CuPc molecules adsorbed on Au(1 1 0)-(1 × 2): growth morphology and evolution of valence band states

We present the growth morphology, the long-range ordering, and the evolution of the valence band electronic states of ultrathin films of copper phthalocyanine (CuPc) deposited on the Au(1 1 0)-(1 × 2) reconstructed surface, as a function of the organic molecule coverage. The low energy electron diffraction patterns present a (5 × 3) reconstruction from the early adsorption stages. High-resolution UV photoelectron spectroscopy data show the disappearance of the Au surface states related to the (1 × 2) reconstruction, and the presence of new electronic features related to the molecule-substrate interaction and to the CuPc molecular states. The CuPc highest occupied molecular orbital gradually emerges in the valence band, while the interface electronic states are quenched, upon increasing the coverage.     

Electron and lattice structure of ultra thin Ag films on Si(1 1 1) and Si(0 0 1)

We studied the low temperature (T ? 130 K) growth of Ag on Si(0 0 1) and Si(1 1 1) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated by means of XPS, UPS, LEED, STM and STS. Surprisingly a (√3 × √3)R30° LEED structure for Ag films has been observed after deposition of 2-6 ML Ag onto a Si(1 1 1)(√3 × √3)R30°Ag surface at low temperatures. XPS investigations showed that these films are solid, and UPS measurements indicate that they are metallic. However, after closer STM studies we found that these films consists of sharp Ag islands and (√3 × √3)R30°Ag flat terraces in between. On Si(0 0 1) the low-temperature deposition yields an epitaxial growth of Ag on clean Si(0 0 1)-2 × 1 with a twinned Ag(1 1 1) structure at coverage’s as low as 10 ML. Furthermore the conductivity of few monolayer Ag films on Si(1 0 0) surfaces has been studied as a function of temperature (40-300 K).     

Anchoring sulphur-headgroup organic molecules at Cu(1 0 0): Tailoring the interface electronic states

Sulphur-headgroup organic molecules have been chemisorbed on Cu(1 0 0) as self-assembled monolayers (SAMs) in highly-ordered two-fold symmetry structures, and the electronic states induced at the interface have been measured by photoemission: a close similarity of the main interface states for methane-thiolate and mercaptobenzoxazole on Cu(1 0 0) in the same p(2 × 2)-phase is observed. The bonding states for methane-thiolate/Cu(1 0 0) in the p(2 × 2) and c(2 × 2) structures have been compared to ab-initio calculation of the total density of states (DOS) for the S/Cu(1 0 0) system in the same phases. The major role of the S-Cu bonding to determine the density of state evolution at the interface is brought to light. The observed differences in the two phases depend mainly on the charge distribution associated to the different molecular packing, with a minor role of the radical group.     

Etching of silicon nanowires on Ag(1 1 0) by atomic hydrogen

Scanning Tunnelling Microscopy, High Resolution Electron Energy Loss Spectroscopy and High Resolution X-Ray Photoelectron Spectroscopy have been used to study the adsorption of atomic hydrogen onto Si nanowires grown on Ag(1 1 0). We demonstrate that the hydrogen strongly interacts with the Si nanowires modifying their structural and electronic properties. Hydrogen atoms etch the Si nanowires and eventually lead to their complete removal from the Ag(1 1 0) surface.     

Surface and subsurface oxide formation on Ni(1 0 0) and Ni(1 1 1)

The oxidation of Ni(1 0 0) and Ni(1 1 1) at elevated temperatures and large oxygen exposures, typical of the methods used in the preparation of NiO(1 0 0) films for surface studies, has been investigated by medium energy ion scattering (MEIS) using 100 keV H⁺ incident ions. Oxide film growth proceeds significantly faster on Ni(1 1 1) than on Ni(1 0 0), but on both surfaces oxide penetration occurs to depths significantly greater than 100 Å with total exposures of 1200 and 6000 L respectively. The metal/oxide interface is extremely rough, with metallic Ni extending to the surface, even for much thicker oxide films on Ni(1 1 1). On Ni(1 1 1), NiO growth occurs with the (1 0 0) face parallel to the Ni(1 1 1) surface and the close-packed 〈1 1 0〉 directions parallel. On Ni(1 0 0) the MEIS blocking curves cannot be reconciled with a single orientation of NiO(1 0 0) (with the 〈1 1 0〉 directions parallel) on the surface, but is consistent with the substantial orientational disorder (including tilt) previously identified by spot-profile analysis LEED.     

