Effects of localized deformation induced by reflector antenna on received power

Based on Gaussian model for reflector antenna, the effects of localized wave-front deformation on received power are researched. It is shown that the received power depends on the deepness h, the radius a, and the distance d of the Gaussian distortion and changes regularly as they increase. Localized deformation has the greatest influence on the received power at the deepness of h ≈ 0.38λ, which does not depend on other distortion parameters. To reduce the impact of localized deformation on the received power, the machining precision of mirrors should be much better than 0.38λ. The maximum power penalty due to the localized distortion with different radii a is given. We hope the results can be used in the design of inter-satellite laser communication systems.     

Highly accurate laser wavelength meter based on Doppler effect

We have built an accurate wavelength meter based on a Michelson interferometer characterized by a high stability velocity moving system. The unknown wavelength is determined from the Doppler frequency shifts of the output beams of the Michelson interferometer. The reference laser is a frequency stabilized helium-neon laser. A counting resolution of 2.6 × 10⁻⁹ for an integration time of 30 s has been obtained. The apparatus has been used to determine the wavelength of a second frequency stabilized helium-neon laser and the result has been compared to those given by two different methods: frequency beating in regards to the national reference and using a commercially available scanning-Michelson wavemeter. Taking into account the statistical errors, we achieved a relative accuracy on the unknown wavelength of 6.4 × 10⁻⁸ at 1σ.     

Impact of electric currents on the insulator-metal phase transition in epitaxial thin films of La1−xAxMnO3 (A = Sr, Ca, and Ba)

The influence of dc currents with a high current density on the transport properties of epitaxial La_1−xA_xMnO₃ (A = Sr, Ca, and Ba) thin films were studied. An application of a large current could lead to a remarkable reduction in the insulator-metal phase transition peak, demonstrating a significant electroresistance effect. After removing such currents the samples could completely return to its pristine state. Our experiments reveal that such an electroresistance should be a common feature for the perovskite manganites, rather than the results caused by the self-heating or self magnetic field. It may be ascribed to the two aspects: one is the strong interaction between carrier spins and localized spins in Mn ions, the other is the percolative mechanism of phase separation.     

Second order gauge theory

A gauge theory of second order in the derivatives of the auxiliary field is constructed following Utiyama’s program. A novel field strength G = ∂F + fAF arises besides the one of the first order treatment, F = ∂A − ∂A + fAA. The associated conserved current is obtained. It has a new feature: topological terms are determined from local invariance requirements. Podolsky Generalized Eletrodynamics is derived as a particular case in which the Lagrangian of the gauge field is L_P ∝ G². In this application the photon mass is estimated. The SU (N) infrared regime is analysed by means of Alekseev-Arbuzov-Baikov’s Lagrangian.     

Demonstration of fundamental mode only propagation in highly multimode fibre for high power EDFAs

The use of short lengths of large core phosphate glass fibre, doped with high concentrations of Er or Er:Yb represents an attractive route to achieving high power erbium doped fibre amplifiers (EDFAs) and lasers (EDFLs). With the aim of investigating the potential of achieving diffraction limited output from such large core fibres, we present experimental results of fundamental mode propagation through a 20 cm length of passive 300 μm core multimode fibre when the input is a well-aligned Gaussian beam. Through careful control of fibre geometry, input beam parameters and alignment, we measured an output M² of 1.1 ± 0.05. The fibre had a numerical aperture of 0.389, implying a V number of 236.8. To our knowledge, this is the largest core fibre through which diffraction limited fundamental mode propagation has been demonstrated. Although the results presented here relate to undoped fibre, they do provide the practical basis for a new generation of EDFAs and EDFLs.     

