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1.
We demonstrate a passively Q-switched Nd:LuVO4 laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively.  相似文献   

2.
Simultaneous self-Q-switched and mode-locked have been demonstrated in a diode-pumped Nd,Cr:YAG laser. For the first time as we know, almost 100% modulation depth has been achieved at an intracavity intensity of 5.6 × 105 W/cm2. The maximum average output power of 6.52 W corresponding to a slope efficiency of 30% is obtained at 1064 nm. The laser produces high-quality pulses in a TEM00-mode at the pump power of 16.5 W. The pulse duration of the mode-locked pulses is about 600 ps with 136 MHz repetition rate.  相似文献   

3.
The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.  相似文献   

4.
We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO4 laser working at 1342 nm by using an uncoated V3+:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO4 crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO4 crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO4 crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO4 laser can generate shorter pulse with higher peak power in comparison with a-cut one.  相似文献   

5.
An active Q-switched diode-end-pumped Nd:YAG laser is reported with 2.9 W output power on the 4F3/2 → 4I9/2 transitions at a pump power of 24 W. With intracavity frequency doubling using a 20-mm-long LBO, a maximum blue output power of 2.25 W is achieved at a repetition rate of 23 kHz. The conversion efficiency from the corresponding Q-switched fundamental output to blue output is 96%. The peak power of the Q-switched blue pulse is up to 610 W with 160 ns pulse width. The fluctuation of the blue output power is less than 4.0% at the maximum output power.  相似文献   

6.
A laser diode end-pumped 10 at.% doped Yb:YAG microchip crystal intracavity frequency doubled all solid-stated green laser is reported in this paper. Using one plano-concave resonator, with the pump power of 1.2 W, 44.2 mW TEM00 continuous wave (CW) laser at 525 nm was obtained, the optical conversion efficiency was about 3.7%. When a Cr:YAG crystal with initial transmission of 95.5% inserted in the resonator, the maximum output power of 6.4 mW, pulse duration width of 49.1 ns, pulse repetition rate of 2.45 kHz, and peak power of 53.1 W at 515 nm were achieved when the pump power was 1.2 W. The wavelength changed from 525 nm to 515 nm and the threshold was only 725 mW.  相似文献   

7.
A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO4 laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr4+:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (TU) of the saturable absorber on the QML laser performance was investigated. Using the TU = 95% Cr4+:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~ 224 kHz and ~ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the TU = 90% Cr4+:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.  相似文献   

8.
A diode-pumped passively Q-switched Nd:YAG/SrWO4/KTP yellow laser is presented for the first time. As high as 1.02 W average output power was obtained at a pump power of 14.0 W with a pulse repetition frequency of 21.9 kHz and the corresponding diode-to-yellow conversion efficiency was 7.29%. The highest pulse energy of 56.2 μJ was obtained at a pump power of 7.2 W.  相似文献   

9.
A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 106 W/cm2. Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM00-mode in the simultaneous self-Q-switched and mode-locked experiment.  相似文献   

10.
We report on a diode pumped passively Q-switched Nd:Gd0.64Y0.36VO4 laser with a Cr4+:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.  相似文献   

11.
We report a compact, conduction-cooled, highly efficient, continuous wave (CW) Nd:YAG slab laser in diode-side-pumped geometry. To achieve high efficiency, a novel laser head for Nd:YAG slab has been developed. For an absorbed pump power of 27.6 W, maximum output power of 10.4 W in multimode and 8.2 W in near-diffraction-limited beam quality has been obtained. Slope and optical-to-optical conversion efficiencies are 45.3% and 37.7% in multimode with beam quality factors (M2) in x and y directions equal to 32 and 8, respectively. TEM00 mode operation was achieved in a hybrid resonator with slope and optical-to-optical conversion efficiencies of 43.2% and 29.7%, respectively. Beam quality factors in x and y directions are ?1.5 and ?1.6 for the whole output power range. The laser radiation was linearly polarized and polarization contrast ratios are >1200:1 in the multimode and 1800:1 in the TEM00 mode operation. In passive Q-switching with Cr4+:YAG crystal of 68% initial transmission, 18 ns pulsewidth has been achieved with an average power of 2 W at a repetition rate of 16 kHz.  相似文献   

12.
We demonstrate high-efficiency diode-end-pumped multi-wavelength Nd:YAG lasers for continuous-wave and Q-switched operation. For the continuous-wave case, the Nd:YAG laser oscillates at 1.06 and 1.3 μm simultaneously; the maximum output power of 2.0 W (M2 = 1.3) and 3.6 W (M2 = 1.8) have been achieved at the incident pump power of 20.3 W, with the respective average slope efficiencies of 12.0% and 21.4%, for the lines of 1.06 and 1.3 μm, respectively. For the Q-switched operation, we achieve the average output power of 1.3 W (M2 = 2.7) at 1.06 μm and 2.0 W (M2 = 3.0) at 1.3 μm with the corresponding peak power of 10.2 and 4.2 kW under an incident pump power of 20.3 W.  相似文献   