Diffusion properties of Cu(0 0 1)-c(2 × 2)-Pd surface alloys

Structural and diffusion properties of a Cu(0 0 1)-c(2 × 2)-Pd surface and sub-surface ordered alloys are studied by using interaction potentials obtained from the embedded-atom method. The calculated diffusion energies are in agreement with observed kinetics of the surface alloy formation and confirm stability of the underlayer alloy. Activation energy of planar diffusion of palladium at the initial stage of the alloy formation as well as the activation energy of the overlayer-underlayer diffusion of the Pd atoms are in good agreement with those obtained by the scanning tunneling microscopy and low energy electron diffraction measurements, respectively.     

Effect of oxide aperture on the performance of 850 nm vertical-cavity surface-emitting lasers

An experimental study has been presented of the oxide-confined vertical-cavity surface-emitting lasers (VCSELs) operating in the 850 nm region of the electromagnetic spectrum. In this regard, various relevant VCSEL samples with numerous oxide aperture sizes have been fabricated and characterized. Thorough investigations of the electrical as well as optical characteristics of the fabricated samples have been performed, which include the overall device performance as a function of the oxidize aperture sizes. It is reported that the VCSELs with oxide aperture size <10 μm require low threshold currents (<1 mA). Further, the differential quantum efficiencies up to 28% corresponding to wall-plug efficiencies of up to 15% were measured for a number of these devices.     

Steric effect of methyl, methoxy, and ethyl substituents on the excimer formation of naphthalene on Al2O3(0 0 0 1)

Structural relaxation of molecules on surfaces can be monitored by observing the spectral evolution as increasing amount of thermal energy is made available. Naphthalene forms excimers in the excited state when amorphously prepared, but relaxes to a more ordered state when heated. Substituent groups on the naphthalene can substantially alter the available pathways during the thermally induced structural relaxation, and is reflected in the formation of excimer or trap fluorescence. A general correlation was determined for the naphthalene substitution with methyl, methoxy, and ethyl groups on the 1- and 2-positions with the pathway taken by the molecular adlayer.     

Ultrafast electron dynamics in amorphous and crystalline D2O layers on Ru(0 0 1)

Femtosecond dynamics of excess electrons photo-injected into amorphous and crystalline D₂O layers on Ru(0 0 1) have been investigated by time-resolved two-photon photoelectron spectroscopy. In the crystalline case, excited electrons are transferred into delocalized states considered as image potential states in the conduction band of ice and relax back to the metal on an ultrafast time scale. The life time of the n = 1 image potential state is <5 fs. In the amorphous case, spectral features arise from delocalized and localized electronic states. Relaxation of delocalized electrons back to the metal is as fast as in the crystalline case. The binding energy of localized electrons, however, is found to increase as a function of time delay by 1 eV/ps, which is attributed to the formation of solvated electrons. Such energetic stabilization starting at the bottom of the conduction band is clearly absent in crystalline layers. This pronounced correlation of electronic structure and electron dynamics with molecular structure is associated with the presence of localized states near the bottom of the conduction band in amorphous ice. Such localized states are absent for perfect periodic crystalline structures but prevail in amorphous systems where they serve as precursor sites for electron solvation.     

First-principles study of adsorption and diffusion on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces

Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces. The dimer vacancy lines on Ge/Si(0 0 1)-(2 × 8) and the alternate S_A and rebonded S_B steps on Ge/Si(1 0 5)-(1 × 2) are found to strongly influence the adatom kinetics. On Ge/Si(0 0 1)-(2 × 8) surface, the fast diffusion path is found to be along the dimer vacancy line (DVL), reversing the diffusion anisotropy on Si(0 0 1). Also, there exists a repulsion between the adatom and the DVL, which is expected to increase the adatom density and hence island nucleation rate in between the DVLs. On Ge/Si(1 0 5)-(1 × 2) surface, the overall diffusion barrier of Si(Ge) along direction is relative fast with a barrier of ∼0.83(0.61) eV, despite of the large surface undulation. This indicates that the adatoms can rapidly diffuse up and down the (1 0 5)-faceted Ge hut island. The diffusion is also almost isotropic along [0 1 0] and directions.     