Enhanced near field mediated nanohole fabrication on silicon substrate by femtosecond laser pulse

Investigation of the process of nanohole formation on silicon surface mediated with near electromagnetic field enhancement in vicinity of gold particles is described. Gold nanospheres with diameters of 40, 80 and 200 nm are used. Irradiation of the samples with laser pulse at fluences below the ablation threshold for native Si surface, results in a nanosized surface modification. The nanostructure formation is investigated for the fundamental (λ = 800 nm, 100 fs) and the second harmonic (λ = 400 nm, 250 fs) of the laser radiation generated by ultrashort Ti:sapphire laser system. The near electric field distribution is analyzed by an Finite Difference Time Domain (FDTD) simulation code. The properties of the produced morphological changes on the Si surface are found to depend strongly on the polarization and the wavelength of the laser irradiation. When the laser pulse is linearly polarized the produced nanohole shape is elongated in the E-direction of the polarization. The shape of the hole becomes symmetrical when the laser radiation is circularly polarized. The size of the ablated holes depends on the size of the gold particles, as the smallest holes are produced with the smallest particles. The variation of the laser fluence and the particle size gives possibility of fabricating structures with lateral dimensions ranging from 200 nm to below 40 nm. Explanation of the obtained results is given on the basis simulations of the near field properties using FDTD model and Mie's theory.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

Nonlinear optical properties of periodic gold nanoparticle arrays

Periodic Au nanoparticle arrays were fabricated on silica substrates using nanosphere lithography. The identical single-layer masks were prepared by self-assembly of polystyrene nanospheres with radius R = 350 nm. The structural characterization of nanosphere masks and periodic particle arrays was investigated by atomic force microscopy. The nonlinear optical properties of the Au nanoparticle arrays were determined using a single beam z-scan method at a wavelength of 532 nm with laser duration of 55 ps. The results show that periodic Au nanoparticle arrays exhibit a fast third-order nonlinear optical response with the nonlinear refractive index and nonlinear absorption coefficient being n₂ = 6.09 × 10⁻⁶ cm²/kW and β = −1.87 × 10⁻⁶ m/W, respectively.     

Calculated influence of work function on SE escape probability and Secondary Electron Emission yield

The influence of changes of the work function, ?, or electron affinity, χ, on the escape probability, A, of Secondary Electrons, SE, is derived from their angular and energy distributions, respectively ∂δ/∂α and ∂δ/∂E_k. Based on the evaluation of the spectral distribution of inner SEs, the present approach quantifies the dominant role of potential barrier on the SE emission and its change with surface treatments or thin film deposits. For instance it is shown that a 1 eV-increase of ? for Au leads to a decrease of A, and then of SE emission yield, δ, of about 50% while a 0.4 eV-increase of χ for potassium chloride induces a decrease of a factor 4 for A and then for the SEE yield δ. These results are summarized by empirical expressions of form A/A° = (?/?°)⁻³ for Au and A/A° =(χ/χ°)^−3/2 for KCl. Applied here to an insulating sample and to a metal, the present approach may be easily transposed to any kind of material of known Fermi energy and work function, metals, or known affinity, semiconducting and insulating samples. The large SEE yield values of inorganic insulators relative to that of metals are explained by larger values of their escape probability A - KCl: A° ∼ 25% for χ° = 0.6 eV; Au: A° ∼ 4% for ?° = 3.5 eV - combined to larger SE attenuation lengths and despite a less SE generation factor. This approach underlines the significant role of A on the large deviations between SEEY data as reported in literature and a strategy combining in situ δ and ? measurements is suggested to partly compensate the corresponding dispersion of experimental results. The present approach may be transposed to other energetic projectiles such as X-rays or ions and some practical consequences related to Scanning Electron Microscopy, mechanisms of contamination and crystalline contrasts, are pointed out.     

Femtosecond Z-scan measurement of third-order optical nonlinearities in anatase TiO2 thin films

Anatase phase TiO₂ films have been grown on fused silica substrate by pulsed laser deposition technique at substrate temperature of 750 °C under the oxygen pressure of 5 Pa. From the transmission spectra, the optical band gap and linear refractive index of the TiO₂ films were determined. The third-order optical nonlinearities of the films were measured by Z-scan method using a femtosecond laser (50 fs) at the wavelength of 800 nm. The real and imaginary parts of third-order nonlinear susceptibility χ⁽³⁾ were determined to be −7.1 × 10⁻¹¹esu and −4.42 × 10⁻¹²esu, respectively. The figure of merit, T, defined by T=βλ/n₂, was calculated to be 0.8, which meets the requirement of all-optical switching devices. The results show that the anatase TiO₂ films have great potential applications for nonlinear optical devices.     