13.
We present theoretical and experimental investigations on ground-state direct pumping at 869 nm into the emitting level 4F3/2 of end-pumped quasi-three-level Nd:YAG lasers operating at 946 nm. We have demonstrated, what we believe is for the first time, a Nd:YAG laser at 946 nm directly pumped by diodes and obtained 1.6 W of output power.  相似文献   

14.
A diode-end-pumped passively Q-switched 912 nm Nd:GdVO4/Cr4+:YAG laser and its efficient intracavity frequency-doubling to 456 nm deep-blue laser were demonstrated in this paper. Using a simple V-type laser cavity, pulsed 912 nm laser characteristics were investigated with two kinds of Cr4+:YAG crystal as the saturable absorbers, which have the different initial transmissivity (TU) of 95% and 90% at 912 nm. When the TU = 95% Cr4+:YAG was used, as much as an average output power of 2.8 W 912 nm laser was achieved at an absorbed pump power of 34.0 W, and the pulse width and the repetition rate were ∼ 40.5 ns and ∼ 76.6 kHz, respectively. To the best of our knowledge, this is the highest average output power of diode-pumped passively Q-switched Nd3+-doped quasi-three-level laser. Employing a BiBO as the frequency-doubling crystal, 456 nm pulsed deep-blue laser was obtained with a maximum average output power of 1.2 W at a repetition rate ∼ 42.7 kHz.  相似文献   

15.
A compact high power diode-side-pumped Nd:GdVO4 laser has been presented, which can generate an output power of 52 W at 1.063-μm for continuous-wave (CW) operation. The absorption characteristics of the Nd:GdVO4 in different pump directions is measured, which were used to optimize the diode-side-pumped Nd:GdVO4 laser head. The laser characteristics of both CW and Q-switched Nd:GdVO4 and Nd:YAG in are compared and it was found that Nd:GdVO4 may surpass Nd:YAG for high power laser application.  相似文献   

16.
A diode end-pumped passively Q-switched Nd: Y0.8Lu0.2VO4 laser with a Cr4+: YAG crystal is first demonstrated in this paper. The maximum continuous wave (CW) output power of 5.59 W is obtained at the incident pump power of 13.07 W with the output transmission T = 20%, resulting in an optical-to-optical efficiency of 42.7%. For Q-switching operation, the measured pulse duration of 8.5 ns, the pulse energy of 45.24 μJ and the peak power of 5.32 kW are respectively obtained for the output transmission of 50% when the Cr4+: YAG crystal is used with an initial transmission (T0) of 60%.  相似文献   

17.
An efficient continuous-wave (CW) simultaneous dual-wavelength lasing (SDWL) of an LD end-pumped Nd:YAG laser utilizing a quasi-three-level transition at 946 nm and a four-level transition at 1064 nm is reported. A theoretical model has been introduced to determine the threshold conditions for SDWL. The temperature distributions of a Nd:YAG crystal under different pump powers have been analyzed. In the experiments, a CW SDWL output power of 5.12 W at a temperature of 273 K has been achieved with a pump power of 17 W, giving a slope efficiency of 16.36%.  相似文献   

18.
This paper reported a passively Q-switched green laser of LD pumped linear cavity structure by using Nd:YAG/Cr4+:YAG composite crystal and the type II phase matching KTP crystal. The dependence of average output power, pulse width and pulse repetition rate on pump power at different initial transmissions of Cr4+:YAG were measured and analyzed. With Cr4+:YAG of 80% initial transmission, under pump power of 13.97 W, the output average power is up to 681 mW, with pulse width of 200 ns and pulse repetition rate of 9.1 kHz. The laser operates in a fundamental mode.  相似文献   

19.
Combining the advantages of diode-end-pumped Nd: YVO4 and diode-side-pumped Nd: YAG amplifiers, a high average power and high beam quality picosecond laser is designed. The system delivers a picosecond laser with average power of 43.4 W and good beam quality of M2 < 1.7. By focusing the high power picosecond laser in LBO crystal, 532 nm green laser with maximal power of 20.8 W is generated and the conversion efficiency of second-harmonic generation reaches 56.4% when 17.7 W green laser obtained from the fundamental frequency laser with power of 31.4 W and beam quality of M2 < 1.25.  相似文献   

20.
Laser performance with the mixed Nd:Lu0.15Y0.85VO4 crystal at 1.34 μm wavelength has been demonstrated. The continuous wave (cw) operation was carried out in a simple plano-concave resonator with an optical conversion efficiency of 23% and a slop efficiency of 25%. At a pump power of 6.78 W, the Q-switched pulses with the largest average output power of 349 mW, the shortest pulse width of 30.6 ns, the largest repetition rate of 42.5 kHz, the highest peak power of 268 W and the largest pulse energy of 8.2 μJ were obtained, corresponding to the V:YAG with initial transmission of 89%.  相似文献   

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