Experimental determination and comparison of rain attenuation in free space optic link operating at 532 nm and 655 nm wavelength

The demand for high data rate, security and reliable communication is driving the development of free space optic communication (FSO) technology. The atmospheric effects such as scintillation, absorption and scattering severely affect the availability and range of the FSO system. The atmospheric rain absorbs and scatters the laser beam energy resulting in attenuation of the propagating signal. Initial development of FSO technology primarily used wavelength from infrared spectrum. In the recent years, the interest in visible light carrier for FSO applications is consistently increasing. In this paper, the effect of rain over two optical wavelengths from the visible spectrum i.e. 532 nm and 655 nm has been experimentally evaluated and results for the specific rain attenuation at 532 nm and 655 nm wavelengths have been compared.     

Theoretical study of the electronic structure of the Si3N4(0 0 0 1) surface

Density functional theory has been applied to a study of the electronic structure of the ideally-terminated, relaxed and H-saturated (0 0 0 1) surfaces of β-Si₃N₄ and to that of the bulk material. For the bulk, the lattice constants and atom positions and the valence band density of states are all in good agreement with experimental results. A band gap of 6.7 eV is found which is in fair accord with the experimental value of 5.1-5.3 eV for H-free Si₃N₄. Using a two-dimensionally-periodic slab model, a π-bonding interaction is found between threefold-coordinated Si and twofold-coordinated N atoms in the surface plane leading to π and π* surface-state bands in the gap. A surface-state band derived from s-orbitals is also found in the gap between the upper and lower parts of the valence band. Relaxation results in displacements of surface and first-underlayer atoms and to a stronger π-bonding interaction which increases the π-π* gap. The relaxed surface shows no occupied surface states above the valence band maximum, in agreement with recent photoemission data for a thin Si₃N₄ film. The π* band, however, remains well below the conduction band minimum (but well above the Fermi level). Adsorbing H at all dangling-bond sites on the ideally-terminated surface and then relaxing the surface and first underlayer leads to smaller, but still finite, displacements in comparison to the clean relaxed surface. This surface is more stable, by about 3.67 eV per H, than the clean relaxed surface.     

High resolution analysis of the rotational levels of the (0 0 0), (0 1 0), (1 0 0), (0 0 1), (0 2 0), (1 1 0) and (0 1 1) vibrational states of SO2

A high resolution (0.0018 cm⁻¹) Fourier transform instrument has been used to record the spectrum of an enriched ³⁴S (95.3%) sample of sulfur dioxide. A thorough analysis of the ν₂, 2ν₂ − ν₂, ν₁, ν₁ + ν₂ − ν₂, ν₃, ν₂ + ν₃ − ν₂, ν₁ + ν₂ and ν₂ + ν₃ bands has been carried out leading to a large set of assigned lines. From these lines ground state combination differences were obtained and fit together with the existing microwave, millimeter, and terahertz rotational lines. An improved set of ground state rotational constants were obtained. Next, the upper state rotational levels were fit. For the (0 1 0), (1 1 0) and (0 1 1) states, a simple Watson-type Hamiltonian sufficed. However, it was necessary to include explicitly interacting terms in the Hamiltonian matrix in order to fit the rotational levels of the (0 2 0), (1 0 0) and (1 0 1) states to within their experimental accuracy. More explicitly, it was necessary to use a ΔK = 2 term to model the Fermi interaction between the (0 2 0) and (1 0 0) levels and a ΔK = 3 term to model the Coriolis interaction between the (1 0 0) and (0 0 1) levels. Precise Hamiltonian constants were derived for the (0 0 0), (0 1 0), (1 0 0), (0 0 1), (0 2 0), (1 1 0) and (0 1 1) vibrational states.     

