Disorder-dependent photoluminescence in Ba0.8Ca0.2TiO3 at room temperature

The photoluminescence (PL) emission in structurally disordered Ba_0.8Ca_0.2TiO₃ (BCT20) powders was observed at room temperature with laser excitation at lines 355 and 460 nm. The structural evolution perovskite-like titanate BCT20 powders prepared by a soft chemical processing at different annealing temperatures were accompanied by X-ray diffraction (XRD) and X-ray absorption near-edge structure (XANES). Intermediate oxycarbonate phase was identified and your influence with PL emission was discarding. BCT20 annealed at 500 °C displays intense PL emission. The results indicate relationship between broad PL band and order-disorder degree.     

Luminescence studies of a combustion-synthesized blue–green BaAlxOy:Eu,Dy nanoparticles

Blue–green emitting BaAl_xO_y:Eu²⁺,Dy³⁺ phosphor was synthesized by the combustion method. The influence of various parameters on the structural, photoluminescence (PL) and thermoluminescence (TL) properties of the phosphor were investigated by various techniques. Phosphor nanocrystallites with high brightness were obtained without significantly changing the crystalline structure of the host. In the PL studies, broad-band excitation and emission spectra were observed with major peaks at 340 and 505 nm, respectively. The observed afterglow is ascribed to the generation of suitable traps due to the presence of the co-doped Dy³⁺ ions. Though generally broad, the peak structure of the TL glow curves obtained after irradiation with UV light was non-uniform with suggesting the contribution to afterglow from multiple events at the luminescent centers. Further insight on the afterglow behavior of the phosphor was deduced from TL decay results.     

Interdot carrier transfer in semimagnetic Pb1−xMnxSe nanocrystals embedded in oxide glass

Temperature- and excitation-intensity-dependent photoluminescence (PL) spectra of semimagnetic Pb_1−xMn_xSe nanocrystals embedded in glass matrix have been studied. Two types of dot families with different sizes and dispersions were identified by spectral deconvolution in Gaussian components with different full widths at half maxima values. Temperature induced carrier-transfer interdots are responsible for the sigmoidal temperature dependence of the higher PL peak energy and for anomalous enhanced photoluminescence emission efficiency, at low temperatures. The activation energy of nonradiative channel responsible for a strong thermal quenching, at T>80 K, is deduced from an Arrhenius plot of integrated PL intensity.     

Temperature-dependence of the structural and afterglow luminance properties of polymer/SrAlxOy:Eu,Dy composites

Although aluminate phosphors have attracted great interest for applications in lamps, cathode ray tubes and plasma display panels, there still remain issues affecting operational parameters such as luminescence efficiency, stability against temperature, high color purity and perfect decay time. In addition, issues involving important aspects of the monoclinic↔hexagonal phase transition temperature still exist. In this work, SrAl_xO_y:Eu²⁺,Dy³⁺ phosphor powders were prepared by the sol–gel method. X-ray diffraction (XRD) has shown that both crystallinity and crystallite sizes increased as the temperature increased. Both SrAl₂O₄ and Sr₂Al₃O₆ phases were observed. Photoluminescence (PL) characterization shows temperature-dependence, which indicates emission at low and high annealing temperatures originating from Eu²⁺ and Eu³⁺ ions. Thermoluminescence glow and decay measurements provided useful insight on the influence of traps on luminescence behavior. Differential scanning calorimetry (DSC) and thermogravimetric studies (TGA) on composites of the phosphor in low density polyethylene (LDPE) demonstrated the varied influence of annealing temperature on some luminescence and thermal properties.     

Large enhancement of photoluminescence in SrTiO3:Pr powders by fluorhydric acid treatment

We have investigated the effect of fluorhydric acid (HF) treatment on the photoluminescence (PL) properties of SrTiO₃:Pr³⁺ powders prepared by sol-gel method. The red emission intensity increased significantly up to 18 times when the powders were subjected into a water-diluted 5% HF solution for 10 min. The origin of the PL enhancement was ascribed to the increase of oxygen vacancies in HF-treated SrTiO₃:Pr³⁺ powders. This study also manifested that HF etching is more effective to improve the red PL intensity than vacuum-annealing for the sol-gel made SrTiO₃:Pr³⁺ powders.     

