transmission electron microscopy and photoluminescence measurements. Adjusting the growth parameters in multiple layer deposition the initial two-dimensional configuration was transferred into three-dimensional QDC.     

Impurity and exciton effects on the nonlinear optical properties of a disc-like quantum dot under a magnetic field

A detailed investigation of the nonlinear optical properties of the (D⁺, X) complex in a disc-like quantum dot (QD) with the parabolic confinement, under applied magnetic field, has been carried by using the perturbation method and the compact density-matrix approach. The linear and nonlinear optical absorption coefficients between the ground (L = 0) and the first excited state (L = 1) have been examined based on the computed energies and wave functions. The competition between the confinement and correlation effects on the one hand, and the magnetic field effects on the other hand, is also discussed. The results show that the confinement strength of QDs and the intensity of the illumination have drastic effects on the nonlinear optical properties. In addition, we note that the absorption coefficients of an exciton in QDs depend strongly on the impurity but weakly on the magnetic field. Furthermore, the light and heavy hole excitons should be taken into account when we study the optical properties of an exciton in a disc-like QD.     

Dependence of Curie temperature on surface strain in InMnAs epitaxial structures

Pairs of self-assembled InMnAs quantum dot structures and reference epitaxial layers (0 < x < 0.13) were prepared on GaAs substrates by low-pressure metal organic vapour phase epitaxy. Magnetic moment measurements indicated that reference epitaxial layer had a Curie temperature of 343 K independent on the composition. On the other hand, the quantum dots prepared under Stranski-Krastanov growth mode from the identical gas phase composition showed a lower value of Curie temperature. This value varied from 41 to 235 K in relation to the material composition. Moiré fringes at transmission electron microscopy plan view were used for characterization of strain in InMnAs quantum dot structures.     

Quasi-achromatic superresolving phase only pupil filters

Reported in this paper is a new design of the quasi-achromatic phase-only superresolving pupil filters (QAPSFs) relatively independent of wavelength based on the zero order Bessel function of the first kind. The effect of design parameters of the new filters on the superresolving performance parameters such as the normalized spot size (G) and the Strehl ratio (S) is discussed and analyzed in detail. As an example, the performance parameters of QAPSFs made of optical quartz glass are simulated and compared with phase only pupil filters, which indicate that this kind of filters is less independent of wavelength in the range from 300 nm to 589 nm for superresolution, and a high Strehl ratio is also obtained. The equivalent performance parameters are derived to characterize the superresolution performance of the quasi-achromatic filter.     

Embedded dots inside glass for optical film using UV laser of ultrafast laser pulse

Microstructures are usually fabricated on the surface of optical sheets to improve the optical characteristics. In this study, a new fabrication process with UV (ultraviolet) laser direct writing method is developed to embed microstructures inside the glass. Then the optical properties of glass such as reflection and refraction indexes can be modified. Single- and multi-layer microstructures are designed and embedded inside glass substrate to modify the optical characteristics. Both luminance and uniformity can be controlled with the embedded microstructures. Thus, the glass with inside pattern can be used as a light guide plate to increase optical performance. First, an optical commercial software, FRED, is applied to design the microstructure configuration. Then, UV laser direct writing with output power 2.5-2.6 W, repetition rate 30 kHz, wave length: 355 nm, and pulse duration 15 ns is used to fabricate the microstructures inside the glass. The effect of dot pattern in the glass such as the dot pitch, the layer gap, and the number of layer on the optical performance is discussed. Machining capacity of UV laser ranges from micron to submicrometer; hence with this ultrafast laser pulse, objectives of various dimensions such as dot, line width, and layers can be easily embedded in the glass by one simple process. In addition, the embedded microstructures can be made with less contamination. Finally, the optical performance of the glasses with various configurations is measured using a Spectra Colorometer (Photo Research PR650) and compared with the simulated results.     

Andreev quantum dots for spin manipulation

We investigate the feasibility of manipulating individual spin in a superconducting junction where Bogoliubov quasiparticles can be trapped in discrete Andreev levels. We call this system an Andreev quantum dot (AQD) to be contrasted with a common semiconductor quantum dot. We show that the AQD can be brought into a spin-1/2 state. The coupling between the spin and superconducting current facilitates manipulation and measurement of this state. We demonstrate that one can operate two inductively coupled AQDs as a XOR gate; this enables quantum computing applications.     

An improved planar-gate triode with CNTs field emitters by electrophoretic deposition

An improved planar-gate triode with carbon nanotubes (CNTs) field emitters has been successfully fabricated by conventional photolithography, screen printing and electrophoretic deposition (EPD). In this structure, cathode electrodes and ITO arrays linked with gate electrodes were interdigitated and paralleled on the same plane although the gate electrodes and cathode electrodes were isolated by dielectric layer, a so-called improved planar-gate triode structure. An electrophoretic process was developed to selectively deposit CNTs field emitters onto cathode electrodes in the CNTs suspension by an applied voltage between the gate electrodes and cathode electrodes. The optical microscopy and FESEM image showed that the CNTs emitters with the uniform packing density were selectively defined onto the cathode electrodes. In addition, field emission characteristics of an improved planar-gate triode with CNTs field emitters were investigated. The experiment results indicated that the turn-on voltage of this triode structure at current density of 1 μA/cm² was approximately 55 V. The anode current and gate current came to 396 μA and 325 μA, at gate voltage and anode voltage of 100 V and 4000 V, respectively and at the anode-cathode spacing of 2000 μm. The emission image became brighter and the luminous image with dot matrix on the anode plate obviously increased with the increase of the gate voltage. Moreover, the emission current fluctuation was smaller than 5% for 11 h, which indicated that the improved planar-gate triode has a good field emission performance and long lifetime.     

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Considering the strong built-in electric field (BEF), dielectric-constant mismatch and 3D confinement of the electron and hole, the exciton states and interband optical transitions in [0 0 0 1]-oriented Ga-rich wurtzite In_xGa_1−xN/GaN strained quantum dot (QD) nanowire heterostructures are investigated theoretically using a variational approach under the effective mass approximation. We find that the strong BEF gives rise to an obvious reduction of the effective band gap of QDs and leads to a remarkable electron-hole spatial separation. The BEF, QD height and radius, and dielectric mismatch effects have a significant influence on exciton binding energy, electron interband optical transitions, and the radiative decay time. Our calculations show that the radiative decay time of the redshifted transitions is large and increases almost exponentially when the QD height increases, which is in good agreement with the previous experimental and theoretical results.     

Magnetic and optical properties of self-organized InMnAs quantum dots

Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown on high resistivity (1 0 0) p-type GaAs substrates by molecular beam epitaxy (MBE). The presence of ferromagnetic structure was confirmed in the InMnAs diluted magnetic quantum dots. The ten layers of self-assembled InMnAs quantum dots were found to be semiconducting, and have ferromagnetic ordering with a Curie temperature, T_C=80 K. It is likely that the ferromagnetic exchange coupling of sample with T_C=80 K is hole mediated resulting in Mn substituting In and is due to the bound magnetic polarons co-existing in the system. PL emission spectra of InMnAs samples grown at temperature of 275, 260 and 240 °C show that the interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot blueshifts because of the strong confinement effects with increasing growth temperature.