Density functional study of ethylamine and allylamine on Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 surfaces

We have investigated the interactions of ethylamine and allylamine with models of the Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 semiconductor surfaces. Ab initio molecular orbital calculations, along with density functional theory (DFT), are used to examine the interaction of these amines with cluster models of the semiconductor surfaces. The transition states and final adsorption products for adsorption of the molecules are predicted. The DFT calculations show the amines form N-dative bond states with Si(1 0 0)-2 × 1 or Ge(1 0 0)-2 × 1 as the initial adsorption product. The initial dative-bond products can be further activated, resulting in N-H bond cleavage on both surfaces. The overall reaction of a given amine on Si(1 0 0) via N-H dissociation is more exothermic than on the Ge(1 0 0) surface.     

Soft X-ray appearance potential spectroscopy (SXAPS) study of TiO2(1 1 0)-1 × 2 and (0 0 1)-1 × 1 surfaces

A soft X-ray appearance potential spectroscopy (SXAPS) apparatus with high sensitivity was built to measure non-derivative spectra. SXAPS spectra (non-derivative) of Ti 2p and O 1s for TiO₂(1 1 0)-1 × 2 and (0 0 1)-1 × 1 surfaces have been measured using low incident currents (about 10 μA/cm²) and a photon counting mode. Density of empty states on Ti and O sites are deduced by self-deconvoluting the spectra. The self-deconvoluted SXAPS spectra are qualitatively similar to those measured by X-ray absorption spectroscopy (XAS). The Ti 2p_3/2 spectrum shows two strong peaks which correspond to t_2g and e_g states. For the O 1s spectrum two strong peaks near the threshold are also found which can be ascribed to O 2pπ and O 2pσ states. These results suggest that the spectra almost obey the dipole selection rule, so-called the “approximate dipole selection rule”. The SXAPS spectra of Ti 2p and O 1s for the (1 1 0) and (0 0 1) surfaces resemble qualitatively, which is consistent with the XAS results. The spectra measured on the (1 1 0)-1 × 2 surface at an incident angle of 45° off normal to the surface and on the (1 1 0) surface sputtered by Ar ions indicate that SXAPS is very sensitive to the surface electronic states.     

Dissociative adsorption of NO on TiO2(1 1 0) argon ion bombarded surfaces

The interaction of NO with TiO₂(1 1 0) Ar⁺-ion-bombarded surfaces has been studied by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, Auger electron spectroscopy. Surfaces with different degrees of defects have been characterized by monitoring the evolution of the electronic structure of the surface, with the aim of studying the influence of the surface defects on the interaction with NO. The interaction was studied for exposures up to 500 L. However, the main effects occur already in the first 10 L. The exposure of the surfaces to NO resulted in the removal of defect sites without adsorption of N.     

Theoretical investigation of the Au/Si(1 1 1)-(5 × 2) surface structure

The atomic structure of the Au/Si(1 1 1)-(5 × 2) surface has been studied by density-functional theory calculations. Two structure models, proposed experimentally by Marks et al. and Hasegawa et al., have been examined on an equal ground. In our total-energy calculations, both models are found to be locally stable and energetically comparable. In our electronic-structure analyses, however, both models fail to reproduce the key features of angle-resolved photoemission spectra and scanning-tunneling-microscopy images, indicating that the considered models need to be modified. Suggestions for the modification are given based on the present calculations.     

Broadening mechanisms for the adsorbate-induced resonance in the Na/Cu(1 1 1) and Cs/Cu(1 1 1) systems

Adsorption of alkali atoms on the (1 1 1) and (1 0 0) noble metal surfaces has been shown recently to induce long-lived resonances located inside the surface projected band gap. However, the width of these resonances, as it appears in two-photon photo-emission experiments, is much larger than the inverse of their lifetime. We report on a theoretical study of some broadening mechanisms of these resonance lines in the Na/Cu(1 1 1) and Cs/Cu(1 1 1) systems at low coverage, including the homogeneous natural line broadening and the inhomogeneous statistical broadenings due to the distribution of adsorption heights associated to the quantal vibration of the alkali adsorbate and to the lateral disorder of alkali adsorption on the surface. The inhomogeneous mechanisms are shown to induce a very large broadening of the resonance line, in quantitative agreement with experimental results. The most important broadening effect appears to be the effect of the distribution of alkali adsorption heights.