Photoluminescence of Eu-doped CaMgSi2xO6+2x (1.00?x?1.20) phosphors in UV-VUV region

Alkaline-earth silicate phosphors CaMgSi_2xO_6+2x:Eu²⁺ (1.00?x?1.20) were prepared by traditional solid-state reaction. The phosphors showed an intense blue emission centered around 453 nm, with both 254 and 147 nm excitations. The host absorption below 200 nm in the excitation spectra consisted of two bands around 160 and 190 nm. The band around 160 nm was ascertained to be associated with the SiO₄-tetrahedra and MgO₆-polyhedra, and that around 190 nm was due to the CaO₈-polyhedra or some impurities. The incorporation of excess Si of less than 15% would not lead to formation of impurities and the results indicated that an appropriate Si excess could improve the Photoluminescence (PL) intensity in both ultraviolet (UV) and vacuum ultraviolet (VUV) regions     

Luminescent properties of HTP AgGd1−xW2O8:Eux and AgGd1−x(W1−yMoy)2O8:Eux phosphor for white LED

Intense red phosphors, AgGd_1−xEu_x(W_1−yMo_y)₂O₈ (x=0.0-1.0, y=0.0-1.0), have been synthesized through traditional solid-state reaction and characterized by X-ray diffraction (XRD) and photoluminescence (PL). XRD results reveal that AgGd_1−xEu_xW₂O₈ synthesized at 1000 °C has a tetragonal crystal structure, which is named as high temperature phase (HTP) AgGdW₂O₈. All phosphors compositions with Eu³⁺ show red and green emission on excitation either in the charge-transfer or Eu³⁺ levels. Analysis of the emission spectra with different Eu³⁺ concentrations reveal that the optimum dopant concentration for Eu³⁺ is x=0.6 in the HTP AgGd_1−xEu_xW₂O₈ (x=0.0-1.0). Studies on the AgGd_0.4Eu_0.6(W_1−yMo_y)₂O₈ (y=0.0-1.0) and AgGd_1−xEu_x(W_0.7Mo_0.3)₂O₈ (x=0.0-1.0) show that the emission intensity is maximum for compositions with y=0.3 and x=0.5, respectively, and a decrease in emission intensity is observed for higher y or x values. The Mo⁶⁺ and Eu³⁺ co-doped AgGd(WO₄)₂ phosphors show higher emission intensity in comparison with the singly Eu³⁺-doped AgGd(WO₄)₂ in UV region. The intense emission of the tungstate/molybdate phosphors under 394 and 465 nm excitations, respectively, suggests that these materials are promising candidates as red-emitting phosphors for near-UV/blue GaN-based white LED for white light generation.     

Structural and optical properties of an InxGa1−xN/GaN nanostructure

The structural and optical properties of an In_xGa_1−xN/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence (PL). The MQW structure was grown on c-plane (0 0 0 1)-faced sapphire substrates in a low pressure metalorganic chemical vapor deposition (MOCVD) reactor. The room temperature photoluminescence spectrum exhibited a blue emission at 2.84 eV and a much weaker and broader yellow emission band with a maximum at about 2.30 eV. In addition, the optical gaps and the In concentration of the structure were estimated by direct interpretation of the pseudo-dielectric function spectrum. It was found that the crystal quality of the InGaN epilayer is strongly related with the Si doped GaN layer grown at a high temperature of 1090 °C. The experimental results show that the growth MQW on the high-temperature (HT) GaN buffer layer on the GaN nucleation layer (NL) can be designated as a method that provides a high performance InGaN blue light-emitting diode (LED) structure.     

Effects of Tb doping on the photoluminescence of Y2O3:Tb nanophosphors

The effects of Tb doping on the photoluminescence (PL) of Y₂O₃:Tb nanophosphors have been investigated. Nanophosphors were prepared by the glycine-nitrate solution combustion technique using yttria and terbia powders as precursors. PL excitation spectra at room temperature consist of two overlapping bands centered at 277 and 304 nm, whereas emission spectra comprise several groups of lines corresponding to the ⁵D₄→⁷F_J (J=1-6) 4f electronic transitions of the Tb⁺³ ions. A direct comparison of nanophosphor and bulk concentration-quenching curves was obtained by annealing the nanophosphor powder and converting it to bulk material without altering the Tb concentration. The peak in the nanophosphor concentration-quenching curve occurs at a concentration ∼3 times higher than that of the bulk.     

Effect of sintering atmosphere on the electrical and optical properties of (ZnO)1−x(MnO2)x NTCR ceramics

Nominal composition of (ZnO)_1−x(MnO₂)_x (0.005≤x≤0.2) ceramics have been prepared by the standard solid-state reaction method in three different sintering atmospheres: Ar, air, and reductive atmosphere. The effect of sintering atmosphere on the electron spin resonance (ESR), negative temperature coefficient of resistivity (NTCR), and photoluminescence (PL) properties of (ZnO)_1−x(MnO₂)_x ceramics has been investigated in detail. The results demonstrate that the sintering atmosphere has significant effects on the ESR signals of (ZnO)_1−x(MnO₂)_x; the NTCR of the samples sintered in air is larger than those sintering in Ar and reductive atmosphere; the deep-level PL related to oxygen vacancy increases when sintered in the reductive atmosphere.     