Photoluminescence scanning on InAs/InGaAs quantum dot structures

The photoluminescence spectra of InAs quantum dots (QDs) embedded into four types of In_xGa_1−xAs/GaAs (x = 0.10, 0.15, 0.20 and 0.25) multi quantum well MBE structures have been investigated at 300 K in dependence on the QD position on the wafer. PL mapping was performed with 325 nm HeCd laser (35 mW) focused down to 200 μm (110 W/cm²) as the excitation source. The structures with x = 0.15 In/Ga composition in the In_xGa_1−xAs capping layer exhibited the maximum photoluminescence intensity. Strong inhomogeneity of the PL intensity is observed by mapping samples with the In/Ga composition of x ≥ 0.20-0.25. The reduction of the PL intensity is accompanied by a gradual “blue” shift of the luminescence maximum at 300 K as follows from the quantum dot PL mapping. The mechanism of this effect has been analyzed. PL peak shifts versus capping layer composition are discussed as well.     

Stimulated self-trapped exciton emission in CsI:Pb

Defects of the type of V_K and Pb⁺ centres were created in CsI:Pb under the 4.03 eV XeCl laser line irradiation at 10 K. After irradiation, the self-trapped and localized exciton emission excited by the same XeCl laser line was observed as a result of the recombination of electrons, optically released from Pb⁺, with the V_K centres. A strongly superlinear dependence of the emission intensity on the excitation intensity was found for the 3.65 eV emission of the self-trapped exciton. A much weaker superlinearity was observed for the visible localized exciton emission. Optical amplification of the exciton emission was considered as the most probable reason of the observed phenomenon. At 10 K, optical gain G=3.74 was calculated for the self-trapped exciton emission.     

Influence of electron-electron scattering on electron relaxation rates in three and four-level quantum cascade lasers in magnetic fields

The aim of this work is to calculate carrier relaxation rates from the upper laser level due to electron-electron interactions in three and four-level quantum cascade lasers (QCLs) in a strong magnetic field. The comparison between calculated results and previously obtained values for acoustical and optical-phonon scattering processes indicates that carrier-carrier scattering might have noticeable influence on laser output properties, depending on the structural design. Numerical results are presented for two λ ∼ 9 μm GaAs-based QCLs in magnetic fields between 20 T and 60 T and the band nonparabolicity is taken into account.     

Structural and optical properties of ZnO nanorods grown on MgxZn1−xO buffer layers

ZnO nanorod arrays were synthesized by chemical-liquid deposition techniques on Mg_xZn_1−xO (x = 0, 0.07 and 0.15) buffer layers. It is found that varying the Mg concentration could control the diameter, vertical alignment, crystallization, and density of the ZnO nanorods. The X-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) data show the ZnO nanorods prefer to grow in the (0 0 2) c-axis direction better with a larger Mg concentration. The photoluminescence (PL) spectra of ZnO nanorods exhibit that the ultraviolet (UV) emission becomes stronger and the defect emission becomes weaker by increasing the Mg concentration in Mg_xZn_1−xO buffer layers.     

A combinatorial approach to the discovery and optimization of YCa4O(BO3)3-based luminescent materials

Thin films of YCa₄O(BO₃)₃ (YCOB)-based new luminescent materials were explored by the combinatorial pulsed laser deposition (PLD) method which enabled us to fabricate continuous composition spread film libraries. Strong red and green luminescence were found in the Y_1−xEu_xCOB (0 ≤ x ≤ 1), (YEuCOB) and Y_1−yTb_yCOB (0 ≤ y ≤ 1) (YTbCOB) films, respectively. The film libraries were characterized by photoluminescence (PL), PL decay, an electron-probe microanalyzer and an electron diffraction analysis. The luminescent intensities in the amorphous film libraries strongly depended on the chemical composition of each rare-earth (RE) ion. The optimum concentration of rare-earth ions in YEuCOB and YTbCOB were experimentally determined to be Eu = 7.5% and Tb = 20-30%, respectively.     