Effect of substrate temperature on the morphology, structural and optical properties of Zn1−xCoxO thin films

Zn_1−xCo_xO thin films with c-axis preferred orientation were deposited on sapphire (0 0 0 1) by pulsed laser deposition (PLD) technique at different substrate temperatures in an oxygen-deficient ambient. The effect of substrate temperature on the microstructure, morphology and the optical properties of the Zn_1−xCo_xO thin films was studied by means of X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible-NIR spectrophotometer, fluorescence spectrophotometer. The results showed that the crystallization of the films was promoted as substrate temperature rose. The structure of the samples was not distorted by the Co incorporating into ZnO lattice. The surface roughness of all samples decreased as substrate temperature increased. The Co concentration in the film was higher than in the target. Emission peak near band edge emission of ZnO from the PL spectra of the all samples was quenched because the dopant complexes acted as non-radiative centers. While three emission bands located at 409 nm (3.03 eV), 496 nm (2.5 eV) and 513 nm (2.4 eV) were, respectively, observed from the PL spectra of the four samples. The three emission bands were in relation to Zn interstitials, Zn vacancies and the complex of V_O and Zn_i (V_OZn_i). The quantity of the Zn interstitials maintained invariable basically, while the quantity of the V_OZn_i slightly decreased as substrate temperature increased.     

Influence of calcining temperature on photoluminescence and thermal quenching in europium-doped Y2SiO5 using the MOD process

The crystalline Eu_0.25Y_1.75SiO₅ (EYSO) fine powders were prepared using metallorganic decomposition process, in which the pure X₁- and X₂-Y₂SiO₅ phases were obtained by calcining at temperatures from 850°C to 1600°C. The influence of calcining temperature on photoluminescence (PL) and thermal quenching were systematically investigated from room temperature to 573 K for the first time. As a consequence, the X₂-EYSO was higher in light emission intensities than the X₁-EYSO, but the X₁-EYSO possessed better temperature dependence of PL. The phase structure had a significant effect on the light emission intensity and energy as well as its temperature characteristics in the EYSO.     

Study on the structure and optical property of Zn1−xCuxO sol–gel thin films on quartz substrate

Zn_1−xCu_xO thin films (x=0, 1.0, 3.0, 5.0%) are prepared on quartz substrate by sol–gel method. The structure and morphology of the samples are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results show that Cu ions were effectively penetrated into the ZnO crystal lattices with substitutional and interstitial impurities to form stable solid solutions without changing the polycrystalline wurtzite structure. Two peaks at 420 nm (2.95 eV, violet), 485 nm (2.56 eV, blue) have been observed from the photoluminescence (PL) spectra of the samples. It is concluded that the violet peak may correspond to the exciton emission; the blue emission corresponds to the electron transition from the bottom of the conduction band to the acceptor level of zinc vacancy. The optical test shows that the optical band gap E_g is decreased with the increase amount of Cu doping in ZnO. The band gap decrease from 3.40 eV to 3.25 eV gradually. It is also found that the transmission rate is increased rapidly with the increase of Cu ions concentration.     

Blue-green and red photoluminescence in CaTiO3:Sm

Blue-green and red photoluminescence (PL) emission in structurally disordered CaTiO₃:Sm (CT:Sm) powders was observed at room temperature with laser excitation at 350.7 nm. The perovskite-like titanate CT:Sm powders prepared by a soft chemical processing at different temperatures of annealing were structurally characterized by X-ray diffraction (XRD) and X-ray absorption near-edge structure (XANES). The results indicate that the generation of the broad PL band is related to order-disorder degree in the perovskite-like structure.     

Enhanced optical activation of Er in Er-doped Al2O3 powders by Y codoping in a sol-gel method

Enhanced photoluminescence (PL) mechanism of Er³⁺-doped Al₂O₃ powders by Y³⁺ codoping at wavelength 1.53 μm has been investigated through PL measurements of 0.1 mol% Er³⁺- and 0-20 mol% Y³⁺-codoped Al₂O₃ powders prepared at a sintering temperature of 900 °C in a non-aqueous sol-gel method. PL intensity and lifetime of Er³⁺-Y³⁺-codoped Al₂O₃ powders composed of γ-(Al,Er,Y)₂O₃ and θ-(Al,Er,Y)₂O₃ phases increased with increasing Y³⁺-codoping concentration. The 10-20 mol% Y³⁺ codoping in 0.1 mol% Er³⁺-doped Al₂O₃ powders intensified the PL intensity by about 20 times, with a PL lifetime prolonged from 3.5 to 5.8 ms. A maximal increase of the optical activity of Er³⁺ in 0.1 mol% Er³⁺-Y³⁺-codoped Al₂O₃ powders about one order was achieved by 10-20 mol% Y³⁺ codoping. It is found that the improved PL properties for Er³⁺-Y³⁺-codoped Al₂O₃ powders are mainly attributed to enhanced optical activation of Er³⁺ in the Al₂O₃ by Y³⁺ codoping, and to the slightly increased radiative quantum efficiency of Er³⁺ in the Al₂O₃.     

Er3+掺杂SiO2复合的Al2O3粉末结构及光致发光特性

采用溶胶-凝胶(sol-gel)工艺制备0.1 mol% Er³⁺掺杂Al₂O₃体系和SiO₂-Al₂O₃复合体系粉末. 实验结果表明：5 mol%的SiO₂复合加入Al₂O₃抑制γ→θ和θ→α相转变. 掺0.1 mol%Er³⁺:Al₂O₃体系粉末，900℃烧结，在1.47—1.63μm波段内光致发光(PL)谱为中心波长1.53 μm、半高宽56 nm的单一宽峰，1000—1200℃烧结，劈裂为多峰PL谱. 掺0.1 mol%Er³⁺:SiO₂-Al₂O₃复合体系粉末，在高达1200℃烧结，仍保持中心波长1.53 μm的单一宽峰PL谱，由于—OH更完全的脱除，PL强度较900℃烧结Al₂O₃体系，SiO₂-Al₂O₃复合体系均提高1个数量级. 关键词： 2-Al₂O₃复合体系')" href="#">SiO₂-Al₂O₃复合体系 掺铒 溶胶-凝胶工艺 光致发光     

Fabrication and characterization of Zn1−xAlxO nanoparticles by DC arc plasma

In this paper we have introduced a simple method for the fabrication of aluminum doped zinc oxide (AZO) nanoparticles. The Zn_1−xAl_xO nanoparticles with different concentrations of Al (x=0.01, 0.03, 0.06, 0.09, 0.12) were fabricated successfully by this method. The samples were analyzed by the use of several techniques such as SEM, EDX, XRD, PL and UV-vis spectroscopy. The SEM images showed that the fabricated nanoparticles had spherical shapes. The XRD patterns of the samples indicated that the Al atoms substituted in the Zn positions in the crystal lattice of ZnO and there were some changes in the lattice parameters. A blue shift in the λ_max of the absorption and a red shift in the λ_max of the emission were observed. The results also indicated that the amount of shifts had a direct relationship with the changes in the lattice parameters.     

Structure and photoluminescence properties of Er3+-doped TiO2-SiO2 powders prepared by sol-gel method

Er 3+-doped TiO 2-SiO 2 powders are prepared by the sol-gel method,and they are characterized by high resolution transmission electron microscopy (HR-TEM),X-ray diffraction (XRD) spectra,and Raman spectra of the samples.It is shown that the TiO 2 nanocrystals are surrounded by an SiO 2 glass matrix.The photoluminescence (PL) spectra are recorded at room temperature.A strong green luminescence and less intense red emission are observed in the samples when they are excited at 325 nm.The intensity of the emission,which is related to the defect states,is strongest at the annealing temperature of 800 C.The PL intensity of Er 3+ ions increases with increasing Ti/Si ratio due to energy transfer between nano-TiO 2 particles and Er 3+ ions.     

Optical properties of MgxZn1−xO thin films deposited on silicon and sapphire substrate by rf magnetron sputtering

The index dispersion at UV–VIS range for polycrystalline Mg_xZn_1−xO films on silicon with different Mg concentration was obtained by spectroscopic ellipsometry (SE) method. It decreases with the increase of the Mg content. Above the relative peak wavelength, they are well fitted by the first-order Sellmeier relation. The band gap of films on sapphire of different Mg content was determined from transmission measurements. Photoluminescence (PL) illustrated that for Mg_xZn_1−xO films every PL peak corresponded to a special excitation wavelength. The wavelength of the PL peak was proportional to the special excitation wavelength. A strong peak was obtained in the blue band for the films due to the large amount of oxygen vacancies caused by excess Zn and Mg atoms, while weak peak at ultraviolet band.     

Photoluminescence and excitation spectra of Cu(AlxGa1−x)S2 films grown by vapor phase epitaxy

Chalcopyrite Cu(Al_xGa_1−x)S₂ alloy films were successfully grown on GaP substrates by vapor phase epitaxy using metallic chlorides (CuCl, GaCl₃ and AlCl₃) and H₂S as source materials. Photoluminescence (PL) spectra of these films taken under a low excitation density using a super high pressure Hg lamp exhibited broad emissions in the orange region. Photoluminescence excitation (PLE) measurements revealed that these broad emissions are effectively excited at the photon energies of A- and the BC-exciton energies. Under the high excitation density using the pulsed XeCl laser, these alloy films showed the exciton related emissions composed of biexciton recombination, exciton-exciton and exciton-carrier scatterings. The influence of the compositional fluctuation was observed on the increase of the full-width at half maximum (FWHM) for the exciton related emission with increase in composition of x.