Influence of ordering change on the optical and thermal properties of inflation polyethylene films

Changes of thermal diffusivity inside femtosecond laser-structured volumes as small as few percent were reliably determined (with standard deviation less than 1%) with miniaturized sensors. An increase of thermal diffusivity of a crystalline high-density polyethylene (HDPE) inflation films by 10-20% from the measured (1.16 ± 0.01) × 10⁻⁷ m² s⁻¹ value in regions not structured by femtosecond laser pulses is considerably larger than that of non-crystalline polymers, 0-3%. The origin of the change of thermal diffusivity are interplay between the laser induced disordering, voids’ formation, compaction, and changes in molecular orientation. It is shown that laser structuring can be used to modify thermal and optical properties. The birefringence and infrared spectroscopy with thermal imaging of CH₂ vibrations are confirming inter-relation between structural, optical, and thermal properties of the laser-structured crystalline HDPE inflation films. Birefringence modulation as high as Δn ∼ ± 1 × 10⁻³ is achieved with grating structures.     

High-pressure and optical properties of lanthanum magnesium hexa-aluminate doped with Mn (LMA:Mn) laser material

The effect of hydrostatic pressure on the emission spectra and fluorescence lifetime (τ) of Mn²⁺ in LaMgAl₁₁O₁₉ (LMA) crystals up to 101 kbar has been studied at room temperature. From the position of the peak (⁴T₁ → ⁶A₁ transition) in the emission spectra, we estimated that the pressure induced red-shift. A variation, slowly decreasing, in the fluorescence lifetime (τ) values for ⁴T₁ → ⁶A₁ transition was observed. The pressure-induced red-shift and lifetime variation could be described by simple models. In the considered pressure range (0-101 kbar), a good agreement between the experimental values and theoretically predicted values was obtained.     

Enhanced photo-response of thin-film structures with nanocrystals

Thin-film multilayers with dielectric and semiconductor nanolayers of 200-10 nm thicknesses have been deposited by thermal evaporation onto irradiation-resistive substrates using pure crystals as evaporated targets. Some multilayers were γ-irradiated in air at room temperature with dose of 83 kGy. X-ray diffraction and microscopy studies reveal that the multilayers consist of nanometer-sized crystals with cubic structure and defined size. Film structures were oriented along the (1 1 1) plane. Absorption spectra of non-irradiated LiF nanocrystals of 100 nm size and those of initial crystals give evidence of metal colloids presence. Photoluminescence spectra of γ-irradiated nanostructures with various LiF content show the enhancement of F₃⁺-colour centres excitation in the region of metal colloids absorption and the increase is observed between emission intensities of F₃⁺ and F₂ centers with respect to initial crystals γ-coloured in identical conditions. Emission intensities of both centers under excitation in the M band correlate with LiF content. These effects, which are related to high-quality nanocrystals, but at the same time depend strongly on the defect content, especially as far as their 1-2 ps nonlinearities are concerned, could depend on nanocrystal purity and metal excess collection in their boundaries regions.     

Femtosecond laser embedded grating micromachining of flexible PDMS plates

We report on the femtosecond laser micromachining of photo-induced embedded diffraction grating in flexible Poly (Dimethly Siloxane) (PDMS) plates using a high-intensity femtosecond (130 fs) Ti: sapphire laser (λ_p = 800 nm). The refractive index modifications with diameters ranging from 2 μm to 5 μm were photo-induced after the irradiation with peak intensities of more than 1 × 10¹¹ W/cm². The graded refractive index profile was fabricated to be a symmetric around from the center of the point at which femtosecond laser was focused. The maximum refractive index change (Δn) was estimated to be 2 × 10⁻³. By the X-Y-Z scanning of sample, the embedded diffraction grating in PDMS plate was fabricated successfully using a femtosecond laser.     

Nonlinear mixing between the emission of a cw laser and a femtosecond laser

We mix the emission of a femtosecond Ti:sapphire laser with the emission of a continuous wave infrared laser in a beta-barium borate crystal. Green light with a center wavelength of 527 nm and a spectral width of 2.5 nm resulting from sum frequency generation is detected. An intensity study verifies that a nonlinear χ⁽²⁾ process is at the origin of the green light generation. The experimentally obtained conversion efficiency of 7 × 10⁻¹⁰ is in good agreement to simple theoretical considerations.